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Renesas RJK0355DPA-01#J0B
- Part No.:
- RJK0355DPA-01#J0B
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
RJK0355DPA-01#J0B.pdf
- Description:
- MOSFET N-CH 30V 30A 8WPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
RJK0355DPA-01#J0B from Renesas Electronics is an N-channel power MOSFET optimized for high-speed switching in DC-DC converters and motor drivers, featuring 30 V VDSS, 30 A continuous drain current, and 10.7 mΩ max RDS(on) at VGS = 10 V - enabling efficient 12 V automotive and industrial power stages.
For engineers reviewing the RJK0355DPA-01#J0B datasheet, RJK0355DPA-01#J0B pinout, RJK0355DPA-01#J0B application, or RJK0355DPA-01#J0B equivalent, key selection criteria include gate drive compatibility down to 4.5 V, low Qg (6.3 nC), fast switching (td(on) = 6.9 ns), and WPAK(3F) package thermal performance (θch-c = 5 °C/W).
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance and high cell density in the WPAK(3F) thermally enhanced surface-mount package. Its gate threshold voltage range (1.2–2.5 V) ensures reliable turn-on with standard logic-level drivers.
Designed for unidirectional high-current switching, it integrates a robust body diode (VDF = 0.87 V typ at 30 A) with trr = 20 ns, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - supports 12 V nominal bus systems with margin against transients and ripple. |
| ID (continuous) | 30 A at Tc = 25 °C - enables compact high-current switch nodes in space-constrained PCB layouts. |
| RDS(on) max | 10.7 mΩ at VGS = 10 V - limits conduction loss to ≤ 9.6 mW/A², critical for thermal management in 10–30 A loads. |
| Qg | 6.3 nC - reduces gate driver power demand and allows use of low-power controllers like microcontroller GPIOs with buffer. |
| td(on)/tf | 6.9 ns / 5.6 ns - enables >1 MHz switching in resonant and hard-switched SMPS without excessive switching loss penalty. |
| θch-c | 5 °C/W - permits 25 W channel dissipation with ≤125 °C case temperature rise, supporting direct heatsink mounting. |
| VGS(th) | 1.2–2.5 V - ensures full enhancement with 3.3 V or 5 V logic-level gate drive, eliminating need for level shifters. |
Pinout & Package
Package: WPAK(3F) (RENESAS code PWSN0008DE-A), 8-pin exposed-drain thermally enhanced surface-mount package with 0.075 g mass and 4.90 mm × 3.92 mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel cells; electrically tied to exposed thermal pad (pin 8 side) for low-inductance return path. |
| 4 | Gate | Control terminal with low input capacitance (Ciss = 860 pF); requires <4.7 Ω series resistance to damp ringing during fast edge transitions. |
| 5, 6, 7, 8 | Drain | High-current drain terminals connected to large copper-exposed die pad; pins 5–8 are internally shorted and serve as primary thermal and current path to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V (RDS(on) ≤ 16.5 mΩ), compatible with 3.3 V/5 V microcontrollers and PWM controllers. |
| Low gate charge | Qg = 6.3 nC minimizes driver power loss and EMI generation during switching transitions in high-frequency converters. |
| Enhanced thermal resistance | θch-c = 5 °C/W enables 25 W continuous dissipation with minimal heatsinking - ideal for fanless industrial modules. |
| Fast body diode recovery | trr = 20 ns supports synchronous rectification in buck converters without cross-conduction risk or external diode replacement. |
| Pb-free & halogen-free | Complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS Directive 2011/65/EU for lead-free reflow assembly. |
Applications
| Automotive DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: 12 V to 5 V/3.3 V step-down conversion in engine control units and ADAS camera modules. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck regulator operating at 500 kHz–2 MHz. Use Value: Low RDS(on) and fast switching minimize power loss and thermal stress under transient load conditions (e.g., radar pulse bursts). |
Use Scenario: H-bridge leg switching in 24 V BLDC motor controllers for factory automation actuators. IC Role / Device Role / Timing Role: Low-side power switch with integrated body diode conducting freewheeling current during PWM off-time. Use Value: 20 ns trr and low VDF reduce shoot-through risk and conduction loss during commutation, improving efficiency by ≥1.2% at 15 A. |
| Server VRMs | Power Tool Battery Packs |
Use Scenario: Multiphase CPU/GPU voltage regulator output stage in enterprise servers requiring high current density. IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved buck phase with gate driven by dedicated controller IC. Use Value: 10.7 mΩ RDS(on) at 10 V gate drive enables <15 mΩ effective on-resistance per phase, reducing I²R loss in 60 A+ rail designs. |
Use Scenario: High-current protection and load switching in 18–40 V cordless power tool battery management systems. IC Role / Device Role / Timing Role: Main discharge FET controlling motor power delivery and overcurrent cutoff via external sense resistor. Use Value: 120 A peak drain current rating supports brief torque surges without thermal runaway, while 150 °C Tch rating ensures reliability under sustained load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 12 mΩ max at VGS = 5 V; TO-220AB package; higher θJA (62 °C/W vs. WPAK's 5 °C/W case-to-chip). | Requires heatsink and larger board area; less suitable for ultra-thin or high-density layouts. | Choose when legacy through-hole assembly or higher single-pulse avalanche energy (EAR = 12 mJ) is prioritized over thermal density. |
| SiR872DP-T1-GE3 | RDS(on) = 9.0 mΩ max at VGS = 10 V; PowerPAK SO-8; Qg = 12.5 nC (nearly 2× higher than RJK0355DPA-01#J0B). | Higher gate charge increases driver losses above 1 MHz; same 30 V rating but lower ID(pulse) (100 A vs. 120 A). | Prefer when lowest possible RDS(on) dominates design, and switching frequency remains ≤500 kHz to manage Qg-related losses. |
Compared with IRL3803PBF and SiR872DP-T1-GE3, RJK0355DPA-01#J0B delivers superior thermal performance per unit area, lower gate drive demand, and higher peak current capability - making it optimal for high-frequency, space-constrained, and thermally aggressive applications such as automotive ADAS power supplies and compact industrial inverters.
Availability
RJK0355DPA-01#J0B is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable Pb-free manufacturing.
Supply support for RJK0355DPA-01#J0B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
RJK0355DPA-01#J0B belongs to Renesas' WPAK-series logic-level power MOSFETs, engineered for high-efficiency, high-density switching in 12–40 V power systems where thermal performance and gate drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for RJK0355DPA-01#J0B?
The RJK0355DPA-01#J0B has a continuous drain current (ID) rating of 30 A at case temperature Tc = 25 °C. This rating assumes proper PCB copper area for heat dissipation and derates linearly to zero at Tc = 125 °C per the power vs. temperature derating curve on page 3 of the datasheet.
Can RJK0355DPA-01#J0B be driven directly by a 3.3 V microcontroller GPIO?
No - while RJK0355DPA-01#J0B is logic-level compatible, its VGS(th) min is 1.2 V and typical RDS(on) at 3.3 V is not characterized. Full enhancement and low RDS(on) require ≥4.5 V gate drive; a 3.3 V GPIO must drive a buffer or level shifter to reliably achieve VGS = 4.5–10 V for the RJK0355DPA-01#J0B.
What is the thermal resistance from channel to case (θch-c) for RJK0355DPA-01#J0B?
The channel-to-case thermal resistance (θch-c) for RJK0355DPA-01#J0B is 5.0 °C/W, measured under Tc = 25 °C conditions. This value reflects direct conduction from the silicon die to the exposed drain pad and is critical for calculating junction temperature when mounted on a heatsink or thermal copper plane.
Does RJK0355DPA-01#J0B have avalanche capability, and what is its rated energy?
Yes, RJK0355DPA-01#J0B is rated for repetitive avalanche operation with IAP = 9 A and EAR = 8.1 mJ at Tch = 25 °C, Rg ≥ 50 Ω. This capability supports inductive load switching and transient suppression without external clamping in properly designed circuits.
What is the gate-to-source voltage limit (VGSS) for RJK0355DPA-01#J0B?
The gate-to-source voltage rating (VGSS) for RJK0355DPA-01#J0B is ±20 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) to prevent overshoot during fast switching or inductive coupling events.
RJK0355DPA-01#J0B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 10.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 6.3 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 860 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WPAK
RJK0355DPA-01#J0B FAQ
1.How can I place an order for RJK0355DPA-01#J0B through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0355DPA-01#J0B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0355DPA-01#J0B reliable?
The price and inventory of RJK0355DPA-01#J0B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0355DPA-01#J0B is usually 5 days.
3.What payment methods are accepted for RJK0355DPA-01#J0B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0355DPA-01#J0B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0355DPA-01#J0B?
RJK0355DPA-01#J0B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0355DPA-01#J0B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0355DPA-01#J0B?
For technical support, including RJK0355DPA-01#J0B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0355DPA-01#J0B requirements.
6.How does Aetrix verify that RJK0355DPA-01#J0B is sourced from the original manufacturer or authorized distributors?
All RJK0355DPA-01#J0B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0355DPA-01#J0B meets industry standards.
7.What is the process for return or replacement of RJK0355DPA-01#J0B?
All RJK0355DPA-01#J0B units undergo pre-shipment inspection (PSI). If there is an issue with RJK0355DPA-01#J0B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0355DPA-01#J0B part is unused and in its original packaging.
Return procedure for RJK0355DPA-01#J0B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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