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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK0364DPA-WS#J0

Name: RJK0364DPA-WS#J0
Brand: Renesas
SKU: RJK0364DPA-WS#J0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK0364DPA-WS#J0

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: RJK0364DPA-WS#J0.pdf

Description:: POWER TRANSISTOR, MOSFET

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Product details

Overview

RJK0364DPA-WS#J0 from Renesas is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in automotive and industrial power supplies. It delivers 35 A continuous drain current, 30 V V_DSS, and 6.0 mΩ R_DS(on) at V_GS = 10 V, enabling low conduction loss in compact 3.9 mm × 4.9 mm WPAK packages.

For engineers reviewing the RJK0364DPA-WS#J0 datasheet, RJK0364DPA-WS#J0 pinout, RJK0364DPA-WS#J0 application, or RJK0364DPA-WS#J0 equivalent, this page provides verified electrical parameters, thermal derating curves, gate charge values (Q_g = 10 nC), body diode recovery time (t_rr = 20 ns), and WPAK package terminal mapping for PCB layout and thermal design validation.

Technical Context

This MOSFET uses planar trench-gate silicon technology optimized for 4.5 V logic-level gate drive compatibility and fast switching (t_d(on) = 5.8 ns, t_f = 4.5 ns). Its low R_DS(on) and 1600 pF C_iss support high-frequency synchronous buck converters operating up to 1 MHz.

The device integrates a robust body diode with V_DF = 0.88 V at 35 A and t_rr = 20 ns under dI_F/dt = 100 A/µs, making it suitable for freewheeling paths in hard-switched topologies where reverse recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V automotive and 24 V industrial bus applications
R_DS(on) @ V_GS = 10 V	6.0 mΩ typ. - Enables ≤ 2.1 W conduction loss at 35 A, reducing heatsink requirements
R_DS(on) @ V_GS = 4.5 V	8.0 mΩ typ. - Ensures full enhancement with standard 5 V microcontroller GPIOs
Q_g	10 nC - Low gate charge minimizes driver power loss and enables efficient 1 MHz operation
t_rr	20 ns - Fast body diode recovery reduces switching loss and EMI in non-synchronous designs
θ_ch-c	3.57 °C/W - Thermal resistance from channel to case supports ≥35 W dissipation with minimal thermal interface resistance
P_ch	35 W @ T_c = 25°C - Continuous power handling capability defined at case temperature, not ambient

Pinout & Package

Package: WPAK (RENESAS code PWSN0008DA-A), 8-pin surface-mount, exposed drain pad for thermal and electrical connection. Dimensions: 3.9 mm × 4.9 mm × 1.27 mm, mass 0.075 g.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source terminals tied internally; used for low-inductance return path and Kelvin sensing
4	Gate	Single gate input requiring <10 nC total charge; compatible with 4.5 V logic drivers
5, 6, 7, 8	Drain	Four parallel drain terminals connected to large exposed copper pad for thermal conduction and current sharing

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V (V_GS(off) = 1.2–2.5 V), eliminating need for gate boosters in 5 V systems
Low R_DS(on) × Q_g figure of merit	60 mΩ·nC - Balances conduction and switching losses for high-efficiency SMPS designs
High-density mounting	WPAK footprint occupies 19.1 mm² - 40% smaller than comparable SO-8 devices while delivering higher current
Pb-free construction	RoHS-compliant Ni/Pd/Au plating on all terminals, qualified per JEDEC J-STD-020 reflow profile
Avalanche-rated	Rated for repetitive unclamped inductive switching: I_AP = 15 A, E_AR = 22.5 mJ at T_ch = 25°C

Applications

Automotive Body Control Module (BCM)	Industrial PLC Output Stage
Use Scenario: Driving 12 V solenoids, relays, and LED arrays in vehicle door modules and lighting control units. IC Role / Device Role / Timing Role: High-side or low-side power switch with fast turn-off (t_f = 4.5 ns) to prevent contact arcing and meet ISO 7637-2 transient immunity. Use Value: 6.0 mΩ R_DS(on) limits self-heating to <1.5 W at 20 A, enabling convection-cooled PCB layout without heatsinks.	Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital output cards. IC Role / Device Role / Timing Role: Load switch with integrated body diode for inductive load flyback energy recirculation. Use Value: 20 ns t_rr and 0.88 V V_DF reduce snubber losses and eliminate external freewheeling diodes in 24 V DC outputs.
Server VRM High-Side Switch	USB-C PD Power Path
Use Scenario: High-side FET in multiphase buck converters supplying CPU core voltage (0.8–1.2 V @ >100 A). IC Role / Device Role / Timing Role: Synchronous rectifier with low Q_g (10 nC) to minimize gate driver losses at 500 kHz–1 MHz switching frequencies. Use Value: 1600 pF C_iss and 100 pF Crss enable stable Miller-effect-limited turn-on, supporting tight duty-cycle control.	Use Scenario: Input protection and power-path selection in USB-C power delivery sink designs with 20 V maximum input. IC Role / Device Role / Timing Role: Reverse-voltage and overcurrent protected high-side switch with fast fault response. Use Value: 30 V V_DSS and 35 A ID rating accommodate 100 W (20 V/5 A) PD3.0 operation with margin for surge events.

Automotive Body Control Module (BCM)

Industrial PLC Output Stage

Use Scenario: Driving 12 V solenoids, relays, and LED arrays in vehicle door modules and lighting control units.

IC Role / Device Role / Timing Role: High-side or low-side power switch with fast turn-off (t_f = 4.5 ns) to prevent contact arcing and meet ISO 7637-2 transient immunity.

Use Value: 6.0 mΩ R_DS(on) limits self-heating to <1.5 W at 20 A, enabling convection-cooled PCB layout without heatsinks.

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital output cards.

IC Role / Device Role / Timing Role: Load switch with integrated body diode for inductive load flyback energy recirculation.

Use Value: 20 ns t_rr and 0.88 V V_DF reduce snubber losses and eliminate external freewheeling diodes in 24 V DC outputs.

Server VRM High-Side Switch

USB-C PD Power Path

Use Scenario: High-side FET in multiphase buck converters supplying CPU core voltage (0.8–1.2 V @ >100 A).

IC Role / Device Role / Timing Role: Synchronous rectifier with low Q_g (10 nC) to minimize gate driver losses at 500 kHz–1 MHz switching frequencies.

Use Value: 1600 pF C_iss and 100 pF Crss enable stable Miller-effect-limited turn-on, supporting tight duty-cycle control.

Use Scenario: Input protection and power-path selection in USB-C power delivery sink designs with 20 V maximum input.

IC Role / Device Role / Timing Role: Reverse-voltage and overcurrent protected high-side switch with fast fault response.

Use Value: 30 V V_DSS and 35 A ID rating accommodate 100 W (20 V/5 A) PD3.0 operation with margin for surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 5.8 mΩ @ 10 V but only rated for 25 A ID; smaller 2×2 mm PQFN package	Limited to lower-current DC-DC stages; unsuitable for 35 A continuous loads	Select when board space is critical and peak current ≤25 A
DMTH3007LPSQ-13	Higher R_DS(on) = 7.2 mΩ @ 10 V but AEC-Q101 qualified and specified for automotive temperature range (−40°C to +175°C)	Required for under-hood automotive applications exceeding 150°C junction temperature	Select when full automotive qualification and extended T_j range are mandatory

Compared with IRLHS6242PBF and DMTH3007LPSQ-13, the RJK0364DPA-WS#J0 offers optimal balance of 35 A current handling, 6.0 mΩ conduction loss, and WPAK thermal performance for cost-sensitive industrial and non-under-hood automotive power stages.

Availability

RJK0364DPA-WS#J0 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output modules, server VRM high-side switching, and USB-C PD power-path management requiring stable component supply across production lifecycles.

Supply support for RJK0364DPA-WS#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The RJK0364DPA-WS#J0 belongs to Renesas' WPAK-series logic-level power MOSFETs, engineered for high-current, low-R_DS(on) switching in space-constrained power conversion and load management applications.

FAQ

What is the maximum continuous drain current rating for RJK0364DPA-WS#J0?

The RJK0364DPA-WS#J0 is rated for 35 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper PCB copper area for thermal conduction to the exposed drain pad. Derating applies above 25°C case temperature per the Power vs. Temperature Derating curve on page 3 of the datasheet, where P_ch drops linearly to zero at 150°C.

Does RJK0364DPA-WS#J0 support 4.5 V gate drive in practical circuits?

Yes, RJK0364DPA-WS#J0 is explicitly characterized for 4.5 V gate drive: its R_DS(on) is specified as 8.0 mΩ typ. at V_GS = 4.5 V and I_D = 17.5 A. The gate threshold voltage V_GS(off) range (1.2–2.5 V) ensures full enhancement well below 4.5 V, making it compatible with standard 5 V logic outputs without level shifting.

What is the thermal resistance from channel to case (θ_ch-c) for RJK0364DPA-WS#J0?

The RJK0364DPA-WS#J0 has a channel-to-case thermal resistance θ_ch-c of 3.57°C/W, measured under T_c = 25°C conditions. This value reflects heat flow from the silicon die through the package mold compound and solder joint to the exposed drain pad, and is critical for calculating junction temperature rise in thermally constrained layouts.

Can RJK0364DPA-WS#J0 be used in avalanche-mode switching applications?

Yes, RJK0364DPA-WS#J0 is rated for repetitive avalanche operation: I_AP = 15 A and E_AR = 22.5 mJ at T_ch = 25°C with R_g ≥ 50 Ω. The test circuit and waveform definitions are provided on page 5 of the datasheet, confirming suitability for unclamped inductive switching in relay drivers and motor control H-bridges.

What package type does RJK0364DPA-WS#J0 use, and what are its key mechanical dimensions?

RJK0364DPA-WS#J0 uses the WPAK package (RENESAS code PWSN0008DA-A), a leadless 8-terminal surface-mount package with an exposed drain pad. Key dimensions are 3.9 mm × 4.9 mm footprint, 1.27 mm height, and 0.075 g mass. The package drawing on page 6 specifies tolerances including ±0.2 mm length/width and 0.4 mm ±0.06 mm standoff height.

RJK0364DPA-WS#J0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

RJK0364DPA-WS#J0 FAQ

1.How can I place an order for RJK0364DPA-WS#J0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0364DPA-WS#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0364DPA-WS#J0 reliable?

The price and inventory of RJK0364DPA-WS#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0364DPA-WS#J0 is usually 5 days.

3.What payment methods are accepted for RJK0364DPA-WS#J0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0364DPA-WS#J0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0364DPA-WS#J0?

RJK0364DPA-WS#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0364DPA-WS#J0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0364DPA-WS#J0?

For technical support, including RJK0364DPA-WS#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0364DPA-WS#J0 requirements.

6.How does Aetrix verify that RJK0364DPA-WS#J0 is sourced from the original manufacturer or authorized distributors?

All RJK0364DPA-WS#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0364DPA-WS#J0 meets industry standards.

7.What is the process for return or replacement of RJK0364DPA-WS#J0?

All RJK0364DPA-WS#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0364DPA-WS#J0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0364DPA-WS#J0 part is unused and in its original packaging.

Return procedure for RJK0364DPA-WS#J0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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