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Renesas RJK0366DSP-00#J0

Part No.:
RJK0366DSP-00#J0
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixRJK0366DSP-00#J0.pdf
Description:
MOSFET N-CH 30V 11A 8SOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:22,500

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Product details

Overview

RJK0366DSP-00#J0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC power switching in compact, high-density applications. It delivers 9.0 mΩ typical RDS(on) at VGS = 10 V, supports 4.5 V gate drive, and handles 11 A continuous drain current with 30 V VDSS, making it suitable for synchronous buck converters in portable power supplies.

For engineers reviewing the RJK0366DSP-00#J0 datasheet, RJK0366DSP-00#J0 pinout, RJK0366DSP-00#J0 application, or RJK0366DSP-00#J0 equivalent, key selection criteria include low on-resistance at logic-level gate drive, SOP-8 thermal performance on FR4 boards, avalanche ruggedness (12.1 mJ), and body diode reverse recovery time (20 ns) in high-frequency switching topologies.

Technical Context

This MOSFET employs planar silicon process technology optimized for low gate charge (Qg = 6.8 nC) and fast switching (td(on) = 5.0 ns, tf = 4.2 ns), enabling efficient operation in 500 kHz–1 MHz DC-DC converters. Its gate threshold voltage range (1.2–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V controllers.

The device integrates a robust body diode with 0.82 V forward voltage at 11 A and 20 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck and half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin
RDS(on) @ VGS = 4.5 V 12.5 mΩ typ. - Enables efficient operation with 3.3 V/5 V gate drivers without level-shifting
ID (continuous) 11 A - Supports medium-power loads such as CPU core VRMs and motor driver half-bridges
Qg 6.8 nC - Reduces gate drive power loss and enables fast switching with low-Rg drivers
θch-a 62.5 °C/W - Thermal resistance on 40×40×1.6 mm FR4 board defines safe continuous power derating
EAR 12.1 mJ - Avalanche energy rating allows reliable operation under inductive load switching stress
trr 20 ns - Fast body diode recovery minimizes shoot-through risk and conduction loss in sync rectification

Pinout & Package

Package: SOP-8 (FP-8DAV), Renesas code PRSP0008DD-D, JEITA code P-SOP8-3.95×4.9-1.27, surface-mount, lead-free, 0.085 g mass.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source Common source connection for internal parallel FET cells; electrically tied to exposed thermal pad (pin 4 not used)
4 Gate Control terminal requiring ≤ ±20 V gate-source voltage; low input capacitance (Ciss = 1010 pF) eases driver design
5, 6, 7, 8 Drain High-current output node; pins 5–8 are internally paralleled for low-inductance, high-current drain routing

Key Features

Feature Design Value
Logic-level gate drive compatibility Guaranteed turn-on at VGS = 4.5 V with 12.5 mΩ RDS(on), eliminating need for gate boosters in 3.3 V systems
Low gate charge 6.8 nC total charge reduces driver power dissipation and enables >1 MHz switching without excessive losses
Thermally enhanced SOP-8 layout Drain-connected pins (5–8) and source-connected pins (1–3) provide dual current paths and improved heat spreading on PCB
Pb-free and RoHS-compliant construction Meets EU RoHS Directive requirements; Ni/Pd/Au plating ensures solderability and long-term interconnect reliability
Repetitive avalanche rated 12.1 mJ single-pulse avalanche energy supports robustness against inductive switching transients in motor and solenoid drives

Applications

DC-DC Synchronous Buck Converter USB-C Power Delivery (PD) Controller Interface

Use Scenario: High-efficiency 12 V to 3.3 V/5 V conversion in industrial IoT gateways with space-constrained PCBs.

IC Role / Device Role: Low-side synchronous rectifier MOSFET paired with an external high-side controller.

Use Value: 12.5 mΩ RDS(on) at 4.5 V gate drive reduces conduction loss by ~35% vs. legacy 20 mΩ logic-level FETs, improving full-load efficiency by 1.2%.

Use Scenario: Input power switch for USB-C PD sink circuits requiring 20 V tolerance and fast enable/disable control.

IC Role / Device Role: Hot-swap and inrush current limiting switch placed between USB-C receptacle and system rail.

Use Value: 30 V VDSS and 11 A ID support 100 W PD3.0 operation; fast 4.2 ns fall time enables precise soft-start sequencing.

Brushless DC (BLDC) Motor Driver Half-Bridge LED Driver Current Sink Stage

Use Scenario: Low-voltage (≤24 V) BLDC motor control in cordless power tools with integrated gate drivers.

IC Role / Device Role: Low-side switch in three-phase inverter leg, commutated at 20–50 kHz.

Use Value: 20 ns body diode trr prevents cross-conduction during PWM dead-time; 88 A peak pulse rating handles motor stall currents.

Use Scenario: Constant-current dimming stage for high-brightness LED arrays in architectural lighting modules.

IC Role / Device Role: PWM-controlled current sink regulating up to 11 A through series-connected LEDs.

Use Value: 9.0 mΩ RDS(on) at 10 V enables <100 mW conduction loss at 10 A, reducing heatsink requirements by 40% vs. TO-252 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF7470PBF RDS(on) = 11.5 mΩ @ 4.5 V; higher Qg (12.5 nC); SO-8 package with different pinout (G-D-S-S-D-D-D-S) Higher gate drive loss limits use in >500 kHz designs; requires PCB layout revision due to non-identical pin mapping Select when higher avalanche energy (22 mJ) is prioritized over switching speed and gate drive simplicity
Si2302DS-T1-E3 RDS(on) = 35 mΩ @ 4.5 V; lower ID (3.2 A); same SOP-8 footprint but no drain-source paralleling Insufficient current handling for >5 A loads; unsuitable for buck converter low-side where RJK0366DSP-00#J0 delivers 11 A Consider only for low-power signal switching or bias rails where cost is critical and current < 3 A

Compared with IRF7470PBF and Si2302DS-T1-E3, RJK0366DSP-00#J0 uniquely balances 4.5 V drive capability, 11 A current, 6.8 nC gate charge, and SOP-8 thermal performance-making it optimal for space-constrained, medium-power synchronous rectification where efficiency, layout simplicity, and reliability must coexist.

Availability

RJK0366DSP-00#J0 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and LED current regulation requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for RJK0366DSP-00#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

RJK0366DSP-00#J0 belongs to Renesas' silicon power MOSFET product line, engineered for high-density, high-efficiency power switching in consumer, computing, and industrial power supplies where logic-level drive and thermal robustness are essential.

FAQ

What is the maximum continuous drain current rating for RJK0366DSP-00#J0 at 25°C ambient?

The RJK0366DSP-00#J0 is rated for 11 A continuous drain current (ID) at Ta = 25°C when mounted on a standard FR4 board (40 × 40 × 1.6 mm). This rating assumes proper PCB copper area for heat dissipation and derates linearly above 25°C per the 62.5 °C/W channel-to-ambient thermal impedance specified in the datasheet. At 75°C ambient, the practical ID limit drops to approximately 7.5 A.

Does RJK0366DSP-00#J0 support 3.3 V gate drive in production designs?

Yes, RJK0366DSP-00#J0 is explicitly characterized for 4.5 V gate drive and exhibits 12.5 mΩ typical RDS(on) at VGS = 4.5 V and ID = 5.5 A. While its VGS(th) minimum is 1.2 V, stable low-resistance operation at 3.3 V is not guaranteed per datasheet specs. For 3.3 V systems, verify actual RDS(on) and timing under worst-case conditions; 4.5 V remains the validated minimum for full performance of RJK0366DSP-00#J0.

What is the thermal resistance (θch-a) of RJK0366DSP-00#J0 and how is it measured?

The RJK0366DSP-00#J0 has a channel-to-ambient thermal impedance (θch-a) of 62.5 °C/W, measured using a standardized glass epoxy board (FR4, 40 × 40 × 1.6 mm) with PW ≤ 10 s. This value reflects real-world PCB-level thermal performance-not junction-to-case-and directly determines safe power dissipation limits. For example, with 1 W dissipation, the channel temperature rise above ambient is 62.5°C, requiring careful thermal design to stay below the 150°C Tch maximum.

Can RJK0366DSP-00#J0 be used in avalanche mode, and what is its rated energy?

Yes, RJK0366DSP-00#J0 is rated for repetitive avalanche operation with 12.1 mJ single-pulse avalanche energy (EAR) at Tch = 25°C, Rg ≥ 50 Ω, and VDD = 15 V. This rating applies to inductive switching events like motor commutation or relay driving. Operation beyond this energy or at elevated temperatures requires derating per the derating curve on page 4 of the datasheet. The RJK0366DSP-00#J0's avalanche capability eliminates need for external clamping in many medium-energy applications.

Is the RJK0366DSP-00#J0 pinout compatible with standard SO-8 MOSFETs?

No, the RJK0366DSP-00#J0 uses a proprietary SOP-8 variant (FP-8DAV, Renesas code PRSP0008DD-D) with non-standard pin assignment: pins 1–3 = Source, pin 4 = Gate, pins 5–8 = Drain. This differs from industry-standard SO-8 MOSFETs (e.g., IRF74xx series), which typically assign Gate to pin 1 and alternate Drain/Source. PCB layout must follow the RJK0366DSP-00#J0-specific footprint; direct replacement without redesign is not possible.

RJK0366DSP-00#J0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
11.7mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
6.8 nC @ 4.5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1010 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP

RJK0366DSP-00#J0 FAQ

1.How can I place an order for RJK0366DSP-00#J0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0366DSP-00#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0366DSP-00#J0 reliable?

The price and inventory of RJK0366DSP-00#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0366DSP-00#J0 is usually 5 days.

3.What payment methods are accepted for RJK0366DSP-00#J0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0366DSP-00#J0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0366DSP-00#J0?

RJK0366DSP-00#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0366DSP-00#J0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0366DSP-00#J0?

For technical support, including RJK0366DSP-00#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0366DSP-00#J0 requirements.

6.How does Aetrix verify that RJK0366DSP-00#J0 is sourced from the original manufacturer or authorized distributors?

All RJK0366DSP-00#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0366DSP-00#J0 meets industry standards.

7.What is the process for return or replacement of RJK0366DSP-00#J0?

All RJK0366DSP-00#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0366DSP-00#J0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0366DSP-00#J0 part is unused and in its original packaging.

Return procedure for RJK0366DSP-00#J0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK0366DSP-00#J0 Tags

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