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Renesas RJK0368DPA-00#J0
- Part No.:
- RJK0368DPA-00#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
RJK0368DPA-00#J0.pdf
- Description:
- MOSFET N-CH 30V 20A 8WPAK
- Quantity:
- Payment:
- Shipping:
Inventory:61,026
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Product details
Overview
RJK0368DPA-00#J0 from Renesas is a silicon N-channel power MOSFET designed for high-efficiency DC-DC converters and synchronous rectification in 3.3 V/5 V/12 V power rails. It delivers RDS(on) = 11 mΩ at VGS = 10 V, supports 20 A continuous drain current, and operates with 4.5 V gate drive - enabling direct interface with low-voltage logic controllers in POL (point-of-load) applications.
For engineers reviewing the RJK0368DPA-00#J0 datasheet, RJK0368DPA-00#J0 pinout, RJK0368DPA-00#J0 application, or RJK0368DPA-00#J0 equivalent, key selection criteria include its WPAK package thermal performance (θch–c = 5 °C/W), body-diode reverse recovery time (trr = 20 ns), and gate charge profile (Qg = 6.2 nC) for optimizing switching loss in high-frequency buck converters.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and fast switching in synchronous buck topologies. Its gate threshold voltage range (VGS(off) = 1.2–2.5 V) ensures reliable turn-on with 4.5 V logic-level drivers while maintaining noise immunity against false triggering.
The device integrates a robust body diode with VDF = 0.88 V (at IF = 20 A) and trr = 20 ns under dIF/dt = 100 A/µs, supporting efficient freewheeling in high-current, high-dV/dt environments typical of server VRMs and telecom power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V input systems and transient clamping up to ±10%. |
| RDS(on) @ VGS = 10 V | 11 mΩ typ. - Enables <1.1 W conduction loss at 10 A, critical for thermally constrained POL designs. |
| RDS(on) @ VGS = 4.5 V | 16 mΩ typ. - Ensures full enhancement with standard 5 V microcontroller GPIO or PWM driver outputs. |
| Qg | 6.2 nC - Low total gate charge reduces drive power and enables >1 MHz switching without excessive gate driver sizing. |
| tr/tf | 3.5 ns / 4.1 ns - Fast edge rates minimize overlap loss in synchronous rectifiers operating above 500 kHz. |
| θch–c | 5 °C/W - Direct thermal path from channel to case allows 25 W dissipation at ΔT = 125 °C, supporting high-power density layouts. |
| trr | 20 ns - Short reverse recovery time suppresses shoot-through risk and EMI during hard commutation in buck converters. |
Pinout & Package
Package: WPAK (RENESAS code PWSN0008DA-A), surface-mount, thermally enhanced leadframe with exposed drain pad. Dimensions: 5.9 mm × 4.21 mm × 0.8 mm max, mass 0.075 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel dies; low-inductance return path for high di/dt currents. |
| 4 | Gate | Single gate input; 1.2 Ω intrinsic gate resistance limits ringing and simplifies RC snubber design. |
| 5, 6, 7, 8 | Drain | Multi-terminal drain with exposed thermal pad - electrically and thermally connects to PCB copper pour for heat extraction. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed turn-on at VGS = 4.5 V, eliminating need for level-shifters in 5 V control domains. |
| Low Qgd/Qg ratio | Qgd = 1.3 nC / Qg = 6.2 nC → 21% - Reduces Miller-induced switching delay and improves hard-switching robustness. |
| Thermally optimized WPAK package | θch–c = 5 °C/W enables 25 W operation with minimal heatsinking - ideal for compact DC-DC modules. |
| Fast body diode recovery | trr = 20 ns at dIF/dt = 100 A/µs - Minimizes reverse recovery loss and voltage overshoot in synchronous rectification. |
Applications
| Server VRM Synchronous Rectifier | Industrial PLC Power Stage |
|---|---|
Use Scenario: High-current (15–20 A), high-frequency (300–600 kHz) buck converter in 1U server voltage regulator modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diodes to reduce conduction loss and improve efficiency above 90%. Use Value: 11 mΩ RDS(on) cuts conduction loss by ~65% vs. 40 V Schottky, directly enabling higher power density and lower thermal footprint. | Use Scenario: 24 V input DC-DC stage powering I/O modules and fieldbus interfaces in programmable logic controllers. IC Role / Device Role / Timing Role: Primary switching element in isolated flyback or non-isolated buck converter delivering stable 3.3 V/5 V/12 V rails. Use Value: 4.5 V gate drive compatibility allows direct control from ARM Cortex-M MCU GPIOs, reducing BOM count and layout complexity. |
| Telecom Base Station PSU | Automotive ADAS Camera Power Supply |
Use Scenario: Intermediate bus converter (48 V → 12 V) in macrocell base station power distribution units. IC Role / Device Role / Timing Role: High-efficiency switch in multiphase buck topology handling 30+ A per phase with tight thermal constraints. Use Value: 5 °C/W θch–c and 20 A ID rating support sustained high-current operation without derating in confined chassis space. | Use Scenario: Compact 12 V → 3.3 V point-of-load supply for image sensor and ISP in automotive surround-view camera modules. IC Role / Device Role / Timing Role: Synchronous rectifier in 2 MHz buck converter where low Qg (6.2 nC) minimizes gate drive loss and EMI. Use Value: 3.5 ns rise time and 20 ns trr ensure clean switching transitions, meeting CISPR-25 Class 5 conducted emission limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6242PBF | RDS(on) = 9.5 mΩ @ 4.5 V, but VDSS = 25 V; smaller 2×2 mm PQFN package. | Limited to ≤20 V input systems; unsuitable for 24 V transient-tolerant designs requiring 30 V VDSS. | Select when board space is critical and input voltage stays below 20 V; verify avalanche capability not required. |
| SiR872DP-T1-GE3 | RDS(on) = 10.5 mΩ @ 10 V, but Qg = 12.5 nC - 2× higher than RJK0368DPA-00#J0. | Higher gate charge increases driver losses and limits practical switching frequency to ≤300 kHz. | Prefer for cost-sensitive, lower-frequency (<300 kHz) applications where thermal margin exceeds requirement. |
Compared with IRLHS6242PBF and SiR872DP-T1-GE3, RJK0368DPA-00#J0 uniquely balances 30 V VDSS, 4.5 V logic-level drive, and ultra-low Qg (6.2 nC), making it optimal for high-frequency, high-reliability 24 V-input POL converters where gate drive efficiency and transient robustness are prioritized.
Availability
RJK0368DPA-00#J0 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power stages, and telecom base station PSUs requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.
Supply support for RJK0368DPA-00#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK0368DPA-00#J0 belongs to Renesas' WPAK-series logic-level power MOSFETs, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for RJK0368DPA-00#J0?
The RJK0368DPA-00#J0 is rated for 20 A continuous drain current (ID) at Tc = 25°C. Derating applies above case temperature: at 100°C case temperature, the usable ID drops to approximately 12 A due to thermal limitations defined in the Safe Operating Area curve on page 3 of the datasheet.
Does RJK0368DPA-00#J0 support gate drive from a 3.3 V microcontroller?
No - RJK0368DPA-00#J0 requires minimum 4.5 V gate drive for guaranteed full enhancement. At VGS = 3.3 V, RDS(on) rises significantly beyond specification (no typ/max provided), risking excessive conduction loss and thermal runaway. A level-shifter or dedicated 5 V gate driver is required for 3.3 V logic control.
What is the thermal resistance from channel to case (θch–c) for RJK0368DPA-00#J0?
The RJK0368DPA-00#J0 has a channel-to-case thermal resistance (θch–c) of 5.0 °C/W, measured under Tc = 25°C conditions. This value assumes proper soldering to a 1-in² 2-oz copper pad with thermal vias - actual board-level θJA depends on PCB layout and airflow.
Is RJK0368DPA-00#J0 suitable for avalanche operation?
Yes - RJK0368DPA-00#J0 is rated for repetitive avalanche energy (EAR) of 8.1 mJ at Tch = 25°C with Rg ≥ 50 Ω. Its single-pulse avalanche current (IAP) is 9 A. These ratings are validated per the test circuit on page 5 and must be applied within specified pulse width and duty cycle limits.
What is the body diode forward voltage (VDF) of RJK0368DPA-00#J0 at 20 A?
The body diode forward voltage (VDF) of RJK0368DPA-00#J0 is 0.88 V typical at IF = 20 A and VGS = 0 V, as specified in the Electrical Characteristics table on page 2. The maximum is 1.15 V under the same conditions, confirming low conduction loss during freewheeling phases.
RJK0368DPA-00#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 14.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.2 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 730 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WPAK
RJK0368DPA-00#J0 FAQ
1.How can I place an order for RJK0368DPA-00#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0368DPA-00#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0368DPA-00#J0 reliable?
The price and inventory of RJK0368DPA-00#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0368DPA-00#J0 is usually 5 days.
3.What payment methods are accepted for RJK0368DPA-00#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0368DPA-00#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0368DPA-00#J0?
RJK0368DPA-00#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0368DPA-00#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0368DPA-00#J0?
For technical support, including RJK0368DPA-00#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0368DPA-00#J0 requirements.
6.How does Aetrix verify that RJK0368DPA-00#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0368DPA-00#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0368DPA-00#J0 meets industry standards.
7.What is the process for return or replacement of RJK0368DPA-00#J0?
All RJK0368DPA-00#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0368DPA-00#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0368DPA-00#J0 part is unused and in its original packaging.
Return procedure for RJK0368DPA-00#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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