Renesas RJK0379DPA-00#J53
- Part No.:
- RJK0379DPA-00#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0379DPA-00#J53.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:9,000
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Product details
Overview
RJK0379DPA-00#J53 from Renesas Electronics is a 30V, 50A N-channel power MOSFET with integrated Schottky body diode, low 2.3 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drivers, and qualified for industrial-grade applications.
For engineers reviewing the RJK0379DPA-00#J53 datasheet, RJK0379DPA-00#J53 pinout, RJK0379DPA-00#J53 application, or RJK0379DPA-00#J53 equivalent, key selection factors include its 4.5 V gate drive capability, 37 nC total gate charge, built-in SBD for reduced reverse recovery loss, and WPAK(3F) package thermal resistance of 2.28 °C/W.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching transients, supporting pulse operation up to 200 A with 10 μs width and 1% duty cycle. Its integrated Schottky body diode enables unidirectional current handling with 0.39 V forward voltage at 2 A and 35 ns reverse recovery time.
The device operates with gate threshold voltage between 1.2 V and 2.5 V, exhibits 5150 pF input capacitance and 500 pF reverse transfer capacitance at VDS = 10 V, and delivers 110 S forward transfer admittance - enabling efficient gate drive with minimal current demand.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - maximum blocking voltage before avalanche onset; suitable for 24 V bus systems with margin. |
| RDS(on) max | 2.3 mΩ at VGS = 10 V, ID = 25 A - enables <1.5 W conduction loss at 50 A continuous drain current. |
| Qg | 37 nC - determines gate driver power requirement and switching speed; compatible with standard logic-level drivers. |
| td(off) | 72 ns - short turn-off delay supports >1 MHz switching in synchronous buck topologies. |
| θch–c | 2.28 °C/W - thermal resistance from channel to case; requires heatsink interface for sustained 55 W dissipation. |
| VSD | 0.39 V at IF = 2 A - forward voltage of integrated Schottky body diode reduces freewheeling loss vs. conventional MOSFET body diode. |
| EAR | 96 mJ - single-pulse avalanche energy rating at Tch = 25 °C; supports robustness against inductive switching stress. |
Pinout & Package
Package: WPAK(3F), Renesas code PWSN0008DE-A - surface-mount, thermally enhanced leadframe package with exposed drain pad (pins 5–8), dual-source configuration (pins 1–3), and single gate terminal (pin 4).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel die; low-inductance return path for high di/dt current loops. |
| 4 | Gate | Control input; accepts 4.5 V logic-level drive; gate resistance 1.2 Ω limits ringing and EMI. |
| 5, 6, 7, 8 | Drain | High-current output node tied to exposed thermal pad; electrically and thermally coupled to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in Schottky body diode | Eliminates external freewheeling diode in buck converters; reduces trr to 35 ns and VF to 0.39 V at 2 A. |
| 4.5 V gate drive compatibility | Enables direct interfacing with 5 V or 3.3 V microcontrollers without level-shifting circuitry. |
| Low RDS(on) × Qg figure-of-merit | 8.5 mΩ·nC - balances conduction and switching losses for high-efficiency 300 kHz–1 MHz power stages. |
| Pb-free and halogen-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity. |
Applications
| DC-DC Buck Converter | BLDC Motor Phase Switch |
|---|---|
Use Scenario: High-efficiency 24 V input to 5 V/12 V output step-down converter in industrial PLC power supplies. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with forced PWM mode. Use Value: 2.3 mΩ RDS(on) minimizes I²R loss at 50 A peak current; integrated SBD eliminates dead-time shoot-through risk. | Use Scenario: Low-voltage (<30 V) three-phase BLDC motor driver in cordless power tools. IC Role / Device Role / Timing Role: Low-side phase switch controlling commutation timing with <72 ns turn-off delay. Use Value: 35 ns body diode trr ensures clean freewheeling during PWM off-time; 4.5 V gate drive simplifies gate driver IC selection. |
| Hot-Swap Controller | Load Switch for Server VRM |
Use Scenario: Inrush current limiting and fault protection in 12 V/48 V backplane hot-swap modules. IC Role / Device Role / Timing Role: Main pass element with controlled turn-on via gate slew rate management. Use Value: 200 A pulse rating handles surge currents; 96 mJ avalanche energy withstands load-dump transients. | Use Scenario: Output stage switch in server voltage regulator module delivering up to 50 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Final-stage power switch with tight thermal coupling to heatsink via exposed drain pad. Use Value: 2.28 °C/W θch–c enables stable operation at 55 W dissipation; WPAK(3F) footprint supports high-density layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ @ 10 V; no integrated Schottky diode; TO-220AB package. | Lacks body diode optimization; higher trr (60 ns) increases switching loss in freewheeling paths. | Choose when cost-sensitive designs accept higher conduction loss and require through-hole mounting. |
| SiR872DP-T1-GE3 | RDS(on) = 2.1 mΩ @ 10 V; 30 V rating; PowerPAK SO-8 package; no integrated SBD. | Higher Ciss (5700 pF) and Qg (44 nC); lacks Schottky body diode; smaller thermal pad area. | Prefer when board space is constrained and external diode integration is acceptable. |
Compared with IRL3803PBF and SiR872DP-T1-GE3, the RJK0379DPA-00#J53 uniquely combines low RDS(on), 4.5 V gate drive, and integrated Schottky body diode in a thermally superior WPAK(3F) package - making it optimal for high-frequency, high-current DC-DC and motor control where body diode performance is critical.
Availability
RJK0379DPA-00#J53 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and 24 V DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for RJK0379DPA-00#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.
The RJK0379DPA-00#J53 belongs to Renesas' WPAK-series power MOSFET product line, engineered for high-current, high-efficiency switching in compact industrial power supplies and motor control systems.
FAQ
What is the maximum continuous drain current rating for RJK0379DPA-00#J53?
The RJK0379DPA-00#J53 has a maximum continuous drain current (ID) rating of 50 A at Tc = 25 °C. This rating assumes proper heatsinking to maintain case temperature within limits; derating applies above 25 °C per the power vs. temperature curve on page 3 of the datasheet. At Tc = 75 °C, the usable ID drops to approximately 35 A.
Does RJK0379DPA-00#J53 have a built-in Schottky body diode, and how does it affect performance?
Yes, the RJK0379DPA-00#J53 integrates a Schottky body diode, confirmed in the "Features" section and electrical characteristics table (VDF = 0.39 V, trr = 35 ns). This reduces reverse recovery charge and switching loss compared to standard MOSFET body diodes, enabling cleaner freewheeling in synchronous rectifiers and reducing EMI in high-frequency converters.
Can RJK0379DPA-00#J53 be driven directly by a 3.3 V microcontroller GPIO?
No - while the RJK0379DPA-00#J53 is specified for 4.5 V gate drive, its gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, meaning it will turn on partially at 3.3 V but not achieve full enhancement. At VGS = 4.5 V, RDS(on) is 3.4 mΩ max; at 3.3 V, conduction loss increases significantly. A dedicated gate driver or level shifter is recommended for reliable 3.3 V control.
What is the thermal resistance from channel to case (θch–c) for RJK0379DPA-00#J53, and how should it be used in thermal design?
The RJK0379DPA-00#J53 has a channel-to-case thermal resistance (θch–c) of 2.28 °C/W, measured under specified test conditions. To calculate junction temperature, use Tj = Tc + (Pdiss × θch–c). For example, at 55 W dissipation and Tc = 80 °C, Tj = 92.5 °C - well below the 150 °C absolute maximum. PCB copper area and thermal vias under the drain pad are essential to realize this spec.
Is RJK0379DPA-00#J53 suitable for avalanche-rated applications?
Yes - the RJK0379DPA-00#J53 is characterized for repetitive avalanche with IAP = 31 A and EAR = 96 mJ at Tch = 25 °C (Notes 2 and 4). It is designed to withstand inductive switching stresses in non-clamped topologies, provided gate resistance ≥50 Ω and pulse conditions match datasheet test setup. Derating is required at elevated channel temperatures.
RJK0379DPA-00#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0379DPA-00#J53 FAQ
1.How can I place an order for RJK0379DPA-00#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0379DPA-00#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of RJK0379DPA-00#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0379DPA-00#J53 is usually 5 days.
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For technical support, including RJK0379DPA-00#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0379DPA-00#J53 requirements.
6.How does Aetrix verify that RJK0379DPA-00#J53 is sourced from the original manufacturer or authorized distributors?
All RJK0379DPA-00#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0379DPA-00#J53 meets industry standards.
7.What is the process for return or replacement of RJK0379DPA-00#J53?
All RJK0379DPA-00#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0379DPA-00#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0379DPA-00#J53 part is unused and in its original packaging.
Return procedure for RJK0379DPA-00#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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