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Renesas RJK0379DPA-00#J5A
- Part No.:
- RJK0379DPA-00#J5A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-WFDFN Exposed Pad
- Datasheet:
-
RJK0379DPA-00#J5A.pdf
- Description:
- MOSFET N-CH 30V 50A 8WPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
RJK0379DPA-00#J5A from Renesas Electronics is a 30V, 50A N-channel power MOSFET with integrated Schottky body diode, 2.3 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drivers, and housed in WPAK(3F) package with exposed drain thermal pad.
For engineers reviewing the RJK0379DPA-00#J5A datasheet, RJK0379DPA-00#J5A pinout, RJK0379DPA-00#J5A application, or RJK0379DPA-00#J5A equivalent, this device is selected for low-loss synchronous rectification, 4.5 V logic-level gate drive compatibility, and high-current density mounting in space-constrained industrial power supplies.
Technical Context
This MOSFET uses a trench-gate silicon process optimized for low RDS(on) and fast switching, featuring built-in Schottky body diode to reduce reverse recovery loss and improve efficiency in hard-switched topologies. Its 2.28 °C/W channel-to-case thermal resistance supports high continuous current operation when mounted on thermally enhanced PCBs.
The device is characterized for avalanche energy (96 mJ) and peak pulse current (200 A), enabling robustness in inductive load switching. Gate charge parameters (Qg = 37 nC, Qgd = 10.7 nC) indicate moderate drive strength requirements suitable for standard gate drivers operating at up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for use in 24 V nominal bus systems with transient margin. |
| RDS(on) max | 2.3 mΩ at VGS = 10 V - Enables ≤1.4 W conduction loss at 50 A DC, critical for thermal management in compact converters. |
| ID | 50 A - Continuous drain current rating at Tc = 25 °C, defining usable current capacity under heatsink-cooled conditions. |
| Qg | 37 nC - Total gate charge determines required driver current and switching loss trade-off at 100–500 kHz frequencies. |
| tr/tf | 17.5 ns / 14 ns - Fast edge rates support high-frequency PWM without excessive EMI or shoot-through risk in half-bridge configurations. |
| VGS(th) | 1.2–2.5 V - Low threshold enables reliable turn-on with 3.3 V or 5 V logic-level controllers without level-shifting. |
| Ciss | 5150 pF - Input capacitance impacts gate drive loop stability and Miller effect during high-dv/dt transitions. |
Pinout & Package
Package: WPAK(3F) (RENESAS code PWSN0008DE-A), surface-mount, thermally enhanced with exposed drain pad (pins 5–8), 8-pin leadframe design measuring 5.9 × 4.23 mm with 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal MOSFET cells; electrically tied to source bond wires and thermal pad underside. |
| 4 | Gate | Control terminal requiring <±20 V absolute rating; low 1.2 Ω gate resistance minimizes RC delay with standard drivers. |
| 5, 6, 7, 8 | Drain | High-current output node connected to large copper-exposed thermal pad; pins share parallel current path to reduce inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in Schottky body diode | Reduces reverse recovery time (trr = 35 ns) and eliminates external freewheeling diode in buck/synchronous rectifier designs. |
| 4.5 V gate drive capability | Ensures full enhancement at logic-level voltages, eliminating need for dedicated gate boosters in microcontroller-driven applications. |
| Low RDS(on) × Qg figure of merit | ~85 mΩ·nC - balances conduction and switching losses for optimal efficiency in 100–300 kHz DC-DC stages. |
| Pb-free and halogen-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly. |
| High avalanche ruggedness | Rated for 96 mJ single-pulse avalanche energy - supports reliable operation during inductive load turn-off transients. |
Applications
| Server VRM Power Stage | Industrial Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 12 V input → 0.8–1.8 V output voltage regulation for CPU/GPU cores in data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter, operating at 300–600 kHz with interleaved PWM. Use Value: 2.3 mΩ RDS(on) reduces conduction loss by >30% vs. comparable 3.5 mΩ devices, directly improving VRM efficiency and thermal headroom. | Use Scenario: Low-voltage (<30 V) BLDC motor control in factory automation actuators and robotic joints. IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg, driven by isolated gate driver with 4.5 V logic interface. Use Value: Integrated Schottky diode eliminates external freewheeling path, reducing BOM count and PCB area while maintaining trr < 40 ns for clean commutation. |
| Automotive Body Control Module | Telecom DC-DC Intermediate Bus Converter |
Use Scenario: Load switching for 12 V automotive subsystems including lighting, HVAC fans, and solenoid drivers. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled via CAN/LIN-connected MCU GPIO with 3.3 V/5 V output. Use Value: 50 A continuous rating and 200 A pulse capability handle inrush currents of incandescent lamps and brushed motors without derating. | Use Scenario: 48 V to 12 V intermediate bus conversion in 5G base station power shelves and optical line terminals. IC Role / Device Role / Timing Role: Primary-side synchronous FET in phase-shifted full-bridge topology operating at 200 kHz with ZVS. Use Value: Low Coss (1080 pF) and Crss/Ciss ratio support efficient zero-voltage switching, reducing switching loss by ~22% vs. higher-Coss alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ @ 10 V; higher Qg (54 nC); TO-220AB package; no integrated diode. | Larger footprint, requires external diode, less suitable for ultra-compact layouts. | Select when legacy through-hole mounting or higher avalanche margin (IAR = 40 A) is prioritized over board area. |
| SiR872DP-T1-GE3 | RDS(on) = 2.2 mΩ @ 10 V; similar Qg (35 nC); PowerPAK SO-8L package; no integrated diode. | Same RDS(on), but lacks Schottky body diode - needs external diode for freewheeling paths. | Prefer when cost sensitivity outweighs diode integration benefit and PCB layout allows discrete diode placement. |
Compared with IRL3803PBF and SiR872DP-T1-GE3, the RJK0379DPA-00#J5A delivers superior power density and reduced component count via its integrated Schottky diode and WPAK(3F) thermal package - making it optimal for space- and efficiency-critical 30 V synchronous rectifiers where diode recovery performance is critical.
Availability
RJK0379DPA-00#J5A is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, automotive body control modules, and telecom intermediate bus converters requiring stable component supply and long-term production continuity.
Supply support for RJK0379DPA-00#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0379DPA-00#J5A belongs to Renesas' Power MOSFET product line designed specifically for high-current, high-efficiency switching in 12–30 V power conversion systems with emphasis on thermal performance and logic-level drivability.
FAQ
What is the maximum continuous drain current rating for RJK0379DPA-00#J5A?
The RJK0379DPA-00#J5A is rated for 50 A continuous drain current (ID) at case temperature Tc = 25 °C. Derating applies above this temperature per the power vs. temperature curve - at Tc = 100 °C, the usable ID drops to approximately 28 A. This rating assumes proper PCB copper area and thermal vias under the exposed drain pad.
Does RJK0379DPA-00#J5A include an integrated body diode, and what type is it?
Yes, the RJK0379DPA-00#J5A integrates a Schottky barrier diode (SBD) between source and drain. This is confirmed in the datasheet's "Features" section and electrical characteristics table (VDF = 0.39 V at IF = 2 A). Unlike conventional MOSFET body diodes, this SBD provides fast reverse recovery (trr = 35 ns) and lower forward voltage, eliminating need for external freewheeling diodes in many topologies.
Can RJK0379DPA-00#J5A be driven directly by a 3.3 V microcontroller GPIO?
No - while the RJK0379DPA-00#J5A supports 4.5 V gate drive, its RDS(on) rises significantly below that voltage (2.4–3.4 mΩ at VGS = 4.5 V vs. 1.8–2.3 mΩ at 10 V). A 3.3 V GPIO cannot fully enhance the device, resulting in excessive conduction loss. A gate driver or level shifter is required to deliver ≥4.5 V to the gate of RJK0379DPA-00#J5A for reliable operation.
What is the thermal resistance from channel to case (θch–c) for RJK0379DPA-00#J5A?
The channel-to-case thermal resistance (θch–c) of RJK0379DPA-00#J5A is 2.28 °C/W, measured under standard test conditions (Tc = 25 °C). This value reflects heat transfer from the silicon die to the exposed drain pad and is critical for calculating junction temperature rise in thermally constrained layouts. It assumes minimum recommended solder coverage and thermal via count per Renesas' layout guidelines.
Is RJK0379DPA-00#J5A suitable for avalanche-rated applications?
Yes - the RJK0379DPA-00#J5A is explicitly rated for repetitive avalanche operation: 31 A avalanche current (IAP) and 96 mJ single-pulse avalanche energy (EAR) at Tch = 25 °C. These values are validated per the test circuit shown on page 5 of the datasheet. Designers must ensure gate resistor ≥50 Ω and limit duty cycle to <0.1% for repetitive use, as specified in the Absolute Maximum Ratings notes.
RJK0379DPA-00#J5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-WFDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 5150 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 55W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WPAK
RJK0379DPA-00#J5A FAQ
1.How can I place an order for RJK0379DPA-00#J5A through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0379DPA-00#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0379DPA-00#J5A reliable?
The price and inventory of RJK0379DPA-00#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0379DPA-00#J5A is usually 5 days.
3.What payment methods are accepted for RJK0379DPA-00#J5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0379DPA-00#J5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0379DPA-00#J5A?
RJK0379DPA-00#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0379DPA-00#J5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0379DPA-00#J5A?
For technical support, including RJK0379DPA-00#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0379DPA-00#J5A requirements.
6.How does Aetrix verify that RJK0379DPA-00#J5A is sourced from the original manufacturer or authorized distributors?
All RJK0379DPA-00#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0379DPA-00#J5A meets industry standards.
7.What is the process for return or replacement of RJK0379DPA-00#J5A?
All RJK0379DPA-00#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK0379DPA-00#J5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0379DPA-00#J5A part is unused and in its original packaging.
Return procedure for RJK0379DPA-00#J5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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