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Renesas RJK0379DPA-WS#J53
- Part No.:
- RJK0379DPA-WS#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0379DPA-WS#J53.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,700
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Product details
Overview
RJK0379DPA-WS#J53 from Renesas Electronics is a 30V, 50A N-channel power MOSFET with integrated Schottky body diode, low 2.3 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drivers, and qualified for industrial-grade applications.
For engineers reviewing the RJK0379DPA-WS#J53 datasheet, RJK0379DPA-WS#J53 pinout, RJK0379DPA-WS#J53 application, or RJK0379DPA-WS#J53 equivalent, key selection criteria include its 4.5 V gate drive capability, 37 nC total gate charge, built-in SBD for reduced reverse recovery loss, and WPAK(3F) package thermal resistance of 2.28 °C/W.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses. Its integrated Schottky body diode enables fast, soft reverse recovery (trr = 35 ns) without external diode placement, reducing layout complexity in synchronous rectification stages.
The device supports logic-level gate drive down to 4.5 V, delivering 2.4 mΩ typical RDS(on) under that condition, and features low input capacitance (Ciss = 5150 pF) and gate resistance (Rg = 1.2 Ω), enabling clean 16 ns turn-on delay and 14 ns fall time with minimal gate driver stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V nominal bus systems and transient clamping up to 30 V. |
| ID | 50 A - Continuous drain current rating at Tc = 25 °C, supporting high-current power stages without parallel devices. |
| RDS(on) max | 2.3 mΩ @ VGS = 10 V - Enables <120 mW conduction loss at 50 A, critical for thermally constrained PCBs. |
| Qg | 37 nC - Low total gate charge reduces driver power demand and improves efficiency in high-frequency (>500 kHz) SMPS designs. |
| trr | 35 ns - Fast body diode recovery minimizes shoot-through risk and EMI in hard-switched half-bridges. |
| θch–c | 2.28 °C/W - High thermal conductivity from channel to case enables direct heatsink mounting without thermal vias in compact layouts. |
| VGS(th) | 1.2–2.5 V - Tight threshold range ensures predictable turn-on behavior across temperature and unit-to-unit variation. |
Pinout & Package
Package: WPAK(3F), also designated PWSN0008DE-A - 8-pin exposed-drain surface-mount package with 3× parallel source terminals, 4× parallel drain terminals, and single gate terminal; optimized for high-current density and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Three independent source connections reduce bond-wire inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate | Single gate input with 1.2 Ω internal resistance; compatible with standard gate drivers without external series resistor for most 5–12 V drive rails. |
| 5, 6, 7, 8 | Drain | Four parallel drain pads provide low-inductance, high-current return path to ground plane or heatsink, minimizing voltage overshoot during turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in Schottky body diode | Eliminates need for external anti-parallel diode in buck, flyback, and half-bridge topologies, saving board space and BOM cost. |
| 4.5 V gate drive compatibility | Enables direct interface with 5 V microcontrollers and logic-level PWM controllers without level-shifting circuitry. |
| Low RDS(on) × Qg figure-of-merit | ~85 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 300–1000 kHz DC-DC converters. |
| Pb-free and halogen-free construction | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life. |
| High avalanche energy rating | 96 mJ (IAP = 31 A) - Withstands repetitive inductive switching transients without derating in motor control H-bridges. |
Applications
| DC-DC Buck Converter | BLDC Motor Inverter Stage |
|---|---|
Use Scenario: Primary high-side switch in 12–24 V input, 3–12 V output synchronous buck regulator for FPGA core supplies. IC Role / Device Role / Timing Role: Main power switch handling continuous 40 A load current with 500 kHz PWM frequency and 10 ns dead-time control. Use Value: 2.3 mΩ RDS(on) limits conduction loss to <40 W, while 35 ns trr prevents cross-conduction during synchronous rectification. | Use Scenario: Low-side switch in three-phase BLDC inverter driving 200 W fan or pump motor. IC Role / Device Role / Timing Role: Phase-leg switching element operating at 20 kHz PWM with bidirectional current flow enabled by integrated SBD. Use Value: Built-in Schottky diode eliminates external freewheeling diodes, reducing component count by 3 per phase and improving thermal symmetry. |
| Automotive Body Control Module | Industrial LED Driver |
Use Scenario: Load switch for 12 V automotive lighting or solenoid actuation in BCM subassembly. IC Role / Device Role / Timing Role: High-current, low-dropout power switch controlled via CAN/LIN interface MCU GPIO with 4.5 V drive margin. Use Value: Guaranteed turn-on at 4.5 V VGS ensures reliable operation across battery voltage range (9–16 V), and 200 A peak rating handles inrush currents. | Use Scenario: Constant-current switch in 36 V string LED driver for commercial signage or street lighting. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating up to 5 A through 10-series LED strings with 30 V headroom. Use Value: 30 V VDSS provides sufficient margin over 36 V string voltage plus ripple, and low Coss (1080 pF) minimizes switching loss at 100 kHz dimming frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) (3.1 mΩ @ 10 V), no integrated diode, TO-252 package with higher θJA. | Requires external freewheeling diode; less suitable for space-constrained synchronous rectifiers. | Select when cost is primary concern and thermal budget allows higher on-resistance. |
| STL220N3LLH6 | Same 30 V rating but 220 A rated; larger H2PAK-6 package; higher Qg (72 nC); no integrated diode. | Better for ultra-high-current inverters but incompatible pinout and layout; lacks SBD benefit. | Select only if >100 A peak current is required and board area permits larger footprint. |
Compared with IRF7470PBF and STL220N3LLH6, the RJK0379DPA-WS#J53 delivers superior system-level efficiency in compact, high-frequency power stages due to its integrated Schottky diode, lower gate charge, and WPAK(3F) thermal performance-without requiring PCB redesign or additional components.
Availability
RJK0379DPA-WS#J53 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, automotive body control modules, and industrial LED drivers requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for RJK0379DPA-WS#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0379DPA-WS#J53 belongs to Renesas' WPAK-series power MOSFET product line, engineered for high-density, high-efficiency switching in space-constrained industrial and automotive power systems where low RDS(on), fast switching, and integrated body diode performance are critical.
FAQ
What is the maximum continuous drain current rating for RJK0379DPA-WS#J53?
The RJK0379DPA-WS#J53 is rated for 50 A continuous drain current (ID) at case temperature Tc = 25 °C. Derating applies above this temperature per the power vs. temperature curve on page 3 of the datasheet; at Tc = 100 °C, the usable ID drops to approximately 28 A. This rating assumes proper PCB copper area and thermal management consistent with the WPAK(3F) package's 2.28 °C/W channel-to-case thermal resistance.
Does RJK0379DPA-WS#J53 have an integrated body diode, and what type is it?
Yes, the RJK0379DPA-WS#J53 integrates a Schottky Barrier Diode (SBD) between source and drain. As confirmed on page 1 of the datasheet, this built-in SBD provides forward voltage (VDF) of 0.39 V at IF = 2 A and reverse recovery time (trr) of 35 ns at IF = 50 A, enabling efficient synchronous rectification without external diodes. It is not a parasitic PN junction diode.
Can RJK0379DPA-WS#J53 be driven directly by a 5 V microcontroller GPIO?
Yes, the RJK0379DPA-WS#J53 is explicitly specified for 4.5 V gate drive capability, with RDS(on) = 2.4–3.4 mΩ typical/max at VGS = 4.5 V. A 5 V GPIO meets this requirement with margin, ensuring full enhancement and low conduction loss. Gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, guaranteeing robust noise immunity and turn-on stability across temperature and process variation.
What is the thermal resistance from channel to case (θch–c) for RJK0379DPA-WS#J53?
The channel-to-case thermal resistance (θch–c) of the RJK0379DPA-WS#J53 is 2.28 °C/W, as specified in the Absolute Maximum Ratings table on page 1. This value is measured under standard test conditions (Tc = 25 °C) and reflects the intrinsic thermal path from silicon channel to the exposed drain paddle. Effective heatsinking requires direct thermal interface between the drain pads and a metal heatsink or inner-layer copper pour.
Is RJK0379DPA-WS#J53 suitable for avalanche-rated applications like inductive load switching?
Yes, the RJK0379DPA-WS#J53 is rated for repetitive avalanche operation with IAP = 31 A and EAR = 96 mJ at Tch = 25 °C (page 1). The datasheet includes an avalanche test circuit and derating curve (page 4), confirming suitability for inductive switching in motor drivers and solenoid controls where unclamped inductive energy must be absorbed internally without external snubbers.
RJK0379DPA-WS#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0379DPA-WS#J53 FAQ
1.How can I place an order for RJK0379DPA-WS#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0379DPA-WS#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0379DPA-WS#J53 reliable?
The price and inventory of RJK0379DPA-WS#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0379DPA-WS#J53 is usually 5 days.
3.What payment methods are accepted for RJK0379DPA-WS#J53?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0379DPA-WS#J53 transactions.
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RJK0379DPA-WS#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0379DPA-WS#J53 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0379DPA-WS#J53?
For technical support, including RJK0379DPA-WS#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0379DPA-WS#J53 requirements.
6.How does Aetrix verify that RJK0379DPA-WS#J53 is sourced from the original manufacturer or authorized distributors?
All RJK0379DPA-WS#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0379DPA-WS#J53 meets industry standards.
7.What is the process for return or replacement of RJK0379DPA-WS#J53?
All RJK0379DPA-WS#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0379DPA-WS#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0379DPA-WS#J53 part is unused and in its original packaging.
Return procedure for RJK0379DPA-WS#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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