My Inquiry
My Account
Renesas RJK0380DPA-00#J53
- Part No.:
- RJK0380DPA-00#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0380DPA-00#J53.pdf
- Description:
- POWER TRANSISTOR, MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:69,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
RJK0380DPA-00#J53 from Renesas Electronics is a 30V, 45A N-channel power MOSFET with integrated Schottky body diode, low 3.2 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drivers, and qualified for industrial-grade applications.
For engineers reviewing the RJK0380DPA-00#J53 datasheet, RJK0380DPA-00#J53 pinout, RJK0380DPA-00#J53 application, or RJK0380DPA-00#J53 equivalent, this device offers verified 4.5 V gate drive compatibility, 24 nC total gate charge, built-in SBD for reduced reverse recovery loss, and WPAK(3F) package thermal performance critical for high-density power stages.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching transitions. Its integrated Schottky body diode enables unidirectional current flow with 0.39 V forward voltage at 2 A and 30 ns reverse recovery time-eliminating external diode requirements in synchronous rectification topologies.
The device supports gate drive voltages from 4.5 V to 20 V, delivers 95 S forward transconductance at 22.5 A, and maintains safe operating area (SOA) compliance up to 100 μs single-pulse conditions at Tc = 25°C with RG ≥ 50 Ω for avalanche robustness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage defines use in ≤24 V nominal bus systems with margin for transient spikes. |
| RDS(on) max @ VGS = 10 V | 3.2 mΩ - Enables <1.6 W conduction loss at 45 A continuous drain current with proper heatsinking. |
| RDS(on) max @ VGS = 4.5 V | 4.7 mΩ - Confirmed operation with logic-level gate drivers, reducing need for level-shifting circuitry. |
| Qg | 24 nC - Determines gate driver power requirement and switching loss trade-off in hard-switched topologies. |
| tr/tf | 16 ns / 11.5 ns - Supports >1 MHz switching frequencies in buck converters while limiting EMI generation. |
| VSD (body diode) | 0.39 V @ IF = 2 A - Low forward drop reduces power dissipation during freewheeling in half-bridge configurations. |
| θch–c | 2.5 °C/W - Enables 50 W channel dissipation at ΔT = 125°C case-to-channel rise, supporting high-power density layouts. |
Pinout & Package
Package: WPAK(3F), Renesas code PWSN0008DE-A - thermally enhanced surface-mount package with exposed drain pad for direct PCB thermal coupling and 0.075 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for all three parallel internal dies; requires low-inductance PCB routing to minimize shoot-through risk. |
| 4 | Gate | Single gate input terminal; 1.6 Ω internal gate resistance limits dV/dt-induced turn-on and simplifies driver design. |
| 5, 6, 7, 8 | Drain | Multi-terminal drain connection tied to exposed die-pad; must be soldered to large copper pour for thermal and current handling. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in Schottky body diode | Eliminates external freewheeling diode in synchronous buck or H-bridge designs, reducing BOM count and board space. |
| 4.5 V gate threshold compatibility | Enables direct drive from 5 V or 3.3 V microcontrollers without gate driver ICs in low-frequency switching applications. |
| Low Qgd/Qg ratio (6.7/24 nC) | Improves hard-switching efficiency by reducing Miller plateau duration and minimizing voltage-dependent switching losses. |
| Pb-free and halogen-free construction | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity requirements (MSL 3). |
| 150°C channel temperature rating | Supports operation in sealed enclosures or high-ambient environments where thermal derating of standard 125°C MOSFETs would limit output power. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V input to 5 V/3.3 V point-of-load conversion in industrial PLC modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with forced PWM mode. Use Value: 3.2 mΩ RDS(on) and 24 nC Qg jointly enable >95% efficiency at 20 A load while maintaining thermal stability on 2-layer PCBs. |
Use Scenario: Full-bridge H-bridge driving 24 V, 15 A brushed motors in automated warehouse conveyors. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting reverse current during PWM off-time. Use Value: 0.39 V VDF and 30 ns trr reduce freewheeling losses by 35% versus discrete MOSFET + Schottky solutions at 20 kHz PWM. |
| USB-C Power Delivery Sink | LED Constant-Current Driver |
Use Scenario: Inrush current limiting and overvoltage protection in 100 W USB-C PD sink circuits. IC Role / Device Role / Timing Role: Hot-swap FET placed between input connector and downstream buck controller. Use Value: 180 A peak drain current rating and 62.5 mJ avalanche energy withstand capability protect against cable hot-plug transients without external TVS. |
Use Scenario: Dimmable constant-current LED driver for architectural lighting with 36 V string voltage. IC Role / Device Role / Timing Role: Low-side current-sense switch modulated via analog dimming or PWM. Use Value: 45 A continuous ID rating allows parallel operation of multiple strings; 4.7 mΩ RDS(on) at 4.5 V ensures stable current regulation down to 10% dimming level. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) (4.5 mΩ @ 10 V), no integrated SBD, TO-252 package with higher θJA. | Lacks body diode; requires external Schottky for freewheeling, increasing layout complexity and cost. | Choose when existing TO-252 footprint must be retained and body diode function is implemented externally. |
| SiR872DP-T1-GE3 | Lower RDS(on) (2.0 mΩ @ 10 V), no integrated SBD, PowerPAK SO-8 package with different pinout. | Requires separate freewheeling diode; smaller package limits thermal headroom above 35 A continuous. | Prefer for ultra-low conduction loss in space-constrained designs where thermal management is prioritized over diode integration. |
Compared with IRF7470PBF and SiR872DP-T1-GE3, the RJK0380DPA-00#J53 uniquely combines integrated Schottky body diode, 4.5 V gate drive support, and WPAK(3F) thermal performance-making it optimal for compact, high-efficiency synchronous rectifiers where BOM reduction and thermal reliability are primary selection criteria.
Availability
RJK0380DPA-00#J53 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and LED driver applications requiring stable component supply across multi-year production cycles.
Supply support for RJK0380DPA-00#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0380DPA-00#J53 belongs to Renesas' WPAK-series power MOSFET family, engineered specifically for high-current, high-efficiency switching in space-constrained industrial power supplies and motor drives.
FAQ
What is the maximum continuous drain current rating for RJK0380DPA-00#J53 under typical PCB mounting conditions?
The RJK0380DPA-00#J53 is rated for 45 A continuous drain current (ID) at Tc = 25°C. Under real-world PCB conditions with 1-inch² 2-oz copper on both sides and thermal vias to inner ground planes, sustained current should be limited to 32–35 A to maintain channel temperature below 150°C. Derating curves on page 3 of the R07DS0938EJ0400 datasheet confirm 25 A at Tc = 80°C. The RJK0380DPA-00#J53 must be mounted with full-solder coverage on the drain pad to achieve specified thermal resistance.
Does RJK0380DPA-00#J53 support gate drive from a 3.3 V microcontroller without a level shifter?
No-RJK0380DPA-00#J53 has a gate threshold voltage (VGS(off)) range of 1.2–2.5 V, but its RDS(on) is only guaranteed at VGS ≥ 4.5 V per datasheet Note 4. At 3.3 V, the device operates in weak inversion with uncontrolled RDS(on) (>15 mΩ) and high dynamic losses. The RJK0380DPA-00#J53 requires minimum 4.5 V gate drive for reliable saturation and specified on-resistance performance.
Can RJK0380DPA-00#J53 be used in avalanche mode for clamping applications?
Yes-the RJK0380DPA-00#J53 is characterized for repetitive avalanche with IAP = 25 A and EAR = 62.5 mJ at Tch = 25°C and Rg ≥ 50 Ω (Note 2, Absolute Maximum Ratings). However, avalanche operation must follow the test circuit and waveform constraints shown on page 5 of R07DS0938EJ0400. The RJK0380DPA-00#J53 is not intended for continuous avalanche; it is rated for single-pulse or low-duty-cycle (<0.1%) clamping only.
What is the thermal resistance from channel to case (θch–c) for RJK0380DPA-00#J53, and how is it measured?
The RJK0380DPA-00#J53 has a channel-to-case thermal resistance (θch–c) of 2.5 °C/W, measured with the case temperature (Tc) defined at the center of the exposed drain pad underside per JEDEC JESD51-14. This value assumes full-solder coverage of the drain pad to a 1-inch² copper area with ≥6 thermal vias. The RJK0380DPA-00#J53 datasheet specifies this parameter under Note 3 (Pch test condition) and uses it to derive power derating curves on page 3.
Is the built-in Schottky body diode in RJK0380DPA-00#J53 bidirectional or unidirectional?
The built-in Schottky body diode in RJK0380DPA-00#J53 is unidirectional-conducting only from source to drain (anode at source, cathode at drain). It functions identically to an external Schottky diode placed between those terminals. The RJK0380DPA-00#J53 does not support reverse conduction (drain-to-source) through the body diode; that path remains blocked by the MOSFET's intrinsic PN junction. This behavior is confirmed by the "Body–drain diode forward voltage" and "reverse recovery time" test conditions in the Electrical Characteristics table.
RJK0380DPA-00#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0380DPA-00#J53 FAQ
1.How can I place an order for RJK0380DPA-00#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0380DPA-00#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0380DPA-00#J53 reliable?
The price and inventory of RJK0380DPA-00#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0380DPA-00#J53 is usually 5 days.
3.What payment methods are accepted for RJK0380DPA-00#J53?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0380DPA-00#J53 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0380DPA-00#J53?
RJK0380DPA-00#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0380DPA-00#J53 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0380DPA-00#J53?
For technical support, including RJK0380DPA-00#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0380DPA-00#J53 requirements.
6.How does Aetrix verify that RJK0380DPA-00#J53 is sourced from the original manufacturer or authorized distributors?
All RJK0380DPA-00#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0380DPA-00#J53 meets industry standards.
7.What is the process for return or replacement of RJK0380DPA-00#J53?
All RJK0380DPA-00#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0380DPA-00#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0380DPA-00#J53 part is unused and in its original packaging.
Return procedure for RJK0380DPA-00#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RJK0380DPA-00#J53 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
