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Renesas RJK0380DPA-02#J0
- Part No.:
- RJK0380DPA-02#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0380DPA-02#J0.pdf
- Description:
- POWER TRANSISTOR, MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:15,000
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Product details
Overview
RJK0380DPA-02#J0 from Renesas Electronics is a 30V, 45A N-channel power MOSFET with integrated Schottky body diode, low 3.2 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drives, and qualified for industrial-grade applications.
For engineers reviewing the RJK0380DPA-02#J0 datasheet, RJK0380DPA-02#J0 pinout, RJK0380DPA-02#J0 application, or RJK0380DPA-02#J0 equivalent, key selection criteria include its 4.5 V gate drive capability, 24 nC total gate charge, built-in SBD for reduced reverse recovery loss, and WPAK(3F) package thermal performance (θch-C = 2.5 °C/W).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in synchronous rectification and high-frequency buck converters. Its integrated Schottky body diode enables fast reverse recovery (trr = 30 ns) and eliminates external diode requirements in flyback or half-bridge topologies.
The device supports logic-level gate drive down to 4.5 V, delivering 3.3 mΩ typical RDS(on) under that condition, and features low Crss (330 pF) and Qgd/Qg ratio (6.7/24 nC), enhancing voltage-controlled turn-off robustness in hard-switched applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V input systems and 12 V rail switching. |
| RDS(on) max @ VGS = 10 V | 3.2 mΩ - Enables ≤1.6 W conduction loss at 45 A, supporting high-current power stages without forced air cooling. |
| Qg | 24 nC - Determines gate driver current requirement (~2.4 A peak for 10 ns rise time), critical for PWM controller compatibility. |
| tr/tf | 16 ns / 11.5 ns - Supports >1 MHz switching frequencies with minimal overlap loss in synchronous buck designs. |
| VGS(th) | 1.2–2.5 V - Ensures reliable enhancement-mode turn-on with standard microcontroller GPIO or dedicated gate drivers. |
| θch-C | 2.5 °C/W - Allows 50 W channel dissipation at 25 °C case temperature, enabling compact heatsink integration. |
| trr | 30 ns - Reduces body-diode switching loss and EMI in discontinuous conduction mode (DCM) operation. |
Pinout & Package
Package: WPAK(3F) (RENESAS code PWSN0008DE-A), surface-mount, thermally enhanced leadframe with exposed drain pad; dimensions 5.9 mm × 4.9 mm × 1.27 mm; mass 0.075 g; Pb-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel FET cells; electrically tied to PCB ground plane via multiple pins for low-inductance return path. |
| 4 | Gate | Control terminal requiring <±20 V rating; low 1.6 Ω gate resistance minimizes ringing and simplifies RC snubber design. |
| 5, 6, 7, 8 | Drain | High-current drain node connected to exposed die-pad; must be soldered to large copper area for thermal and current handling. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in Schottky body diode | Eliminates need for external freewheeling diode, reduces BOM count and board space in buck/flyback converters. |
| 4.5 V gate drive capability | Enables direct interface with 5 V or 3.3 V logic outputs, avoiding level-shifter circuitry in low-voltage control systems. |
| Low Qgd/Qg ratio (28%) | Improves Miller immunity and dV/dt ruggedness during high-side switching, reducing risk of false turn-on in half-bridge configurations. |
| High-density WPAK(3F) package | Provides 3× lower thermal resistance than SO-8 while occupying ~40% less PCB area, ideal for space-constrained power modules. |
| Pb-free and halogen-free construction | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity, supporting automated reflow assembly. |
Applications
| DC-DC Buck Converter | BLDC Motor Inverter |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V point-of-load regulator in networking equipment. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500 kHz–1 MHz, replacing external Schottky diode to reduce forward drop and improve light-load efficiency. Use Value: 3.2 mΩ RDS(on) and 30 ns trr cut conduction and recovery losses by >35% versus discrete MOSFET + diode solutions. | Use Scenario: Low-voltage (<30 V) 3-phase inverter for cordless power tools and e-bike controllers. IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation, leveraging 45 A continuous current rating and avalanche energy rating (62.5 mJ) for transient overload tolerance. Use Value: Integrated SBD prevents shoot-through during dead-time and reduces EMI from reverse recovery spikes in high-dV/dt motor drive waveforms. |
| Hot-Swap Controller | USB PD Power Path |
Use Scenario: Inrush current limiting and fault protection in 24 V industrial backplane power distribution. IC Role / Device Role / Timing Role: Main pass transistor controlled by external current-sense amplifier and comparator, using low RDS(on) to minimize insertion loss and self-heating during sustained load. Use Value: 2.5 °C/W thermal resistance allows full 45 A operation with only 112.5 °C junction rise above case, enabling passive thermal management. | Use Scenario: 20 V/5 A USB Power Delivery (PD) 3.0 power path switch in portable docking stations. IC Role / Device Role / Timing Role: Reverse-blocking, bidirectional power switch with fast turn-off (tf = 11.5 ns) to meet USB PD fault response timing requirements (<10 µs). Use Value: 30 V VDSS and ±20 V VGS rating ensure safe operation across full USB PD voltage range (5–20 V) with margin for transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.3 mΩ @ 10 V; no integrated SBD; TO-220AB package; higher θJA (62 °C/W). | Lacks body diode; requires external diode; unsuitable for synchronous rectification without redesign. | Choose when legacy TO-220 footprint is required and body diode functionality is not needed. |
| SiR872DP-T1-GE3 | RDS(on) = 2.9 mΩ @ 10 V; no integrated SBD; PowerPAK SO-8; Qg = 32 nC; higher gate charge. | Higher switching loss due to larger Qg; no SBD means added component count and layout complexity. | Prefer when lowest RDS(on) is primary goal and thermal constraints allow larger gate driver sizing. |
Compared with IRL3803PBF and SiR872DP-T1-GE3, RJK0380DPA-02#J0 delivers system-level simplification through its integrated Schottky body diode, superior thermal performance in the WPAK(3F) package, and optimized gate charge for high-frequency operation-making it uniquely suited for compact, high-efficiency DC-DC and motor drive designs where BOM reduction and thermal density matter.
Availability
RJK0380DPA-02#J0 is available at Aetrix Electronics and suitable for DC-DC buck converters, BLDC motor inverters, hot-swap controllers, and USB PD power path applications requiring stable component supply and industrial-grade reliability.
Supply support for RJK0380DPA-02#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for automotive, industrial, and enterprise markets.
The RJK0380DPA-02#J0 belongs to Renesas' WPAK-series power MOSFET product line, engineered for high-current, high-frequency switching in space-constrained industrial power supplies and motor control systems.
FAQ
What is the maximum continuous drain current rating for RJK0380DPA-02#J0?
The RJK0380DPA-02#J0 is rated for 45 A continuous drain current (ID) at Tc = 25 °C. This rating assumes proper PCB copper area for thermal conduction and derates linearly with increasing case temperature per the power vs. temperature derating curve on page 3 of the datasheet. At Tc = 100 °C, the usable ID drops to approximately 25 A.
Does RJK0380DPA-02#J0 require a gate resistor for stability?
Yes, RJK0380DPA-02#J0 benefits from an external gate resistor (Rg) to dampen oscillation and control switching speed. The datasheet specifies Rg = 4.7 Ω for switching time measurements and recommends ≥50 Ω for avalanche testing. Typical design values range from 2.2 Ω to 10 Ω depending on EMI and loss trade-offs in the target application.
Can RJK0380DPA-02#J0 be used in avalanche mode?
Yes, RJK0380DPA-02#J0 is characterized for repetitive avalanche operation with IAP = 25 A and EAR = 62.5 mJ at Tch = 25 °C. Its avalanche capability is validated per the test circuit on page 5, but sustained avalanche use requires careful thermal management and gate drive robustness to avoid cumulative degradation of the RJK0380DPA-02#J0.
What is the significance of the "-02#J0" suffix in RJK0380DPA-02#J0?
The "-02#J0" suffix denotes a specific tape-and-reel packaging variant: "-02" indicates taping per JEDEC standard, "#" replaces the second hyphen per Renesas ordering convention, and "J0" identifies the carrier tape width and reel size (3,000 pcs/reel). This matches the "RJK0380DPA-00-J5A" base part shown in the Ordering Information table, confirming RJK0380DPA-02#J0 is a valid orderable version of the RJK0380DPA-02#J0.
Is RJK0380DPA-02#J0 suitable for automotive applications?
No, RJK0380DPA-02#J0 is classified as a "Standard" quality grade device per Renesas documentation (page 6), intended for industrial, computing, and consumer equipment-not transportation or safety-critical systems. For automotive use, Renesas offers AEC-Q101-qualified variants under different part numbering (e.g., RJK0380DPA-02#J0 is not AEC-Q101 certified).
RJK0380DPA-02#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0380DPA-02#J0 FAQ
1.How can I place an order for RJK0380DPA-02#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0380DPA-02#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0380DPA-02#J0 reliable?
The price and inventory of RJK0380DPA-02#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0380DPA-02#J0 is usually 5 days.
3.What payment methods are accepted for RJK0380DPA-02#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0380DPA-02#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0380DPA-02#J0?
RJK0380DPA-02#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0380DPA-02#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0380DPA-02#J0?
For technical support, including RJK0380DPA-02#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0380DPA-02#J0 requirements.
6.How does Aetrix verify that RJK0380DPA-02#J0 is sourced from the original manufacturer or authorized distributors?
All RJK0380DPA-02#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0380DPA-02#J0 meets industry standards.
7.What is the process for return or replacement of RJK0380DPA-02#J0?
All RJK0380DPA-02#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0380DPA-02#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0380DPA-02#J0 part is unused and in its original packaging.
Return procedure for RJK0380DPA-02#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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