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Renesas RJK0380DPA-WS#J53
- Part No.:
- RJK0380DPA-WS#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0380DPA-WS#J53.pdf
- Description:
- POWER TRANSISTOR, MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:320
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Product details
Overview
RJK0380DPA-WS#J53 from Renesas Electronics is a 30V, 45A N-channel power MOSFET with integrated Schottky body diode, low 3.2 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drivers, and qualified for industrial-grade applications.
For engineers reviewing the RJK0380DPA-WS#J53 datasheet, RJK0380DPA-WS#J53 pinout, RJK0380DPA-WS#J53 application, or RJK0380DPA-WS#J53 equivalent, key selection criteria include its 4.5 V gate drive capability, 24 nC total gate charge, built-in SBD for reduced reverse recovery loss, and WPAK(3F) thermally enhanced package with 2.5 °C/W θch–c.
Technical Context
This MOSFET employs a trench-gate process optimized for low conduction loss and fast switching, supporting pulse-width modulation (PWM) operation up to 1 MHz with 14 ns turn-on delay and 11.5 ns fall time under standard test conditions. Its integrated Schottky body diode enables unidirectional freewheeling with 0.39 V forward voltage at 2 A and 30 ns reverse recovery time.
The device operates with ±20 V gate-source voltage rating and supports avalanche energy of 62.5 mJ at Tch = 25 °C, enabling robustness against inductive load transients. Thermal design is facilitated by direct die-to-case thermal path in the WPAK(3F) package, delivering 50 W channel dissipation at Tc = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V/24 V bus-level switching applications |
| RDS(on) max | 3.2 mΩ at VGS = 10 V - Enables <1.5 W conduction loss at 45 A continuous current |
| ID | 45 A - Continuous drain current rating at Tc = 25 °C with adequate heatsinking |
| Qg | 24 nC - Gate drive energy requirement compatible with standard PWM controllers |
| VGS(th) | 1.2–2.5 V - Ensures reliable enhancement-mode turn-on with 4.5 V logic-level gate drive |
| tr/tf | 16 ns / 11.5 ns - Supports high-frequency switching with minimal overlap loss |
| VDF | 0.39 V at IF = 2 A - Low forward drop of integrated Schottky body diode reduces freewheeling loss |
Pinout & Package
Package: WPAK(3F), Renesas code PWSN0008DE-A - thermally optimized surface-mount package with exposed drain pad for low θch–c (2.5 °C/W) and high-density mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for all three internal parallel cells; tied to PCB ground plane |
| 4 | Gate | Control terminal; requires ≤20 V drive; low 1.6 Ω gate resistance minimizes ringing |
| 5, 6, 7, 8 | Drain | Power output node; electrically and thermally connected to large exposed copper pad on bottom |
Key Features
| Feature | Design Value |
|---|---|
| Built-in Schottky body diode | Eliminates need for external freewheeling diode; reduces BOM count and layout area in buck converters |
| 4.5 V gate drive compatibility | Direct interface with 3.3 V/5 V microcontrollers and gate drivers without level-shifting circuitry |
| Low RDS(on) × Qg figure-of-merit | ~77 mΩ·nC - balances conduction and switching losses for high-efficiency 100–500 kHz SMPS designs |
| Pb-free and halogen-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
| High-current pulse capability | 180 A peak drain current (10 μs, 1% duty) supports motor stall and surge current handling |
Applications
| DC-DC Buck Converter | BLDC Motor Inverter Half-Bridge |
|---|---|
Use Scenario: Step-down conversion from 24 V battery to 5 V/3.3 V logic rails in industrial PLC modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz PWM frequency with dead-time control. Use Value: 3.2 mΩ RDS(on) limits conduction loss to <1.2 W at 45 A, while 24 nC Qg ensures clean 14 ns turn-on with standard gate driver ICs. | Use Scenario: Low-voltage (<30 V) brushless DC motor drive in HVAC blowers and automated valves. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter leg, commutated at 10–20 kHz with 120° trapezoidal excitation. Use Value: Integrated Schottky body diode provides fast, low-loss freewheeling during PWM off-time, eliminating external diode and reducing EMI from reverse recovery. |
| Hot-Swap Controller | Load Switch for Industrial I/O Module |
Use Scenario: Inrush current limiting and fault protection in 12 V/24 V backplane power distribution units. IC Role / Device Role / Timing Role: Main pass transistor controlled by external current-sense amplifier and comparator for soft-start and overcurrent shutdown. Use Value: 45 A continuous rating and 180 A pulse capability support high-power hot-plug events; 2.5 °C/W θch–c enables compact thermal design without forced air. | Use Scenario: Controlled power enable for isolated analog sensor inputs and digital fieldbus interfaces in factory automation systems. IC Role / Device Role / Timing Role: Single-pole, single-throw electronic switch activated via microcontroller GPIO with 4.5 V logic-compatible gate. Use Value: Low 2.4 mΩ typical RDS(on) at 4.5 V gate drive ensures <50 mV voltage drop at 20 A load, preserving signal integrity and minimizing self-heating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | Higher RDS(on) (3.9 mΩ @ 10 V), no integrated SBD, TO-220AB package | Larger footprint and higher thermal resistance (1.5 °C/W junction-to-case vs. 2.5 °C/W channel-to-case) | Choose when through-hole assembly or legacy TO-220 layout reuse is required |
| SiR872DP-T1-GE3 | Lower RDS(on) (2.0 mΩ @ 10 V), no integrated SBD, PowerPAK SO-8L package | Smaller footprint but lacks body diode; requires external Schottky for freewheeling paths | Prefer when maximum efficiency at high current is critical and external diode integration is acceptable |
Compared with IRL3803PBF and SiR872DP-T1-GE3, RJK0380DPA-WS#J53 uniquely combines logic-level gate drive, integrated Schottky body diode, and thermally optimized WPAK(3F) packaging-making it optimal for space-constrained, high-reliability industrial DC-DC and motor control where body diode performance and thermal management are critical.
Availability
RJK0380DPA-WS#J53 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and hot-swap controllers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for RJK0380DPA-WS#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
RJK0380DPA-WS#J53 belongs to Renesas' Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems where thermal performance and gate-drive simplicity are essential.
FAQ
What is the maximum continuous drain current rating for RJK0380DPA-WS#J53?
The RJK0380DPA-WS#J53 is rated for 45 A continuous drain current at case temperature Tc = 25 °C with sufficient heatsinking. Derating applies above 25 °C per the power vs. temperature curve on page 3 of the datasheet, reaching zero current at Tc ≈ 175 °C. At Tc = 75 °C, the usable continuous current drops to approximately 30 A.
Does RJK0380DPA-WS#J53 have an integrated body diode, and what are its characteristics?
Yes, RJK0380DPA-WS#J53 integrates a Schottky barrier diode (SBD) between source and drain. Its forward voltage is 0.39 V at IF = 2 A and VGS = 0, with reverse recovery time trr of 30 ns at IF = 45 A and di/dt = 100 A/μs. This SBD enables efficient freewheeling without external diodes in buck or half-bridge topologies.
Can RJK0380DPA-WS#J53 be driven directly by a 3.3 V microcontroller GPIO?
No - while RJK0380DPA-WS#J53 is specified for 4.5 V gate drive, its gate threshold voltage VGS(off) ranges from 1.2 V to 2.5 V, meaning a 3.3 V signal may partially enhance the channel but will not achieve full RDS(on) specification. For guaranteed 3.2 mΩ performance, ≥4.5 V gate drive is required; use a level-shifter or gate driver IC if interfacing with 3.3 V logic.
What is the thermal resistance from channel to case (θch–c) for RJK0380DPA-WS#J53?
The channel-to-case thermal resistance θch–c of RJK0380DPA-WS#J53 is 2.5 °C/W, measured under standard test conditions (Tc = 25 °C). This value reflects the thermal path from silicon channel to the exposed drain pad in the WPAK(3F) package and is critical for calculating junction temperature rise in thermally constrained layouts.
Is RJK0380DPA-WS#J53 suitable for avalanche-rated applications?
Yes - RJK0380DPA-WS#J53 is characterized for repetitive avalanche operation with IAP = 25 A and EAR = 62.5 mJ at Tch = 25 °C (Rg ≥ 50 Ω). It is designed to withstand inductive switching stresses common in motor drives and solenoid controls, provided avalanche energy per pulse remains within the derated curve shown on page 4 of the datasheet.
RJK0380DPA-WS#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0380DPA-WS#J53 FAQ
1.How can I place an order for RJK0380DPA-WS#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0380DPA-WS#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0380DPA-WS#J53 reliable?
The price and inventory of RJK0380DPA-WS#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0380DPA-WS#J53 is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0380DPA-WS#J53 transactions.
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RJK0380DPA-WS#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0380DPA-WS#J53 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0380DPA-WS#J53?
For technical support, including RJK0380DPA-WS#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0380DPA-WS#J53 requirements.
6.How does Aetrix verify that RJK0380DPA-WS#J53 is sourced from the original manufacturer or authorized distributors?
All RJK0380DPA-WS#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0380DPA-WS#J53 meets industry standards.
7.What is the process for return or replacement of RJK0380DPA-WS#J53?
All RJK0380DPA-WS#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0380DPA-WS#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0380DPA-WS#J53 part is unused and in its original packaging.
Return procedure for RJK0380DPA-WS#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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