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Renesas RJK0381DPA-WS#J53
- Part No.:
- RJK0381DPA-WS#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0381DPA-WS#J53.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,110
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Product details
Overview
RJK0381DPA-WS#J53 from Renesas Electronics is a 30V, 40A N-channel power MOSFET with integrated Schottky body diode, low 4.5 mΩ max RDS(on) at VGS = 10 V, and optimized for high-speed switching in DC-DC converters and motor drivers. It supports 4.5 V gate drive and delivers 15 nC total gate charge.
For engineers reviewing the RJK0381DPA-WS#J53 datasheet, RJK0381DPA-WS#J53 pinout, RJK0381DPA-WS#J53 application, or RJK0381DPA-WS#J53 equivalent, key selection criteria include its WPAK(3F) package thermal resistance (θch–c = 2.78 °C/W), avalanche energy rating (28.9 mJ), and body-diode reverse recovery time (21 ns).
Technical Context
This MOSFET uses a trench-gate silicon process to achieve low on-resistance and fast switching. Its built-in Schottky body diode enables synchronous rectification without external diode placement, reducing conduction loss and layout complexity in buck converters.
The device operates with gate threshold voltage between 1.2 V and 2.5 V and exhibits strong temperature stability: RDS(on) increases only ~25% from –25°C to 125°C at VGS = 4.5 V. Its 2200 pF input capacitance and 225 pF reverse transfer capacitance support stable PWM control up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V nominal bus systems with transient margin. |
| RDS(on) max @ VGS = 10 V | 4.5 mΩ - Enables <1.8 W conduction loss at 20 A continuous current with minimal heatsinking. |
| Qg | 15 nC - Low gate charge reduces driver power requirement and enables efficient 500 kHz+ switching. |
| tr/tf | 15 ns / 10 ns - Fast edge rates minimize switching loss and EMI generation in hard-switched topologies. |
| VSD @ IF = 2 A | 0.40 V - Low forward voltage of integrated Schottky diode cuts freewheeling loss vs. standard MOSFET body diode. |
| EAR | 28.9 mJ - Rated repetitive avalanche energy supports robust operation under inductive load turn-off stress. |
| θch–c | 2.78 °C/W - High thermal conductivity from channel to case enables 45 W dissipation at Tc = 25°C. |
Pinout & Package
Package: WPAK(3F), Renesas code PWSN0008DE-A - surface-mount, thermally enhanced leadframe package with exposed drain pad and 3.92 mm × 4.90 mm footprint. Optimized for high-current PCB copper pour attachment and automated optical inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for all three internal die segments; electrically tied and thermally coupled to PCB ground plane. |
| 4 | Gate | Single-point gate input; requires low-inductance routing to minimize ringing during fast transitions. |
| 5, 6, 7, 8 | Drain | Parallel-connected drain terminals forming low-inductance, high-current path to power rail and thermal pad. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in Schottky body diode | Eliminates need for external freewheeling diode; reduces BOM count and board area in synchronous buck stages. |
| 4.5 V gate drive capability | Direct compatibility with 5 V logic and microcontroller GPIOs without level-shifting circuitry. |
| Low RDS(on) × Qg figure-of-merit | ~67.5 mΩ·nC - balances conduction and switching loss for high-efficiency mid-power SMPS designs. |
| Pb-free and halogen-free construction | Meets JEDEC J-STD-020 moisture sensitivity level 3 and RoHS Directive 2011/65/EU compliance. |
| High-density mounting | WPAK(3F) footprint occupies ~19 mm² - 35% smaller than comparable SO-8 packages while delivering higher current. |
Applications
| Motor Drive H-Bridge Leg | DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Half-bridge high-side and low-side switching in 24 V brushed DC motor controllers for industrial actuators. IC Role / Device Role / Timing Role: Power switch controlling motor phase current; operated in PWM mode at 20–100 kHz with dead-time management. Use Value: Integrated Schottky diode enables clean freewheeling during off-time, reducing heat rise by ~15% versus discrete MOSFET + diode solutions. | Use Scenario: Output stage of 12–24 V input to 3.3/5/12 V output point-of-load converter in telecom base station power modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier; commutated at 500 kHz with precise gate timing to minimize shoot-through risk. Use Value: 4.5 mΩ RDS(on) and 21 ns trr reduce conduction and reverse recovery losses, achieving >95% efficiency at 20 A load. |
| Automotive Body Control Module | LED Driver for High-Brightness Lighting |
Use Scenario: Load switching for solenoids, relays, and window lift motors in ISO 16750-compliant automotive BCMs. IC Role / Device Role / Timing Role: High-current load switch with integrated protection; driven by 3.3 V or 5 V MCU outputs. Use Value: 40 A continuous rating and 160 A pulse capability handle inrush currents of automotive inductive loads without derating. | Use Scenario: Constant-current switching element in 24 V automotive LED headlamp drivers with PWM dimming. IC Role / Device Role / Timing Role: Series-pass switch modulated at 1–2 kHz to regulate LED string current. Use Value: Low 0.40 V body diode forward voltage prevents reverse current leakage during PWM off-cycles, preserving dimming linearity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PbF | RDS(on) = 6.0 mΩ @ 10 V; TO-220AB package; no integrated Schottky diode; higher θJA (62 °C/W). | Limited to lower-frequency (<100 kHz), non-synchronous designs due to slower body diode recovery (≈100 ns). | Select when cost-sensitive, through-hole assembly is required, and thermal budget allows larger heatsink. |
| SiR872DP-T1-GE3 | RDS(on) = 4.0 mΩ @ 10 V; PowerPAK SO-8; integrated Schottky diode; Qg = 22 nC; slightly higher Ciss. | Better suited for ultra-high-density layouts but less robust in avalanche (EAR = 18 mJ) and lower ID(pulse) (120 A). | Select when PCB space is critical and peak avalanche stress is minimal; verify gate driver strength for higher Qg. |
Compared with IRL3803PbF and SiR872DP-T1-GE3, the RJK0381DPA-WS#J53 offers superior thermal performance (2.78 °C/W vs. >30 °C/W), tighter RDS(on) distribution, and guaranteed 28.9 mJ avalanche energy-making it preferred for compact, high-reliability 24 V industrial and automotive power stages.
Availability
RJK0381DPA-WS#J53 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, automotive body control modules, and high-brightness LED drivers requiring stable component supply across production lifecycles.
Supply support for RJK0381DPA-WS#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0381DPA-WS#J53 belongs to Renesas' WPAK-series power MOSFET product line, engineered for high-current, high-efficiency switching in space-constrained 24 V systems where thermal management and fast recovery are critical.
FAQ
What is the maximum continuous drain current rating for RJK0381DPA-WS#J53?
The RJK0381DPA-WS#J53 has a rated continuous drain current (ID) of 40 A at Tc = 25°C. Derating applies above this case temperature per the power vs. temperature curve: at Tc = 100°C, the usable ID drops to approximately 22 A. This rating assumes proper PCB copper area for thermal conduction and is validated under pulse test conditions with specified gate drive.
Does RJK0381DPA-WS#J53 require a gate resistor for stable operation?
Yes, a gate resistor is recommended for RJK0381DPA-WS#J53 to control dV/dt and suppress oscillation. The datasheet specifies Rg ≥ 50 Ω for avalanche testing and recommends Rg = 4.7 Ω for switching time characterization. Typical design values range from 2.2 Ω to 10 Ω depending on driver strength and EMI requirements. The device's measured gate resistance is 2.3 Ω, so external Rg sets total series impedance.
Can RJK0381DPA-WS#J53 be used in synchronous rectification without an external Schottky diode?
Yes, RJK0381DPA-WS#J53 integrates a Schottky barrier diode (SBD) between source and drain, enabling true synchronous rectification without external diodes. Its VDF = 0.40 V at IF = 2 A and trr = 21 ns significantly outperform conventional MOSFET body diodes, reducing conduction loss and eliminating reverse recovery spikes in buck and flyback topologies.
What is the thermal resistance from channel to case (θch–c) for RJK0381DPA-WS#J53?
The RJK0381DPA-WS#J53 has a channel-to-case thermal resistance (θch–c) of 2.78 °C/W, measured under Tc = 25°C conditions. This value reflects direct conduction from the silicon die to the exposed drain pad and is critical for calculating junction temperature in thermally constrained layouts. It assumes full solder coverage of the thermal pad to a minimum 100 mm² copper pour.
Is RJK0381DPA-WS#J53 compliant with automotive AEC-Q101 qualification?
No, RJK0381DPA-WS#J53 is not AEC-Q101 qualified. Per Renesas documentation, it is classified as a "Standard" grade product intended for industrial, computing, and consumer applications-not automotive safety-critical systems. For AEC-Q101-compliant alternatives in the same WPAK(3F) package, consult Renesas' RAJ-series or contact Aetrix Electronics for pre-qualified drop-in options.
RJK0381DPA-WS#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0381DPA-WS#J53 FAQ
1.How can I place an order for RJK0381DPA-WS#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0381DPA-WS#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0381DPA-WS#J53 reliable?
The price and inventory of RJK0381DPA-WS#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0381DPA-WS#J53 is usually 5 days.
3.What payment methods are accepted for RJK0381DPA-WS#J53?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0381DPA-WS#J53 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0381DPA-WS#J53?
RJK0381DPA-WS#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0381DPA-WS#J53 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0381DPA-WS#J53?
For technical support, including RJK0381DPA-WS#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0381DPA-WS#J53 requirements.
6.How does Aetrix verify that RJK0381DPA-WS#J53 is sourced from the original manufacturer or authorized distributors?
All RJK0381DPA-WS#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0381DPA-WS#J53 meets industry standards.
7.What is the process for return or replacement of RJK0381DPA-WS#J53?
All RJK0381DPA-WS#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0381DPA-WS#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0381DPA-WS#J53 part is unused and in its original packaging.
Return procedure for RJK0381DPA-WS#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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