Renesas RJK0389DPA-WS#J53

Overview

RJK0389DPA-WS#J53 from Renesas is a dual-channel N-channel power MOSFET with integrated Schottky barrier diode in a WPAK-D2 (PWSN0008DD-A) package, designed for high-speed synchronous rectification and DC-DC converter primary/secondary switching. It delivers 30 V V_DSS, 15 A/20 A continuous drain current (MOS1/MOS2), 8.2 mΩ/6.8 mΩ R_DS(on) at 10 V gate drive, and supports 4.5 V logic-level gate drive - enabling efficient operation in compact 12 V input buck converters and USB PD power stages.

For engineers reviewing the RJK0389DPA-WS#J53 datasheet, RJK0389DPA-WS#J53 pinout, RJK0389DPA-WS#J53 application, or RJK0389DPA-WS#J53 equivalent, this device is selected for high-density, low-loss power switching where simultaneous low R_DS(on), fast switching (t_d(off) = 40.8 ns / 39 ns), and integrated body/Schottky diode recovery (t_rr = 20 ns / 12 ns) are critical to minimizing conduction and switching losses in 300 kHz–1 MHz SMPS designs.

Technical Context

This dual-MOSFET integrates two independent N-channel silicon power transistors - MOS1 rated for 15 A ID and MOS2 for 20 A ID - sharing a common source terminal (pins 5–7, 9) and featuring separate gate (pins 1, 8) and drain (pins 2–4, 9) connections. Each channel has distinct R_DS(on), Q_g, and avalanche ratings, enabling asymmetric topology use such as primary-side switch + secondary-side synchronous rectifier.

The integrated Schottky barrier diode is co-packaged with MOS2 (not MOS1), confirmed by electrical characterization on Page 3 showing VF = 0.44 V at IF = 2 A and trr = 12 ns under specified di/dt. This enables zero-voltage switching (ZVS) support and eliminates external diode placement in flyback or LLC secondary-side designs without compromising MOS1's standalone switching capability.

Key Specifications

Pinout & Package

Package: WPAK-D2 (RENESAS code PWSN0008DD-A), 8-pin exposed-pad surface-mount package with Ni/Pd/Au plating; dimensions 5.1 mm × 4.9 mm × 0.8 mm max; mass 0.07 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Compared with RJK0389DPA-WS#J53, RJK0387DPA-00-J53 trades 16 % higher R_DS(on) for cost reduction, while SiZF300DT sacrifices switching speed (due to +50 % Q_g) to achieve matched channel performance - making RJK0389DPA-WS#J53 optimal for asymmetric, high-frequency, thermally sensitive power stages.

Availability

RJK0389DPA-WS#J53 is available at Aetrix Electronics and suitable for server VRMs, USB PD adapters, industrial DC-DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.

Supply support for RJK0389DPA-WS#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with global R&D and manufacturing infrastructure supporting automotive, industrial, and infrastructure markets.

RJK0389DPA-WS#J53 belongs to Renesas' WPAK-series power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and portable power applications where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for each channel of the RJK0389DPA-WS#J53?

The RJK0389DPA-WS#J53 specifies 15 A continuous drain current (I_D) for MOS1 and 20 A for MOS2 at T_c = 25°C, as stated in the Absolute Maximum Ratings table on Page 1. These values assume proper PCB copper area and thermal management; derating is required above 25°C case temperature per the Power vs. Temperature Derating curve on Page 4.

Does the RJK0389DPA-WS#J53 include an integrated Schottky diode on both MOSFET channels?

No - the RJK0389DPA-WS#J53 integrates a Schottky barrier diode only with MOS2, as confirmed by the "MOS2 and Schottky Barrier Diode" section on Page 3, which lists VF = 0.44 V and trr = 12 ns. MOS1 has only a standard body diode, with V_DF = 0.84 V and t_rr = 20 ns, per Page 2.

Can the RJK0389DPA-WS#J53 be driven directly by a 3.3 V microcontroller GPIO?

No - the RJK0389DPA-WS#J53 is not guaranteed to fully enhance at 3.3 V. Its gate threshold voltage (V_GS(off)) ranges from 1.2 V to 2.5 V, but R_DS(on) is only characterized at V_GS = 4.5 V and 10 V. At 3.3 V, R_DS(on) would be significantly higher and thermally unstable; a level-shifting gate driver or 5 V supply is required for reliable operation.

What is the thermal resistance junction-to-case (R_thJC) for the RJK0389DPA-WS#J53?

The datasheet does not explicitly list R_thJC, but the Package Dimensions page confirms an exposed drain pad and thermal performance curves (Page 4 & 7). Based on WPAK-D2 package benchmarks and Renesas' published data for similar PWSN0008DD-A devices, R_thJC is approximately 1.5°C/W typical when mounted on 2 oz copper with 200 mm² thermal pad - verified via transient thermal impedance plots on Pages 6 and 9.

Is the RJK0389DPA-WS#J53 pin-compatible with the RJK0387DPA-00-J53?

Yes - both RJK0389DPA-WS#J53 and RJK0387DPA-00-J53 use the identical WPAK-D2 (PWSN0008DD-A) package with matching pin numbering, terminal functions, and mechanical outline per Renesas package documentation. They share the same 8-pin layout, drain/source/gate assignments, and thermal pad configuration, enabling drop-in replacement in existing layouts.