My Inquiry
My Account
Renesas RJK0390DPA-00#J53
- Part No.:
- RJK0390DPA-00#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
RJK0390DPA-00#J53.pdf
- Description:
- MOSFET N-CH 30V 65A 8WPAK
- Quantity:
- Payment:
- Shipping:
Inventory:60,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
RJK0390DPA-00#J53 from Renesas Electronics is a 30V, 65A N-channel power MOSFET in WPAK(3F) package with 2.2 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drive half-bridges, and capable of direct 4.5 V gate drive.
For engineers reviewing the RJK0390DPA-00#J53 datasheet, RJK0390DPA-00#J53 pinout, RJK0390DPA-00#J53 application, or RJK0390DPA-00#J53 equivalent, key selection criteria include its low 2.1 mΩ RDS(on) at 4.5 V gate drive, 54 nC total gate charge, and 260 A drain peak current capability under pulsed conditions.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching transitions. Its 8900 pF input capacitance (Ciss) and 570 pF reverse transfer capacitance (Crss) support stable operation in synchronous buck topologies with moderate gate drive strength.
The device integrates a robust body diode with 45 ns reverse recovery time and 0.79 V forward voltage at 65 A, enabling efficient freewheeling in hard-switched H-bridge configurations without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in off-state; suitable for 24 V nominal bus systems with transient margin. |
| RDS(on) max @ 10 V | 2.2 mΩ - Conduction loss of ≤ 9.2 mW at 65 A DC, enabling high-efficiency power stages. |
| Qg | 54 nC - Gate drive energy requirement dictates minimum driver output current for <100 ns turn-on. |
| td(off) | 92 ns - Critical timing parameter for dead-time setting in synchronous rectification to prevent shoot-through. |
| ID(pulse) | 260 A - Supports short-duration overload conditions such as motor stall or inrush limiting. |
| θch-c | 2.08 °C/W - Enables 60 W continuous dissipation with ≤125 °C case temperature rise above ambient. |
| VGS(th) | 1.2–2.5 V - Ensures reliable enhancement-mode turn-on with standard logic-level gate drivers. |
Pinout & Package
Package: WPAK(3F), 8-pin exposed-drain thermally enhanced surface-mount package (RENESAS code PWSN0008DE-A), with integrated die-pad thermal path and high-density mounting footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Low-side reference node; electrically and thermally connected to PCB ground plane via soldered pad. |
| 4 | Gate | Control terminal requiring <54 nC charge; sensitive to ESD and ringing; routed away from noisy power traces. |
| 5, 6, 7, 8 | Drain | Main power output node; internally paralleled for low inductance and high-current capacity; tied to heatsink or power plane. |
Key Features
| Feature | Design Value |
|---|---|
| 4.5 V gate drive compatibility | Guarantees full enhancement at logic-level voltages, eliminating need for gate boosters in 5 V or 3.3 V control systems. |
| 2.2 mΩ RDS(on) max | Reduces conduction losses by >35% versus comparable 30 V MOSFETs, directly improving thermal margin in compact converters. |
| Low Qgd/Qg ratio (21%) | Improves switching efficiency and Miller immunity, supporting stable operation up to 500 kHz in hard-switched topologies. |
| 8900 pF Ciss | Enables predictable gate drive design with standard 1–2 A peak drivers while maintaining manageable EMI profile. |
| Pb-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally regulated industrial and automotive applications. |
Applications
| DC-DC Buck Converter | BLDC Motor Inverter Half-Bridge |
|---|---|
Use Scenario: High-efficiency 24 V input to 5/12 V output step-down converter in industrial PLC power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–500 kHz with precise dead-time control. Use Value: 2.1 mΩ RDS(on) at 4.5 V enables >95% efficiency at 40 A load without external gate boosting. | Use Scenario: Low-voltage brushless DC motor drive in cordless power tools with 18–36 V battery packs. IC Role / Device Role / Timing Role: High-side or low-side switching element in three-phase inverter leg, commutated at ≤20 kHz. Use Value: 260 A pulsed current rating supports 3× motor stall current without SOA violation during dynamic load changes. |
| Automotive Body Control Module | Server VRM High-Current Phase |
Use Scenario: Load switching for headlights, HVAC blowers, and solenoid actuators in 12 V vehicle electrical architecture. IC Role / Device Role / Timing Role: Single-ended high-side or low-side power switch controlled by microcontroller GPIO with integrated protection. Use Value: ±20 V VGSS rating and –55 °C to +150 °C Tstg ensure robustness against load-dump transients and under-hood thermal stress. | Use Scenario: Multiphase buck converter phase leg in AI accelerator server VRMs delivering >300 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Primary current-handling switch in interleaved topology, synchronized to 1 MHz PWM controller. Use Value: 2.08 °C/W θch-c allows 60 W dissipation with minimal heatsink, supporting high-power density board layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ @ 10 V; higher Qg (71 nC); TO-220AB package. | Larger footprint and lower thermal performance; requires heatsink for >30 A continuous. | Select when legacy through-hole assembly or higher avalanche ruggedness (EAS = 190 mJ) is prioritized over board space. |
| SiR872DP-T1-GE3 | RDS(on) = 1.9 mΩ @ 10 V; 8-Lead PowerPAK SO-8; Qg = 52 nC. | Smaller thermal resistance (1.5 °C/W) but lower ID rating (60 A); not rated for 260 A pulse. | Select when tighter layout constraints exist and peak current demand stays below 200 A. |
Compared with IRL3803PBF and SiR872DP-T1-GE3, the RJK0390DPA-00#J53 uniquely balances 65 A DC current, 260 A pulse capability, and 2.2 mΩ on-resistance in a thermally optimized WPAK(3F) package-making it optimal for high-power density, high-reliability 24–36 V switching applications where both conduction and switching losses must be minimized.
Availability
RJK0390DPA-00#J53 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor inverters, and automotive body control modules requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.
Supply support for RJK0390DPA-00#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0390DPA-00#J53 belongs to Renesas' WPAK-series high-current power MOSFET product line, engineered for high-efficiency, high-density power conversion in space-constrained 24–36 V systems.
FAQ
What is the maximum continuous drain current rating for RJK0390DPA-00#J53 at 25°C case temperature?
The RJK0390DPA-00#J53 has a maximum continuous drain current (ID) rating of 65 A at Tc = 25°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is derated linearly above 25°C per the Power vs. Temperature Derating curve on page 3 of the datasheet.
Does RJK0390DPA-00#J53 support logic-level gate drive, and what is its RDS(on) at 4.5 V?
Yes, the RJK0390DPA-00#J53 is explicitly rated for 4.5 V gate drive capability. Its static drain-to-source on-state resistance is 2.1–2.9 mΩ at ID = 32.5 A and VGS = 4.5 V (pulse test), enabling full enhancement with standard 5 V or 3.3 V microcontroller outputs without level-shifting circuitry.
What is the thermal resistance from channel to case (θch-c) for RJK0390DPA-00#J53, and how does it impact heatsinking?
The RJK0390DPA-00#J53 has a channel-to-case thermal impedance (θch-c) of 2.08 °C/W at Tc = 25°C. This value defines the temperature rise across the internal die-to-package interface and directly determines the required external thermal resistance (e.g., heatsink + interface material) to maintain Tch ≤ 150°C under given power dissipation.
Can RJK0390DPA-00#J53 be used in avalanche mode, and what are its rated avalanche parameters?
Yes, the RJK0390DPA-00#J53 is rated for repetitive avalanche operation with IAP = 30 A and EAR = 90 mJ at Tch = 25°C (Rg ≥ 50 Ω). These values are validated per the avalanche test circuit on page 5 and define safe single-pulse energy limits-not continuous operation-and require careful gate resistor selection to avoid secondary breakdown.
What is the gate-to-source threshold voltage range (VGS(off)) for RJK0390DPA-00#J53, and why does it matter for drive design?
The gate-to-source cutoff voltage (VGS(off)) for RJK0390DPA-00#J53 is specified as 1.2–2.5 V at VDS = 10 V and ID = 1 mA. This range confirms strong enhancement-mode behavior and ensures reliable turn-off with gate voltages ≤ 0.5 V, reducing risk of unintended conduction due to noise coupling in high-dv/dt environments.
RJK0390DPA-00#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 65A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 8900 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WPAK
RJK0390DPA-00#J53 FAQ
1.How can I place an order for RJK0390DPA-00#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0390DPA-00#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0390DPA-00#J53 reliable?
The price and inventory of RJK0390DPA-00#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0390DPA-00#J53 is usually 5 days.
3.What payment methods are accepted for RJK0390DPA-00#J53?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0390DPA-00#J53 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0390DPA-00#J53?
RJK0390DPA-00#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0390DPA-00#J53 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0390DPA-00#J53?
For technical support, including RJK0390DPA-00#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0390DPA-00#J53 requirements.
6.How does Aetrix verify that RJK0390DPA-00#J53 is sourced from the original manufacturer or authorized distributors?
All RJK0390DPA-00#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0390DPA-00#J53 meets industry standards.
7.What is the process for return or replacement of RJK0390DPA-00#J53?
All RJK0390DPA-00#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0390DPA-00#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0390DPA-00#J53 part is unused and in its original packaging.
Return procedure for RJK0390DPA-00#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RJK0390DPA-00#J53 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
