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Renesas RJK0390DPA-00#J5A

Part No.:
RJK0390DPA-00#J5A
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
8-WFDFN Exposed Pad
Datasheet:
AetrixRJK0390DPA-00#J5A.pdf
Description:
MOSFET N-CH 30V 65A 8WPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

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Product details

Overview

RJK0390DPA-00#J5A from Renesas Electronics is a 30V, 65A N-channel power MOSFET in WPAK(3F) package with 2.2 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drive half-bridges, and capable of direct 4.5 V gate drive.

For engineers reviewing the RJK0390DPA-00#J5A datasheet, RJK0390DPA-00#J5A pinout, RJK0390DPA-00#J5A application, or RJK0390DPA-00#J5A equivalent, key selection criteria include its low 2.1 mΩ RDS(on) at 4.5 V gate drive, 54 nC total gate charge, and 260 A drain peak current capability under pulsed conditions.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in synchronous rectification and high-frequency buck converter topologies. Its 8900 pF input capacitance and 570 pF reverse transfer capacitance support stable gate control with moderate gate resistance (0.80 Ω typical).

The device integrates a robust body diode with 45 ns reverse recovery time and 0.79–1.03 V forward voltage at 65 A, enabling efficient freewheeling in hard-switched H-bridge configurations without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - maximum blocking voltage for 12 V and 24 V bus applications
RDS(on) @ 10 V2.2 mΩ max - enables ≤1.4 W conduction loss at 65 A continuous
RDS(on) @ 4.5 V2.9 mΩ max - supports logic-level gate drive from 3.3 V/5 V controllers
Qg54 nC - determines gate driver power requirement and switching speed trade-off
td(off)92 ns - defines minimum dead-time setting to prevent shoot-through
ID(pulse)260 A - supports short-circuit withstand in motor phase-leg protection
EAR90 mJ - specifies single-pulse avalanche energy handling capability

Pinout & Package

Package: WPAK(3F), Renesas code PWSN0008DE-A - thermally enhanced surface-mount package with exposed drain pad, 4.90 mm × 3.92 mm footprint, 1.27 mm height, and 0.075 g mass.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3SourceLow-side reference node; electrically tied to PCB ground plane via thermal pad
4GateControl input requiring <2.5 V threshold and 54 nC charge for full enhancement
5, 6, 7, 8DrainMain power output node; connected to internal die backside and thermal pad for heat dissipation

Key Features

FeatureDesign Value
4.5 V gate drive compatibilityEnables direct interface with standard logic-level PWM controllers without level-shifting
2.2 mΩ RDS(on) @ 10 VReduces conduction loss by >35% versus comparable 30 V MOSFETs in 65 A applications
8900 pF CissSupports stable gate drive with 4.7 Ω series resistor and 10 V supply
0.79 V VDF @ 65 ALowers freewheeling loss in synchronous rectifier mode vs. discrete Schottky solutions
Pb-free & halogen-freeMeets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow compliance

Applications

DC-DC Converter Primary SwitchBLDC Motor Phase Leg

Use Scenario: High-efficiency 24 V input, 5–12 V output buck converter in industrial PLC power supplies.

IC Role / Device Role / Timing Role: High-side switching element operating at 300–500 kHz with synchronous rectification.

Use Value: 2.2 mΩ RDS(on) limits I²R loss to ≤0.93 W at 65 A, enabling >95% efficiency at full load.

Use Scenario: 3-phase inverter driving 200–500 W brushless DC motors in HVAC blowers and pump systems.

IC Role / Device Role / Timing Role: Low-side switch in each half-bridge leg, commutated at ≤20 kHz with 92 ns turn-off delay.

Use Value: 45 ns body diode trr minimizes cross-conduction loss during dead-time, improving thermal margin.

Automotive Body Control ModuleServer VRM High-Current Phase

Use Scenario: Load switching for headlight LED drivers and solenoid actuators in 12 V automotive BCMs.

IC Role / Device Role / Timing Role: High-current load switch controlled by 3.3 V microcontroller GPIO with integrated overcurrent protection.

Use Value: 2.9 mΩ RDS(on) at 4.5 V ensures full enhancement using MCU's native I/O voltage, eliminating external level shifters.

Use Scenario: Single-phase segment of multiphase VRM supplying CPU core voltage in enterprise servers.

IC Role / Device Role / Timing Role: Power stage switch operating at 1 MHz with 54 nC Qg and 10.8 ns rise time.

Use Value: Low 0.80 Ω gate resistance and 570 pF Crss enable clean 1 MHz switching with minimal EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3803PBFRDS(on) = 3.0 mΩ @ 4.5 V; Qg = 60 nC; TO-220AB packageRequires through-hole mounting and larger heatsink due to higher thermal impedance (1.5°C/W case-to-ambient)Prefer RJK0390DPA-00#J5A for space-constrained SMT designs needing lower RDS(on) and better thermal performance.
SiR872DP-T1-GE3RDS(on) = 2.3 mΩ @ 4.5 V; Qg = 52 nC; PowerPAK SO-8L packageSmaller 5 mm × 6 mm footprint but lower 50 A ID rating and no avalanche rating specifiedChoose RJK0390DPA-00#J5A when 65 A continuous current, 90 mJ avalanche energy, or WPAK thermal performance are required.

Compared with IRL3803PBF and SiR872DP-T1-GE3, the RJK0390DPA-00#J5A delivers superior current density (65 A in 4.9×3.9 mm), guaranteed avalanche ruggedness, and lower on-resistance at 4.5 V-making it optimal for high-reliability, high-power-density SMT power stages.

Availability

RJK0390DPA-00#J5A is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and automotive body control modules requiring stable component supply and lead-free compliance.

Supply support for RJK0390DPA-00#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Japan, specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The RJK0390DPA-00#J5A belongs to Renesas' WPAK-series power MOSFET product line, engineered for high-current, high-frequency switching in compact SMT power conversion and motor control applications.

FAQ

What is the maximum continuous drain current rating for RJK0390DPA-00#J5A?

The RJK0390DPA-00#J5A has a maximum continuous drain current (ID) rating of 65 A at Tc = 25°C. This rating assumes proper PCB copper area and thermal management per the WPAK(3F) package derating curve; at 75°C case temperature, the usable current drops to approximately 45 A based on the published power vs. temperature graph.

Does RJK0390DPA-00#J5A support logic-level gate drive?

Yes, the RJK0390DPA-00#J5A is fully compatible with logic-level gate drive: its gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, and it achieves 2.9 mΩ RDS(on) max at VGS = 4.5 V-enabling direct drive from 3.3 V or 5 V microcontrollers without external level shifting.

What is the avalanche energy rating of RJK0390DPA-00#J5A?

The RJK0390DPA-00#J5A is rated for 90 mJ of single-pulse avalanche energy (EAR) at Tch = 25°C with Rg ≥ 50 Ω. This specification confirms ruggedness against inductive switching transients in motor drive and relay-driving applications where voltage spikes exceed VDSS.

How does the body diode performance of RJK0390DPA-00#J5A compare to external Schottky diodes?

The RJK0390DPA-00#J5A features an integrated body diode with 45 ns reverse recovery time and 0.79–1.03 V forward voltage at 65 A. While discrete Schottky diodes offer lower VF, this MOSFET's diode enables synchronous rectification with zero reverse recovery loss-reducing EMI and improving efficiency in high-frequency buck converters where RJK0390DPA-00#J5A is used.

Is RJK0390DPA-00#J5A compliant with environmental regulations?

Yes, the RJK0390DPA-00#J5A is Pb-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The device uses Sn plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) standards for reflow soldering, as confirmed in the official Renesas preliminary datasheet R07DS0922EJ0300 Rev.3.00.

RJK0390DPA-00#J5A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-WFDFN Exposed Pad
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
65A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 4.5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
8900 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
60W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-WPAK

RJK0390DPA-00#J5A FAQ

1.How can I place an order for RJK0390DPA-00#J5A through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0390DPA-00#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0390DPA-00#J5A reliable?

The price and inventory of RJK0390DPA-00#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0390DPA-00#J5A is usually 5 days.

3.What payment methods are accepted for RJK0390DPA-00#J5A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0390DPA-00#J5A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0390DPA-00#J5A?

RJK0390DPA-00#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0390DPA-00#J5A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0390DPA-00#J5A?

For technical support, including RJK0390DPA-00#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0390DPA-00#J5A requirements.

6.How does Aetrix verify that RJK0390DPA-00#J5A is sourced from the original manufacturer or authorized distributors?

All RJK0390DPA-00#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0390DPA-00#J5A meets industry standards.

7.What is the process for return or replacement of RJK0390DPA-00#J5A?

All RJK0390DPA-00#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK0390DPA-00#J5A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0390DPA-00#J5A part is unused and in its original packaging.

Return procedure for RJK0390DPA-00#J5A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK0390DPA-00#J5A Tags

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