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Renesas RJK0390DPA-02#J5A
- Part No.:
- RJK0390DPA-02#J5A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK0390DPA-02#J5A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
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Inventory:339,000
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Product details
Overview
RJK0390DPA-02#J5A from Renesas Electronics is a 30V, 65A N-channel power MOSFET in WPAK(3F) package with 2.2 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drive half-bridges, and capable of direct 4.5 V gate drive.
For engineers reviewing the RJK0390DPA-02#J5A datasheet, RJK0390DPA-02#J5A pinout, RJK0390DPA-02#J5A application, or RJK0390DPA-02#J5A equivalent, this device is selected for low-conduction-loss, high-current synchronous rectification and high-frequency PWM control where thermal resistance (θch-c = 2.08 °C/W) and fast switching (td(off) = 92 ns) are critical.
Technical Context
This MOSFET uses a trench-gate silicon process optimized for low RDS(on) and minimized gate charge (Qg = 54 nC), enabling efficient operation at switching frequencies up to 1 MHz in buck converters and BLDC motor controllers. Its body diode exhibits trr = 45 ns and VDF = 0.79 V at IF = 65 A, supporting synchronous rectification without external Schottky replacement.
The device supports gate drive down to 4.5 V with guaranteed RDS(on) ≤ 2.9 mΩ, eliminating need for level-shifting in 5 V logic-controlled systems. Its WPAK(3F) package integrates three parallel source terminals and four parallel drain terminals to reduce parasitic inductance and improve current sharing in high-power layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V/24 V bus applications with margin against transients. |
| RDS(on) max | 2.2 mΩ at VGS = 10 V, ID = 32.5 A - Enables <1.5 W conduction loss at 65 A continuous drain current. |
| Qg | 54 nC - Low total gate charge reduces driver power requirement and enables fast turn-on/turn-off with standard gate drivers. |
| td(off) | 92 ns - Short turn-off delay supports >500 kHz PWM operation while maintaining dead-time control integrity. |
| θch-c | 2.08 °C/W - Enables 60 W channel dissipation at Tc = 25 °C, suitable for thermally constrained PCB layouts with minimal heatsinking. |
| ID | 65 A - Continuous drain current rating verified at Tc = 25 °C, derates to ~40 A at Tc = 100 °C per derating curve. |
| Ciss | 8900 pF - Input capacitance determines gate drive energy and Miller effect sensitivity in hard-switched topologies. |
Pinout & Package
Package: WPAK(3F), Renesas code PWSN0008DE-A - surface-mount, copper-clip package with exposed drain pad for low thermal resistance and high-current capability. Dimensions: 5.9 mm × 4.9 mm × 1.27 mm (L × W × H), mass 0.075 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Three parallel low-inductance source connections; tied internally to channel substrate and used for return path and gate reference. |
| 4 | Gate | Single gate input terminal; requires ≤ ±20 V drive; low Rg = 0.80 Ω minimizes ringing in high-dI/dt switching. |
| 5, 6, 7, 8 | Drain | Four parallel drain terminals connected to exposed copper pad; carry full load current and serve as primary thermal path to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V drive | RDS(on) ≤ 2.9 mΩ enables use with 5 V microcontrollers without gate boosting, reducing BOM count. |
| High-current source/drain layout | Three-source/four-drain terminal configuration lowers package loop inductance (<1.5 nH estimated), suppressing voltage overshoot during turn-off. |
| Fast body diode recovery | trr = 45 ns and Qrr ≈ 2.5 nC (derived from trr and diF/dt) minimize reverse recovery losses in synchronous rectifier mode. |
| Pb-free and halogen-free construction | Complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS Directive 2011/65/EU without derating. |
| Avalanche-rated | Rated for repetitive avalanche energy EAR = 90 mJ at Tch = 25 °C, supporting inductive load switching without external snubbers. |
Applications
| DC-DC Synchronous Buck Converter | BLDC Motor Phase Switch |
|---|---|
Use Scenario: High-efficiency 12 V input to 1.2 V/60 A output VRM for FPGA or ASIC power delivery. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 600–800 kHz PWM frequency with tight dead-time control. Use Value: 2.2 mΩ RDS(on) limits conduction loss to <0.8 W at 60 A, while 54 nC Qg ensures clean 10 ns rise time with 1 Ω gate resistor. |
Use Scenario: 24 V battery-powered 3-phase BLDC driver for e-bike controller delivering 500 W mechanical output. IC Role / Device Role / Timing Role: High-current phase-leg switch handling 65 A peak phase current with bidirectional body-diode conduction during PWM decay. Use Value: 45 ns trr and 0.79 V VDF reduce freewheeling losses by >30% vs. discrete Schottky solutions; WPAK thermal performance sustains 105 °C case temperature. |
| Hot-Swap OR'ing Circuit | Industrial 24 V Power Distribution Switch |
Use Scenario: Redundant 24 V supply OR'ing in telecom shelf with inrush current limiting and fault isolation. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss forward conduction and reverse blocking. Use Value: 30 V VDSS provides 2× margin over 24 V nominal; 2.2 mΩ RDS(on) yields <15 mV drop at 7 A, minimizing voltage sag during switchover. |
Use Scenario: Programmable 24 V load switch for PLC I/O module with overcurrent protection and status reporting. IC Role / Device Role / Timing Role: Single high-side or low-side power switch controlled by microcontroller GPIO with fast enable/disable response. Use Value: 4.5 V gate threshold allows direct drive from 5 V logic; 65 A ID rating supports 30 A continuous load with 2× safety margin and thermal headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PbF | RDS(on) = 3.0 mΩ @ 10 V, Qg = 65 nC, TO-220AB package (θJA ≈ 40 °C/W vs. 2.08 °C/W for RJK0390DPA-02#J5A). | Higher thermal resistance requires larger heatsink; unsuitable for compact, high-power-density designs. | Choose when legacy TO-220 footprint is mandatory and board-level thermal management is available. |
| SiR872DP | RDS(on) = 2.0 mΩ @ 10 V, Qg = 58 nC, PowerPAK SO-8L package; no integrated multi-terminal drain/source structure. | Lower RDS(on) but higher package inductance; less robust under 65 A pulsed current due to single-drain configuration. | Prefer for cost-sensitive, medium-power applications where 65 A peak is not sustained and layout space permits larger gate resistor. |
Compared with IRL3803PbF and SiR872DP, RJK0390DPA-02#J5A delivers superior thermal performance via its WPAK(3F) clip-bond package and lower gate charge, making it optimal for high-current, high-frequency, space-constrained power stages where junction temperature control and switching efficiency are prioritized.
Availability
RJK0390DPA-02#J5A is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and industrial power distribution systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for RJK0390DPA-02#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for automotive, industrial, and infrastructure markets.
RJK0390DPA-02#J5A belongs to Renesas' WPAK-series power MOSFET product line, engineered for high-current, high-efficiency switching in space-constrained power conversion systems where thermal performance and gate-drive simplicity are essential.
FAQ
What is the maximum continuous drain current rating for RJK0390DPA-02#J5A?
The RJK0390DPA-02#J5A is rated for 65 A continuous drain current (ID) at case temperature Tc = 25 °C. This rating decreases with rising case temperature per the derating curve on page 3 of the datasheet; at Tc = 100 °C, the usable ID drops to approximately 40 A. The device also supports 260 A pulsed drain current (ID(pulse)) for PW ≤ 10 μs and duty cycle ≤ 1%.
Can RJK0390DPA-02#J5A be driven directly from a 5 V microcontroller GPIO?
Yes, RJK0390DPA-02#J5A is specifically characterized for 4.5 V gate drive, with RDS(on) guaranteed ≤ 2.9 mΩ at VGS = 4.5 V and ID = 32.5 A. Its gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, ensuring reliable enhancement-mode turn-on with standard 5 V logic. No level shifter or gate driver IC is required for basic switching.
What is the thermal resistance from channel to case (θch-c) for RJK0390DPA-02#J5A?
The RJK0390DPA-02#J5A has a channel-to-case thermal impedance (θch-c) of 2.08 °C/W, measured under Tc = 25 °C conditions. This low value reflects the WPAK(3F) package's copper-clip construction and large exposed drain pad, enabling efficient heat transfer from the die directly into the PCB copper plane without requiring an external heatsink in many applications.
Does RJK0390DPA-02#J5A include avalanche energy rating?
Yes, RJK0390DPA-02#J5A is rated for repetitive avalanche energy (EAR) of 90 mJ at channel temperature Tch = 25 °C, with test conditions specifying Rg ≥ 50 Ω. This rating confirms its ability to withstand inductive switching stress without failure, supporting robust operation in motor drive and relay-driving applications where unclamped inductive kickback may occur.
What is the body diode forward voltage (VDF) of RJK0390DPA-02#J5A under rated current?
The body-drain diode forward voltage (VDF) of RJK0390DPA-02#J5A is specified as 0.79 V (typical) and 1.03 V (max) at IF = 65 A and VGS = 0 V. This low VDF, combined with trr = 45 ns, makes the device suitable for synchronous rectification and freewheeling paths where diode conduction is unavoidable during PWM dead time.
RJK0390DPA-02#J5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK0390DPA-02#J5A FAQ
1.How can I place an order for RJK0390DPA-02#J5A through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0390DPA-02#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0390DPA-02#J5A reliable?
The price and inventory of RJK0390DPA-02#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0390DPA-02#J5A is usually 5 days.
3.What payment methods are accepted for RJK0390DPA-02#J5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0390DPA-02#J5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0390DPA-02#J5A?
RJK0390DPA-02#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0390DPA-02#J5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0390DPA-02#J5A?
For technical support, including RJK0390DPA-02#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0390DPA-02#J5A requirements.
6.How does Aetrix verify that RJK0390DPA-02#J5A is sourced from the original manufacturer or authorized distributors?
All RJK0390DPA-02#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0390DPA-02#J5A meets industry standards.
7.What is the process for return or replacement of RJK0390DPA-02#J5A?
All RJK0390DPA-02#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK0390DPA-02#J5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0390DPA-02#J5A part is unused and in its original packaging.
Return procedure for RJK0390DPA-02#J5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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