Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas RJK0393DPA-00#J53

Part No.:
RJK0393DPA-00#J53
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
8-PowerWDFN
Datasheet:
AetrixRJK0393DPA-00#J53.pdf
Description:
MOSFET N-CH 30V 40A 8WPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:29,700

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

RJK0393DPA-00#J53 from Renesas is a silicon N-channel power MOSFET designed for high-efficiency DC-DC converters and synchronous rectification in server VRMs and POL modules. It delivers 3.3 mΩ typical RDS(on) at VGS = 10 V, supports 4.5 V gate drive, and handles 40 A continuous drain current with 30 V VDSS.

For engineers reviewing the RJK0393DPA-00#J53 datasheet, RJK0393DPA-00#J53 pinout, RJK0393DPA-00#J53 application, or RJK0393DPA-00#J53 equivalent, key selection criteria include low on-resistance at 4.5 V drive, fast switching (13.2 ns td(on), 7.1 ns tf), and WPAK package thermal performance (θch–C = 3.13 °C/W).

Technical Context

This MOSFET operates as a high-side or low-side synchronous rectifier switch in buck converters and point-of-load regulators. Its 30 V VDSS, ±20 V VGSS, and 160 A peak drain current rating support robust operation under transient load conditions.

The device features integrated body diode with 0.83 V typical forward voltage and 23.5 ns reverse recovery time, enabling efficient freewheeling in hard-switched topologies. Gate charge parameters (Qg = 21 nC, Qgd = 4.7 nC) are optimized for high-frequency PWM control up to 1 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - Maximum blocking voltage for 12 V input rail systems with margin
RDS(on) @ 10 V3.3 mΩ typ. - Enables <1.3 W conduction loss at 20 A in high-current POL stages
RDS(on) @ 4.5 V4.2 mΩ typ. - Ensures stable on-state performance with logic-level gate drivers
Qg21 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength
tr/tf6.0 ns / 7.1 ns - Minimizes switching transition losses in high-frequency converters
θch–C3.13 °C/W - Allows 40 W channel dissipation at ≤100 °C case temperature
VGS(off)1.2–2.5 V - Ensures reliable turn-off margin against gate noise in noisy power environments

Pinout & Package

Package: WPAK (RENESAS code PWSN0008DA-A), surface-mount, thermally enhanced leadframe with exposed drain pad. Dimensions: 6.1 × 5.9 mm, 1.27 mm height, 0.075 g mass.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3SourceCommon source connection for internal parallel die; low-inductance return path
4GateSingle gate input terminal; requires <4.7 Ω series resistance for optimal ringing suppression
5, 6, 7, 8DrainMulti-terminal drain connection tied to exposed thermal pad; primary heat transfer path to PCB

Key Features

FeatureDesign Value
Low RDS(on) at 4.5 V4.2 mΩ typ. enables use with 3.3 V or 5 V microcontroller GPIOs without level-shifting
High-density mountingWPAK footprint occupies 35.5 mm² - 30% smaller than SO-8 for same current rating
Fast switching speed13.2 ns turn-on delay + 6.0 ns rise time reduces total switching loss to <150 µJ per cycle at 20 A
Robust avalanche capability25.6 mJ single-pulse energy rating allows safe operation during inductive load transients
Pb-free & halogen-freeComplies with JEDEC J-STD-020 moisture sensitivity level 2a (MSL2a) and RoHS/REACH

Applications

Server VRM High-Side SwitchPoint-of-Load Synchronous Rectifier

Use Scenario: Primary-side switch in multiphase 48 V-to-12 V intermediate bus converter for AI accelerators.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated gate driver IC with adaptive dead-time control.

Use Value: 3.3 mΩ RDS(on) cuts conduction loss by 35% vs. comparable 5 mΩ devices, improving full-load efficiency by 0.8%.

Use Scenario: Secondary-side synchronous rectifier in 12 V-to-1.8 V buck converter powering CPU core rails.

IC Role / Device Role / Timing Role: Low-side switch driven by controller's complementary output with precise timing alignment.

Use Value: 4.2 mΩ RDS(on) at 4.5 V ensures >92% efficiency at 40 A output while eliminating external Schottky diode.

Industrial PLC Power SupplyTelecom DC-DC Module

Use Scenario: Output switch in isolated 24 V input, 5 V/20 A regulated supply for programmable logic controllers.

IC Role / Device Role / Timing Role: Main pass element in secondary-side synchronous rectification stage.

Use Value: 23.5 ns trr prevents shoot-through during commutation, supporting 300 kHz fixed-frequency operation.

Use Scenario: Input-stage hot-swap FET and OR-ing diode replacement in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch used in redundant power path management.

Use Value: 160 A pulse rating and 150 °C Tch rating sustain short-circuit events per GR-1089-CORE requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3803PbFRDS(on) = 3.3 mΩ @ 10 V but only 5.0 mΩ @ 4.5 V; TO-220AB package; θJA = 62 °C/WLimited to lower-frequency (<200 kHz), non-compact designs due to larger thermal resistance and footprintSelect when board space is unconstrained and gate drive is ≥10 V; avoid for dense POL layouts.
SiR872DP-T1-GE3RDS(on) = 3.0 mΩ @ 10 V, 4.0 mΩ @ 4.5 V; PowerPAK SO-8; Qg = 24 nC; higher Ciss (3700 pF)Suitable for same frequency range but exhibits 15% higher gate drive loss and reduced EMI margin due to higher CrssPrefer for cost-sensitive volume production where minor efficiency trade-off is acceptable.

Compared with IRL3803PbF and SiR872DP-T1-GE3, RJK0393DPA-00#J53 delivers superior thermal performance (3.13 °C/W vs. >40 °C/W), tighter 4.5 V RDS(on) matching, and lower Crss-making it optimal for compact, high-frequency, high-reliability server and telecom power stages.

Availability

RJK0393DPA-00#J53 is available at Aetrix Electronics and suitable for server VRMs, point-of-load converters, and industrial PLC power supplies requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.

Supply support for RJK0393DPA-00#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and datacenter applications.

The RJK0393DPA-00#J53 belongs to Renesas' WPAK-series power MOSFET family, engineered specifically for high-current, high-efficiency synchronous rectification in next-generation server and AI infrastructure power delivery networks.

FAQ

What is the maximum continuous drain current rating for RJK0393DPA-00#J53?

The RJK0393DPA-00#J53 is rated for 40 A continuous drain current (ID) at Tc = 25 °C. Derating applies above 25 °C case temperature per the power vs. temperature curve; at 100 °C Tc, usable ID drops to approximately 25 A. This rating assumes proper PCB copper area for thermal conduction from the exposed drain pad.

Does RJK0393DPA-00#J53 support logic-level gate drive?

Yes, RJK0393DPA-00#J53 is fully characterized for 4.5 V gate drive, with RDS(on) = 4.2 mΩ typ. at ID = 20 A and VGS = 4.5 V. Its VGS(off) range (1.2–2.5 V) provides sufficient noise margin for direct interface with 3.3 V or 5 V controllers without level-shifting circuitry.

What is the thermal resistance from channel to case for RJK0393DPA-00#J53?

The channel-to-case thermal impedance (θch–C) of RJK0393DPA-00#J53 is 3.13 °C/W, measured under standard test conditions (Tc = 25 °C). This value reflects conduction through the exposed drain pad into the PCB thermal plane and is critical for calculating junction temperature in high-power applications.

Can RJK0393DPA-00#J53 be used in avalanche-prone circuits?

Yes, RJK0393DPA-00#J53 is rated for repetitive avalanche energy (EAR) of 25.6 mJ at Tch = 25 °C with Rg ≥ 50 Ω. Its 16 A avalanche current (IAP) rating supports safe operation during inductive switching transients, provided layout minimizes stray inductance and gate drive remains stable.

What package type does RJK0393DPA-00#J53 use and what are its key mechanical features?

RJK0393DPA-00#J53 uses the WPAK package (RENESAS code PWSN0008DA-A), a thermally enhanced surface-mount leadframe with an exposed drain pad. Key features include 6.1 × 5.9 mm footprint, 1.27 mm profile, Ni/Pd/Au plating, and MSL2a moisture sensitivity-optimized for automated reflow assembly and high-power density PCB layouts.

RJK0393DPA-00#J53 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-PowerWDFN
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 4.5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
3270 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-WPAK

RJK0393DPA-00#J53 FAQ

1.How can I place an order for RJK0393DPA-00#J53 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0393DPA-00#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0393DPA-00#J53 reliable?

The price and inventory of RJK0393DPA-00#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0393DPA-00#J53 is usually 5 days.

3.What payment methods are accepted for RJK0393DPA-00#J53?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0393DPA-00#J53 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0393DPA-00#J53?

RJK0393DPA-00#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0393DPA-00#J53 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0393DPA-00#J53?

For technical support, including RJK0393DPA-00#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0393DPA-00#J53 requirements.

6.How does Aetrix verify that RJK0393DPA-00#J53 is sourced from the original manufacturer or authorized distributors?

All RJK0393DPA-00#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0393DPA-00#J53 meets industry standards.

7.What is the process for return or replacement of RJK0393DPA-00#J53?

All RJK0393DPA-00#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0393DPA-00#J53, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0393DPA-00#J53 part is unused and in its original packaging.

Return procedure for RJK0393DPA-00#J53:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK0393DPA-00#J53 Tags

  • RJK0393DPA-00#J53
  • RJK0393DPA-00#J53 PDF
  • RJK0393DPA-00#J53 Datasheet
  • RJK0393DPA-00#J53 Specifications
  • RJK0393DPA-00#J53 Images
  • Renesas
  • Renesas RJK0393DPA-00#J53
  • Buy RJK0393DPA-00#J53
  • RJK0393DPA-00#J53 Price
  • RJK0393DPA-00#J53 Distributor
  • RJK0393DPA-00#J53 Supplier
  • RJK0393DPA-00#J53 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER