Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas RJK0393DPA-0G#J7A

Part No.:
RJK0393DPA-0G#J7A
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixRJK0393DPA-0G#J7A.pdf
Description:
POWER TRANSISTOR, MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

RJK0393DPA-0G#J7A from Renesas is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and motor drive switching, featuring RDS(on) = 3.3 mΩ (typ. at VGS = 10 V), 30 V VDSS, 40 A continuous drain current, and WPAK surface-mount package with integrated source-drain paralleling. It enables compact, low-loss power stages in automotive body control modules.

For engineers reviewing the RJK0393DPA-0G#J7A datasheet, RJK0393DPA-0G#J7A pinout, RJK0393DPA-0G#J7A application, or RJK0393DPA-0G#J7A equivalent, key selection criteria include gate-drive compatibility down to 4.5 V, avalanche energy rating of 25.6 mJ, thermal resistance θch–C = 3.13 °C/W, and body-diode reverse recovery time of 23.5 ns.

Technical Context

This MOSFET employs a trench-gate process optimized for low conduction loss and fast switching in synchronous buck converters and H-bridge motor drivers. Its gate charge profile (Qg = 21 nC, Qgd = 4.7 nC) supports efficient 100 kHz–1 MHz operation with minimal Miller-induced shoot-through risk.

The device integrates three parallel source terminals and four parallel drain terminals in a single WPAK leadframe, enabling high-current routing while maintaining low-inductance layout. Its body diode exhibits VDF = 0.83 V (typ. at IF = 40 A) and trr = 23.5 ns under dIF/dt = 100 A/µs conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - Maximum blocking voltage compatible with 24 V automotive systems and 12 V industrial rails.
RDS(on) @ VGS = 10 V3.3 mΩ typ. - Enables ≤1.32 W conduction loss at 20 A, reducing heatsink requirements.
RDS(on) @ VGS = 4.5 V4.2 mΩ typ. - Ensures full enhancement with standard logic-level microcontroller GPIOs.
Qg21 nC - Supports efficient 1 MHz switching with <1.5 W gate driver power at 10 V drive.
tr/tf6.0 ns / 7.1 ns - Minimizes switching transition losses in hard-switched topologies.
θch–C3.13 °C/W - Allows 40 W channel dissipation with ≤125 °C case temperature rise.
EAR25.6 mJ - Withstands repetitive inductive turn-off surges up to 16 A without degradation.

Pinout & Package

Package: WPAK (RENESAS code PWSN0008DA-A), 8-pin surface-mount leadframe with exposed drain pad, 6.1 mm × 4.9 mm footprint, 0.8 mm max height, Ni/Pd/Au plating.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3SourceThree parallel low-inductance source connections tied to PCB ground plane for return current path integrity.
4GateSingle gate input with Rg = 1.4 Ω - requires external series resistor ≥4.7 Ω for controlled turn-on/turn-off.
5, 6, 7, 8DrainFour parallel drain terminals connected to internal die-pad - routed to high-side power rail or switch node.

Key Features

FeatureDesign Value
Low RDS(on) at 4.5 V drive4.2 mΩ typ. - eliminates need for gate boosters in 3.3 V/5 V control systems.
High-density mountingWPAK package with 6.1 mm × 4.9 mm footprint - saves >40% board area vs. SO-8 equivalents.
Fast switching with low Qgd/Qg ratioQgd/Qg = 22% - reduces Miller plateau duration and improves noise immunity during transitions.
Pb-free and halogen-free constructionComplies with J-STD-609 Class 3 moisture sensitivity and RoHS Directive 2011/65/EU Annex II.

Applications

Automotive Body Control Unit (BCU)Industrial BLDC Motor Driver

Use Scenario: Driving 12 V solenoid valves and LED lighting loads in door modules and seat controls.

IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing via RDS(on) monitoring.

Use Value: 3.3 mΩ RDS(on) limits power loss to <1.5 W at 20 A, enabling convection-cooled design without heatsinks.

Use Scenario: Low-side switching in 24 V three-phase inverter stages for fans and pumps.

IC Role / Device Role / Timing Role: Synchronous rectifier in PWM-driven half-bridge leg with fast body-diode recovery.

Use Value: 23.5 ns trr minimizes cross-conduction loss during dead-time, improving efficiency by ≥1.2% at 20 kHz.

Server VRM High-Side SwitchTelecom DC-DC Converter

Use Scenario: Primary switch in 48 V–12 V intermediate bus converter for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Hard-switched high-side FET operating at 500 kHz with 10 V gate drive.

Use Value: 21 nC Qg enables <1.1 W gate drive loss at 500 kHz, supporting high-frequency operation without excessive driver heating.

Use Scenario: Output rectification in isolated 48 V–5 V flyback converter for base station control cards.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode.

Use Value: 0.83 V VDF and low Coss (430 pF) reduce forward and capacitive losses, increasing conversion efficiency by 2.8% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3803PbFRDS(on) = 3.3 mΩ @ 10 V but 6.0 mΩ @ 4.5 V; TO-220AB package; higher θJA (62 °C/W).Requires heatsink and larger PCB area; unsuitable for space-constrained automotive modules.Select when through-hole mounting and higher thermal mass are acceptable trade-offs for legacy design reuse.
STL220N3LLH6RDS(on) = 2.2 mΩ @ 10 V but only rated for 25 V VDSS; PowerFLAT 5x6 package; no integrated multi-source/drain terminals.Limited to 24 V systems; lacks parallel terminal structure for ultra-low-inductance layouts.Prefer for cost-sensitive 24 V applications where 30 V margin is unnecessary and layout inductance is less critical.

Compared with IRL3803PbF and STL220N3LLH6, the RJK0393DPA-0G#J7A uniquely combines 30 V rating, 4.5 V logic-level drive, WPAK's low-profile high-current routing, and 25.6 mJ avalanche capability-making it optimal for next-generation automotive and industrial power stages demanding reliability, density, and robustness.

Availability

RJK0393DPA-0G#J7A is available at Aetrix Electronics and suitable for automotive body control units, industrial BLDC motor drives, and telecom DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for RJK0393DPA-0G#J7A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The RJK0393DPA-0G#J7A belongs to Renesas' WPAK-series power MOSFET product line, engineered specifically for high-current, high-reliability switching in space-constrained automotive and industrial power systems.

FAQ

What is the maximum continuous drain current rating for RJK0393DPA-0G#J7A?

The RJK0393DPA-0G#J7A has a maximum continuous drain current (ID) of 40 A at Tc = 25 °C, derating linearly to zero at Tc = 150 °C per the 3.13 °C/W thermal resistance. This rating assumes proper PCB copper area for heat spreading and is validated under pulse test conditions with Tc measurement at the package center.

Does RJK0393DPA-0G#J7A support logic-level gate drive?

Yes, the RJK0393DPA-0G#J7A is fully enhanced at VGS = 4.5 V, delivering RDS(on) = 4.2 mΩ (typ.) at ID = 20 A. Its gate threshold voltage range (VGS(off) = 1.2–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs without level-shifting circuitry.

What is the avalanche energy rating of RJK0393DPA-0G#J7A and how is it tested?

The RJK0393DPA-0G#J7A is rated for 25.6 mJ of repetitive avalanche energy (EAR) at Tch = 25 °C with Rg ≥ 50 Ω. Testing follows the standard inductive avalanche circuit per JEDEC JESD24-11, using VDD = 15 V, L = 0.1 mH, and IAP = 16 A, with duty cycle < 0.1% to prevent thermal runaway.

How does the WPAK package of RJK0393DPA-0G#J7A improve thermal performance compared to SO-8?

The WPAK package of RJK0393DPA-0G#J7A achieves θch–C = 3.13 °C/W - over 3× better than typical SO-8 MOSFETs (~10–12 °C/W) - due to its exposed drain pad directly soldered to large PCB copper areas and optimized internal leadframe geometry. This allows RJK0393DPA-0G#J7A to dissipate 40 W with only 125 °C temperature rise above case.

Can RJK0393DPA-0G#J7A be used in synchronous rectification applications?

Yes, the RJK0393DPA-0G#J7A is suitable for synchronous rectification due to its low VDF = 0.83 V (typ. at IF = 40 A), fast trr = 23.5 ns, and low Coss = 430 pF. These characteristics reduce both forward conduction loss and reverse recovery loss versus Schottky diodes, especially in 12–48 V output converters operating above 200 kHz.

RJK0393DPA-0G#J7A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RJK0393DPA-0G#J7A FAQ

1.How can I place an order for RJK0393DPA-0G#J7A through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0393DPA-0G#J7A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0393DPA-0G#J7A reliable?

The price and inventory of RJK0393DPA-0G#J7A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0393DPA-0G#J7A is usually 5 days.

3.What payment methods are accepted for RJK0393DPA-0G#J7A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0393DPA-0G#J7A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0393DPA-0G#J7A?

RJK0393DPA-0G#J7A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0393DPA-0G#J7A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0393DPA-0G#J7A?

For technical support, including RJK0393DPA-0G#J7A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0393DPA-0G#J7A requirements.

6.How does Aetrix verify that RJK0393DPA-0G#J7A is sourced from the original manufacturer or authorized distributors?

All RJK0393DPA-0G#J7A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0393DPA-0G#J7A meets industry standards.

7.What is the process for return or replacement of RJK0393DPA-0G#J7A?

All RJK0393DPA-0G#J7A units undergo pre-shipment inspection (PSI). If there is an issue with RJK0393DPA-0G#J7A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0393DPA-0G#J7A part is unused and in its original packaging.

Return procedure for RJK0393DPA-0G#J7A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK0393DPA-0G#J7A Tags

  • RJK0393DPA-0G#J7A
  • RJK0393DPA-0G#J7A PDF
  • RJK0393DPA-0G#J7A Datasheet
  • RJK0393DPA-0G#J7A Specifications
  • RJK0393DPA-0G#J7A Images
  • Renesas
  • Renesas RJK0393DPA-0G#J7A
  • Buy RJK0393DPA-0G#J7A
  • RJK0393DPA-0G#J7A Price
  • RJK0393DPA-0G#J7A Distributor
  • RJK0393DPA-0G#J7A Supplier
  • RJK0393DPA-0G#J7A Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER