Renesas RJK03C0DPA-00#J53
- Part No.:
- RJK03C0DPA-00#J53
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
RJK03C0DPA-00#J53.pdf
- Description:
- MOSFET N-CH 30V 70A 8WPAK
- Quantity:
- Payment:

- Shipping:

Inventory:372,000
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Product details
Overview
RJK03C0DPA-00#J53 from Renesas Electronics is a 30V, 70A N-channel power MOSFET in WPAK(3F) package with 2.0 mΩ max RDS(on) at VGS = 10 V, rated for high-speed switching in DC-DC converters and motor drive half-bridges where low conduction loss and fast turn-on/turn-off are critical.
For engineers reviewing the RJK03C0DPA-00#J53 datasheet, RJK03C0DPA-00#J53 pinout, RJK03C0DPA-00#J53 application, or RJK03C0DPA-00#J53 equivalent, key selection criteria include gate threshold voltage (1.2–2.5 V), avalanche energy rating (122 mJ), body diode reverse recovery time (53 ns), and thermal impedance (1.93 °C/W).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(on) and high current density in a thermally enhanced surface-mount package. Its 4.5 V gate drive capability enables direct compatibility with 5 V logic controllers without level-shifting.
Designed for synchronous rectification and high-frequency PWM switching, it features low gate charge (Qg = 66 nC), fast switching times (td(on) = 28 ns, tf = 40 ns), and robust avalanche ruggedness (IAP = 35 A, EAR = 122 mJ) under repetitive stress conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche breakdown; sets upper limit for bus voltage in 24 V systems. |
| RDS(on) max | 2.0 mΩ at VGS = 10 V, ID = 35 A - Enables <1.5 W conduction loss at 70 A continuous drain current with proper heatsinking. |
| Qg | 66 nC - Determines gate driver power requirement and switching loss; compatible with standard 1 A peak drivers. |
| tr/tf | 14.2 ns / 40 ns - Supports >1 MHz switching in hard-switched topologies while limiting EMI generation. |
| EAR | 122 mJ - Specifies single-pulse avalanche energy handling; allows safe operation during inductive load turn-off transients. |
| θch-c | 1.93 °C/W - Thermal resistance from channel to case; requires minimum 10 cm² copper pour for 65 W continuous dissipation. |
| VGS(th) | 1.2–2.5 V - Gate threshold range ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs. |
Pinout & Package
Package: WPAK(3F), Renesas code PWSN0008DE-A - thermally enhanced 8-pin surface-mount package with exposed drain pad for low-impedance heat transfer to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel cells; tied to PCB ground plane for low-inductance return path. |
| 4 | Gate | Control input requiring ≤0.5 µA leakage; driven by logic-level signal with series resistor to damp ringing. |
| 5, 6, 7, 8 | Drain | High-current output node connected to internal die backside; soldered directly to large copper area for thermal and electrical performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 2.5 mΩ max - enables full 70 A current handling with standard 5 V gate drivers, eliminating need for external level shifters. |
| Fast switching with low Qgd | Qgd = 13.7 nC - reduces Miller plateau duration and improves immunity to dv/dt-induced false turn-on in bridge configurations. |
| Robust body diode | VDF = 0.80–1.04 V at 70 A - supports synchronous rectification and freewheeling with minimal forward loss and 53 ns reverse recovery. |
| Pb-free & halogen-free | Complies with JEDEC J-STD-020 and RoHS Directive 2011/65/EU - suitable for consumer, industrial, and automotive applications requiring green manufacturing. |
| Thermal enhancement | Exposed drain pad + low θch-c = 1.93 °C/W - delivers 65 W channel dissipation at Tc = 25 °C, enabling compact board-level thermal design. |
Applications
| DC-DC Buck Converter | BLDC Motor Inverter |
|---|---|
Use Scenario: High-efficiency 24 V input to 5 V/12 V output conversion in telecom power supplies and server VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–1000 kHz with precise dead-time control. Use Value: 2.0 mΩ RDS(on) reduces conduction loss by >40% vs. comparable 3.5 mΩ MOSFETs, improving full-load efficiency to >95%. | Use Scenario: Low-voltage (<30 V) brushless DC motor drives for drones, power tools, and HVAC blowers. IC Role / Device Role / Timing Role: High-side and low-side switching element in 3-phase inverter leg, commutated at 10–20 kHz. Use Value: 53 ns body diode trr and 40 ns fall time minimize shoot-through risk and reduce switching losses during PWM transitions. |
| Automotive Body Control Module | Industrial Solenoid Driver |
Use Scenario: Load switching for headlights, fans, and window lift motors in 12 V/24 V automotive subsystems. IC Role / Device Role / Timing Role: High-current power switch controlled by CAN/LIN microcontroller GPIO with integrated overcurrent protection. Use Value: 122 mJ avalanche energy rating withstands inductive kickback from 200 mH solenoids without external snubbers. | Use Scenario: Precision on/off control of pneumatic/hydraulic valves in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays, switched at 10–100 Hz with soft-start ramping. Use Value: 70 A continuous ID and 280 A pulse rating support 10× inrush current of 12 V/50 W solenoids without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ @ 10 V; higher Qg = 80 nC; TO-220AB package | Larger footprint and higher thermal resistance (θjc = 2.5 °C/W); less suitable for high-density layouts | Choose when legacy through-hole assembly or higher avalanche margin (EAS = 220 mJ) is prioritized over board space. |
| SiR872DP-T1-GE3 | RDS(on) = 1.9 mΩ @ 10 V; same WPAK package; lower Qgd = 11.5 nC but no specified trr | Body diode recovery not characterized; may require external Schottky clamp in hard-commutated circuits | Prefer for highest efficiency in DC-DC converters where body diode conduction is minimized via synchronous control. |
Compared with IRL3803PBF and SiR872DP-T1-GE3, RJK03C0DPA-00#J53 uniquely balances low RDS(on), fast switching, characterized body diode recovery, and thermally optimized WPAK packaging-making it optimal for space-constrained, high-frequency motor and power supply designs requiring predictable avalanche behavior.
Availability
RJK03C0DPA-00#J53 is available at Aetrix Electronics and suitable for DC-DC buck converters, BLDC motor inverters, and automotive body control modules requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for RJK03C0DPA-00#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
RJK03C0DPA-00#J53 belongs to Renesas' Power MOSFET product line, engineered for high-current, high-efficiency switching in compact power stages where thermal performance and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for RJK03C0DPA-00#J53?
RJK03C0DPA-00#J53 is rated for 70 A continuous drain current at Tc = 25 °C with sufficient PCB copper area. Derating applies above 25 °C case temperature per the power vs. temperature curve on page 3 of the datasheet; at Tc = 100 °C, usable ID drops to approximately 35 A.
Does RJK03C0DPA-00#J53 support 3.3 V logic-level gate drive?
RJK03C0DPA-00#J53 has a gate threshold voltage range of 1.2–2.5 V, so it will turn on with 3.3 V gate drive. However, its RDS(on) is specified at 1.8–2.5 mΩ only at VGS = 4.5 V, meaning full 70 A capability requires ≥4.5 V. At 3.3 V, conduction loss increases significantly and must be verified in-system.
What is the thermal resistance from channel to case for RJK03C0DPA-00#J53?
The channel-to-case thermal impedance (θch-c) of RJK03C0DPA-00#J53 is 1.93 °C/W, measured under Tc = 25 °C conditions. This value assumes proper soldering of the exposed drain pad to ≥10 cm² of 2 oz copper, and is critical for calculating junction temperature rise in high-power applications.
Is RJK03C0DPA-00#J53 suitable for avalanche-prone circuits like inductive load switching?
Yes, RJK03C0DPA-00#J53 is fully rated for repetitive avalanche operation with IAP = 35 A and EAR = 122 mJ at Tch = 25 °C. Its avalanche ruggedness is validated per the test circuit on page 5, making it appropriate for solenoid, relay, and motor phase-leg switching where inductive energy must be safely clamped.
What package type does RJK03C0DPA-00#J53 use and what are its mounting requirements?
RJK03C0DPA-00#J53 uses the WPAK(3F) package (RENESAS code PWSN0008DE-A), an 8-pin surface-mount outline with an exposed drain pad. It requires reflow soldering per J-STD-020, minimum 10 cm² thermal copper on the drain pads, and strict control of solder paste volume to ensure void-free thermal interface and mechanical reliability.
RJK03C0DPA-00#J53 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 11000 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WPAK
RJK03C0DPA-00#J53 FAQ
1.How can I place an order for RJK03C0DPA-00#J53 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK03C0DPA-00#J53 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK03C0DPA-00#J53 reliable?
The price and inventory of RJK03C0DPA-00#J53 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03C0DPA-00#J53 is usually 5 days.
3.What payment methods are accepted for RJK03C0DPA-00#J53?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03C0DPA-00#J53 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK03C0DPA-00#J53?
RJK03C0DPA-00#J53 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK03C0DPA-00#J53 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK03C0DPA-00#J53?
For technical support, including RJK03C0DPA-00#J53 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03C0DPA-00#J53 requirements.
6.How does Aetrix verify that RJK03C0DPA-00#J53 is sourced from the original manufacturer or authorized distributors?
All RJK03C0DPA-00#J53 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03C0DPA-00#J53 meets industry standards.
7.What is the process for return or replacement of RJK03C0DPA-00#J53?
All RJK03C0DPA-00#J53 units undergo pre-shipment inspection (PSI). If there is an issue with RJK03C0DPA-00#J53, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK03C0DPA-00#J53 part is unused and in its original packaging.
Return procedure for RJK03C0DPA-00#J53:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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