Renesas RJK03C0DPA-WS#J53

Overview

RJK03C0DPA-WS#J53 from Renesas Electronics is a 30V, 70A N-channel power MOSFET in WPAK(3F) package with 2.0 mΩ max R_DS(on) at V_GS = 10 V, rated for high-speed switching in DC-DC converters and motor drive half-bridges where low conduction loss and fast turn-on/turn-off are critical.

For engineers reviewing the RJK03C0DPA-WS#J53 datasheet, RJK03C0DPA-WS#J53 pinout, RJK03C0DPA-WS#J53 application, or RJK03C0DPA-WS#J53 equivalent, key selection factors include gate threshold voltage (1.2–2.5 V), 4.5 V logic-level drivability, avalanche energy rating (122 mJ), body diode reverse recovery time (53 ns), and thermal resistance (1.93 °C/W).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and reduced gate charge (Q_g = 66 nC), enabling efficient operation in synchronous buck converters operating up to 1 MHz. Its 8-pin WPAK(3F) package integrates three parallel source terminals and four parallel drain terminals to minimize parasitic inductance and improve current sharing.

The device features a specified body-drain diode with V_DF = 0.80–1.04 V at I_F = 70 A and t_rr = 53 ns under dI_F/dt = 100 A/μs, supporting freewheeling in hard-switched topologies. Avalanche capability (I_AP = 35 A, E_AR = 122 mJ) is validated per JEDEC JESD24-11 with R_g ≥ 50 Ω.

Key Specifications

Pinout & Package

Package: WPAK(3F), 8-pin surface-mount, exposed drain pad, lead-free and halogen-free (RENESAS code PWSN0008DE-A). Dimensions: 5.9 mm × 4.9 mm × 1.27 mm, mass 0.075 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3803PbF and SiR872DP-T1-GE3, RJK03C0DPA-WS#J53 delivers superior 4.5 V drivability, higher avalanche energy margin, and lower gate charge-making it optimal for compact, high-frequency, logic-level-driven power stages where reliability under transient stress is critical.

Availability

RJK03C0DPA-WS#J53 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial power supplies requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for RJK03C0DPA-WS#J53 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The RJK03C0DPA-WS#J53 belongs to Renesas' WPAK-series logic-level power MOSFET product line, engineered for high-current, high-efficiency switching in space-constrained power conversion systems where low R_DS(on), fast switching, and robust avalanche behavior are essential.

FAQ

What is the maximum continuous drain current rating for RJK03C0DPA-WS#J53?

The RJK03C0DPA-WS#J53 is rated for 70 A continuous drain current (I_D) at T_c = 25 °C. This rating assumes proper PCB copper area for thermal conduction and is derated linearly with increasing case temperature-e.g., ~45 A at T_c = 100 °C per the power vs. temperature derating curve on page 3 of the datasheet. The device also supports 280 A pulsed current (I_D(pulse)) for ≤10 μs at 1% duty cycle.

Does RJK03C0DPA-WS#J53 support 4.5 V gate drive in production designs?

Yes, RJK03C0DPA-WS#J53 is explicitly characterized for 4.5 V gate drive: its R_DS(on) is guaranteed at 1.8–2.5 mΩ with I_D = 35 A and V_GS = 4.5 V (pulse test). This makes RJK03C0DPA-WS#J53 suitable for direct interfacing with 3.3 V or 5 V logic outputs without level-shifting or gate boosting, unlike many 30 V MOSFETs requiring ≥10 V for full enhancement.

What is the thermal resistance from channel to case for RJK03C0DPA-WS#J53?

The channel-to-case thermal impedance (θ_ch-c) of RJK03C0DPA-WS#J53 is 1.93 °C/W, measured under T_c = 25 °C conditions. This value reflects conduction through the exposed drain pad into the PCB copper pour and is critical for calculating junction temperature rise. For example, at 65 W channel dissipation, ΔT = 125.5 °C above case temperature-requiring careful thermal design to stay within the 150 °C absolute maximum channel temperature limit.

Is RJK03C0DPA-WS#J53 avalanche-rated, and what are the test conditions?

Yes, RJK03C0DPA-WS#J53 is avalanche-rated with I_AP = 35 A and E_AR = 122 mJ (single-pulse, T_ch = 25 °C, R_g ≥ 50 Ω). The avalanche test circuit and waveform are defined on page 5 of the datasheet, using an inductive load and controlled gate resistance to ensure repeatable stress. This rating validates robustness against inductive switching transients in motor and converter applications without external clamping components.

What package type and pin configuration does RJK03C0DPA-WS#J53 use?

RJK03C0DPA-WS#J53 uses the WPAK(3F) surface-mount package (RENESAS code PWSN0008DE-A), an 8-pin variant with three dedicated source pins (1, 2, 3), one gate pin (4), and four paralleled drain pins (5–8) connected to a common exposed copper pad. This layout minimizes source inductance and maximizes thermal conductivity-distinct from SO-8 or PowerPAK packages-and requires specific land pattern dimensions per the mechanical drawing on page 6.