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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK03C1DPB-00#J5

Name: RJK03C1DPB-00#J5
Brand: Renesas
SKU: RJK03C1DPB-00#J5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK03C1DPB-00#J5

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: RJK03C1DPB-00#J5.pdf

Description:: MOSFET N-CH 30V 60A LFPAK

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Product details

Overview

RJK03C1DPB-00#J5 from Renesas Electronics is a silicon N-channel power MOSFET with integrated Schottky barrier diode, designed for high-efficiency DC-DC conversion and synchronous rectification in automotive and industrial power supplies. It delivers R_DS(on) = 1.7 mΩ (typ. at V_GS = 10 V), supports 4.5 V gate drive, and handles 60 A continuous drain current at T_c = 25°C.

For engineers reviewing the RJK03C1DPB-00#J5 datasheet, RJK03C1DPB-00#J5 pinout, RJK03C1DPB-00#J5 application, or RJK03C1DPB-00#J5 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, fast switching (t_d(on) = 18 ns), integrated body diode performance (V_DF = 0.39 V at I_F = 2 A), thermal resistance (θ_ch-C = 1.92 °C/W), and LFPAK package suitability for high-density PCB layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and minimized gate charge (Q_g = 42 nC), enabling efficient operation in high-frequency synchronous buck converters. Its integrated Schottky barrier diode provides low forward voltage and fast reverse recovery (t_rr = 40 ns), reducing switching losses during freewheeling phases.

The device operates within a 30 V V_DSS rating and ±20 V V_GSS range, with avalanche energy rating of 78.4 mJ (I_AP = 28 A) under defined test conditions. Thermal design is supported by channel-to-case thermal resistance of 1.92 °C/W and maximum channel temperature of 150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) @ V_GS = 10 V	1.7 mΩ typ. - Enables <1 W conduction loss at 60 A, critical for high-current power stages
R_DS(on) @ V_GS = 4.5 V	2.2 mΩ typ. - Ensures robust turn-on with standard logic-level drivers without level-shifting
Q_g	42 nC - Low total gate charge reduces driver power and enables >1 MHz switching in compact designs
t_r/t_f	19 ns / 15 ns - Fast edge rates minimize overlap loss in synchronous rectifiers
V_DF	0.39 V @ I_F = 2 A - Low body diode forward drop improves light-load efficiency in CCM/DCM modes
θ_ch-C	1.92 °C/W - High thermal conductivity supports 65 W channel dissipation with minimal heatsinking

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal leadframe package with exposed drain pad for enhanced thermal and electrical performance. Dimensions: 4.9 mm × 3.95 mm × 1.1 mm max; mass: 0.080 g.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection; low-inductance parallel terminals reduce source inductance in high-di/dt switching
4	Gate	Control terminal; low input capacitance (C_iss = 6000 pF) and R_g = 0.5 Ω enable stable gate driving
5	Drain	Main power output terminal; electrically and thermally connected to exposed copper pad for PCB heat spreading

Key Features

Feature	Design Value
Integrated Schottky barrier diode	Reduces freewheeling conduction loss and eliminates need for external diode in synchronous rectifier topologies
4.5 V gate drive capability	Enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers without gate driver ICs
Low R_DS(on) × Q_g figure-of-merit	3.57 mΩ·nC - Optimized trade-off between conduction and switching loss for high-frequency power conversion
Pb-free and halogen-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements
High avalanche ruggedness	Rated for repetitive 78.4 mJ single-pulse avalanche energy - supports reliable operation under transient overvoltage conditions

Applications

Automotive DC-DC Converters	Industrial Motor Drives
Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in engine control units and ADAS modules. IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-frequency buck converter operating at 300–600 kHz. Use Value: 1.7 mΩ R_DS(on) and 40 ns t_rr reduce conduction and recovery losses, improving efficiency by ≥1.2% at 40 A load versus discrete MOSFET+diode solutions.	Use Scenario: Half-bridge leg in 24 V servo drive inverters for factory automation. IC Role / Device Role / Timing Role: Low-side switching element handling 60 A peak motor phase current with fast turn-off (t_f = 15 ns). Use Value: 2.2 mΩ on-resistance at 4.5 V gate drive ensures full enhancement using standard isolated gate drivers, minimizing gate drive complexity.
Server VRMs	Renewable Energy Inverters
Use Scenario: Multiphase CPU/GPU voltage regulator modules requiring high current density and thermal headroom. IC Role / Device Role / Timing Role: Power stage switch in 500 kHz+ multiphase buck converters with interleaved PWM. Use Value: 1.92 °C/W θ_ch-C and 65 W P_ch rating allow sustained 60 A operation with minimal thermal derating on 2 oz copper PCBs.	Use Scenario: DC link switching in solar microinverters and battery storage systems operating at 20–40 kHz. IC Role / Device Role / Timing Role: Unidirectional power switch in bidirectional DC-DC isolation stages. Use Value: Integrated Schottky diode enables zero-voltage switching (ZVS) assist during dead-time, reducing EMI and improving system efficiency at light loads.

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in engine control units and ADAS modules.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-frequency buck converter operating at 300–600 kHz.

Use Value: 1.7 mΩ R_DS(on) and 40 ns t_rr reduce conduction and recovery losses, improving efficiency by ≥1.2% at 40 A load versus discrete MOSFET+diode solutions.

Use Scenario: Half-bridge leg in 24 V servo drive inverters for factory automation.

IC Role / Device Role / Timing Role: Low-side switching element handling 60 A peak motor phase current with fast turn-off (t_f = 15 ns).

Use Value: 2.2 mΩ on-resistance at 4.5 V gate drive ensures full enhancement using standard isolated gate drivers, minimizing gate drive complexity.

Server VRMs

Renewable Energy Inverters

Use Scenario: Multiphase CPU/GPU voltage regulator modules requiring high current density and thermal headroom.

IC Role / Device Role / Timing Role: Power stage switch in 500 kHz+ multiphase buck converters with interleaved PWM.

Use Value: 1.92 °C/W θ_ch-C and 65 W P_ch rating allow sustained 60 A operation with minimal thermal derating on 2 oz copper PCBs.

Use Scenario: DC link switching in solar microinverters and battery storage systems operating at 20–40 kHz.

IC Role / Device Role / Timing Role: Unidirectional power switch in bidirectional DC-DC isolation stages.

Use Value: Integrated Schottky diode enables zero-voltage switching (ZVS) assist during dead-time, reducing EMI and improving system efficiency at light loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 3.0 mΩ @ 10 V; TO-220AB package; no integrated diode; higher Q_g (71 nC)	Requires external Schottky diode; less suitable for space-constrained synchronous rectifiers	Select when cost sensitivity outweighs board area and thermal constraints; verify gate drive strength for 3.0 mΩ R_DS(on) at target V_GS
STL220N3LLH6	R_DS(on) = 1.4 mΩ @ 10 V; PowerFLAT 5x6 package; no integrated diode; Q_g = 48 nC	Lacks integrated Schottky diode; requires layout redesign for external diode placement and routing	Prefer when lowest possible R_DS(on) is primary goal and diode integration is not required; confirm thermal interface compatibility with LFPAK footprint

Compared with IRL3803PBF and STL220N3LLH6, the RJK03C1DPB-00#J5 uniquely combines ultra-low R_DS(on), 4.5 V gate drive support, and integrated Schottky diode in the compact LFPAK package-enabling smaller PCB area, simplified BOM, and improved light-load efficiency without sacrificing ruggedness or thermal performance.

Availability

RJK03C1DPB-00#J5 is available at Aetrix Electronics and suitable for automotive infotainment power supplies, industrial PLC I/O modules, and server VRMs requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for RJK03C1DPB-00#J5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The RJK03C1DPB-00#J5 belongs to Renesas' high-current, low-R_DS(on) power MOSFET family engineered specifically for high-efficiency, high-density DC-DC conversion in demanding automotive and industrial environments.

FAQ

What is the maximum continuous drain current rating for RJK03C1DPB-00#J5?

The RJK03C1DPB-00#J5 is rated for 60 A continuous drain current (I_D) at case temperature T_c = 25°C. This rating assumes proper PCB copper area and thermal vias for heat dissipation. At elevated case temperatures, current must be derated per the Power vs. Temperature Derating curve in the datasheet-e.g., ~40 A at T_c = 75°C. The RJK03C1DPB-00#J5 achieves this performance via its low 1.92 °C/W channel-to-case thermal resistance and LFPAK package's exposed drain pad.

Does RJK03C1DPB-00#J5 have an integrated body diode, and what are its key characteristics?

Yes, the RJK03C1DPB-00#J5 integrates a Schottky barrier diode between source and drain. Its key characteristics include forward voltage V_DF = 0.39 V at I_F = 2 A and reverse recovery time t_rr = 40 ns under specified test conditions (I_F = 60 A, di_F/dt = 100 A/μs). This diode enables efficient freewheeling in synchronous rectifier configurations and eliminates the need for an external diode in many applications. The RJK03C1DPB-00#J5 leverages this feature to improve light-load efficiency and reduce component count.

Can RJK03C1DPB-00#J5 be driven directly by a 3.3 V microcontroller GPIO?

No-RJK03C1DPB-00#J5 requires minimum 4.5 V gate drive for full enhancement and low R_DS(on) performance. While it is "capable of 4.5 V gate drive" (per datasheet features), a 3.3 V GPIO cannot reliably achieve the 2.2 mΩ R_DS(on) spec at V_GS = 4.5 V. Driving the RJK03C1DPB-00#J5 from 3.3 V would result in significantly higher on-resistance and conduction loss. A level-shifting gate driver or dedicated 5 V/10 V gate driver IC is recommended for optimal RJK03C1DPB-00#J5 performance.

What is the avalanche energy rating of RJK03C1DPB-00#J5, and under what conditions is it specified?

The RJK03C1DPB-00#J5 has a single-pulse avalanche energy rating (E_AR) of 78.4 mJ, measured under conditions of channel temperature T_ch = 25°C, gate resistance R_g ≥ 50 Ω, and avalanche current I_AP = 28 A. This rating reflects the device's ability to absorb transient overvoltage energy without failure. The RJK03C1DPB-00#J5 is not rated for repetitive avalanche operation beyond datasheet limits, and system-level protection (e.g., clamping, snubbers) should still be implemented where inductive switching stresses exceed safe operating area boundaries.

Is RJK03C1DPB-00#J5 compliant with RoHS and halogen-free standards?

Yes, the RJK03C1DPB-00#J5 is Pb-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The device uses Ni/Pd/Au plating on terminals and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) standards for surface-mount reflow assembly. This compliance is explicitly stated in the "Features" section of the official Renesas datasheet REJ03G1830-0310 Rev.3.10, confirming that the RJK03C1DPB-00#J5 supports environmentally responsible manufacturing and end-of-life handling.

RJK03C1DPB-00#J5 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6000 pF @ 10 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 65W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK

RJK03C1DPB-00#J5 FAQ

1.How can I place an order for RJK03C1DPB-00#J5 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK03C1DPB-00#J5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK03C1DPB-00#J5 reliable?

The price and inventory of RJK03C1DPB-00#J5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03C1DPB-00#J5 is usually 5 days.

3.What payment methods are accepted for RJK03C1DPB-00#J5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03C1DPB-00#J5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK03C1DPB-00#J5?

RJK03C1DPB-00#J5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK03C1DPB-00#J5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK03C1DPB-00#J5?

For technical support, including RJK03C1DPB-00#J5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03C1DPB-00#J5 requirements.

6.How does Aetrix verify that RJK03C1DPB-00#J5 is sourced from the original manufacturer or authorized distributors?

All RJK03C1DPB-00#J5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03C1DPB-00#J5 meets industry standards.

7.What is the process for return or replacement of RJK03C1DPB-00#J5?

All RJK03C1DPB-00#J5 units undergo pre-shipment inspection (PSI). If there is an issue with RJK03C1DPB-00#J5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK03C1DPB-00#J5 part is unused and in its original packaging.

Return procedure for RJK03C1DPB-00#J5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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