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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK03C5DPA-WS#J5A

Name: RJK03C5DPA-WS#J5A
Brand: Renesas
SKU: RJK03C5DPA-WS#J5A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK03C5DPA-WS#J5A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: RJK03C5DPA-WS#J5A.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

RJK03C5DPA-WS#J5A from Renesas Electronics is a 30 V, 50 A N-channel power MOSFET with built-in Schottky barrier diode (SBD), low 2.9 mΩ max R_DS(on) at V_GS = 10 V, 4.5 V logic-level gate drive capability, and WPAK(3F) surface-mount package - designed for high-efficiency DC-DC converters in server VRMs and POL applications.

For engineers reviewing the RJK03C5DPA-WS#J5A datasheet, RJK03C5DPA-WS#J5A pinout, RJK03C5DPA-WS#J5A application, or RJK03C5DPA-WS#J5A equivalent, key selection criteria include its 2.4 mΩ typical R_DS(on) at 10 V, 3.3 mΩ at 4.5 V, 22 nC total gate charge, 35 ns body-diode reverse recovery time, and thermal resistance of 2.5 °C/W (channel-to-case).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in synchronous rectification topologies. Its integrated SBD enables self-commutated operation without external diode placement, reducing layout area and parasitic inductance in high-frequency buck converters.

The device supports 4.5 V gate drive compatibility with standard PWM controllers and delivers 50 A continuous drain current at T_c = 25 °C, with avalanche-rated energy of 40 mJ and peak pulse current capability up to 200 A under defined conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input bus systems and 12 V intermediate bus architectures.
R_DS(on) max @ V_GS = 10 V	2.9 mΩ - Enables <1.8 W conduction loss at 50 A, critical for high-current POL stages in AI accelerators.
R_DS(on) max @ V_GS = 4.5 V	4.3 mΩ - Ensures reliable turn-on with 5 V logic drivers, supporting legacy controller interfaces.
Q_g	22 nC - Low gate charge reduces driver power loss and allows use with low-power gate drivers in compact designs.
t_r/t_f	8 ns / 11 ns - Fast switching minimizes overlap loss in 500 kHz–1 MHz synchronous buck converters.
V_DF	0.39 V - Low forward voltage of integrated SBD cuts body-diode conduction loss during dead-time in synchronous rectification.
θ_ch-c	2.5 °C/W - High thermal efficiency enables direct mounting to copper planes without heatsinks in 30–50 A power stages.

Pinout & Package

Package: WPAK(3F), 8-pin exposed-pad surface-mount (RENESAS code PWSN0008DE-A), dimensions 5.9 mm × 4.23 mm × 0.85 mm max, mass 0.075 g, Sn-plated leads, halogen-free and Pb-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal MOSFET and integrated SBD; electrically tied to exposed die-pad for low-inductance thermal path.
4	Gate	Control terminal accepting 4.5–20 V gate drive; low 1.8 Ω typical gate resistance enables stable high-speed switching.
5, 6, 7, 8	Drain	High-current drain terminals; paralleled for 50 A continuous rating; connected internally to SBD anode.

Key Features

Feature	Design Value
Built-in Schottky Barrier Diode (SBD)	Eliminates need for external freewheeling diode, reducing BOM count and PCB area in synchronous buck converters.
Logic-level gate drive (4.5 V)	Direct interface with standard 5 V PWM controllers and microcontroller GPIOs without level-shifting circuitry.
Low R_DS(on) × Q_g figure-of-merit	2.4 mΩ × 22 nC = 52.8 mΩ·nC - Optimized for high-frequency, high-efficiency power conversion below 1 MHz.
High-density WPAK(3F) package	0.075 g mass and 5.9 mm × 4.23 mm footprint enable >70 A/in² current density in multi-phase VRMs.
Robust avalanche capability	Rated for 20 A repetitive avalanche current and 40 mJ single-pulse energy - withstands transient overvoltage in hard-switched topologies.

Applications

Server Voltage Regulator Modules	AI Accelerator Power Delivery
Use Scenario: Primary synchronous rectifier in 48 V–12 V intermediate bus converter feeding GPU/TPU power rails. IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 600 kHz with 50 A continuous output current. Use Value: 2.4 mΩ R_DS(on) at 10 V reduces conduction loss by 35% vs. comparable 3.5 mΩ devices, improving full-load efficiency by 0.8%.	Use Scenario: POL stage in multi-phase CPU/GPU VRM delivering 50–100 A per phase at ≤1 V output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with integrated SBD enabling zero-voltage switching during dead-time. Use Value: 0.39 V V_DF and 35 ns t_rr minimize reverse recovery loss, increasing light-load efficiency by 2.1% at 10% load.
Industrial Motor Drive Inverters	Telecom Rectifier Modules
Use Scenario: Half-bridge leg in 24 V BLDC motor control for robotics and CNC equipment. IC Role / Device Role / Timing Role: Low-side switch handling 50 A peak current with 200 A pulse rating for torque surge support. Use Value: 200 A ID(pulse) rating and 2.5 °C/W θ_ch-c allow sustained 50 A operation without forced air cooling in enclosed enclosures.	Use Scenario: Output rectification in 48 V telecom rectifier modules with hot-swap and OR-ing functionality. IC Role / Device Role / Timing Role: OR-ing FET with integrated SBD providing reverse-current blocking and low-loss forward conduction. Use Value: Integrated SBD eliminates discrete diode and associated layout parasitics, reducing voltage drop by 0.25 V and thermal stress on adjacent components.

Server Voltage Regulator Modules

AI Accelerator Power Delivery

Use Scenario: Primary synchronous rectifier in 48 V–12 V intermediate bus converter feeding GPU/TPU power rails.

IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 600 kHz with 50 A continuous output current.

Use Value: 2.4 mΩ R_DS(on) at 10 V reduces conduction loss by 35% vs. comparable 3.5 mΩ devices, improving full-load efficiency by 0.8%.

Use Scenario: POL stage in multi-phase CPU/GPU VRM delivering 50–100 A per phase at ≤1 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with integrated SBD enabling zero-voltage switching during dead-time.

Use Value: 0.39 V V_DF and 35 ns t_rr minimize reverse recovery loss, increasing light-load efficiency by 2.1% at 10% load.

Industrial Motor Drive Inverters

Telecom Rectifier Modules

Use Scenario: Half-bridge leg in 24 V BLDC motor control for robotics and CNC equipment.

IC Role / Device Role / Timing Role: Low-side switch handling 50 A peak current with 200 A pulse rating for torque surge support.

Use Value: 200 A ID(pulse) rating and 2.5 °C/W θ_ch-c allow sustained 50 A operation without forced air cooling in enclosed enclosures.

Use Scenario: Output rectification in 48 V telecom rectifier modules with hot-swap and OR-ing functionality.

IC Role / Device Role / Timing Role: OR-ing FET with integrated SBD providing reverse-current blocking and low-loss forward conduction.

Use Value: Integrated SBD eliminates discrete diode and associated layout parasitics, reducing voltage drop by 0.25 V and thermal stress on adjacent components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	Higher R_DS(on) (3.3 mΩ @ 10 V), no integrated SBD, TO-220AB package	Requires external freewheeling diode; unsuitable for ultra-dense POL layouts due to through-hole footprint	Select when cost sensitivity outweighs board space constraints and SBD integration is not required.
SiR872DP-T1-GE3	Lower R_DS(on) (2.0 mΩ @ 10 V), no integrated SBD, PowerPAK SO-8 package	Lacks built-in diode; higher gate charge (34 nC); requires separate diode for synchronous rectification	Choose for highest efficiency where external diode placement is acceptable and thermal performance permits.

Compared with IRL3803PbF and SiR872DP-T1-GE3, the RJK03C5DPA-WS#J5A uniquely combines integrated SBD, 4.5 V gate drive, and WPAK(3F) packaging - enabling smaller footprints, lower component count, and simplified layout in high-frequency synchronous buck converters where diode integration directly improves reliability and efficiency.

Availability

RJK03C5DPA-WS#J5A is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power delivery, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for RJK03C5DPA-WS#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and datacenter applications.

The RJK03C5DPA-WS#J5A belongs to Renesas' WPAK-series logic-level power MOSFET product line, engineered specifically for high-current, high-frequency DC-DC conversion in space-constrained computing and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for the RJK03C5DPA-WS#J5A?

The RJK03C5DPA-WS#J5A is rated for 50 A continuous drain current (I_D) at case temperature T_c = 25 °C, with derating to zero at T_c = 150 °C per the power vs. temperature derating curve. This rating assumes proper PCB copper area for thermal dissipation and is validated under pulse test conditions per the datasheet's Note 3.

Does the RJK03C5DPA-WS#J5A require a gate resistor for stable switching?

Yes - the RJK03C5DPA-WS#J5A benefits from an external gate resistor (R_g) to control dV/dt and prevent oscillation. The datasheet specifies R_g = 4.7 Ω for switching time characterization, and recommends R_g ≥ 50 Ω for avalanche testing. Typical design values range from 2.2 Ω to 10 Ω depending on driver strength and EMI requirements.

Can the RJK03C5DPA-WS#J5A be used in a synchronous buck converter without an external diode?

Yes - the RJK03C5DPA-WS#J5A integrates a Schottky barrier diode (SBD) between source and drain, allowing it to serve as both main switch and freewheeling element in low-side synchronous rectifier configurations. This eliminates the need for an external diode in many buck converter designs, reducing component count and layout complexity.

What is the thermal resistance from channel to case (θ_ch-c) for the RJK03C5DPA-WS#J5A?

The RJK03C5DPA-WS#J5A has a channel-to-case thermal resistance (θ_ch-c) of 2.5 °C/W, measured under T_c = 25 °C conditions. This value reflects direct conduction from the silicon die to the exposed copper pad in the WPAK(3F) package, enabling efficient heat transfer to the PCB thermal plane without additional heatsinking in most 50 A applications.

Is the RJK03C5DPA-WS#J5A suitable for automotive applications?

No - the RJK03C5DPA-WS#J5A is classified as a "Standard" quality grade device per Renesas documentation and is intended for computers, communications equipment, and industrial robots. It is not qualified for automotive (AEC-Q101) or safety-critical transportation applications, and Renesas explicitly excludes use in systems posing direct threat to human life or bodily injury.

RJK03C5DPA-WS#J5A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

RJK03C5DPA-WS#J5A FAQ

1.How can I place an order for RJK03C5DPA-WS#J5A through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK03C5DPA-WS#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK03C5DPA-WS#J5A reliable?

The price and inventory of RJK03C5DPA-WS#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03C5DPA-WS#J5A is usually 5 days.

3.What payment methods are accepted for RJK03C5DPA-WS#J5A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03C5DPA-WS#J5A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK03C5DPA-WS#J5A?

RJK03C5DPA-WS#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK03C5DPA-WS#J5A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK03C5DPA-WS#J5A?

For technical support, including RJK03C5DPA-WS#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03C5DPA-WS#J5A requirements.

6.How does Aetrix verify that RJK03C5DPA-WS#J5A is sourced from the original manufacturer or authorized distributors?

All RJK03C5DPA-WS#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03C5DPA-WS#J5A meets industry standards.

7.What is the process for return or replacement of RJK03C5DPA-WS#J5A?

All RJK03C5DPA-WS#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK03C5DPA-WS#J5A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK03C5DPA-WS#J5A part is unused and in its original packaging.

Return procedure for RJK03C5DPA-WS#J5A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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