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Renesas RJK03E0DNS-00#J5
- Part No.:
- RJK03E0DNS-00#J5
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
RJK03E0DNS-00#J5.pdf
- Description:
- POWER FIELD-EFFECT TRANSISTOR
- Quantity:
- Payment:
- Shipping:
Inventory:140,000
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Product details
Overview
RJK03E0DNS-00#J5 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in compact power supplies. It delivers 30 A continuous drain current at 30 V VDSS, with RDS(on) = 4.3 mΩ (typ.) at VGS = 10 V and 5.6 mΩ (typ.) at VGS = 4.5 V, enabling low-conduction-loss operation in 5 V gate-driven systems such as USB PD adapters and industrial SMPS.
For engineers reviewing the RJK03E0DNS-00#J5 datasheet, RJK03E0DNS-00#J5 pinout, RJK03E0DNS-00#J5 application, or RJK03E0DNS-00#J5 equivalent, key selection criteria include its HWSON-8 package thermal performance (θch-c = 6.25 °C/W), avalanche energy rating (EAR = 16.9 mJ), and fast switching parameters (td(on) = 13.6 ns, tf = 7 ns) critical for synchronous buck converters operating above 500 kHz.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and reduced gate charge (Qg = 15.2 nC), supporting high-frequency PWM control without excessive driver losses. Its body diode exhibits trr = 18 ns and VDF = 0.84 V (typ.) at IF = 30 A, making it suitable for freewheeling paths where reverse recovery behavior impacts efficiency and EMI.
The device operates within a channel temperature range of –55 to +150 °C and supports gate drive voltages from ±20 V, with VGS(off) specified between 1.2 V and 2.5 V - ensuring reliable turn-off margin in noisy industrial environments while maintaining compatibility with standard 3.3 V and 5 V logic-level controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 24 V input rail applications with 20 % safety margin |
| RDS(on) @ VGS = 10 V | 4.3 mΩ typ. - Enables ≤1.9 W conduction loss at 30 A, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 5.6 mΩ typ. - Supports direct drive from microcontroller GPIOs or low-voltage gate drivers |
| Qg | 15.2 nC - Low total gate charge minimizes switching loss and driver power consumption |
| td(on)/tf | 13.6 ns / 7 ns - Fast edge rates support >1 MHz switching frequencies in GaN-complementary topologies |
| EAR | 16.9 mJ - Rated repetitive avalanche energy allows safe operation during inductive load transients |
| θch-c | 6.25 °C/W - Enables 20 W channel dissipation with ≤125 °C case temperature rise under forced air |
Pinout & Package
Package: HWSON-8 (RENESAS code PWSN0008JB-A), 2.9 mm × 3.1 mm × 0.8 mm profile, exposed drain pad for thermal enhancement and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node; electrically tied to PCB ground plane via thermal pad for low-inductance return path |
| 4 | Gate | Control terminal; requires <5.6 mΩ gate resistance to limit ringing and ensure stable 4.5 V turn-on |
| 5, 6, 7, 8 | Drain | Main power output node; connected to exposed copper pad on bottom surface for thermal and current conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V drive | 5.6 mΩ typ. enables use with 3.3/5 V controllers without level-shifting circuitry |
| High-density HWSON-8 packaging | 2.9 × 3.1 mm footprint saves >40 % board area vs. SO-8 in multi-phase VRMs |
| Fast switching with low Qgd | Qgd = 4.0 nC reduces Miller plateau duration, improving hard-switching robustness |
| Pb-free and halogen-free construction | Complies with JEDEC J-STD-020 moisture sensitivity level 2a (MSL 2a) for reflow assembly |
| Body diode with controlled trr | 18 ns reverse recovery time limits voltage overshoot in synchronous rectification |
Applications
| Server VRM Phase Legs | USB-C PD Adapters |
|---|---|
|
Use Scenario: High-current, high-frequency phase-leg switch in 48 V–12 V intermediate bus converters for AI accelerators. IC Role / Device Role / Timing Role: High-side synchronous rectifier with 30 A continuous current handling and sub-15 ns turn-on delay. Use Value: 4.3 mΩ RDS(on) at 10 V reduces conduction loss by 32 % versus comparable 6 mΩ MOSFETs, lowering thermal stress in 1U chassis. |
Use Scenario: Primary-side switching FET in 100 W USB-C power adapter with 94 % peak efficiency target. IC Role / Device Role / Timing Role: Main power switch in active-clamp forward topology, driven by 5 V gate signal from PWM controller. Use Value: 5.6 mΩ RDS(on) at 4.5 V eliminates need for external gate driver IC, simplifying BOM and layout. |
| Industrial Motor Drives | Telecom DC-DC Modules |
|
Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting regenerative braking current. Use Value: 18 ns trr and 0.84 V VDF minimize diode conduction loss and voltage spikes during commutation. |
Use Scenario: Point-of-load (POL) switch in 48 V telecom shelf power system delivering 20 A at 3.3 V. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback converter with tight thermal constraints. Use Value: θch-c = 6.25 °C/W allows full 20 W dissipation with only 125 °C channel temperature under natural convection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 5.5 mΩ @ 10 V; larger SO-8 package (5 × 6 mm); higher Qg = 22 nC | Requires larger PCB area and higher gate drive power; less suitable for space-constrained 12 V input designs | Preferred when legacy SO-8 footprint compatibility is required and thermal budget permits higher θJA |
| SiR872DP-T1-GE3 | RDS(on) = 4.0 mΩ @ 10 V; PowerPAK® 1212-8 package; Qg = 17.5 nC; no specified avalanche rating | Lacks documented EAR specification; unsuitable for inductive transient-prone motor control | Selected for maximum efficiency in fixed 12 V input SMPS where avalanche immunity is not mandated |
Compared with IRF7470PBF and SiR872DP-T1-GE3, RJK03E0DNS-00#J5 uniquely balances ultra-low RDS(on), industry-leading small-footprint thermal performance, and guaranteed avalanche capability - making it optimal for next-gen compact, high-reliability power stages where board area, efficiency, and ruggedness are jointly constrained.
Availability
RJK03E0DNS-00#J5 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, and industrial motor drives requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.
Supply support for RJK03E0DNS-00#J5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The RJK03E0DNS-00#J5 belongs to Renesas' Power MOSFET product line engineered for high-efficiency, high-density DC-DC conversion in space- and thermally-constrained systems.
FAQ
What is the maximum continuous drain current rating for RJK03E0DNS-00#J5 at 25°C case temperature?
The RJK03E0DNS-00#J5 has a maximum continuous drain current (ID) rating of 30 A at Tc = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is derated linearly above 25°C per the Power vs. Temperature Derating curve on page 3 of the datasheet. Operation beyond this limit risks thermal runaway or permanent damage to the RJK03E0DNS-00#J5.
Does RJK03E0DNS-00#J5 support logic-level gate drive, and what is its threshold voltage range?
Yes, RJK03E0DNS-00#J5 supports logic-level gate drive with guaranteed turn-on at VGS = 4.5 V, delivering RDS(on) = 5.6 mΩ (typ.). Its gate threshold voltage (VGS(off)) is specified from 1.2 V to 2.5 V at ID = 1 mA, ensuring reliable enhancement-mode operation with standard 3.3 V or 5 V microcontroller outputs. This makes the RJK03E0DNS-00#J5 suitable for direct GPIO drive without external level shifters.
What is the thermal resistance from channel to case (θch-c) for RJK03E0DNS-00#J5, and how does it impact heatsink design?
The RJK03E0DNS-00#J5 has a channel-to-case thermal resistance (θch-c) of 6.25 °C/W, measured under Tc = 25°C conditions. This low value reflects efficient heat transfer from the silicon die to the exposed drain pad, allowing up to 20 W channel dissipation with only a 125°C temperature rise. When designing heatsinks, this θch-c must be summed with θcase-ambient to determine total thermal path - the RJK03E0DNS-00#J5's HWSON-8 package enables direct thermal interface to inner-layer copper or external metal heatsinks.
Is RJK03E0DNS-00#J5 rated for avalanche operation, and what are its key avalanche parameters?
Yes, RJK03E0DNS-00#J5 is fully rated for repetitive avalanche operation. Its datasheet specifies an avalanche current (IAP) of 13 A and avalanche energy (EAR) of 16.9 mJ at Tch = 25°C with Rg ≥ 50 Ω. These values are validated using the test circuit on page 5 and enable safe clamping of inductive switching transients in motor drives and solenoid controls - a key differentiator versus non-avalanche-rated MOSFETs like many standard logic-level devices. The RJK03E0DNS-00#J5's guaranteed EAR ensures reliability in unclamped inductive switching.
What is the gate charge profile of RJK03E0DNS-00#J5, and how does it affect switching loss in high-frequency designs?
The RJK03E0DNS-00#J5 has a total gate charge (Qg) of 15.2 nC, with Qgs = 6.8 nC and Qgd = 4.0 nC at VDD = 10 V and ID = 30 A. Its low Qgd minimizes Miller-induced switching delay and dv/dt-induced false turn-on, while the moderate Qg enables efficient drive with common 1 A gate drivers. In 1 MHz-class converters, this profile reduces gate drive loss to <15 mW and supports clean, fast edges - directly improving efficiency and EMI in high-frequency RJK03E0DNS-00#J5-based power stages.
RJK03E0DNS-00#J5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 15.2 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 3050 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 20W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HWSON (3.3x3.3)
RJK03E0DNS-00#J5 FAQ
1.How can I place an order for RJK03E0DNS-00#J5 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK03E0DNS-00#J5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK03E0DNS-00#J5 reliable?
The price and inventory of RJK03E0DNS-00#J5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03E0DNS-00#J5 is usually 5 days.
3.What payment methods are accepted for RJK03E0DNS-00#J5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03E0DNS-00#J5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK03E0DNS-00#J5?
RJK03E0DNS-00#J5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK03E0DNS-00#J5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK03E0DNS-00#J5?
For technical support, including RJK03E0DNS-00#J5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03E0DNS-00#J5 requirements.
6.How does Aetrix verify that RJK03E0DNS-00#J5 is sourced from the original manufacturer or authorized distributors?
All RJK03E0DNS-00#J5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03E0DNS-00#J5 meets industry standards.
7.What is the process for return or replacement of RJK03E0DNS-00#J5?
All RJK03E0DNS-00#J5 units undergo pre-shipment inspection (PSI). If there is an issue with RJK03E0DNS-00#J5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK03E0DNS-00#J5 part is unused and in its original packaging.
Return procedure for RJK03E0DNS-00#J5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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