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Renesas RJK03E1DNS-00#J5
- Part No.:
- RJK03E1DNS-00#J5
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
RJK03E1DNS-00#J5.pdf
- Description:
- POWER FIELD-EFFECT TRANSISTOR
- Quantity:
- Payment:
- Shipping:
Inventory:79,482
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Product details
Overview
RJK03E1DNS-00#J5 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and synchronous rectification in compact power supplies. It delivers 5.3 mΩ RDS(on) at VGS = 10 V, supports 4.5 V gate drive, and handles 25 A continuous drain current in an HWSON-8 package - enabling high-density, low-loss switching in POL converters and battery-powered systems.
For engineers reviewing the RJK03E1DNS-00#J5 datasheet, RJK03E1DNS-00#J5 pinout, RJK03E1DNS-00#J5 application, or RJK03E1DNS-00#J5 equivalent, key selection criteria include its 30 V VDSS, low Qg (10.7 nC), fast switching (td(on) = 9.4 ns), and thermal resistance (θch-c = 8.33 °C/W) - all critical for optimizing efficiency and thermal management in space-constrained 5–12 V input power stages.
Technical Context
This MOSFET operates as a low-side synchronous rectifier or main switch in buck converters and OR-ing circuits. Its 30 V breakdown voltage and 25 A continuous current rating target 12 V bus applications, while the 4.5 V gate threshold enables direct drive from standard logic-level controllers without level-shifting.
The device features low output capacitance (Coss = 220 pF typ.) and minimal reverse transfer capacitance (Crss = 113 pF typ.), reducing switching losses and improving EMI performance. Its body diode exhibits trr = 15 ns and VDF = 0.84 V at 25 A, supporting efficient freewheeling with low conduction loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Supports 12 V input rails with margin against transients and ripple. |
| RDS(on) @ VGS = 10 V | 5.3 mΩ typ. - Enables <1 W conduction loss at 25 A, critical for high-current POL stages. |
| RDS(on) @ VGS = 4.5 V | 7.0 mΩ typ. - Ensures robust on-state performance with standard 5 V or 4.5 V gate drivers. |
| Qg | 10.7 nC - Low gate charge reduces driver power demand and speeds turn-on/turn-off transitions. |
| td(on)/td(off) | 9.4 ns / 36 ns - Fast switching minimizes overlap loss in synchronous buck topologies. |
| θch-c | 8.33 °C/W - Enables 15 W channel dissipation at ≤25 °C case temperature, supporting high-power density layouts. |
| Ciss/Coss/Crss | 1640 / 220 / 113 pF - Low capacitance values reduce Miller effect and improve hard-switching efficiency. |
Pinout & Package
Package: HWSON-8 (RENESAS code PWSN0008JB-A), 2.9 mm × 3.1 mm × 0.8 mm, thermally enhanced exposed drain pad, surface-mount, lead-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel FET cells; tied to PCB ground plane for low-inductance return path. |
| 4 | Gate | Control terminal requiring <11 nC total charge; sensitive to ESD but compatible with standard logic-level drivers. |
| 5, 6, 7, 8 | Drain | Exposed thermal pad and four perimeter pins - jointly carry full 25 A current and conduct heat to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V drive | 7.0 mΩ ensures full enhancement with microcontroller GPIO or PWM controller outputs without external level shifters. |
| High-density HWSON-8 footprint | 2.9 × 3.1 mm outline with exposed drain pad enables >40 A/in² current density and simplified thermal layout. |
| Fast switching with low Qgd | 2.5 nC gate-to-drain charge minimizes Miller plateau duration, improving controllability in high-frequency (>1 MHz) designs. |
| Robust avalanche capability | 12 A IAP and 14.4 mJ EAR support reliable operation under inductive load switching stress without snubbers. |
| Pb-free and halogen-free construction | Complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS Directive 2011/65/EU. |
Applications
| Server VRM Output Stage | USB-C PD Portable Charger |
|---|---|
|
Use Scenario: High-current, high-frequency synchronous rectifier in 4-phase 12 V → 1.2 V buck converter for CPU/GPU VRMs. IC Role / Device Role / Timing Role: Low-side power switch operating at 500 kHz–1 MHz with precise dead-time control to prevent shoot-through. Use Value: 5.3 mΩ RDS(on) and 10.7 nC Qg reduce conduction and switching losses, directly improving VRM efficiency by ≥0.8% at 200 A load. |
Use Scenario: Primary-side high-side switch and secondary-side synchronous rectifier in dual-output 20 V/9 V USB-C PD charger. IC Role / Device Role / Timing Role: N-channel MOSFET used in both high-side (with bootstrap gate driver) and low-side positions due to 4.5 V logic compatibility. Use Value: 7.0 mΩ RDS(on) at 4.5 V enables direct integration with common PD controller ICs (e.g., MP6908), eliminating discrete level shifters and saving board area. |
| Industrial PLC I/O Module | Medical Portable Infusion Pump |
|
Use Scenario: Solid-state relay replacement for 24 V DC output switching in programmable logic controller digital output modules. IC Role / Device Role / Timing Role: Power switch controlling solenoid, valve, or indicator loads with fast turn-on (<10 ns) and controlled dV/dt. Use Value: 100 A peak current rating and 14.4 mJ avalanche energy allow safe interruption of inductive loads without external flyback diodes or clamps. |
Use Scenario: Battery protection and motor drive switching in Class II medical-grade portable infusion pumps powered by Li-ion packs. IC Role / Device Role / Timing Role: Main power path switch isolating battery from motor driver during fault conditions or standby mode. Use Value: MSL1 packaging and guaranteed 150 °C channel temperature rating ensure reliability under continuous operation in sealed, thermally constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 (Vishay) | 30 V VDSS, 4.5 mΩ RDS(on) @ 10 V, but requires 6 V min gate drive for full enhancement; larger PowerPAK SO-8 package (3.3 × 3.3 mm). | Higher RDS(on) at 4.5 V (10.5 mΩ) limits use in 4.5 V-driven designs; better suited for 6–12 V gate drive systems. | Select when higher avalanche ruggedness (20 mJ) is prioritized over gate-drive compatibility. |
| IRLHS6342TRPBF (Infineon) | 30 V VDSS, 6.2 mΩ RDS(on) @ 4.5 V, identical HWSON-8 footprint and pinout, but higher Qg (14.5 nC) and slower td(off) (52 ns). | Suitable for same PCB layout but incurs ~12% higher switching loss at 1 MHz due to increased gate charge and longer off-delay. | Choose when supply-chain diversification is needed and minor efficiency trade-off is acceptable. |
Compared with SiR872DP-T1-GE3 and IRLHS6342TRPBF, RJK03E1DNS-00#J5 uniquely balances 4.5 V logic compatibility, ultra-low Qg, and HWSON-8 thermal performance - making it optimal for space- and efficiency-critical 12 V input DC-DC stages where gate drive voltage headroom is limited.
Availability
RJK03E1DNS-00#J5 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD chargers, industrial PLC I/O modules, and medical portable infusion pumps requiring stable component supply across multi-year production cycles.
Supply support for RJK03E1DNS-00#J5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
RJK03E1DNS-00#J5 belongs to Renesas' Power MOSFET product line engineered for high-efficiency, high-density DC-DC conversion in computing, communications, and portable medical equipment.
FAQ
What is the maximum continuous drain current rating for RJK03E1DNS-00#J5?
The RJK03E1DNS-00#J5 is rated for 25 A continuous drain current (ID) at Tc = 25 °C. This rating assumes proper PCB copper area for thermal dissipation; derating applies above 25 °C case temperature per the power vs. temperature curve on page 3 of the datasheet. At Tc = 75 °C, the usable ID drops to approximately 15 A.
Does RJK03E1DNS-00#J5 support 3.3 V gate drive?
No - RJK03E1DNS-00#J5 is not fully enhanced at 3.3 V gate drive. Its gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, but RDS(on) is only specified at VGS = 4.5 V (7.0 mΩ typ.) and VGS = 10 V (5.3 mΩ typ.). At 3.3 V, RDS(on) increases significantly and is not characterized; operation is not recommended.
What is the thermal resistance from channel to case (θch-c) for RJK03E1DNS-00#J5?
The channel-to-case thermal impedance (θch-c) of RJK03E1DNS-00#J5 is 8.33 °C/W, measured under Tc = 25 °C conditions. This value reflects heat flow from the silicon die through the exposed drain pad into the PCB copper; actual system-level θJA depends on board layout, copper area, and airflow.
Can RJK03E1DNS-00#J5 be used in avalanche mode?
Yes - RJK03E1DNS-00#J5 is characterized for repetitive avalanche operation with IAP = 12 A and EAR = 14.4 mJ at Tch = 25 °C. The datasheet provides avalanche test circuit details and derating curves (page 4). Designers must limit single-pulse energy and ensure channel temperature remains below 150 °C during avalanche events.
Is RJK03E1DNS-00#J5 pin-compatible with other HWSON-8 MOSFETs?
RJK03E1DNS-00#J5 uses the standard HWSON-8 footprint (JEITA code P-HWSON8-2.9x3.1-0.65) with 1–3 = Source, 4 = Gate, 5–8 = Drain. While physical pinout matches industry-standard HWSON-8 devices like IRLHS6342TRPBF, electrical characteristics (e.g., RDS(on), Qg) differ - verify layout compatibility and re-validate thermal and switching performance when substituting.
RJK03E1DNS-00#J5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 6.9mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 10.7 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 2300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 15W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HWSON (3.3x3.3)
RJK03E1DNS-00#J5 FAQ
1.How can I place an order for RJK03E1DNS-00#J5 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK03E1DNS-00#J5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK03E1DNS-00#J5 reliable?
The price and inventory of RJK03E1DNS-00#J5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03E1DNS-00#J5 is usually 5 days.
3.What payment methods are accepted for RJK03E1DNS-00#J5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03E1DNS-00#J5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK03E1DNS-00#J5?
RJK03E1DNS-00#J5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK03E1DNS-00#J5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK03E1DNS-00#J5?
For technical support, including RJK03E1DNS-00#J5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03E1DNS-00#J5 requirements.
6.How does Aetrix verify that RJK03E1DNS-00#J5 is sourced from the original manufacturer or authorized distributors?
All RJK03E1DNS-00#J5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03E1DNS-00#J5 meets industry standards.
7.What is the process for return or replacement of RJK03E1DNS-00#J5?
All RJK03E1DNS-00#J5 units undergo pre-shipment inspection (PSI). If there is an issue with RJK03E1DNS-00#J5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK03E1DNS-00#J5 part is unused and in its original packaging.
Return procedure for RJK03E1DNS-00#J5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RJK03E1DNS-00#J5 Tags
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