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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK03L3DNS-WS#J5

Name: RJK03L3DNS-WS#J5
Brand: Renesas
SKU: RJK03L3DNS-WS#J5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK03L3DNS-WS#J5

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: RJK03L3DNS-WS#J5.pdf

Description:: N CHANNEL POWER MOS FET

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Product details

Overview

RJK03L3DNS-WS#J5 from Renesas Electronics is a silicon N-channel power MOSFET with integrated Schottky barrier diode, designed for high-efficiency DC-DC power switching in compact load switches and synchronous rectifiers. It delivers R_DS(on) = 5.3 mΩ (typ.) at V_GS = 10 V, supports 4.5 V gate drive, and handles 25 A continuous drain current with 30 V V_DSS, enabling use in 24 V industrial power rails.

For engineers reviewing the RJK03L3DNS-WS#J5 datasheet, RJK03L3DNS-WS#J5 pinout, RJK03L3DNS-WS#J5 application, or RJK03L3DNS-WS#J5 equivalent, key selection factors include its low R_DS(on) at 4.5 V gate drive, integrated body diode with 0.47 V forward voltage, and HWSON-8 package thermal performance (θ_ch-c = 8.33 °C/W).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-density power stages. Its design integrates a co-packaged Schottky barrier diode to reduce reverse recovery losses and enable efficient synchronous rectification without external diode placement.

It operates within a channel temperature range of –55°C to +150°C and is rated for avalanche energy E_AS = 11 mJ (T_ch = 25°C), supporting robust operation under transient overvoltage conditions in unregulated input applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 24 V nominal bus systems with margin
R_DS(on) @ 10 V	5.3 mΩ typ. - Enables <130 mW conduction loss at 25 A, reducing thermal load
R_DS(on) @ 4.5 V	6.7 mΩ typ. - Supports direct logic-level drive from 3.3 V/5 V controllers without level shifters
Q_g	12.3 nC typ. - Low gate charge enables fast turn-on with minimal driver power dissipation
V_GS(th)	1.2–2.5 V - Ensures reliable enhancement-mode turn-on with wide gate voltage margin
t_r/t_f	3.7 ns / 9.4 ns - Sub-10 ns switching transitions minimize overlap loss in high-frequency PWM
V_DF	0.47 V typ. @ 2 A - Integrated Schottky diode reduces reverse conduction loss vs. standard body diode

Pinout & Package

Package: HWSON-8 (RENESAS code PWSN0008JB-A), 2.9 mm × 3.1 mm, 0.65 mm pitch, exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal MOSFET and Schottky anode; tied to PCB ground plane
4	Gate	Control terminal requiring <12.3 nC charge; sensitive to ESD; routed with controlled impedance
5, 6, 7, 8	Drain	High-current drain terminals and exposed thermal pad - electrically and thermally connected to V_IN

Key Features

Feature	Design Value
Integrated Schottky barrier diode	Eliminates need for external freewheeling diode; reduces BOM count and layout area in buck converters
4.5 V gate drive capability	Enables direct interface with 3.3 V microcontrollers and logic-level PWM generators without gate drivers
Low R_DS(on) at 10 V	Minimizes I²R losses in high-current paths, allowing smaller heatsinks or higher ambient operation
Pb-free and halogen-free construction	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity requirements
HWSON-8 thermal design	Exposed drain pad provides low thermal resistance path (θ_ch-c = 8.33 °C/W) to PCB copper

Applications

Industrial Motor Drives	Server VRMs
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate drivers for factory automation actuators. IC Role / Device Role / Timing Role: Power switching element controlling phase current; requires fast turn-off (<30 ns) to prevent shoot-through. Use Value: 6.7 mΩ R_DS(on) at 4.5 V enables direct MCU GPIO control; integrated Schottky prevents cross-conduction during dead-time.	Use Scenario: Synchronous rectifier in multiphase 12 V → 1.2 V buck converters for CPU/GPU power delivery. IC Role / Device Role / Timing Role: Low-side switch conducting >25 A per phase; must support >500 kHz switching with minimal Q_g-related losses. Use Value: 12.3 nC Q_g and 3.7 ns t_r reduce driver power and improve efficiency at high frequency.
Telecom DC-DC Modules	Automotive Body Control Units
Use Scenario: Primary switch in isolated 48 V → 12 V flyback converters for telecom base station power supplies. IC Role / Device Role / Timing Role: Main power FET handling 25 A peak current; subjected to repetitive avalanche stress during output short-circuit events. Use Value: 11 mJ E_AS rating ensures survivability during fault conditions without external snubbers.	Use Scenario: Load switch for 12 V accessory circuits (e.g., power seats, window lifts) in automotive BCMs. IC Role / Device Role / Timing Role: High-side protected switch with integrated reverse polarity protection via Schottky diode orientation. Use Value: 0.47 V V_DF minimizes voltage drop during battery reverse-connection events, preserving system functionality.

Industrial Motor Drives

Server VRMs

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate drivers for factory automation actuators.

IC Role / Device Role / Timing Role: Power switching element controlling phase current; requires fast turn-off (<30 ns) to prevent shoot-through.

Use Value: 6.7 mΩ R_DS(on) at 4.5 V enables direct MCU GPIO control; integrated Schottky prevents cross-conduction during dead-time.

Use Scenario: Synchronous rectifier in multiphase 12 V → 1.2 V buck converters for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Low-side switch conducting >25 A per phase; must support >500 kHz switching with minimal Q_g-related losses.

Use Value: 12.3 nC Q_g and 3.7 ns t_r reduce driver power and improve efficiency at high frequency.

Telecom DC-DC Modules

Automotive Body Control Units

Use Scenario: Primary switch in isolated 48 V → 12 V flyback converters for telecom base station power supplies.

IC Role / Device Role / Timing Role: Main power FET handling 25 A peak current; subjected to repetitive avalanche stress during output short-circuit events.

Use Value: 11 mJ E_AS rating ensures survivability during fault conditions without external snubbers.

Use Scenario: Load switch for 12 V accessory circuits (e.g., power seats, window lifts) in automotive BCMs.

IC Role / Device Role / Timing Role: High-side protected switch with integrated reverse polarity protection via Schottky diode orientation.

Use Value: 0.47 V V_DF minimizes voltage drop during battery reverse-connection events, preserving system functionality.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 6.0 mΩ @ 10 V; SO-8 package; no integrated Schottky diode	Lacks co-packaged diode - requires external Schottky for synchronous rectification	Choose when board space allows discrete diode placement and thermal management favors SO-8 mounting
SiR872DP-T1-GE3	R_DS(on) = 4.8 mΩ @ 10 V; PowerPAK® 1212-8; no integrated Schottky	Lower R_DS(on) but no built-in diode; higher Q_g (22 nC) increases driver complexity	Prefer when maximum efficiency at 10 V gate drive is critical and diode function is implemented separately

Compared with IRF7470PBF and SiR872DP-T1-GE3, the RJK03L3DNS-WS#J5 uniquely combines low 4.5 V R_DS(on), integrated Schottky diode, and HWSON-8 thermal performance - making it optimal for space-constrained, logic-level-driven synchronous buck stages where diode integration reduces component count and improves reliability.

Availability

RJK03L3DNS-WS#J5 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, telecom DC-DC modules, and automotive body control units requiring stable component supply and long-term production continuity.

Supply support for RJK03L3DNS-WS#J5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The RJK03L3DNS product line targets high-density, high-efficiency power switching in space-constrained applications - emphasizing low gate drive voltage compatibility, integrated protection features, and thermally enhanced packaging.

FAQ

What is the maximum continuous drain current rating for RJK03L3DNS-WS#J5?

The RJK03L3DNS-WS#J5 is rated for 25 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper PCB copper area for thermal conduction through the exposed drain pad. At elevated case temperatures, derating applies per the power vs. temperature curve - e.g., ~15 W channel dissipation at T_c = 75°C. Always verify thermal design using θ_ch-c = 8.33 °C/W and actual board layout.

Does RJK03L3DNS-WS#J5 include a built-in Schottky diode, and how is it connected?

Yes, the RJK03L3DNS-WS#J5 integrates a Schottky barrier diode between source and drain. The diode anode connects to the source terminals (pins 1–3), and the cathode connects to the drain terminals (pins 5–8) and exposed thermal pad. This configuration enables forward conduction from source to drain, supporting synchronous rectification and reverse-polarity protection in high-side switch applications.

What is the gate threshold voltage range for RJK03L3DNS-WS#J5, and why does it matter?

The gate-to-source cutoff voltage (V_GS(off)) for RJK03L3DNS-WS#J5 is specified as 1.2–2.5 V at I_D = 1 mA. This defines the minimum gate voltage required to reliably turn on the device. A low, well-controlled V_GS(th) ensures consistent turn-on behavior with 3.3 V or 4.5 V logic drivers and avoids partial conduction states that increase power loss and thermal stress in the RJK03L3DNS-WS#J5.

Can RJK03L3DNS-WS#J5 be used in avalanche-rated applications?

Yes, the RJK03L3DNS-WS#J5 is characterized for single-pulse avalanche operation with I_AP = 10.5 A and E_AS = 11 mJ at T_ch = 25°C. These ratings apply under defined test conditions (R_g ≥ 50 Ω, T_ch = 25°C). For repetitive avalanche or elevated temperature use, designers must consult the maximum avalanche energy vs. channel temperature derating curve on page 4 of the RJK03L3DNS datasheet to ensure safe operation of the RJK03L3DNS-WS#J5.

What is the recommended PCB layout practice for thermal management of RJK03L3DNS-WS#J5?

Optimal thermal performance for RJK03L3DNS-WS#J5 requires connecting the exposed drain pad (pins 5–8) to a large, multi-layer PCB copper pour using ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). The datasheet specifies θ_ch-c = 8.33 °C/W assuming a 1-inch² 2-oz copper area. Avoid solder mask over the thermal pad and ensure solder paste stencil aperture matches the JEITA footprint P-HWSON8-2.9x3.1-0.65 to maximize heat transfer from the RJK03L3DNS-WS#J5.

RJK03L3DNS-WS#J5 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

RJK03L3DNS-WS#J5 FAQ

1.How can I place an order for RJK03L3DNS-WS#J5 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK03L3DNS-WS#J5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK03L3DNS-WS#J5 reliable?

The price and inventory of RJK03L3DNS-WS#J5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03L3DNS-WS#J5 is usually 5 days.

3.What payment methods are accepted for RJK03L3DNS-WS#J5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03L3DNS-WS#J5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK03L3DNS-WS#J5?

RJK03L3DNS-WS#J5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK03L3DNS-WS#J5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK03L3DNS-WS#J5?

For technical support, including RJK03L3DNS-WS#J5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03L3DNS-WS#J5 requirements.

6.How does Aetrix verify that RJK03L3DNS-WS#J5 is sourced from the original manufacturer or authorized distributors?

All RJK03L3DNS-WS#J5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03L3DNS-WS#J5 meets industry standards.

7.What is the process for return or replacement of RJK03L3DNS-WS#J5?

All RJK03L3DNS-WS#J5 units undergo pre-shipment inspection (PSI). If there is an issue with RJK03L3DNS-WS#J5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK03L3DNS-WS#J5 part is unused and in its original packaging.

Return procedure for RJK03L3DNS-WS#J5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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