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Renesas RJK03M0DPA-WS#J5A
- Part No.:
- RJK03M0DPA-WS#J5A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK03M0DPA-WS#J5A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,120
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Product details
Overview
RJK03M0DPA-WS#J5A from Renesas Electronics is a 30V, 65A N-channel power MOSFET in WPAK(3F) package with 1.9 mΩ max RDS(on) at VGS = 4.5 V, rated for high-speed switching in DC-DC converters and motor drives, and qualified for industrial applications per Renesas Standard grade.
For engineers reviewing the RJK03M0DPA-WS#J5A datasheet, RJK03M0DPA-WS#J5A pinout, RJK03M0DPA-WS#J5A application, or RJK03M0DPA-WS#J5A equivalent, key selection criteria include gate drive compatibility at 4.5 V, avalanche energy rating (57.6 mJ), thermal resistance (2.5 °C/W), body diode recovery time (10.9 ns), and Pb-free/halogen-free compliance.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and fast switching, supporting synchronous rectification in buck converters and half-bridge motor control. Its 1.2 Ω typical gate resistance and 33.0 nC total gate charge enable efficient drive with standard gate drivers.
The device features an integrated body diode with 0.83–1.08 V forward voltage at 65 A and 10.9 ns reverse recovery time, enabling operation in hard-switched topologies without external freewheeling diodes. Thermal design is anchored to a channel-to-case impedance of 2.5 °C/W and 150 °C maximum channel temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V bus systems. |
| RDS(on) max | 1.9 mΩ at VGS = 4.5 V, ID = 32.5 A - Enables <1.5 W conduction loss at 65 A in continuous operation. |
| Qg | 33.0 nC - Determines gate driver current requirement (~1.65 A peak for 20 ns rise time). |
| EAS | 57.6 mJ at Tch = 25 °C - Supports single-pulse inductive load switching without failure. |
| trr | 10.9 ns - Limits reverse recovery losses and EMI in high-frequency switching (>500 kHz). |
| θch-c | 2.5 °C/W - Requires minimum 25 mm² copper area under exposed drain pad for 50 W dissipation at Tc = 25 °C. |
Pinout & Package
Package: WPAK(3F), Renesas code PWSN0008DE-A - thermally enhanced surface-mount package with exposed drain pad, 8-pin configuration, 0.075 g mass, and Sn plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection; electrically tied internally; used for low-side return path and Kelvin sensing. |
| 4 | Gate | Control terminal; requires 4.5 V min for full enhancement; gate leakage ≤ ±0.5 μA at ±20 V. |
| 5, 6, 7, 8 | Drain | High-current drain terminals; connected to exposed metal pad; primary thermal path to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V drive | 1.9 mΩ max enables use with 3.3 V/5 V microcontroller GPIOs without level-shifting. |
| Fast switching with low Qgd/Qg ratio | Qgd = 8.5 nC / Qg = 33.0 nC = 0.26 - reduces Miller plateau duration and improves dV/dt immunity. |
| Integrated body diode with short trr | 10.9 ns recovery supports synchronous rectification in high-frequency DC-DC converters. |
| Pb-free and halogen-free construction | Complies with JEDEC J-STD-020 moisture sensitivity level 1 and RoHS Directive 2011/65/EU. |
Applications
| DC-DC Converter | Motor Drive |
|---|---|
Use Scenario: Synchronous rectifier in 24 V input, 5–12 V output buck converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: Low-side power switch handling continuous 65 A output current with <1.9 mΩ on-resistance. Use Value: Reduces conduction loss by >40% vs. comparable 30 V MOSFETs with RDS(on) > 3 mΩ at 4.5 V drive. |
Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for automated guided vehicles (AGVs). IC Role / Device Role / Timing Role: High-current switching element with 260 A pulse rating for stall-current protection. Use Value: Avalanche energy rating of 57.6 mJ withstands inductive kickback during rapid PWM shutdown. |
| Power OR-ing | Hot-Swap Controller |
Use Scenario: Back-to-back configuration in redundant 24 V power distribution for factory automation controllers. IC Role / Device Role / Timing Role: Reverse-current blocking switch with low VSD and fast turn-on for fault isolation. Use Value: Body diode forward voltage of 0.83 V minimizes voltage drop during OR-ing conduction. |
Use Scenario: Inrush current limiter in 24 V hot-swap module for modular I/O chassis. IC Role / Device Role / Timing Role: Main pass FET controlled via external gate driver to limit dI/dt during insertion. Use Value: Gate threshold voltage range (1.2–2.5 V) enables precise turn-on control using analog feedback circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 3.0 mΩ @ 4.5 V; Qg = 52 nC; TO-220AB package; no integrated avalanche rating. | Higher conduction loss and slower switching; requires heatsink; unsuitable for unclamped inductive loads. | Select when cost is prioritized over efficiency and thermal density; verify PCB layout supports TO-220 footprint and thermal relief. |
| SiR872DP-T1-GE3 | RDS(on) = 1.8 mΩ @ 4.5 V; Qg = 36 nC; PowerPAK SO-8; EAS = 42 mJ; higher Ciss (5500 pF). | Similar RDS(on) but lower avalanche robustness; larger input capacitance increases gate drive demand. | Select when SO-8 footprint compatibility is required; confirm system-level EMI filtering accommodates higher Ciss. |
Compared with IRL3803PBF and SiR872DP-T1-GE3, the RJK03M0DPA-WS#J5A delivers superior avalanche ruggedness (57.6 mJ), lower gate charge (33.0 nC), and thermally optimized WPAK(3F) packaging-making it preferred for compact, high-reliability 24 V industrial power stages where layout space and transient stress are critical.
Availability
RJK03M0DPA-WS#J5A is available at Aetrix Electronics and suitable for industrial motor drives, 24 V DC-DC converters, power OR-ing circuits, and hot-swap modules requiring stable component supply and long-term production continuity.
Supply support for RJK03M0DPA-WS#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.
The RJK03M0DPA-WS#J5A belongs to Renesas' WPAK-series power MOSFET product line, designed specifically for high-current, high-efficiency switching in space-constrained industrial power systems operating from 12–30 V rails.
FAQ
What is the maximum gate-to-source voltage rating for RJK03M0DPA-WS#J5A?
The RJK03M0DPA-WS#J5A has a maximum gate-to-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this voltage risks permanent gate oxide damage. The device is rated for reliable operation with gate drive voltages from 4.5 V to 10 V, and gate leakage remains ≤ ±0.5 μA at the full ±20 V stress level.
Does RJK03M0DPA-WS#J5A support 3.3 V logic-level gate drive?
No-RJK03M0DPA-WS#J5A is not guaranteed to fully enhance at 3.3 V gate drive. Its gate threshold voltage range is 1.2–2.5 V, but RDS(on) is only specified at VGS = 4.5 V and 10 V. At 3.3 V, RDS(on) rises significantly beyond 1.9 mΩ, increasing conduction loss; use with 4.5 V or higher gate drive is required for rated performance.
What is the thermal resistance from channel to case for RJK03M0DPA-WS#J5A?
The channel-to-case thermal resistance (θch-c) of RJK03M0DPA-WS#J5A is 2.5 °C/W, measured at Tc = 25 °C. This value assumes proper soldering of the exposed drain pad to ≥25 mm² of 2 oz copper with thermal vias. It enables 50 W continuous power dissipation before reaching the 150 °C maximum channel temperature.
Is RJK03M0DPA-WS#J5A suitable for avalanche operation?
Yes-RJK03M0DPA-WS#J5A is characterized for unclamped inductive switching with an avalanche energy rating (EAS) of 57.6 mJ at Tch = 25 °C and Rg ≥ 50 Ω. This makes it suitable for applications like motor drive freewheeling or relay snubbing where inductive energy must be absorbed internally without external clamping components.
What is the body diode forward voltage of RJK03M0DPA-WS#J5A at 65 A?
The body diode forward voltage (VDF) of RJK03M0DPA-WS#J5A is 0.83 V (typical) and 1.08 V (max) at IF = 65 A and VGS = 0 V, as specified in the Electrical Characteristics table. This low VDF supports efficient freewheeling in synchronous rectifier and half-bridge configurations.
RJK03M0DPA-WS#J5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK03M0DPA-WS#J5A FAQ
1.How can I place an order for RJK03M0DPA-WS#J5A through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK03M0DPA-WS#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK03M0DPA-WS#J5A reliable?
The price and inventory of RJK03M0DPA-WS#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03M0DPA-WS#J5A is usually 5 days.
3.What payment methods are accepted for RJK03M0DPA-WS#J5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03M0DPA-WS#J5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK03M0DPA-WS#J5A?
RJK03M0DPA-WS#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK03M0DPA-WS#J5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK03M0DPA-WS#J5A?
For technical support, including RJK03M0DPA-WS#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03M0DPA-WS#J5A requirements.
6.How does Aetrix verify that RJK03M0DPA-WS#J5A is sourced from the original manufacturer or authorized distributors?
All RJK03M0DPA-WS#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03M0DPA-WS#J5A meets industry standards.
7.What is the process for return or replacement of RJK03M0DPA-WS#J5A?
All RJK03M0DPA-WS#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK03M0DPA-WS#J5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK03M0DPA-WS#J5A part is unused and in its original packaging.
Return procedure for RJK03M0DPA-WS#J5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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