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Renesas RJK03M6DNS-00#J5
- Part No.:
- RJK03M6DNS-00#J5
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
RJK03M6DNS-00#J5.pdf
- Description:
- MOSFET N-CH 30V 16A 8HWSON
- Quantity:
- Payment:
- Shipping:
Inventory:25,000
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Product details
Overview
RJK03M6DNS-00#J5 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in compact power supplies. It delivers 7.6 mΩ typical RDS(on) at VGS = 10 V, supports 4.5 V logic-level gate drive, and handles 16 A continuous drain current with 30 V VDSS, enabling use in 24 V industrial motor drivers and USB-C PD power path switches.
For engineers reviewing the RJK03M6DNS-00#J5 datasheet, RJK03M6DNS-00#J5 pinout, RJK03M6DNS-00#J5 application, or RJK03M6DNS-00#J5 equivalent, key selection criteria include low gate charge (7.1 nC), fast switching (2.8 ns td(on)), thermal resistance (10.0 °C/W), body diode recovery time (8.1 ns), and HWSON-8 package compatibility with high-density PCB layouts.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in synchronous buck converters and hot-swap circuits. Its 4.5 V gate threshold enables direct interfacing with 5 V microcontrollers and PWM controllers without level-shifting.
The device integrates a robust body diode with 0.84 V forward voltage at 16 A and 8.1 ns reverse recovery time, supporting efficient freewheeling in inductive loads. Thermal design is anchored to its 10.0 °C/W channel-to-case impedance and 150 °C maximum channel temperature rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 24 V rail applications with margin against transients |
| RDS(on) @ VGS = 10 V | 7.6 mΩ typ. - Enables <1.2 W conduction loss at 16 A, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 9.5 mΩ typ. - Ensures full enhancement with standard 5 V logic outputs |
| Qg | 7.1 nC - Minimizes gate driver power and switching losses in high-frequency (>500 kHz) converters |
| tr/tf | 1.7 ns / 3.5 ns - Supports clean edge control and reduced EMI in noise-sensitive systems |
| θch-c | 10.0 °C/W - Allows direct thermal coupling to PCB copper pour for passive cooling in space-constrained designs |
| VGS(off) | 1.2–2.5 V - Provides stable turn-off margin against noise in noisy industrial environments |
Pinout & Package
Package: HWSON-8 (RENESAS code PWSN0008JB-A), 2.9 mm × 3.1 mm × 0.8 mm, exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node tied to ground or low-side reference; electrically and thermally connected to exposed pad via internal metal |
| 4 | Gate | Control input requiring ≤0.5 µA leakage; driven by 4.5–10 V logic; gate resistance 1.55 Ω typ. limits ringing |
| 5, 6, 7, 8 | Drain | High-current output node; all four pins bonded to single internal drain structure and exposed pad for minimal inductance and thermal resistance |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed enhancement at VGS = 4.5 V enables direct interface with MCU GPIOs and 5 V PWM controllers without external level shifters |
| Low Qgd/Qg ratio | 2.0/7.1 nC = 0.28 - Reduces Miller effect, improving hard-switching robustness and dv/dt immunity |
| Fast body diode recovery | trr = 8.1 ns - Minimizes reverse recovery loss and shoot-through risk in synchronous rectification |
| Pb-free & halogen-free | Complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS Directive 2011/65/EU |
| High-density mounting | HWSON-8 footprint occupies 8.99 mm² - 40% smaller than SO-8, enabling >2× power density in POL converters |
Applications
| DC-DC Synchronous Buck Converter | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Primary high-side switch in 12–24 V input, 3.3–12 V output buck converter for FPGA or SoC core rails. IC Role / Device Role / Timing Role: High-side power switch controlled by external PWM controller; operates at 300–1000 kHz with precise dead-time management. Use Value: 7.6 mΩ RDS(on) and 7.1 nC Qg reduce total power loss by ≥18% vs. comparable 12 mΩ MOSFETs at 10 A, extending battery life in portable test equipment. |
Use Scenario: Load switch enabling/disabling 20 V/5 A USB-C power path in docking stations and monitors. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power switch with integrated overcurrent protection via external sense resistor. Use Value: 4.5 V gate drive allows direct control from USB-C PD controller GPIOs; 16 A rating supports 100 W PPS negotiation with 25% derating margin. |
| Industrial Motor Driver Half-Bridge | Hot-Swap Controller for 24 V Backplanes |
Use Scenario: Low-side switch in H-bridge driving 24 V brushed DC motors in PLC I/O modules. IC Role / Device Role / Timing Role: Low-side switching element commutated at ≤20 kHz; body diode conducts flyback current during PWM off-time. Use Value: 0.84 V VDF and 8.1 ns trr minimize freewheeling loss and EMI generation, reducing need for snubbers in EMC-critical factory automation gear. |
Use Scenario: Inrush current limiter and fault isolation switch for 24 V distributed power backplanes in telecom shelf systems. IC Role / Device Role / Timing Role: Controlled turn-on switch with external current-sense amplifier and comparator for soft-start and overcurrent shutdown. Use Value: 64 A peak drain current rating accommodates 10× inrush surges during board insertion; 10.0 °C/W θch-c ensures reliable operation under sustained 12 A load conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RJK0305DPP-00-J5 | RDS(on) = 6.2 mΩ @ 10 V; higher Qg = 9.5 nC; same HWSON-8 package | Better conduction loss but slower switching; suited for <300 kHz applications where efficiency > speed | Select RJK0305DPP-00-J5 when optimizing for lowest steady-state loss in fixed-frequency converters |
| Infineon BSC014N04LS6 | RDS(on) = 1.4 mΩ @ 10 V; larger PQFN 3.3×3.3 mm package; 40 V VDSS | Higher voltage rating and lower RDS(on) but incompatible footprint; requires PCB redesign | Choose BSC014N04LS6 only if upgrading to 40 V system voltage and accepting layout change |
Compared with RJK03M6DNS-00#J5, RJK0305DPP-00-J5 trades 25% lower RDS(on) for 34% higher gate charge, increasing switching loss above 500 kHz; BSC014N04LS6 offers superior performance but mandates mechanical redesign due to non-interchangeable package and pinout.
Availability
RJK03M6DNS-00#J5 is available at Aetrix Electronics and suitable for industrial motor drives, USB-C power delivery systems, and high-density DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for RJK03M6DNS-00#J5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK03M6DNS-00#J5 belongs to Renesas' "Power MOSFET" product line, engineered for high-efficiency, high-reliability power switching in space-constrained industrial and computing applications.
FAQ
What is the maximum continuous drain current rating for RJK03M6DNS-00#J5?
The RJK03M6DNS-00#J5 is rated for 16 A continuous drain current (ID) at Tc = 25°C. This rating assumes proper PCB thermal design using the exposed drain pad. At elevated case temperatures, derating applies per the "Power vs. Temperature Derating" curve on page 3 of the datasheet, dropping to ~8 A at Tc = 100°C. The device also supports 64 A pulsed current for ≤10 µs at 1% duty cycle.
Does RJK03M6DNS-00#J5 support 3.3 V logic-level gate drive?
No, the RJK03M6DNS-00#J5 is not guaranteed to fully enhance with 3.3 V gate drive. Its gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, and RDS(on) is specified only at VGS = 4.5 V and 10 V. At 3.3 V, conduction loss increases significantly - typical RDS(on) rises above 15 mΩ - making it unsuitable for reliable 3.3 V control without external gate boosting.
What is the thermal resistance from channel to case (θch-c) for RJK03M6DNS-00#J5?
The RJK03M6DNS-00#J5 has a channel-to-case thermal resistance (θch-c) of 10.0 °C/W, measured under Tc = 25°C conditions. This value reflects heat transfer from the silicon die directly to the exposed drain pad, which must be soldered to a large PCB copper area for effective thermal dissipation. It does not include PCB-to-ambient resistance.
Can RJK03M6DNS-00#J5 be used in avalanche mode?
Yes, the RJK03M6DNS-00#J5 is rated for repetitive avalanche operation with IAP = 8.5 A and EAS = 7.2 mJ at Tch = 25°C. Avalanche energy decreases with rising channel temperature, as shown in the "Maximum Avalanche Energy vs. Channel Temperature Derating" graph on page 4. Designers must ensure gate drive remains active during avalanche events and limit single-pulse energy to avoid exceeding EAS.
Is RJK03M6DNS-00#J5 pin-compatible with other HWSON-8 MOSFETs?
The RJK03M6DNS-00#J5 uses the standard HWSON-8 footprint (JEITA code P-HWSON8-2.9x3.1-0.65), but pin compatibility depends on internal configuration. Its pinout - pins 1–3 = Source, pin 4 = Gate, pins 5–8 = Drain - matches common HWSON-8 N-channel devices. However, always verify gate-source voltage limits, RDS(on), and thermal characteristics before substitution, as electrical behavior may differ despite identical packaging.
RJK03M6DNS-00#J5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 9.2mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 7.1 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1190 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 12.5W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HWSON (3.3x3.3)
RJK03M6DNS-00#J5 FAQ
1.How can I place an order for RJK03M6DNS-00#J5 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK03M6DNS-00#J5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK03M6DNS-00#J5 reliable?
The price and inventory of RJK03M6DNS-00#J5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03M6DNS-00#J5 is usually 5 days.
3.What payment methods are accepted for RJK03M6DNS-00#J5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03M6DNS-00#J5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK03M6DNS-00#J5?
RJK03M6DNS-00#J5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK03M6DNS-00#J5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK03M6DNS-00#J5?
For technical support, including RJK03M6DNS-00#J5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03M6DNS-00#J5 requirements.
6.How does Aetrix verify that RJK03M6DNS-00#J5 is sourced from the original manufacturer or authorized distributors?
All RJK03M6DNS-00#J5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03M6DNS-00#J5 meets industry standards.
7.What is the process for return or replacement of RJK03M6DNS-00#J5?
All RJK03M6DNS-00#J5 units undergo pre-shipment inspection (PSI). If there is an issue with RJK03M6DNS-00#J5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK03M6DNS-00#J5 part is unused and in its original packaging.
Return procedure for RJK03M6DNS-00#J5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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