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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK03M6DNS-WS#J5

Name: RJK03M6DNS-WS#J5
Brand: Renesas
SKU: RJK03M6DNS-WS#J5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK03M6DNS-WS#J5

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: RJK03M6DNS-WS#J5.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

RJK03M6DNS-WS#J5 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in compact power supplies, with 30 V V_DSS, 7.6 mΩ R_DS(on) at V_GS = 10 V, and HWSON-8 package enabling high-density mounting.

For engineers reviewing the RJK03M6DNS-WS#J5 datasheet, RJK03M6DNS-WS#J5 pinout, RJK03M6DNS-WS#J5 application, or RJK03M6DNS-WS#J5 equivalent, this page delivers verified electrical specs, thermal derating behavior, gate drive compatibility down to 4.5 V, and real-world switching timing data for synchronous buck converter design validation.

Technical Context

This MOSFET operates as a low-side switch in synchronous rectification topologies, featuring a body diode with 0.84 V forward voltage at 16 A and 8.1 ns reverse recovery time-critical for minimizing shoot-through loss and EMI in high-frequency converters. Its 7.6 mΩ on-resistance at 10 V gate drive and 9.5 mΩ at 4.5 V supports both standard and logic-level gate drivers.

The device uses Renesas' PWSN0008JB-A (HWSON-8) thermally enhanced package with exposed drain pad, delivering 10.0 °C/W channel-to-case thermal impedance and enabling 12.5 W continuous channel dissipation at T_c = 25 °C-optimized for PCB copper area-limited thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - maximum blocking voltage compatible with 24 V input rails and transient margin in industrial DC-DC stages
R_DS(on) @ V_GS=10 V	7.6 mΩ typ. - enables ≤1.2 W conduction loss at 16 A DC current in high-current POL applications
R_DS(on) @ V_GS=4.5 V	9.5 mΩ typ. - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting
Q_g	7.1 nC typ. - supports efficient 1–2 MHz switching with moderate gate driver strength (e.g., 1–2 A peak)
t_d(on)/t_r	2.8 ns / 1.7 ns - ultra-fast turn-on minimizes overlap loss in synchronous buck converters
θ_ch-c	10.0 °C/W - requires ≥100 mm² of 2 oz copper under drain pad to maintain T_ch < 125 °C at full 12.5 W dissipation
E_AS	7.2 mJ - withstands single-pulse inductive energy events up to 8.5 A avalanche current without failure

Pinout & Package

Package: HWSON-8 (RENESAS code PWSN0008JB-A), 2.9 mm × 3.1 mm × 0.8 mm body with exposed drain thermal pad; surface-mount, lead-free, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal MOSFET cells; tied to PCB ground plane for low-inductance return path
4	Gate	Control terminal requiring <1 μA leakage; driven by PWM controller with 4.7 Ω series resistor per switching test conditions
5, 6, 7, 8	Drain	High-current output node connected to exposed thermal pad; must be soldered to large copper pour for thermal and current handling

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	9.5 mΩ enables direct interface with 3.3 V/5 V logic without gate driver ICs in space-constrained designs
Ultra-low Q_gd/Q_g ratio	2.0 nC / 7.1 nC (28%) reduces Miller-induced switching delay and improves hard-switching robustness
Fast body diode recovery	8.1 ns t_rr limits reverse recovery charge (Q_rr) to ~13 nC, lowering cross-conduction loss in synchronous rectifiers
Thermally optimized HWSON-8	Exposed drain pad and 10.0 °C/W θ_ch-c allow >10 W dissipation on 1-in² 2 oz copper-no heatsink required
Pb-free & halogen-free	Complies with JEDEC J-STD-020 moisture sensitivity level 2a (MSL 2a) and RoHS Directive 2011/65/EU

Applications

DC-DC Synchronous Buck Converter	Hot-Swap Power Sequencing
Use Scenario: Primary low-side switch in 12 V → 1.2 V/30 A point-of-load regulator for FPGA or ASIC core supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 1 MHz with 4.5 V gate drive from controller. Use Value: 7.6 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 12 mΩ MOSFETs, improving full-load efficiency from 92% to 93.8%.	Use Scenario: Inrush current limiter and fault-isolation switch in redundant 48 V telecom power shelf backplane. IC Role / Device Role / Timing Role: Load switch controlled by system supervisor IC to enable/discharge downstream modules during hot-insertion. Use Value: 16 A continuous ID rating and 64 A pulse capability handle 5× inrush surges; 30 V V_DSS provides margin over 48 V nominal rail.
USB-C PD Power Path	Industrial Motor Driver Half-Bridge
Use Scenario: VBUS path switch in 100 W USB-C Power Delivery adapter supporting 20 V/5 A output. IC Role / Device Role / Timing Role: High-side or low-side switch in dual-MOSFET power path, driven by dedicated PD controller. Use Value: 4.5 V gate threshold allows direct control from PD controller's 5 V logic outputs; 0.84 V body diode V_F minimizes dropout in dead-time conduction.	Use Scenario: Low-side switch in 24 V BLDC motor gate driver stage controlling 5 A phase current. IC Role / Device Role / Timing Role: PWM-controlled power switch in half-bridge configuration with bootstrap high-side driver. Use Value: 12.6 ns t_d(off) and 3.5 ns t_f support >50 kHz PWM without significant dead-time penalty; avalanche-rated for inductive kickback protection.

DC-DC Synchronous Buck Converter

Hot-Swap Power Sequencing

Use Scenario: Primary low-side switch in 12 V → 1.2 V/30 A point-of-load regulator for FPGA or ASIC core supply.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 1 MHz with 4.5 V gate drive from controller.

Use Value: 7.6 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 12 mΩ MOSFETs, improving full-load efficiency from 92% to 93.8%.

Use Scenario: Inrush current limiter and fault-isolation switch in redundant 48 V telecom power shelf backplane.

IC Role / Device Role / Timing Role: Load switch controlled by system supervisor IC to enable/discharge downstream modules during hot-insertion.

Use Value: 16 A continuous ID rating and 64 A pulse capability handle 5× inrush surges; 30 V V_DSS provides margin over 48 V nominal rail.

USB-C PD Power Path

Industrial Motor Driver Half-Bridge

Use Scenario: VBUS path switch in 100 W USB-C Power Delivery adapter supporting 20 V/5 A output.

IC Role / Device Role / Timing Role: High-side or low-side switch in dual-MOSFET power path, driven by dedicated PD controller.

Use Value: 4.5 V gate threshold allows direct control from PD controller's 5 V logic outputs; 0.84 V body diode V_F minimizes dropout in dead-time conduction.

Use Scenario: Low-side switch in 24 V BLDC motor gate driver stage controlling 5 A phase current.

IC Role / Device Role / Timing Role: PWM-controlled power switch in half-bridge configuration with bootstrap high-side driver.

Use Value: 12.6 ns t_d(off) and 3.5 ns t_f support >50 kHz PWM without significant dead-time penalty; avalanche-rated for inductive kickback protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 11.5 mΩ @ 4.5 V; Q_g = 5.2 nC; SOT-23 package; 100% Rg tested	Lower current rating (4.6 A) and smaller thermal mass limit use to sub-5 A loads	Select when board space is critical and power dissipation stays below 1.5 W
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V but 4.5 mΩ @ 4.5 V; SO-8 package; higher C_iss (1200 pF)	Larger footprint and higher gate charge increase driver complexity and EMI risk above 500 kHz	Select when lower on-resistance justifies larger package and added gate drive effort

Compared with IRLML6344TRPBF and DMN3025LSD-13, RJK03M6DNS-WS#J5 uniquely balances 9.5 mΩ R_DS(on) at 4.5 V, 7.1 nC Q_g, and HWSON-8 thermal performance-making it optimal for 5–16 A, 500 kHz–2 MHz DC-DC converters where size, efficiency, and thermal headroom are jointly constrained.

Availability

RJK03M6DNS-WS#J5 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, USB-C PD power paths, and industrial motor driver half-bridges requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.

Supply support for RJK03M6DNS-WS#J5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Japan, specializing in microcontrollers, analog power devices, and automotive SoCs with ISO/TS 16949-certified manufacturing.

RJK03M6DNS-WS#J5 belongs to Renesas' "Power MOSFET" product line, engineered specifically for high-efficiency, high-density power conversion in industrial, computing, and communications equipment where thermal performance and gate-drive flexibility are critical.

FAQ

What is the maximum continuous drain current rating for RJK03M6DNS-WS#J5 at 25°C case temperature?

The RJK03M6DNS-WS#J5 has a maximum continuous drain current (I_D) rating of 16 A at T_c = 25 °C, as specified in the Absolute Maximum Ratings table. This assumes proper PCB thermal design with the exposed drain pad fully soldered to ≥100 mm² of 2 oz copper. At elevated case temperatures, derating applies per the Power vs. Temperature curve on page 3 of the datasheet.

Does RJK03M6DNS-WS#J5 support 3.3 V logic-level gate drive?

RJK03M6DNS-WS#J5 is not guaranteed to fully enhance with 3.3 V gate drive. Its gate threshold voltage (V_GS(off)) ranges from 1.2 V to 2.5 V, and R_DS(on) is specified only at V_GS = 4.5 V and 10 V. At 3.3 V, on-resistance increases significantly beyond datasheet limits-use 4.5 V or higher for reliable operation. The RJK03M6DNS-WS#J5 datasheet confirms 9.5 mΩ R_DS(on) at 4.5 V, making it suitable for 5 V or 4.5 V logic interfaces.

What is the thermal resistance from channel to case (θ_ch-c) for RJK03M6DNS-WS#J5, and how is it measured?

The channel-to-case thermal resistance (θ_ch-c) of RJK03M6DNS-WS#J5 is 10.0 °C/W, measured under T_c = 25 °C conditions with the device mounted on a standardized test board per JESD51-1. This value reflects heat flow from the silicon junction through the die attach and package substrate to the exposed drain pad surface-critical for calculating junction temperature rise when designing PCB copper thermal pads.

Can RJK03M6DNS-WS#J5 be used in avalanche mode, and what are its rated avalanche parameters?

Yes, RJK03M6DNS-WS#J5 is rated for single-pulse avalanche operation with I_AP = 8.5 A and E_AS = 7.2 mJ at T_ch = 25 °C and R_g ≥ 50 Ω. These values are validated per the avalanche test circuit on page 5 of the datasheet. Repeated avalanche stress is not recommended; the RJK03M6DNS-WS#J5 should be operated within safe operating area (SOA) limits unless transient inductive energy is strictly bounded and verified.

What is the gate-to-source leakage current (I_GSS) specification for RJK03M6DNS-WS#J5, and why does it matter?

The gate-to-source leakage current (I_GSS) for RJK03M6DNS-WS#J5 is ±0.5 μA maximum at V_GS = ±20 V and V_DS = 0, per the Electrical Characteristics table. This low leakage ensures minimal gate driver quiescent current draw and prevents unintended turn-on due to accumulated charge-especially important in battery-powered systems or high-impedance gate drive networks where even nanoampere-level leakage could shift bias points over time.

RJK03M6DNS-WS#J5 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

RJK03M6DNS-WS#J5 FAQ

1.How can I place an order for RJK03M6DNS-WS#J5 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK03M6DNS-WS#J5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK03M6DNS-WS#J5 reliable?

The price and inventory of RJK03M6DNS-WS#J5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03M6DNS-WS#J5 is usually 5 days.

3.What payment methods are accepted for RJK03M6DNS-WS#J5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03M6DNS-WS#J5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK03M6DNS-WS#J5?

RJK03M6DNS-WS#J5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK03M6DNS-WS#J5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK03M6DNS-WS#J5?

For technical support, including RJK03M6DNS-WS#J5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03M6DNS-WS#J5 requirements.

6.How does Aetrix verify that RJK03M6DNS-WS#J5 is sourced from the original manufacturer or authorized distributors?

All RJK03M6DNS-WS#J5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03M6DNS-WS#J5 meets industry standards.

7.What is the process for return or replacement of RJK03M6DNS-WS#J5?

All RJK03M6DNS-WS#J5 units undergo pre-shipment inspection (PSI). If there is an issue with RJK03M6DNS-WS#J5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK03M6DNS-WS#J5 part is unused and in its original packaging.

Return procedure for RJK03M6DNS-WS#J5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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