Renesas RJK03P6DPA-00#J5A

Overview

RJK03P6DPA-00#J5A from Renesas Electronics is a dual N-channel power MOSFET with integrated Schottky barrier diode in a single WPAK-D(3) package. It integrates two discrete MOSFETs - MOS1 rated 30 V / 15 A / 9.4 mΩ max at V_GS = 10 V, and MOS2 rated 30 V / 45 A / 2.4 mΩ max at V_GS = 10 V - enabling high-efficiency synchronous rectification and bidirectional switching in DC-DC converters and motor drivers.

For engineers reviewing the RJK03P6DPA-00#J5A datasheet, RJK03P6DPA-00#J5A pinout, RJK03P6DPA-00#J5A application, or RJK03P6DPA-00#J5A equivalent, key selection criteria include verified dual-channel R_DS(on) values at 4.5 V gate drive, integrated SBD for reduced reverse recovery loss, thermal resistance (θ_ch–c = 12.5°C/W), and WPAK-D(3) package compatibility with high-density PCB layouts.

Technical Context

This device implements a monolithic dual-die structure with isolated channel control: MOS1 supports low-current, fast-switching roles (e.g., high-side switch in buck converters), while MOS2 handles high-current paths (e.g., low-side synchronous rectifier). Both channels share common source terminals (pins 5–7, 9) and feature independent gate terminals (pins 1, 8) and drain terminals (pins 2–4, 9).

The integrated Schottky Barrier Diode connects between pins 7 (S1/D2) and 9 (D1), providing unidirectional forward conduction with VF ≤ 0.40 V at IF = 2 A and trr ≤ 9.4 ns at IF = 45 A. Gate drive compatibility is confirmed for 4.5 V logic-level operation across both channels, with Qg of 7.1 nC (MOS1) and 29.4 nC (MOS2) under standardized test conditions.

Key Specifications

Pinout & Package

Package: WPAK-D(3), Renesas code PWSN0008DD-B - thermally enhanced surface-mount package with exposed drain pad, 8.0 mm × 5.1 mm footprint, 1.1 mm height, Sn plating, 0.07 g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET with integrated diode applications.

Compared with RQ3E080AT and SI7850DP, RJK03P6DPA-00#J5A uniquely combines dual-channel integration, verified 4.5 V gate drive, and monolithic Schottky diode in a thermally optimized WPAK-D(3) package - reducing total solution size by ≥35% and eliminating two external components versus alternatives.

Availability

RJK03P6DPA-00#J5A is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and industrial PLC output modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for RJK03P6DPA-00#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with global R&D and manufacturing infrastructure.

The RJK03P6DPA-00#J5A belongs to Renesas' Power MOSFET product line, designed specifically for high-efficiency, high-density power conversion in industrial and consumer equipment where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for each channel of the RJK03P6DPA-00#J5A?

The RJK03P6DPA-00#J5A specifies 15 A for MOS1 and 45 A for MOS2 under T_c = 25°C conditions. These ratings assume proper PCB copper area for heat dissipation and are derated linearly above 25°C case temperature per the published P_ch vs. T_c curves on pages 4 and 7 of the R07DS0905EJ0110 datasheet. Actual usable current depends on layout, ambient temperature, and airflow.

Does the RJK03P6DPA-00#J5A support 3.3 V logic-level gate drive?

The RJK03P6DPA-00#J5A is characterized down to V_GS = 4.5 V, with R_DS(on) values of 12.6 mΩ (MOS1) and 3.2 mΩ (MOS2) guaranteed at that level. At 3.3 V, turn-on is not assured across process/voltage/temperature corners; Renesas does not specify parameters below 4.5 V. For robust 3.3 V operation, a gate driver with bootstrapped or charge-pump output is recommended for the RJK03P6DPA-00#J5A.

How is the Schottky Barrier Diode connected internally in the RJK03P6DPA-00#J5A?

In the RJK03P6DPA-00#J5A, the integrated Schottky Barrier Diode connects between pin 7 (S1/D2 - anode) and pin 9 (D1 - cathode). This configuration places the SBD in anti-parallel with MOS1's intrinsic body diode, providing lower forward voltage (VF ≤ 0.40 V) and faster recovery (trr ≤ 9.4 ns) than the MOSFET's body diode - critical for minimizing losses in synchronous rectifier applications.

Can both MOSFET channels in the RJK03P6DPA-00#J5A be used simultaneously in a half-bridge configuration?

Yes - the RJK03P6DPA-00#J5A supports half-bridge use with MOS1 as high-side and MOS2 as low-side switch. Its common-source (pins 5–7, 9) and independent gate (pins 1, 8) topology enables standard bootstrap gate drive. However, the shared drain node (pin 9) requires careful PCB routing to avoid shoot-through risk; external gate resistors and dead-time control remain essential for safe operation of the RJK03P6DPA-00#J5A in this mode.

What is the thermal resistance from channel to case (θ_ch–c) for the RJK03P6DPA-00#J5A?

The RJK03P6DPA-00#J5A has a channel-to-case thermal resistance θ_ch–c of 12.5°C/W, measured under standard test conditions (JEDEC JESD51-14). This value applies to both MOS1 and MOS2 channels and is used to calculate junction temperature rise above case temperature: T_j = T_c + (P_diss × 12.5). The value assumes full solder coverage of the exposed drain pad to a 1-in² 2-oz copper plane.