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Renesas RJK03P6DPA-WS#J5A
- Part No.:
- RJK03P6DPA-WS#J5A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK03P6DPA-WS#J5A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,750
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Product details
Overview
RJK03P6DPA-WS#J5A from Renesas Electronics is a dual-channel N-channel power MOSFET with integrated Schottky barrier diode, designed for high-efficiency DC-DC conversion and motor drive stages. It delivers 30 V VDSS, 15 A continuous drain current (MOS1) and 45 A (MOS2), with RDS(on) as low as 9.4 mΩ (MOS1 @ 10 V) and 2.4 mΩ (MOS2 @ 10 V), enabling compact synchronous buck converters in industrial power supplies.
For engineers reviewing the RJK03P6DPA-WS#J5A datasheet, RJK03P6DPA-WS#J5A pinout, RJK03P6DPA-WS#J5A application, or RJK03P6DPA-WS#J5A equivalent, key selection criteria include dual-channel thermal coupling, gate-drive compatibility down to 4.5 V, built-in SBD for freewheeling path, and WPAK-D(3) package thermal performance under high-pulse-current conditions.
Technical Context
This device integrates two discrete N-channel MOSFETs-MOS1 (15 A/9.4 mΩ) and MOS2 (45 A/2.4 mΩ)-in a single WPAK-D(3) thermally enhanced package with shared source terminals (pins 5–7, 9). The internal Schottky barrier diode connects between MOS2's source and drain, supporting high-frequency synchronous rectification without external diode placement.
Both channels support 4.5 V gate drive, exhibit low Qg (7.1 nC for MOS1; 29.4 nC for MOS2), and feature fast switching (td(off) = 12.6 ns / 66.8 ns), optimized for 300–1000 kHz DC-DC topologies where conduction loss and reverse recovery are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for both MOS1 and MOS2, suitable for 24 V input rail systems with margin. |
| ID (MOS1/MOS2) | 15 A / 45 A - Continuous drain current at Tc = 25°C, defining channel sizing for primary/secondary-side switching in interleaved or multi-phase converters. |
| RDS(on) @ 10 V | 9.4 mΩ / 2.4 mΩ - On-resistance values directly determining conduction losses in high-current output stages. |
| Qg | 7.1 nC / 29.4 nC - Total gate charge dictating driver strength requirements and switching loss trade-offs at target frequency. |
| VGS(th) | 1.2–2.5 V - Gate threshold range ensuring reliable turn-on with standard logic-level drivers and noise immunity. |
| tr/tf | 1.7 ns / 3.5 ns (MOS1); 4.6 ns / 21.5 ns (MOS2) - Rise/fall times enabling sub-10 ns transition control in hard-switched topologies. |
| VF (SBD) | 0.40 V @ 2 A - Forward voltage of integrated Schottky diode, minimizing freewheeling loss versus silicon body diodes. |
Pinout & Package
Package: WPAK-D(3), JEITA code PWSN0008DD-B, 8-pin exposed-pad surface-mount package with 12.5°C/W junction-to-case thermal resistance (θch–c). Dimensions: 6.1 mm × 5.1 mm × 1.27 mm (max height), Sn-plated terminations, Pb-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 8 | Gate 1 (G1) / Gate 2 (G2) | Independent gate inputs for MOS1 and MOS2; require separate gate resistors for timing control and EMI suppression. |
| 2, 3, 4, 9 | Drain 1 (D1) / Drain 2 (D2) | High-current drain nodes; pins 2/3/4 serve MOS1 drain; pin 9 serves MOS2 drain and SBD anode (shared with MOS2 drain). |
| 5, 6, 7, 9 | Source 1 (S1) / Source 2 (S2) | Pins 5/6/7 are MOS1 source; pin 9 is MOS2 source and SBD cathode - electrically common to MOS2 source terminal. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky Barrier Diode | 0.40 V forward drop at 2 A enables efficient freewheeling in synchronous buck converters without layout overhead or parasitic inductance. |
| 4.5 V Gate Drive Compatibility | Guaranteed RDS(on) ≤ 12.6 mΩ (MOS1) and ≤ 3.2 mΩ (MOS2) at VGS = 4.5 V, supporting direct interface with 5 V microcontrollers and PWM controllers. |
| Thermally Optimized Dual-Channel Layout | Shared thermal pad and co-located MOS1/MOS2 die reduce board area by ~40% vs. discrete solutions while maintaining <150°C channel temperature rating. |
| Low-Qgd/Qgs Ratio | MOS1: Qgd/Qgs = 2.0/2.3 ≈ 0.87; MOS2: 10.0/9.6 ≈ 1.04 - improves Miller immunity and reduces risk of shoot-through during hard switching. |
Applications
| Industrial DC-DC Converters | Automotive Body Control Modules |
|---|---|
Use Scenario: 24 V input to 3.3/5/12 V point-of-load regulation in programmable logic controllers and I/O modules. IC Role / Device Role / Timing Role: Primary-side high-side switch (MOS2) and secondary-side synchronous rectifier (MOS1) in interleaved buck converter. Use Value: Dual-channel integration eliminates interconnect inductance between switches, reducing voltage spikes and improving efficiency by ≥1.2% at 20 A load. |
Use Scenario: Power distribution and load switching for lighting, window lift, and seat control in 12 V automotive subsystems. IC Role / Device Role / Timing Role: High-current load switch (MOS2) with integrated SBD for inductive kickback clamping during relay or motor de-energization. Use Value: Eliminates need for external flyback diode, saving 3.2 mm² PCB area and reducing BOM count by one component per channel. |
| Server VRMs | Brushless DC Motor Drivers |
Use Scenario: Multiphase CPU/GPU voltage regulator modules requiring tight current sharing and fast transient response. IC Role / Device Role / Timing Role: Low-RDS(on) phase-leg switch (MOS2) paired with MOS1 as dedicated high-speed sync rectifier in each phase. Use Value: 2.4 mΩ RDS(on) at 45 A enables <1.8 W conduction loss per phase at full load, supporting >92% peak efficiency. |
Use Scenario: Three-phase inverter stage for 24–48 V BLDC fans and pumps in HVAC and industrial automation. IC Role / Device Role / Timing Role: Half-bridge upper/lower switch pair (MOS2 + MOS1) per phase, leveraging shared source topology for simplified gate drive routing. Use Value: Integrated SBD provides intrinsic freewheeling path during PWM dead-time, eliminating cross-conduction risk and simplifying gate timing design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RJK03P6DPE-00-J5A | Same die, identical RDS(on), Qg, and pinout; differs only in tape-and-reel packaging (J5A vs. J5B) and RoHS compliance documentation. | No functional difference; suitable for identical designs requiring alternate sourcing or logistics flexibility. | Select when supply chain diversification or regional compliance documentation (e.g., EU REACH) is prioritized over Renesas branding. |
| Vishay SiZ340DT-T1-GE3 | Single-channel 30 V/60 A MOSFET (no integrated SBD); RDS(on) = 2.1 mΩ @ 10 V; requires external Schottky for freewheeling. | Lacks integrated diode and dual-channel topology - demands additional components and PCB space for equivalent functionality. | Choose only if discrete layout control, higher peak current headroom (>60 A), or vendor-specific qualification is required. |
Compared with RJK03P6DPA-WS#J5A, RJK03P6DPE-00-J5A offers identical electrical and thermal performance with packaging variation, while SiZ340DT-T1-GE3 trades integration for higher single-channel current rating but increases system complexity and footprint.
Availability
RJK03P6DPA-WS#J5A is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.
Supply support for RJK03P6DPA-WS#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with global R&D and manufacturing infrastructure supporting automotive, industrial, and infrastructure markets.
RJK03P6DPA-WS#J5A belongs to Renesas' Power MOSFET product line, engineered for high-density, high-efficiency power conversion in space-constrained industrial and automotive applications where thermal performance and integration reduce system cost.
FAQ
What is the maximum continuous drain current rating for each channel of the RJK03P6DPA-WS#J5A?
The RJK03P6DPA-WS#J5A specifies 15 A for MOS1 and 45 A for MOS2 at Tc = 25°C. These ratings assume proper PCB copper area (≥100 mm² per channel) and ambient airflow. Derating applies above 25°C case temperature per the power-vs-temperature curve on page 4 of the datasheet. The RJK03P6DPA-WS#J5A must not exceed its absolute maximum channel temperature of 150°C under any operating condition.
Does the RJK03P6DPA-WS#J5A support 3.3 V gate drive?
No - the RJK03P6DPA-WS#J5A is not characterized for reliable operation at 3.3 V gate drive. Its gate threshold voltage (VGS(off)) ranges from 1.2 V to 2.5 V, but RDS(on) is only guaranteed at VGS = 4.5 V and 10 V. At 3.3 V, conduction losses increase significantly due to incomplete enhancement; the RJK03P6DPA-WS#J5A requires minimum 4.5 V gate drive for specified performance.
How is the Schottky Barrier Diode connected internally in the RJK03P6DPA-WS#J5A?
The Schottky Barrier Diode in the RJK03P6DPA-WS#J5A is connected between the source (pin 9) and drain (pin 9) of MOS2 - i.e., anode tied to MOS2 drain, cathode tied to MOS2 source. This configuration allows it to conduct reverse current during MOS2 off-time in buck or half-bridge topologies. The RJK03P6DPA-WS#J5A does not provide a separate SBD terminal; its function is fully integrated and non-isolatable.
What is the thermal resistance (θch–c) of the RJK03P6DPA-WS#J5A package?
The RJK03P6DPA-WS#J5A has a junction-to-case thermal resistance (θch–c) of 12.5°C/W, measured from channel to the bottom thermal pad under standard test conditions (Tc = 25°C). This value assumes full-solder coverage of the exposed pad to a 100 mm² copper pour with 2 oz. thickness. The RJK03P6DPA-WS#J5A's WPAK-D(3) package relies on this thermal path for safe operation at rated current.
Can the RJK03P6DPA-WS#J5A be used in avalanche mode?
Yes - the RJK03P6DPA-WS#J5A is rated for unclamped inductive switching with EAS = 7.23 mJ (MOS1) and 36.1 mJ (MOS2) at Tch = 25°C, provided Rg ≥ 50 Ω and duty cycle < 0.1%. However, avalanche operation is not recommended for continuous use; the RJK03P6DPA-WS#J5A is intended for normal switching applications with external protection or snubbers where inductive energy exceeds these limits.
RJK03P6DPA-WS#J5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK03P6DPA-WS#J5A FAQ
1.How can I place an order for RJK03P6DPA-WS#J5A through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK03P6DPA-WS#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK03P6DPA-WS#J5A reliable?
The price and inventory of RJK03P6DPA-WS#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03P6DPA-WS#J5A is usually 5 days.
3.What payment methods are accepted for RJK03P6DPA-WS#J5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03P6DPA-WS#J5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK03P6DPA-WS#J5A?
RJK03P6DPA-WS#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK03P6DPA-WS#J5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK03P6DPA-WS#J5A?
For technical support, including RJK03P6DPA-WS#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03P6DPA-WS#J5A requirements.
6.How does Aetrix verify that RJK03P6DPA-WS#J5A is sourced from the original manufacturer or authorized distributors?
All RJK03P6DPA-WS#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03P6DPA-WS#J5A meets industry standards.
7.What is the process for return or replacement of RJK03P6DPA-WS#J5A?
All RJK03P6DPA-WS#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK03P6DPA-WS#J5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK03P6DPA-WS#J5A part is unused and in its original packaging.
Return procedure for RJK03P6DPA-WS#J5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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