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Renesas RJK03P9DPA-WS#J5A
- Part No.:
- RJK03P9DPA-WS#J5A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK03P9DPA-WS#J5A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
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Inventory:2,900
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Product details
Overview
RJK03P9DPA-WS#J5A from Renesas Electronics is a dual-channel N-channel power MOSFET with integrated Schottky barrier diode in a single WPAK-D(3) package. It integrates MOS1 (30 V, 20 A, 7.0 mΩ max RDS(on) at VGS = 10 V) and MOS2 (30 V, 50 A, 2.2 mΩ max RDS(on) at VGS = 10 V), enabling high-efficiency synchronous rectification and bidirectional switching in DC/DC converters and motor drivers.
For engineers reviewing the RJK03P9DPA-WS#J5A datasheet, RJK03P9DPA-WS#J5A pinout, RJK03P9DPA-WS#J5A application, or RJK03P9DPA-WS#J5A equivalent, key selection criteria include verified dual-channel on-resistance specs, gate drive compatibility down to 4.5 V, avalanche energy ratings (14.4 mJ / 48 mJ), and thermal derating behavior across case temperatures up to 150°C.
Technical Context
This device implements two independent N-channel enhancement-mode MOSFETs sharing a common source terminal for MOS2 and drain terminal for MOS1, with an integrated Schottky barrier diode connected between MOS2's source and drain. Its dual-die construction supports asymmetric current handling-MOS1 optimized for control-side switching with lower gate charge (7.7 nC), MOS2 for high-current power path conduction with higher channel dissipation (35 W at Tc = 25°C).
The integrated SBD enables fast reverse recovery (trr = 10.0 ns at IF = 50 A) and low forward voltage (VF = 0.40 V at IF = 2 A), eliminating external catch diodes in buck and half-bridge topologies. Gate threshold voltages (1.2–2.5 V) and 4.5 V logic-level drive capability support direct interfacing with standard microcontroller GPIOs without level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V for both MOS1 and MOS2 - defines maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on) max | 7.0 mΩ (MOS1 @ 10 A, 10 V), 2.2 mΩ (MOS2 @ 25 A, 10 V) - determines conduction loss and thermal rise under load |
| ID continuous | 20 A (MOS1), 50 A (MOS2) - sets maximum steady-state current per channel at Tc = 25°C |
| Qg | 7.7 nC (MOS1), 36.7 nC (MOS2) - governs gate driver power requirement and switching speed trade-off |
| EAS | 14.4 mJ (MOS1), 48 mJ (MOS2) - quantifies single-pulse avalanche ruggedness during inductive turn-off |
| VF (SBD) | 0.40 V @ 2 A - enables efficient freewheeling with minimal forward drop and no minority-carrier storage delay |
| tr/tf | 3.4 ns / 3.8 ns (MOS1), 6.0 ns / 24.8 ns (MOS2) - defines minimum controllable PWM frequency and EMI profile |
Pinout & Package
Package: WPAK-D(3), Renesas code PWSN0008DD-B, surface-mount, thermally enhanced leadframe with exposed drain pad. Dimensions: 6.1 mm × 5.1 mm × 0.85 mm max, mass 0.07 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 8 | G1, G2 | Independent gate inputs for MOS1 and MOS2 - require separate drive signals; not internally tied |
| 2, 3, 4, 9 | D1, D2 | Drain terminals - Pin 9 serves as shared drain node for MOS2 and SBD anode; Pins 2–4 are MOS1 drains |
| 5, 6, 7, 9 | S1, S2 | Source terminals - Pin 9 is common source/drain node; Pins 5–7 are MOS1 sources; MOS2 source is internal to die but accessible via pins 5–7 and 9 |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully at VGS = 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V controller systems |
| Integrated Schottky diode | 0.40 V forward drop at 2 A - reduces freewheeling loss and eliminates reverse recovery tail current in buck converters |
| Asymmetric dual-channel design | MOS1 (20 A) + MOS2 (50 A) - enables optimized layout for control and power legs in synchronous rectifiers and H-bridges |
| Pb-free & halogen-free | Complies with JEDEC J-STD-020 and RoHS Directive - supports lead-free reflow assembly and environmental compliance |
| High-density mounting | WPAK-D(3) footprint occupies ~31 mm² - saves PCB area versus discrete dual-MOSFET + diode solutions |
Applications
| DC/DC Buck Converter | Automotive Body Control Module |
|---|---|
|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in infotainment head units. IC Role / Device Role / Timing Role: RJK03P9DPA-WS#J5A functions as synchronous rectifier pair - MOS1 as high-side switch, MOS2 as low-side switch with integrated SBD for freewheeling. Use Value: Achieves >94% efficiency at 20 A output by minimizing RDS(on) loss (2.2 mΩ) and eliminating diode reverse recovery loss. |
Use Scenario: Power distribution and load switching for LED lighting, window lift, and mirror controls. IC Role / Device Role / Timing Role: RJK03P9DPA-WS#J5A operates as dual-channel protected load switch - MOS1 controls auxiliary loads, MOS2 handles high-current motors with built-in avalanche energy margin. Use Value: Withstands 48 mJ avalanche energy and 50 A peak current, enabling robust operation during battery dump transients and motor stall conditions. |
| Industrial Motor Driver | Server VRM Phase Block |
|
Use Scenario: Half-bridge gate drive stage for 24 V BLDC fans and small pumps in PLC I/O modules. IC Role / Device Role / Timing Role: RJK03P9DPA-WS#J5A serves as phase-leg pair - MOS2 drives motor winding, MOS1 provides complementary switching with matched timing characteristics. Use Value: Low Qgd/Qgs ratio (2.0 nC / 3.3 nC for MOS1) ensures clean commutation and reduced shoot-through risk at 100 kHz PWM. |
Use Scenario: Multiphase buck converter delivering 50–100 A to CPU/GPU cores in enterprise servers. IC Role / Device Role / Timing Role: RJK03P9DPA-WS#J5A deployed per phase - MOS2 handles main current path (50 A), MOS1 manages gate drive return and sensing paths. Use Value: Dual-die thermal coupling and 35 W channel dissipation allow sustained 50 A operation with <15°C temperature rise at Tc = 75°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RQ3E080AJ | Single-channel 30 V, 80 A, 1.8 mΩ; no integrated diode; TO-263 package | Requires external Schottky diode and separate gate drive for second switch; larger footprint | Prefer when higher single-channel current rating is needed and board space allows discrete implementation |
| Vishay SiZF300DT | Dual N-channel 30 V, 30 A/30 A, 3.2 mΩ/3.2 mΩ; no integrated diode; PowerPAIR 3.3×3.3 package | Matched channels only; lacks SBD; lower avalanche energy (25 mJ typical) | Select when symmetrical current handling is required and freewheeling path is managed externally or via controller-based synchronous rectification |
Compared with RJK03P9DPA-WS#J5A, RQ3E080AJ offers higher current capacity but adds component count and layout complexity, while SiZF300DT provides tighter channel matching at the expense of integrated diode functionality and ruggedness - making RJK03P9DPA-WS#J5A optimal for compact, high-reliability synchronous buck designs where SBD integration and asymmetric current allocation deliver measurable system-level efficiency and BOM reduction.
Availability
RJK03P9DPA-WS#J5A is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drivers, server VRM phase blocks, and DC/DC buck converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for RJK03P9DPA-WS#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK03P9DPA-WS#J5A belongs to Renesas' Power MOSFET family designed specifically for high-efficiency, high-density power conversion in automotive and industrial applications where integrated functionality, thermal performance, and reliability under transient stress are critical.
FAQ
What is the gate threshold voltage range for RJK03P9DPA-WS#J5A?
The gate-to-source cutoff voltage (VGS(off)) for both MOS1 and MOS2 in RJK03P9DPA-WS#J5A is specified from 1.2 V to 2.5 V at VDS = 10 V and ID = 1 mA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic-level drivers while maintaining noise immunity against spurious gate excitation in noisy automotive environments.
Does RJK03P9DPA-WS#J5A support 4.5 V gate drive for both channels?
Yes, RJK03P9DPA-WS#J5A is fully characterized for 4.5 V gate drive: MOS1 RDS(on) is 10.9 mΩ max and MOS2 RDS(on) is 2.7 mΩ max at ID = 10 A and 25 A respectively. This confirms robust enhancement-mode operation without requiring gate voltage boosting in standard microcontroller-driven applications.
How is the Schottky barrier diode connected in RJK03P9DPA-WS#J5A?
In RJK03P9DPA-WS#J5A, the integrated Schottky barrier diode is connected between the source and drain of MOS2 - its anode is tied to MOS2's source (pins 5–7, 9), and its cathode is tied to MOS2's drain (pins 2–4, 9). This configuration enables natural freewheeling current path during low-side switch off-time in buck and half-bridge topologies.
What is the maximum allowable case temperature for continuous operation of RJK03P9DPA-WS#J5A?
RJK03P9DPA-WS#J5A supports continuous operation up to Tc = 100°C for MOS2 (35 W Pch) and Tc = 75°C for MOS1 (15 W Pch), based on derating curves in the datasheet. At Tc = 100°C, MOS2's RDS(on) increases to ~3.0 mΩ, and MOS1's rises to ~9.5 mΩ - both remain within functional specification limits.
Can RJK03P9DPA-WS#J5A be used in avalanche mode, and what are the rated limits?
Yes, RJK03P9DPA-WS#J5A is rated for single-pulse avalanche operation: MOS1 withstands 12 A avalanche current and 14.4 mJ energy, MOS2 handles 22 A and 48 mJ, both tested at Tch = 25°C with Rg ≥ 50 Ω. These values validate suitability for inductive load switching in automotive and industrial motor control where unclamped inductive kick is present.
RJK03P9DPA-WS#J5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK03P9DPA-WS#J5A FAQ
1.How can I place an order for RJK03P9DPA-WS#J5A through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK03P9DPA-WS#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK03P9DPA-WS#J5A reliable?
The price and inventory of RJK03P9DPA-WS#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK03P9DPA-WS#J5A is usually 5 days.
3.What payment methods are accepted for RJK03P9DPA-WS#J5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK03P9DPA-WS#J5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK03P9DPA-WS#J5A?
RJK03P9DPA-WS#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK03P9DPA-WS#J5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK03P9DPA-WS#J5A?
For technical support, including RJK03P9DPA-WS#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK03P9DPA-WS#J5A requirements.
6.How does Aetrix verify that RJK03P9DPA-WS#J5A is sourced from the original manufacturer or authorized distributors?
All RJK03P9DPA-WS#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK03P9DPA-WS#J5A meets industry standards.
7.What is the process for return or replacement of RJK03P9DPA-WS#J5A?
All RJK03P9DPA-WS#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK03P9DPA-WS#J5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK03P9DPA-WS#J5A part is unused and in its original packaging.
Return procedure for RJK03P9DPA-WS#J5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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