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Renesas RJK0603DPN-A0#T2
- Part No.:
- RJK0603DPN-A0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
RJK0603DPN-A0#T2.pdf
- Description:
- MOSFET N-CH 60V 80A TO220ABA
- Quantity:
- Payment:
- Shipping:
Inventory:9,878
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Product details
Overview
RJK0603DPN-A0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive half-bridges, and industrial power supplies. It delivers 60 V VDSS, 80 A continuous drain current at Tc = 25°C, and a low RDS(on) of 4.1 mΩ (typ.) at VGS = 10 V in a TO-220ABA package.
For engineers reviewing the RJK0603DPN-A0#T2 datasheet, RJK0603DPN-A0#T2 pinout, RJK0603DPN-A0#T2 application, or RJK0603DPN-A0#T2 equivalent, key selection criteria include avalanche energy rating (120 mJ), gate charge (57 nC), thermal impedance (1.0 °C/W), and body-diode reverse recovery time (50 ns) in high-frequency hard-switching topologies.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in synchronous rectification and PWM-controlled power stages. Its 4.1 mΩ RDS(on) enables efficient operation at 40–80 A load currents while maintaining <1.5 V body-diode forward voltage under 80 A forward conduction.
The device supports gate drive with standard 10 V logic-level signals and features tightly controlled VGS(off) (2.0–4.0 V), enabling reliable turn-off even with moderate gate noise. Its 57 nC total gate charge and 20 nC Qgs/10 nC Qgd ratio support clean voltage-controlled switching with minimal Miller-induced shoot-through risk in bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage in off-state; suitable for 48 V bus systems with margin. |
| RDS(on) (VGS = 10 V) | 4.1 mΩ (typ.) - Enables ≤3.3 W conduction loss at 80 A, reducing heatsink requirements. |
| ID (continuous) | 80 A at Tc = 25°C - Supports high-power output stages without parallel devices. |
| EAS | 120 mJ - Withstands single-pulse inductive energy up to 100 µH × (40 A)²/2 without failure. |
| Qg | 57 nC - Determines gate driver power demand; compatible with common 1–2 A peak drivers. |
| tr/tf | 12 ns / 13 ns - Enables >1 MHz switching in resonant or ZVS designs with low EMI. |
| θch-c | 1.0 °C/W - Allows direct mounting to heatsink; 125 W dissipation yields ≤125°C channel rise above case. |
Pinout & Package
Package: TO-220ABA (RENESAS code PRSS0004A-A), JEDEC TO-220AB compliant, with isolated drain tab for direct heatsink mounting and 2.1 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V for full enhancement; ±20 V absolute max rating. |
| 2 & 4 (D) | Drain | Main high-side current path; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground. |
| 3 (S) | Source | Power return node; defines reference for gate drive; carries full load current and body-diode reverse recovery charge. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 10 V drive | 4.1 mΩ typ. - Reduces I²R losses in high-current SMPS primary switches and motor phase legs. |
| Fast switching with low Qgd/Qg ratio | 10 nC / 57 nC - Minimizes Miller plateau duration, improving dV/dt immunity and reducing cross-conduction risk. |
| Robust avalanche capability | 120 mJ EAS at Tch = 25°C - Supports unclamped inductive switching in relay drivers and solenoid controls without external snubbers. |
| Optimized body diode | 50 ns trr, 0.85 V VDF - Enables efficient synchronous rectification and reduces reverse recovery loss in LLC converters. |
| Thermal performance | 1.0 °C/W θch-c - Enables compact thermal design with standard TO-220 heatsinks for 100+ W applications. |
Applications
| DC-DC Converter Primary Switch | Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 48 V input buck or full-bridge DC-DC converter delivering 100–200 W to server VRMs or telecom power modules. IC Role / Device Role / Timing Role: Main high-side switching element handling 80 A pulsed drain current with 30 ns turn-on delay and 12 ns rise time. Use Value: 4.1 mΩ RDS(on) limits conduction loss to <3.3 W at full load, enabling >95% efficiency at 500 kHz switching. | Use Scenario: 24–48 V brushed DC or BLDC motor controller driving industrial actuators or HVAC blowers. IC Role / Device Role / Timing Role: Upper-leg N-channel switch in half-bridge topology, commutated at ≤20 kHz with body-diode freewheeling. Use Value: 50 ns body-diode trr and 0.85 V VDF reduce switching loss and heat generation during PWM dead-time conduction. |
| Industrial Power Supply Output Stage | Solenoid/Relay Driver |
Use Scenario: 60 V-rated industrial AC/DC power supply output rectifier or OR-ing FET in redundant 48 V distribution. IC Role / Device Role / Timing Role: Synchronous rectifier or hot-swap MOSFET controlling power delivery to downstream loads. Use Value: 120 mJ avalanche energy rating allows safe clamping of inductive kickback from transformer leakage or cable inductance. | Use Scenario: High-current solenoid or relay coil driver in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via intrinsic avalanche capability. Use Value: Rated 40 A IAP and 120 mJ EAS eliminate need for external flyback diodes in 80 A peak coil drive circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH80N60L2 | 600 V VDSS, 80 A, 18 mΩ - Higher voltage rating but 4.4× higher RDS(on). | Designed for 400 V+ PFC stages; unsuitable for low-voltage, high-current efficiency-critical use. | Select only if system requires >100 V blocking; otherwise RJK0603DPN-A0#T2 offers superior conduction efficiency at 60 V. |
| STP80NF55-08 | 55 V VDSS, 80 A, 7.5 mΩ - Lower voltage rating and 83% higher on-resistance than RJK0603DPN-A0#T2. | Targeted at 24–48 V automotive and industrial loads; marginal margin at 60 V bus transients. | Acceptable for 48 V nominal systems with strict transient control; RJK0603DPN-A0#T2 preferred for 60 V-rated designs requiring lowest loss. |
Compared with IXTH80N60L2 and STP80NF55-08, RJK0603DPN-A0#T2 provides the lowest RDS(on) (4.1 mΩ) at 60 V, enabling highest efficiency in 48–60 V high-current power conversion where thermal headroom and conduction loss dominate design constraints.
Availability
RJK0603DPN-A0#T2 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and 48 V power distribution systems requiring stable component supply and long-term manufacturability.
Supply support for RJK0603DPN-A0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK series targets high-efficiency power conversion with trench-MOSFET technology optimized for low RDS(on), fast switching, and rugged avalanche performance in demanding industrial applications.
FAQ
What is the maximum continuous drain current rating for RJK0603DPN-A0#T2?
The RJK0603DPN-A0#T2 is rated for 80 A continuous drain current at case temperature Tc = 25°C. Derating applies above this temperature per the power vs. temperature derating curve on page 3 of the datasheet; at Tc = 100°C, the usable ID drops to approximately 45 A. This rating assumes proper heatsinking with θch-c = 1.0 °C/W and no additional ambient thermal constraints. The RJK0603DPN-A0#T2 must not exceed its 125 W channel dissipation limit under any operating condition.
Does RJK0603DPN-A0#T2 support 5 V gate drive?
No, RJK0603DPN-A0#T2 is not specified for full enhancement at 5 V gate drive. Its gate threshold voltage VGS(off) ranges from 2.0 V to 4.0 V, and RDS(on) is characterized at VGS = 10 V (4.1 mΩ typ.). At VGS = 5 V, RDS(on) increases significantly-typically >15 mΩ-degrading efficiency and thermal performance. The RJK0603DPN-A0#T2 requires a minimum 10 V gate drive for optimal conduction loss and reliable switching in production designs.
What is the avalanche energy rating of RJK0603DPN-A0#T2 and how is it tested?
The RJK0603DPN-A0#T2 has a single-pulse avalanche energy rating EAS of 120 mJ at Tch = 25°C, measured with L = 100 µH, Rg ≥ 50 Ω, and VDD = 20 V under <0.1% duty cycle conditions. This rating reflects the device's ability to absorb inductive energy without failure during unclamped inductive switching events. The RJK0603DPN-A0#T2 is not intended for repetitive avalanche operation; sustained stress beyond datasheet limits may degrade reliability.
Can RJK0603DPN-A0#T2 be used in synchronous rectification applications?
Yes, RJK0603DPN-A0#T2 is suitable for synchronous rectification due to its low 0.85 V typical body-diode forward voltage (VDF) at 80 A and fast 50 ns reverse recovery time (trr). These parameters minimize conduction and switching losses when the body diode conducts during dead time. However, external gate control is required to actively turn on the MOSFET during the rectification phase. The RJK0603DPN-A0#T2's 4.1 mΩ RDS(on) further reduces forward drop compared to Schottky alternatives in 48 V systems.
What is the thermal resistance from channel to case (θch-c) for RJK0603DPN-A0#T2?
The channel-to-case thermal resistance θch-c for RJK0603DPN-A0#T2 is specified as a designed target maximum of 1.0 °C/W under Renesas' measurement conditions-not a tested value. This figure assumes ideal mounting: flat, clean, thermally conductive interface between the isolated drain tab and heatsink, with uniform pressure and appropriate thermal compound. Real-world θch-c will be higher if mounting is suboptimal. The RJK0603DPN-A0#T2's thermal performance directly impacts its usable power dissipation in applications like motor drives and DC-DC converters.
RJK0603DPN-A0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.2mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4150 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220ABA
RJK0603DPN-A0#T2 FAQ
1.How can I place an order for RJK0603DPN-A0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0603DPN-A0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0603DPN-A0#T2 reliable?
The price and inventory of RJK0603DPN-A0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0603DPN-A0#T2 is usually 5 days.
3.What payment methods are accepted for RJK0603DPN-A0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0603DPN-A0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0603DPN-A0#T2?
RJK0603DPN-A0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0603DPN-A0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0603DPN-A0#T2?
For technical support, including RJK0603DPN-A0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0603DPN-A0#T2 requirements.
6.How does Aetrix verify that RJK0603DPN-A0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK0603DPN-A0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0603DPN-A0#T2 meets industry standards.
7.What is the process for return or replacement of RJK0603DPN-A0#T2?
All RJK0603DPN-A0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0603DPN-A0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0603DPN-A0#T2 part is unused and in its original packaging.
Return procedure for RJK0603DPN-A0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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