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Renesas RJK0658DPA-00#J5A

Part No.:
RJK0658DPA-00#J5A
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
8-WFDFN Exposed Pad
Datasheet:
AetrixRJK0658DPA-00#J5A.pdf
Description:
MOSFET N-CH 60V 25A 8WPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

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Product details

Overview

RJK0658DPA-00#J5A from Renesas Electronics is a 60V, 25A N-channel power MOSFET in WPAK(3F) package with 11.1 mΩ max RDS(on) at VGS = 10 V, optimized for high-speed switching in DC-DC converters and motor drive half-bridges. It features low gate charge (19.4 nC), fast switching (td(off) = 36 ns), and integrated body diode with trr = 35 ns.

For engineers reviewing the RJK0658DPA-00#J5A datasheet, RJK0658DPA-00#J5A pinout, RJK0658DPA-00#J5A application, or RJK0658DPA-00#J5A equivalent, key selection criteria include its 60 V VDSS, 25 A continuous drain current, 11.1 mΩ on-resistance, thermal resistance of 2.5 °C/W, and WPAK(3F) surface-mount footprint for high-density power stages.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low RDS(on) and high switching speed while maintaining avalanche ruggedness (EAS = 11.7 mJ). Its gate threshold voltage range (2.0–4.0 V) ensures compatibility with standard 5 V and 10 V logic-level drivers.

The device integrates a body diode rated for 25 A reverse recovery current with 35 ns trr and 1.1 V forward voltage at 25 A, enabling synchronous rectification and freewheeling operation without external diodes in many topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - supports 48 V bus systems with margin against transients
ID (continuous)25 A - delivers full-rated current at Tc = 25 °C with heatsinking
RDS(on) max11.1 mΩ - limits conduction loss to ≤7 W at 25 A (I²R)
Qg19.4 nC - enables efficient 500 kHz+ switching with moderate gate driver strength
td(off)36 ns - reduces dead-time requirements in bridge configurations
EAS11.7 mJ - withstands single-pulse inductive energy without failure
θch-c2.5 °C/W - requires minimal thermal interface for 50 W dissipation at ΔT = 125 °C

Pinout & Package

Package: WPAK(3F), 8-pin surface-mount (RENESAS code PWSN0008DE-A), thermally enhanced with exposed drain pad. Dimensions: 5.9 mm × 4.23 mm × 0.85 mm max, mass 0.075 g.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3SourceCommon source connection for internal parallel FET cells; tied to PCB ground plane for low-inductance return path
4GateControl input requiring ≤0.1 μA leakage; driven by 10 V logic for full enhancement
5, 6, 7, 8DrainHigh-current output node connected to exposed copper pad; carries full load current and heat to PCB

Key Features

FeatureDesign Value
Low RDS(on) with high current rating11.1 mΩ @ 25 A enables <7 W conduction loss in 48 V/25 A power stages
Fast switching with low Qg19.4 nC total gate charge allows clean 30–500 kHz PWM control using 1–2 A gate drivers
Avalanche-rated structure12.5 A IAP and 11.7 mJ EAS support reliable operation under inductive turn-off stress
Optimized body diode35 ns trr and 1.1 V VDF reduce switching loss and voltage spikes in freewheeling paths
Pb-free and halogen-freeComplies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile

Applications

DC-DC Buck ConverterBrushless DC Motor Driver

Use Scenario: 48 V input to 12 V/20 A output in telecom power supply.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 10 V gate drive.

Use Value: 11.1 mΩ RDS(on) limits conduction loss to 4.4 W, while 36 ns td(off) minimizes shoot-through risk during phase transitions.

Use Scenario: Half-bridge leg in 24 V BLDC controller for HVAC fan module.

IC Role / Device Role / Timing Role: Low-side switching element commutating 15 A peak motor current with PWM frequency up to 20 kHz.

Use Value: Integrated body diode with 35 ns trr suppresses voltage overshoot during freewheeling, eliminating need for external Schottky diode.

Industrial LED DriverServer VRM High-Side Switch

Use Scenario: Constant-current dimming stage driving 36 V, 10 A LED string.

IC Role / Device Role / Timing Role: PWM-controlled current regulator switch modulating at 1–5 kHz.

Use Value: 2.5 °C/W θch-c enables stable 10 A operation on 2-layer PCB without heatsink, reducing BOM cost.

Use Scenario: High-side FET in 12 V → 1.2 V, 120 A multiphase VRM for AI accelerator card.

IC Role / Device Role / Timing Role: Fast-switching power stage synchronized to 1 MHz controller with precise dead-time control.

Use Value: 19.4 nC Qg and 12 ns td(on) allow tight timing alignment across phases, improving current sharing accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXTP26N60P600 V VDSS, 26 A ID, 180 mΩ RDS(on), TO-220 packageHigher voltage rating but 16× higher on-resistance; unsuitable for 48 V high-efficiency designsSelect only if >400 V blocking capability required and thermal constraints permit larger package
IRF3205PBF55 V VDSS, 110 A ID, 8.0 mΩ RDS(on), TO-220AB packageLower voltage rating (55 V), higher current, larger footprint, no avalanche rating specifiedUse where 55 V max bus voltage is acceptable and board space allows through-hole mounting

Compared with IXTP26N60P and IRF3205PBF, the RJK0658DPA-00#J5A uniquely balances 60 V rating, 11.1 mΩ on-resistance, WPAK(3F) compactness, and guaranteed avalanche energy-making it optimal for space-constrained 48 V industrial power stages requiring reliability and efficiency.

Availability

RJK0658DPA-00#J5A is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, LED drivers, and server VRMs requiring stable component supply, consistent parametric performance, and RoHS-compliant sourcing.

Supply support for RJK0658DPA-00#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The RJK0658DPA-00#J5A belongs to Renesas' WPAK-series power MOSFET product line, engineered for high-current, high-frequency switching in compact surface-mount power supplies and motor controllers.

FAQ

What is the maximum continuous drain current rating for RJK0658DPA-00#J5A?

The RJK0658DPA-00#J5A has a maximum continuous drain current (ID) of 25 A at case temperature Tc = 25 °C. This rating assumes proper PCB copper area for thermal conduction; derating applies above 25 °C per the power vs. temperature curve on page 3 of the datasheet. At Tc = 100 °C, usable current drops to approximately 14 A.

Does RJK0658DPA-00#J5A support logic-level gate drive?

Yes, the RJK0658DPA-00#J5A is fully enhanced at VGS = 10 V and has a gate threshold voltage (VGS(off)) range of 2.0–4.0 V, making it compatible with standard 5 V and 10 V logic-level drivers. It is not a true 3.3 V logic-level MOSFET-operation below 4.5 V VGS yields significantly higher RDS(on) and should be verified per application conditions.

What is the avalanche energy rating of RJK0658DPA-00#J5A and how is it tested?

The RJK0658DPA-00#J5A is rated for 11.7 mJ single-pulse avalanche energy (EAS) at Tch = 25 °C with Rg ≥ 50 Ω. This value is measured using the standardized avalanche test circuit shown on page 5 of the datasheet, where inductive energy L·IAP²/2 is dissipated in the MOSFET channel during unclamped inductive switching.

Can RJK0658DPA-00#J5A be used in parallel configurations?

Yes, the RJK0658DPA-00#J5A supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling. The datasheet's RDS(on) vs. temperature plot (page 4) confirms monotonic increase from –25 °C to 150 °C, validating inherent current-sharing stability.

What is the thermal resistance from channel to case (θch-c) for RJK0658DPA-00#J5A?

The RJK0658DPA-00#J5A has a channel-to-case thermal resistance (θch-c) of 2.5 °C/W, measured under Tc = 25 °C conditions. This value reflects conduction through the exposed drain pad into the PCB copper; actual system θJA depends on board stack-up, copper area, and airflow, and must be validated via thermal simulation or measurement.

RJK0658DPA-00#J5A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-WFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
11.1mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
19.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1580 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-WPAK

RJK0658DPA-00#J5A FAQ

1.How can I place an order for RJK0658DPA-00#J5A through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0658DPA-00#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0658DPA-00#J5A reliable?

The price and inventory of RJK0658DPA-00#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0658DPA-00#J5A is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0658DPA-00#J5A transactions.

Note: Certain payment methods may incur a processing fee.

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RJK0658DPA-00#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0658DPA-00#J5A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0658DPA-00#J5A?

For technical support, including RJK0658DPA-00#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0658DPA-00#J5A requirements.

6.How does Aetrix verify that RJK0658DPA-00#J5A is sourced from the original manufacturer or authorized distributors?

All RJK0658DPA-00#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0658DPA-00#J5A meets industry standards.

7.What is the process for return or replacement of RJK0658DPA-00#J5A?

All RJK0658DPA-00#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK0658DPA-00#J5A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0658DPA-00#J5A part is unused and in its original packaging.

Return procedure for RJK0658DPA-00#J5A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK0658DPA-00#J5A Tags

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