Renesas RJK0660DPA-00#J5A
- Part No.:
- RJK0660DPA-00#J5A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-WFDFN Exposed Pad
- Datasheet:
-
RJK0660DPA-00#J5A.pdf
- Description:
- MOSFET N-CH 60V 40A 8WPAK
- Quantity:
- Payment:

- Shipping:

Inventory:6,000
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Product details
Overview
RJK0660DPA-00#J5A from Renesas Electronics is a 60V, 40A N-channel power MOSFET in WPAK(3F) package with 5.1 mΩ max RDS(on) at VGS = 10 V, optimized for high-speed switching in DC-DC converters and motor drivers.
For engineers reviewing the RJK0660DPA-00#J5A datasheet, RJK0660DPA-00#J5A pinout, RJK0660DPA-00#J5A application, or RJK0660DPA-00#J5A equivalent, key selection criteria include its low gate charge (45 nC), fast switching times (td(on) = 18 ns, tf = 11 ns), and thermal resistance (θch-c = 1.93 °C/W).
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low on-resistance and high current density in a surface-mount WPAK(3F) package. Its gate threshold voltage (VGS(off) = 2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drive.
The device integrates a robust body diode with reverse recovery time (trr = 47 ns) and forward voltage (VDF = 0.8–1.1 V at 40 A), supporting synchronous rectification and freewheeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports 48 V bus systems with 20 % margin against transients |
| RDS(on) max | 5.1 mΩ at VGS = 10 V, ID = 20 A - enables <1.0 W conduction loss at 20 A |
| Qg | 45 nC - reduces gate driver power requirement and switching loss in high-frequency operation |
| td(on)/tf | 18 ns / 11 ns - allows >1 MHz switching in buck converters without excessive overlap loss |
| θch-c | 1.93 °C/W - delivers 65 W channel dissipation at Tc = 25 °C, enabling compact heatsink design |
| ID | 40 A continuous - rated for sustained load current in industrial motor control H-bridges |
| EAS | 30 mJ - withstands single-pulse inductive energy in unclamped inductive switching (UIS) events |
Pinout & Package
Package: WPAK(3F), also designated PWSN0008DE-A - thermally enhanced 8-pin surface-mount package with exposed drain pad for low thermal resistance and high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection; electrically tied to internal MOSFET source terminals and thermal pad ground plane |
| 4 | Gate | Control input; requires ≤±20 V gate-source voltage; low 1.1 Ω gate resistance minimizes ringing |
| 5, 6, 7, 8 | Drain | High-current drain node; pins 5–8 and exposed pad form parallel low-inductance path for 40 A conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with high current rating | 5.1 mΩ @ 40 A enables <0.8 W conduction loss at full load in 12 V/40 A power stages |
| Fast switching with low Qg | 45 nC total gate charge supports efficient 500 kHz–1 MHz operation with minimal driver stress |
| Optimized body diode | 47 ns trr and 1.1 V VDF reduce reverse recovery loss in synchronous rectifier and half-bridge configurations |
| Thermally robust construction | 1.93 °C/W channel-to-case impedance allows 65 W dissipation with modest PCB copper area |
| Pb-free and halogen-free | Complies with JEDEC J-STD-020 moisture sensitivity level 3 and RoHS Directive 2011/65/EU |
Applications
| Industrial Motor Drive | Server VRM |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 30–40 A peak phase current with 10–50 kHz PWM. Use Value: Low RDS(on) and fast tf minimize conduction + switching losses, improving efficiency by ≥1.2 % over legacy 8 mΩ MOSFETs at 30 A. | Use Scenario: Synchronous buck power stage in 12 V input, 0.8–3.3 V output CPU/GPU VRMs. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 300–600 kHz with tight duty-cycle control. Use Value: 45 nC Qg and 11 ns fall time enable stable high-frequency operation while maintaining <0.5 % duty-cycle resolution. |
| Telecom PSU | EV Onboard Charger |
Use Scenario: Primary-side switch in isolated LLC resonant converters for 48 V telecom rectifiers. IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable 60 V primary FET delivering up to 1.5 kW output. Use Value: 30 mJ EAS rating ensures reliability during transient overloads and startup surges without snubber redesign. | Use Scenario: DC-DC isolation stage in 400 V–800 V bidirectional onboard chargers for EVs. IC Role / Device Role / Timing Role: 60 V-rated secondary-side synchronous rectifier in dual-active-bridge topology. Use Value: Optimized body diode trr and low VDF reduce reverse recovery loss by 35 % compared to standard Si MOSFETs in 100–200 kHz operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP40N065T | 65 V VDSS, 40 A, 6.5 mΩ RDS(on), TO-220 package | Higher RDS(on) and through-hole mounting limit high-frequency, high-density designs | Preferred where board space permits and thermal mass favors leaded packages |
| STL220N6F7 | 60 V VDSS, 220 A, 1.6 mΩ RDS(on), PowerFLAT 5x6 | Lower RDS(on) but higher Qg (120 nC); not rated for same UIS energy (EAS = 15 mJ) | Better for ultra-low-loss 10–30 A applications; unsuitable for repetitive avalanche stress |
Compared with IXTP40N065T and STL220N6F7, the RJK0660DPA-00#J5A uniquely balances low RDS(on), moderate Qg, and high EAS in a compact surface-mount package-making it optimal for space-constrained 40 A industrial and telecom power stages requiring ruggedness and efficiency.
Availability
RJK0660DPA-00#J5A is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for RJK0660DPA-00#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK0660DPA-00#J5A belongs to Renesas' WPAK-series power MOSFET product line, engineered for high-current, high-efficiency switching in space-constrained industrial and communications power systems.
FAQ
What is the maximum continuous drain current rating for RJK0660DPA-00#J5A?
The RJK0660DPA-00#J5A is rated for 40 A continuous drain current (ID) at Tc = 25 °C. Derating applies above this case temperature per the power vs. temperature curve on page 3 of the datasheet; at Tc = 100 °C, usable ID drops to approximately 22 A due to thermal limits.
Does RJK0660DPA-00#J5A support logic-level gate drive?
The RJK0660DPA-00#J5A has a gate threshold voltage (VGS(off)) of 2.0–4.0 V, making it compatible with 5 V logic-level gate drivers. However, its RDS(on) is specified at VGS = 10 V; for minimum on-resistance, a 10 V gate drive is recommended.
What is the avalanche energy rating of RJK0660DPA-00#J5A?
The RJK0660DPA-00#J5A is rated for 30 mJ single-pulse avalanche energy (EAS) at Tch = 25 °C with Rg ≥ 50 Ω. This rating supports robustness in unclamped inductive switching events common in motor drive and relay driving applications.
Is RJK0660DPA-00#J5A suitable for synchronous rectification?
Yes, the RJK0660DPA-00#J5A is suitable for synchronous rectification due to its low RDS(on) (5.1 mΩ), fast body diode (trr = 47 ns), and low forward voltage (VDF = 0.8–1.1 V). Its integrated diode performance enables high-efficiency replacement of Schottky diodes in 48 V output DC-DC converters.
What package type does RJK0660DPA-00#J5A use and what are its thermal characteristics?
RJK0660DPA-00#J5A uses the WPAK(3F) package (RENESAS code PWSN0008DE-A), featuring an exposed drain pad for low thermal resistance. Its channel-to-case thermal impedance is 1.93 °C/W, enabling 65 W channel dissipation at Tc = 25 °C when mounted on ≥10 cm² 2-oz copper with thermal vias.
RJK0660DPA-00#J5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-WFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3600 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WPAK
RJK0660DPA-00#J5A FAQ
1.How can I place an order for RJK0660DPA-00#J5A through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0660DPA-00#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0660DPA-00#J5A reliable?
The price and inventory of RJK0660DPA-00#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0660DPA-00#J5A is usually 5 days.
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Once your RJK0660DPA-00#J5A order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for RJK0660DPA-00#J5A?
For technical support, including RJK0660DPA-00#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0660DPA-00#J5A requirements.
6.How does Aetrix verify that RJK0660DPA-00#J5A is sourced from the original manufacturer or authorized distributors?
All RJK0660DPA-00#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0660DPA-00#J5A meets industry standards.
7.What is the process for return or replacement of RJK0660DPA-00#J5A?
All RJK0660DPA-00#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK0660DPA-00#J5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0660DPA-00#J5A part is unused and in its original packaging.
Return procedure for RJK0660DPA-00#J5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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