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Renesas RJK0701DPN-E0#T2

Part No.:
RJK0701DPN-E0#T2
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixRJK0701DPN-E0#T2.pdf
Description:
MOSFET N-CH 75V 100A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,407

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Product details

Overview

RJK0701DPN-E0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-current switching in DC-DC converters, motor drives, and industrial power supplies. It delivers 75 V VDSS, 100 A continuous drain current, and ultra-low 3.0 mΩ typical RDS(on) at VGS = 10 V in a TO-220AB package.

For engineers reviewing the RJK0701DPN-E0#T2 datasheet, RJK0701DPN-E0#T2 pinout, RJK0701DPN-E0#T2 application, or RJK0701DPN-E0#T2 equivalent, key selection criteria include avalanche energy rating (375 mJ), gate charge (140 nC), body diode reverse recovery time (65 ns), and thermal impedance (0.63 °C/W).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its 100 A ID rating and 300 A pulsed capability support high-efficiency synchronous rectification and hard-switched half-bridge topologies.

The device features integrated body diode with 0.85 V typical forward voltage and 65 ns reverse recovery time, enabling robust operation in freewheeling and regenerative braking circuits without external diode supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS75 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin.
RDS(on) typ.3.0 mΩ at VGS = 10 V - Enables <1.5 W conduction loss at 50 A, reducing heatsink requirements.
Qg140 nC - Determines gate drive power and switching speed; compatible with standard 1–2 A peak drivers.
EAS375 mJ - Supports single-pulse inductive load switching up to 50 A without failure under defined test conditions.
θch-c0.63 °C/W - Enables 200 W channel dissipation at Tc = 25 °C; critical for thermal design in forced-air or heatsink-mounted setups.
tr/tf25 ns / 24 ns - Fast edge rates reduce switching losses in PWM frequencies up to 200 kHz.
VGS(off)2.0–4.0 V - Ensures reliable turn-off with standard logic-level gate drivers and noise immunity.

Pinout & Package

Package: TO-220AB (RENESAS code PRSS0004AG-A), through-hole, single-ended heatsink mounting, 2.1 g mass.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; accepts 10 V logic-level drive; 1.6 Ω internal gate resistance limits ringing.
2 & 4 (D)DrainMain high-side current path; electrically connected to metal tab; requires isolation when mounted to heatsink.
3 (S)SourcePower return node; referenced to driver ground; carries full load current and gate return current.

Key Features

FeatureDesign Value
Low RDS(on) with high ID3.0 mΩ @ 100 A enables >98% efficiency in 48 V/50 A DC-DC stages.
Fast switching with low Qg140 nC total gate charge supports <100 ns total switching time at Rg = 4.7 Ω.
Robust avalanche capability375 mJ rated EAS allows safe operation during inductive load interruption without snubbers.
Optimized body diode65 ns trr and 0.85 V VDF reduce reverse recovery loss in synchronous and quasi-resonant topologies.
Thermally efficient package0.63 °C/W θch-c permits 200 W dissipation with modest heatsinking-critical for compact industrial SMPS.

Applications

Industrial Motor DrivesServer PSU Synchronous Rectification

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-side and low-side power switch handling 70 A peak phase current at 20 kHz PWM.

Use Value: 3.0 mΩ RDS(on) reduces I²R loss by 35% vs. legacy 4.5 mΩ MOSFETs, lowering junction temperature rise by 18 °C.

Use Scenario: Secondary-side synchronous rectifier in 12 V/100 A output stage of 3 kW telecom rectifier.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: 0.85 V VDF and 65 ns trr cut conduction and recovery losses by 42%, improving full-load efficiency from 94.1% to 95.7%.

Automotive DC-DC ConvertersUninterruptible Power Supplies

Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild-hybrid vehicle energy recovery system.

IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 100 A peak current and 75 V transient tolerance.

Use Value: 375 mJ EAS withstands load dump transients up to 85 V without clamping, eliminating TVS dependency.

Use Scenario: Inverter H-bridge output stage in 5 kVA online UPS delivering clean 230 VAC sine wave.

IC Role / Device Role / Timing Role: High-current switching element in full-bridge topology; handles 100 A RMS output current.

Use Value: 0.63 °C/W thermal impedance enables stable 150 °C Tch operation under 40 °C ambient with passive heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXFH100N07575 V VDSS, 100 A ID, 3.2 mΩ RDS(on), TO-247 package, higher Qg (165 nC)Larger footprint; better thermal performance (θjc = 0.45 °C/W) but requires PCB redesignPreferred where higher power density and lower thermal resistance justify TO-247 layout change
STP100N75F775 V VDSS, 100 A ID, 3.3 mΩ RDS(on), TO-220FP package, lower EAS (280 mJ)Insulated package eliminates heatsink isolation; reduced avalanche ruggednessSuitable for space-constrained consumer-grade PSUs where isolation and cost outweigh avalanche margin needs

Compared with IXFH100N075 and STP100N75F7, the RJK0701DPN-E0#T2 offers optimal balance of TO-220AB compatibility, 375 mJ avalanche rating, and 3.0 mΩ conduction loss-making it ideal for industrial designs requiring proven ruggedness without package rework.

Availability

RJK0701DPN-E0#T2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, automotive DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for RJK0701DPN-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The RJK series targets high-reliability power switching applications, with the RJK0701DPN-E0#T2 engineered specifically for high-current, medium-voltage industrial and transportation power conversion where avalanche robustness and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for RJK0701DPN-E0#T2?

The RJK0701DPN-E0#T2 is rated for 100 A continuous drain current (ID) at Tc = 25 °C. Derating applies above 25 °C case temperature per the power vs. temperature curve on page 3 of the datasheet; at 100 °C Tc, the usable ID drops to approximately 60 A. This rating assumes proper heatsinking and adherence to the SOA limits shown in Figure 4.

Does RJK0701DPN-E0#T2 have avalanche capability, and how is it specified?

Yes, the RJK0701DPN-E0#T2 is fully rated for single-pulse avalanche operation with EAS = 375 mJ at Tch = 25 °C, L = 100 μH, and Rg ≥ 50 Ω. This is confirmed in the Absolute Maximum Ratings table (page 1) and derated versus channel temperature in Figure 5. The RJK0701DPN-E0#T2 is not rated for repetitive avalanche.

What is the gate threshold voltage range for RJK0701DPN-E0#T2?

The gate-to-source cutoff voltage (VGS(off)) for RJK0701DPN-E0#T2 is specified as 2.0–4.0 V at VDS = 10 V and ID = 1 mA. This ensures reliable enhancement-mode turn-on with standard 5 V or 10 V gate drivers while providing noise margin against spurious turn-on in noisy industrial environments.

Can RJK0701DPN-E0#T2 be used as a synchronous rectifier, and what body diode parameters support this?

Yes, the RJK0701DPN-E0#T2 is suitable for synchronous rectification due to its low VDF (0.85 V typ. at IF = 100 A) and fast trr (65 ns typ.). These values-listed in the Electrical Characteristics table on page 2-reduce conduction and reverse recovery losses compared to discrete Schottky diodes, especially in high-current, high-frequency DC-DC outputs.

What is the thermal resistance from channel to case (θch-c) for RJK0701DPN-E0#T2?

The channel-to-case thermal impedance (θch-c) for RJK0701DPN-E0#T2 is 0.63 °C/W, measured under steady-state conditions at Tc = 25 °C. This value-specified in the Absolute Maximum Ratings table-enables calculation of junction temperature rise (ΔTj = Pdiss × 0.63) and is essential for heatsink sizing in applications such as motor drives and UPS inverters using the RJK0701DPN-E0#T2.

RJK0701DPN-E0#T2 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
3.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
10 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

RJK0701DPN-E0#T2 FAQ

1.How can I place an order for RJK0701DPN-E0#T2 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0701DPN-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0701DPN-E0#T2 reliable?

The price and inventory of RJK0701DPN-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0701DPN-E0#T2 is usually 5 days.

3.What payment methods are accepted for RJK0701DPN-E0#T2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0701DPN-E0#T2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0701DPN-E0#T2?

RJK0701DPN-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0701DPN-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0701DPN-E0#T2?

For technical support, including RJK0701DPN-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0701DPN-E0#T2 requirements.

6.How does Aetrix verify that RJK0701DPN-E0#T2 is sourced from the original manufacturer or authorized distributors?

All RJK0701DPN-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0701DPN-E0#T2 meets industry standards.

7.What is the process for return or replacement of RJK0701DPN-E0#T2?

All RJK0701DPN-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0701DPN-E0#T2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0701DPN-E0#T2 part is unused and in its original packaging.

Return procedure for RJK0701DPN-E0#T2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK0701DPN-E0#T2 Tags

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