Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas RJK0701DPP-E0#T2

Part No.:
RJK0701DPP-E0#T2
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixRJK0701DPP-E0#T2.pdf
Description:
MOSFET N-CH 75V 100A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:347

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

RJK0701DPP-E0#T2 from Renesas Electronics is an N-channel MOSFET designed for high-current DC-DC power conversion and motor drive switching. It delivers 75 V VDSS, 100 A continuous drain current, and a low 3.0 mΩ typical RDS(on) at VGS = 10 V in a TO-220FP package-enabling efficient 48 V industrial power supplies and brushed DC motor H-bridge legs.

For engineers reviewing the RJK0701DPP-E0#T2 datasheet, RJK0701DPP-E0#T2 pinout, RJK0701DPP-E0#T2 application, or RJK0701DPP-E0#T2 equivalent, key selection criteria include avalanche energy rating (375 mJ), gate charge (140 nC), body diode reverse recovery time (65 ns), and thermal impedance (4.17 °C/W) for thermally constrained board-level designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in hard-switched topologies. Its 130 S forward transconductance and 10,000 pF input capacitance support robust gate drive with moderate 1.6 Ω intrinsic gate resistance.

The device integrates a co-packaged body diode with 0.85 V typical forward voltage at 100 A and 65 ns reverse recovery time-critical for freewheeling paths in synchronous rectification and half-bridge configurations where diode conduction losses dominate efficiency.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS75 V - supports 48 V nominal bus systems with ≥50% overvoltage margin against transients
RDS(on) typ.3.0 mΩ at VGS = 10 V - enables ≤3 W conduction loss at 100 A, reducing heatsink requirements
ID continuous100 A at Tc = 25°C - suitable for high-power motor drivers without forced air cooling
EAS375 mJ - withstands inductive energy spikes up to 50 A avalanche current in unclamped inductive switching
Qg140 nC - determines gate driver power requirement and switching speed trade-off in PWM circuits
tr/tf25 ns / 24 ns - enables >1 MHz switching in resonant converters with minimal overlap loss
θch-c4.17 °C/W - defines junction-to-case thermal path for direct heatsink mounting in TO-220FP footprint

Pinout & Package

Package: TO-220FP (RENESAS code PRSS0003AG-A), surface-mount compatible with insulated heatsink interface and 1.9 g mass. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control terminalReceives 10 V logic-level gate drive; 1.6 Ω internal gate resistance limits dV/dt-induced ringing
2 (Drain)High-side power nodeInternally bonded to metal tab-must be electrically isolated from heatsink unless referenced to system ground
3 (Source)Reference nodeServes as return path for 100 A load current; connects directly to PCB ground plane or low-inductance source trace

Key Features

FeatureDesign Value
Low RDS(on) with high current rating3.0 mΩ @ 100 A enables <3 W conduction loss in 48 V/1 kW power stages
Fast switching with controlled gate charge140 nC Qg and 25 ns rise time allow efficient operation above 500 kHz in SMPS
Robust avalanche capability375 mJ EAS permits reliable unclamped inductive switching in motor phase-legs without external snubbers
Optimized body diode performance65 ns trr and 0.85 V VDF reduce freewheeling losses in half-bridge and synchronous buck topologies

Applications

Industrial Motor Drives48 V DC-DC Converters

Use Scenario: Brushed DC motor H-bridge with 100 A peak phase current in automated material handling equipment.

IC Role / Device Role / Timing Role: High-side and low-side switching element controlling bidirectional torque and braking via PWM.

Use Value: Low 3.0 mΩ RDS(on) minimizes I²R heating during stall conditions; 375 mJ avalanche rating absorbs back-EMF spikes during rapid deceleration.

Use Scenario: Primary-side switch in isolated 48 V–12 V 1.5 kW LLC resonant converter for telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with zero-voltage switching transitions.

Use Value: 25 ns rise time and 140 nC Qg enable precise timing control of ZVS boundaries; 75 V rating accommodates reflected transients.

Uninterruptible Power SuppliesElectric Vehicle Onboard Chargers

Use Scenario: Bidirectional DC link switch in 3 kW UPS inverter stage interfacing battery and AC grid.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch managing regenerative energy flow.

Use Value: Co-packaged body diode with 65 ns trr reduces reverse recovery loss during commutation; 100 A rating handles surge currents during grid fault recovery.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC PFC + LLC stage converting AC to 400 V DC.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification circuit replacing Schottky diodes.

Use Value: 0.85 V VDF and 3.0 mΩ RDS(on) cut conduction losses by >40% vs. 100 A discrete Schottky, improving full-load efficiency to >96%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXTH100N075L2Higher RDS(on) (4.2 mΩ), higher Qg (220 nC), TO-247 packageRequires larger heatsink due to higher conduction loss; slower switching limits frequency to ≤300 kHzSelect when higher avalanche ruggedness (600 mJ) is prioritized over switching speed and board space
STP100NF75Same VDSS (75 V), higher RDS(on) (4.5 mΩ), TO-220 package without FP insulationNon-isolated tab demands insulating washer; higher on-resistance increases thermal stress at 100 AChoose only if cost sensitivity outweighs thermal performance and isolation requirements

Compared with IXTH100N075L2 and STP100NF75, the RJK0701DPP-E0#T2 offers superior combination of low RDS(on), fast switching, and insulated TO-220FP packaging-making it optimal for compact, high-efficiency 48–75 V power stages where thermal management and layout simplicity are critical.

Availability

RJK0701DPP-E0#T2 is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for RJK0701DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The RJK0701DPP-E0#T2 belongs to Renesas' high-current trench-MOSFET product line, engineered for high-efficiency, high-reliability power conversion in demanding industrial environments.

FAQ

What is the maximum continuous drain current rating for RJK0701DPP-E0#T2?

The RJK0701DPP-E0#T2 is rated for 100 A continuous drain current at case temperature Tc = 25°C. Derating applies above this temperature per the power vs. temperature curve on page 3 of the datasheet, with 30 W channel dissipation limit and 4.17 °C/W thermal impedance defining the safe operating area under real-world heatsinking conditions.

Does RJK0701DPP-E0#T2 have avalanche capability, and what is its rated energy?

Yes, the RJK0701DPP-E0#T2 is fully rated for repetitive avalanche operation with EAS = 375 mJ at Tch = 25°C, L = 100 μH, and Rg ≥ 50 Ω. This specification is confirmed in the Absolute Maximum Ratings table and validated in the avalanche energy vs. channel temperature graph on page 4 of the R07DS0628EJ0200 datasheet.

What is the gate threshold voltage range for RJK0701DPP-E0#T2?

The gate-to-source cutoff voltage VGS(off) for RJK0701DPP-E0#T2 is specified as 2.0–4.0 V at VDS = 10 V and ID = 1 mA. This ensures reliable turn-on with standard 5 V or 10 V gate drivers while maintaining low leakage below logic-high thresholds.

Is RJK0701DPP-E0#T2 suitable for synchronous rectification applications?

Yes, the RJK0701DPP-E0#T2 is well-suited for synchronous rectification due to its low 3.0 mΩ RDS(on), 0.85 V typical body diode forward voltage at 100 A, and 65 ns reverse recovery time-key parameters that reduce conduction and switching losses compared to Schottky diodes in 48 V output stages.

What package type does RJK0701DPP-E0#T2 use, and is the drain electrically isolated?

RJK0701DPP-E0#T2 uses the TO-220FP package (RENESAS code PRSS0003AG-A), where the drain is internally connected to the metal tab but electrically isolated from the mounting surface via molded plastic. This allows direct heatsink attachment without additional insulation hardware, unlike standard TO-220 variants.

RJK0701DPP-E0#T2 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
3.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
10000 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
30W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

RJK0701DPP-E0#T2 FAQ

1.How can I place an order for RJK0701DPP-E0#T2 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0701DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0701DPP-E0#T2 reliable?

The price and inventory of RJK0701DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0701DPP-E0#T2 is usually 5 days.

3.What payment methods are accepted for RJK0701DPP-E0#T2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0701DPP-E0#T2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0701DPP-E0#T2?

RJK0701DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0701DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0701DPP-E0#T2?

For technical support, including RJK0701DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0701DPP-E0#T2 requirements.

6.How does Aetrix verify that RJK0701DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?

All RJK0701DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0701DPP-E0#T2 meets industry standards.

7.What is the process for return or replacement of RJK0701DPP-E0#T2?

All RJK0701DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0701DPP-E0#T2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0701DPP-E0#T2 part is unused and in its original packaging.

Return procedure for RJK0701DPP-E0#T2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK0701DPP-E0#T2 Tags

  • RJK0701DPP-E0#T2
  • RJK0701DPP-E0#T2 PDF
  • RJK0701DPP-E0#T2 Datasheet
  • RJK0701DPP-E0#T2 Specifications
  • RJK0701DPP-E0#T2 Images
  • Renesas
  • Renesas RJK0701DPP-E0#T2
  • Buy RJK0701DPP-E0#T2
  • RJK0701DPP-E0#T2 Price
  • RJK0701DPP-E0#T2 Distributor
  • RJK0701DPP-E0#T2 Supplier
  • RJK0701DPP-E0#T2 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER