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Renesas RJK0702DPN-E0#T2

Part No.:
RJK0702DPN-E0#T2
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixRJK0702DPN-E0#T2.pdf
Description:
MOSFET N-CH 75V 90A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:14,917

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Product details

Overview

RJK0702DPN-E0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC conversion and motor drive switching. It delivers 75 V VDSS, 90 A continuous drain current, and a low 3.9 mΩ typical RDS(on) at VGS = 10 V in a TO-220AB package-enabling efficient 48 V industrial power supplies and brushed DC motor H-bridge legs.

For engineers reviewing the RJK0702DPN-E0#T2 datasheet, RJK0702DPN-E0#T2 pinout, RJK0702DPN-E0#T2 application, or RJK0702DPN-E0#T2 equivalent, key selection criteria include avalanche energy rating (304 mJ), gate charge (89 nC), body diode reverse recovery time (60 ns), and thermal impedance (0.83 °C/W) for thermally constrained board layouts.

Technical Context

This MOSFET uses a trench-gate silicon process optimized for low conduction loss and fast switching. Its 4.8 mΩ max RDS(on) and 6450 pF Ciss support high-efficiency synchronous rectification in 50–75 V systems, while the 1.5 Ω gate resistance and 33 nC Qgs enable stable gate drive with standard 12 V logic-level controllers.

The device integrates a robust body diode rated for 90 A continuous reverse current and 60 ns trr, making it suitable for freewheeling paths in hard-switched topologies. Absolute maximum channel temperature is 150 °C, with derating beginning at Tc > 25 °C per the published thermal curve.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS75 V - supports 48 V nominal bus designs with 50 % voltage margin against transients
ID (continuous)90 A - enables single-device implementation of 1–2 kW power stages without paralleling
RDS(on) typ.3.9 mΩ at VGS = 10 V - yields ≤ 31.6 W conduction loss at 90 A, critical for thermal management
Qg89 nC - determines gate driver power requirement and switching loss in hard-switched converters
EAS304 mJ - allows safe single-pulse inductive energy absorption up to 45 A avalanche current
tr/tf12 ns / 15 ns - enables ≥ 500 kHz switching in resonant or phase-shifted topologies
θch-c0.83 °C/W - defines minimum heatsink interface area needed to maintain Tch ≤ 150 °C at Pch = 150 W

Pinout & Package

Package: TO-220AB (RENESAS code PRSS0004AG-A), through-hole, isolated tab, 3-pin configuration with dual-drain terminals for enhanced current handling and thermal path symmetry.

Pin/TerminalCircuit RoleDesign Meaning
1GateHigh-impedance MOS control input; requires ≤ 1.5 Ω series gate resistor to damp ringing from 1.5 Ω intrinsic Rg
2 & 4DrainHigh-side or low-side power switch node; both pins electrically connected to internal die drain metallization
3SourceReference node for gate drive and current sensing; ties directly to PCB ground plane or shunt resistor

Key Features

FeatureDesign Value
Low RDS(on) with 10 V gate drive3.9 mΩ typ. enables <10 W conduction loss at 45 A in 48 V telecom PSUs
Fast switching with controlled Qgd/Qgs ratio13 nC Qgd vs. 33 nC Qgs reduces Miller-induced shoot-through risk in half-bridge configurations
Robust body diode with low VDF0.85 V typ. forward drop at 90 A minimizes freewheeling loss in motor drive recirculation paths
Avalanche-rated operation304 mJ EAS supports unclamped inductive switching in relay drivers and solenoid controls

Applications

Industrial DC-DC ConvertersBrushed DC Motor Drives

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated flyback or forward converter for factory automation I/O modules.

IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into transformer primary; operates at 100–300 kHz with hard switching.

Use Value: 3.9 mΩ RDS(on) reduces conduction loss by >35 % versus 6.5 mΩ alternatives, improving full-load efficiency from 89 % to 92 %.

Use Scenario: Low-side switch in H-bridge driving 24–48 V brushed DC motors in robotic joint actuators.

IC Role / Device Role / Timing Role: Synchronous freewheeling path controller; conducts reverse current during PWM off-time via integrated body diode.

Use Value: 60 ns trr and 0.85 V VDF cut body-diode switching loss by 42 % compared to standard 1.2 V diodes, reducing junction temperature rise.

Uninterruptible Power SuppliesElectric Vehicle Auxiliary Systems

Use Scenario: Output rectifier in 72 V battery-backed UPS inverter stage delivering 1–3 kVA AC output.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes; commutated by precise gate timing synchronized to AC waveform zero-crossings.

Use Value: 90 A ID rating and 0.83 °C/W θch-c allow direct heatsink mounting without thermal derating at ambient 60 °C.

Use Scenario: Load switch for 12 V auxiliary power distribution in EV battery management subsystems.

IC Role / Device Role / Timing Role: High-reliability power enable/disconnect element; subjected to load dump transients and cold-crank conditions.

Use Value: 75 V VDSS and ±20 V VGSS withstand ISO 7637-2 Pulse 5a (120 V/100 ms) without clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXTH90N075L2Higher RDS(on) (5.2 mΩ), lower Qg (68 nC), TO-247 packageBetter switching loss but higher conduction loss; requires larger heatsink at >60 APrefer for >300 kHz SMPS where gate drive loss dominates
IRFB4115PBFSame VDSS (75 V), higher RDS(on) (5.5 mΩ), TO-220AB packageLower cost but 40 % higher conduction loss at 90 A; no avalanche rating specifiedAcceptable for non-critical 48 V loads where avalanche immunity is not required

Compared with IXTH90N075L2 and IRFB4115PBF, the RJK0702DPN-E0#T2 offers the lowest RDS(on) in TO-220AB, enabling higher power density in space-constrained industrial enclosures without sacrificing avalanche ruggedness or thermal performance.

Availability

RJK0702DPN-E0#T2 is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushed DC motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for RJK0702DPN-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The RJK0702DPN-E0#T2 belongs to Renesas' high-current discrete power MOSFET product line, engineered specifically for ruggedized industrial power conversion where low on-resistance, avalanche capability, and thermal reliability are mandatory.

FAQ

What is the maximum continuous drain current rating for RJK0702DPN-E0#T2?

The RJK0702DPN-E0#T2 is rated for 90 A continuous drain current (ID) at Tc = 25 °C. This rating assumes proper heatsinking to maintain case temperature within limits; derating applies above 25 °C per the published thermal curve. At Tc = 100 °C, the usable ID drops to approximately 55 A.

Does RJK0702DPN-E0#T2 have avalanche capability, and what is its rated energy?

Yes, the RJK0702DPN-E0#T2 is fully avalanche-rated with a specified single-pulse avalanche energy (EAS) of 304 mJ at Tch = 25 °C, L = 100 μH, and Rg ≥ 50 Ω. This rating enables reliable operation in inductive switching applications such as relay drivers and solenoid controls without external snubbers.

What is the gate threshold voltage range for RJK0702DPN-E0#T2?

The gate-to-source cutoff voltage (VGS(off)) for RJK0702DPN-E0#T2 is specified from 2.0 V to 4.0 V at VDS = 10 V and ID = 1 mA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining low leakage below 2 V.

Can RJK0702DPN-E0#T2 be used in synchronous rectification applications?

Yes, the RJK0702DPN-E0#T2 is suitable for synchronous rectification due to its low 3.9 mΩ RDS(on), fast 12 ns rise time, and 60 ns body diode reverse recovery time. Its TO-220AB package supports direct heatsink mounting, critical for managing power dissipation in high-current secondary-side rectifiers.

What is the thermal resistance from channel to case for RJK0702DPN-E0#T2?

The channel-to-case thermal impedance (θch-c) of the RJK0702DPN-E0#T2 is 0.83 °C/W, measured under standard test conditions. This value is essential for calculating junction temperature rise and selecting appropriate heatsink interface materials and mounting pressure to ensure Tch remains ≤ 150 °C.

RJK0702DPN-E0#T2 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
90A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
89 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
6450 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

RJK0702DPN-E0#T2 FAQ

1.How can I place an order for RJK0702DPN-E0#T2 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK0702DPN-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK0702DPN-E0#T2 reliable?

The price and inventory of RJK0702DPN-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0702DPN-E0#T2 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0702DPN-E0#T2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK0702DPN-E0#T2?

RJK0702DPN-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK0702DPN-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK0702DPN-E0#T2?

For technical support, including RJK0702DPN-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0702DPN-E0#T2 requirements.

6.How does Aetrix verify that RJK0702DPN-E0#T2 is sourced from the original manufacturer or authorized distributors?

All RJK0702DPN-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0702DPN-E0#T2 meets industry standards.

7.What is the process for return or replacement of RJK0702DPN-E0#T2?

All RJK0702DPN-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0702DPN-E0#T2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK0702DPN-E0#T2 part is unused and in its original packaging.

Return procedure for RJK0702DPN-E0#T2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RJK0702DPN-E0#T2 Tags

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