Renesas RJK0703DPN-A0#T2

Overview

RJK0703DPN-A0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-current switching in DC-DC converters, motor drives, and industrial power supplies. It delivers 75 V V_DSS, 70 A continuous drain current at T_c = 25°C, and a low R_DS(on) of 5.3 mΩ (typ.) at V_GS = 10 V, housed in a TO-220ABA package with integrated body diode.

For engineers reviewing the RJK0703DPN-A0#T2 datasheet, RJK0703DPN-A0#T2 pinout, RJK0703DPN-A0#T2 application, or RJK0703DPN-A0#T2 equivalent, this device is selected for high-efficiency, medium-voltage power conversion where thermal performance, fast switching (t_d(on) = 30 ns), and avalanche ruggedness (E_AS = 184 mJ) are critical design requirements.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and controlled gate charge (Q_g = 56 nC). Its dynamic parameters-including C_iss = 4150 pF, C_oss = 830 pF, and Q_gd/Q_gs ratio of 0.4-support stable operation in hard-switched topologies with minimal voltage overshoot during turn-off.

The device features a rated channel temperature of 150°C, θ_ch–c = 1.0°C/W, and is qualified to Standard quality grade per Renesas specification-intended for industrial, computing, and consumer equipment-not automotive or safety-critical systems.

Key Specifications

Pinout & Package

Package: TO-220ABA (RENESAS code PRSS0004AT-A), through-hole, isolated tab, 3-pin configuration with dual drain terminals for enhanced current handling and thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTH75N10L2 and STP75NF75, the RJK0703DPN-A0#T2 offers superior current density and lower switching loss in TO-220ABA form factor-making it optimal for space-constrained, high-efficiency 48 V industrial power stages where thermal coupling to heatsink is critical.

Availability

RJK0703DPN-A0#T2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for RJK0703DPN-A0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The RJK series targets high-performance discrete power MOSFETs for industrial-grade power conversion-designed to balance low R_DS(on), fast switching, and ruggedness in cost-sensitive, high-volume applications.

FAQ

What is the maximum continuous drain current rating for RJK0703DPN-A0#T2?

The RJK0703DPN-A0#T2 is rated for 70 A continuous drain current at case temperature T_c = 25°C. Derating is required above 25°C per the Power vs. Temperature Derating curve on page 3 of the datasheet; at T_c = 100°C, the usable I_D drops to approximately 35 A. This rating assumes proper heatsinking with θ_ch–c = 1.0°C/W and no ambient airflow limitations. The RJK0703DPN-A0#T2 must be mounted to a heatsink capable of maintaining T_c ≤ 100°C under full load.

Does RJK0703DPN-A0#T2 support logic-level gate drive?

The RJK0703DPN-A0#T2 has a gate threshold voltage V_GS(off) of 2.0–4.0 V, but its R_DS(on) is specified at V_GS = 10 V (5.3 mΩ typ.). At V_GS = 5 V, R_DS(on) rises significantly-typically >15 mΩ-increasing conduction loss by over 200%. Therefore, the RJK0703DPN-A0#T2 is not a true logic-level MOSFET; it requires a 10 V gate drive for optimal performance. For 3.3 V or 5 V control, a gate driver IC or level shifter is recommended to ensure full enhancement of the RJK0703DPN-A0#T2.

What is the avalanche energy rating of RJK0703DPN-A0#T2 and how is it tested?

The RJK0703DPN-A0#T2 is rated for 184 mJ single-pulse avalanche energy (E_AS) under conditions of L = 100 µH, T_ch = 25°C, and R_g ≥ 50 Ω. This rating reflects the device's ability to absorb inductive energy during unclamped inductive switching events-such as motor phase commutation or relay de-energization-without failure. The test is performed per JEDEC standards using a defined inductive load and gate resistance; repeated avalanching is not guaranteed. The RJK0703DPN-A0#T2 should not be operated continuously in avalanche mode.

Is RJK0703DPN-A0#T2 RoHS compliant and halogen-free?

Yes, the RJK0703DPN-A0#T2 complies with the EU RoHS Directive (2011/65/EU) and is halogen-free per Renesas' environmental specifications. The device uses lead-free matte tin plating on leads and meets J-STD-609 Class 1 definition for halogen content (<900 ppm bromine, <900 ppm chlorine, total halogens <1500 ppm). Compliance documentation, including material declarations and test reports, is available upon request from Aetrix Electronics for the RJK0703DPN-A0#T2.

What is the thermal resistance from channel to case (θ_ch–c) for RJK0703DPN-A0#T2?

The RJK0703DPN-A0#T2 has a designed target maximum channel-to-case thermal resistance (θ_ch–c) of 1.0°C/W, measured under Renesas' standardized test condition with the device mounted to a copper heatsink using thermal compound. This value is not production-tested but represents the thermal performance achievable with proper mechanical mounting-flat surface contact, adequate torque (0.5–0.7 N·m), and uniform thermal interface material. Real-world θ_ch–c depends on heatsink flatness, mounting pressure, and TIM quality; the RJK0703DPN-A0#T2 requires careful thermal design to maintain T_ch ≤ 150°C.