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Renesas RJK1001DPN-E0#T2
- Part No.:
- RJK1001DPN-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
RJK1001DPN-E0#T2.pdf
- Description:
- MOSFET N-CH 100V 80A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,363
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Product details
Overview
RJK1001DPN-E0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-current switching in DC-DC converters, motor drives, and industrial power supplies. It delivers 100 V VDSS, 80 A continuous drain current (ID), and ultra-low on-resistance of 4.4 mΩ (typ. at VGS = 10 V) in a TO-220AB package.
For engineers reviewing the RJK1001DPN-E0#T2 datasheet, RJK1001DPN-E0#T2 pinout, RJK1001DPN-E0#T2 application, or RJK1001DPN-E0#T2 equivalent, key selection criteria include avalanche energy rating (160 mJ), gate charge (147 nC), body-diode reverse recovery time (75 ns), thermal impedance (0.63 °C/W), and safe operating area limits under pulse conditions.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(on) and fast switching with minimal gate drive requirements. Its 100 V breakdown voltage supports 48 V bus systems with margin, while the 240 A peak drain current (pulse) enables robust short-circuit handling in motor control inverters.
The device integrates a co-packaged body diode with 0.85 V forward voltage (typ. at IF = 80 A) and 75 ns reverse recovery time-critical for synchronous rectification and freewheeling in hard-switched topologies. Thermal design is anchored by a channel-to-case impedance of 0.63 °C/W and 150 °C maximum channel temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands 48 V nominal bus with ≥2× overvoltage margin for transient suppression |
| RDS(on) | 4.4 mΩ typ. at VGS = 10 V - Enables <1 W conduction loss at 40 A, reducing heatsink size |
| ID | 80 A continuous - Supports high-power motor drivers and industrial SMPS output stages |
| Qg | 147 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak drivers |
| EAS | 160 mJ - Specifies single-pulse avalanche energy capability for inductive load switching reliability |
| tr/tf | 20 ns / 22 ns - Enables >500 kHz switching in resonant or hard-switched converters |
| VGS(off) | 2.0–4.0 V - Ensures stable turn-off under noise-prone industrial environments |
Pinout & Package
Package: TO-220AB (RENESAS code PRSS0004AG-A), through-hole, isolated tab, 3-pin configuration with dual-drain terminals for enhanced current handling and thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input; requires ≤147 nC charge to fully enhance; sensitive to ESD (±20 V max) |
| 2 & 4 | Drain | High-side switch node; electrically connected internally; used for PCB copper pour attachment to heatsink |
| 3 | Source | Power return path; referenced to gate drive ground; carries full load current and body-diode reverse recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with high VDSS | 4.4 mΩ @ 100 V enables high-efficiency 48 V systems without paralleling devices |
| Fast switching with low Qg/Qgd | 147 nC total gate charge and 30 nC gate-to-drain charge minimize Miller-induced shoot-through risk |
| Robust avalanche capability | 160 mJ rated energy allows reliable operation during inductive load interruption without external snubbers |
| Optimized body diode | 75 ns trr and 0.85 V VDF reduce switching losses in freewheeling and synchronous rectifier modes |
| Thermally efficient package | 0.63 °C/W θch-c supports 200 W channel dissipation with modest heatsinking at Tc = 25 °C |
Applications
| Industrial Motor Drives | Server/Telecom DC-DC Converters |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 80 A peak phase current with <20 ns rise/fall times. Use Value: Low 4.4 mΩ RDS(on) reduces conduction loss by >30% vs. comparable 100 V MOSFETs, improving system efficiency at full load. |
Use Scenario: Primary-side synchronous rectifier in 48 V–12 V isolated buck converters for AI server power delivery. IC Role / Device Role / Timing Role: Secondary-side power switch; operates in hard-switched mode with 500 kHz PWM frequency. Use Value: 75 ns body-diode trr minimizes reverse recovery loss, enabling >95% efficiency at 100 A output without active clamp. |
| Uninterruptible Power Supplies | EV Onboard Chargers |
|
Use Scenario: Bidirectional DC link switch in line-interactive UPS inverters supporting 1–3 kVA output. IC Role / Device Role / Timing Role: Main power switch in H-bridge topology; subjected to repetitive avalanche during battery discharge transients. Use Value: 160 mJ EAS rating ensures reliable operation during grid dropout events without derating or external protection. |
Use Scenario: AC-DC PFC boost switch in 6.6 kW OBCs for light-duty EVs. IC Role / Device Role / Timing Role: Fast-switching boost transistor; driven at 100–150 kHz with 10 V gate voltage. Use Value: 147 nC Qg enables use of cost-effective gate drivers while maintaining <53 ns turn-on delay for tight loop control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N10F7 | RDS(on) = 6.5 mΩ (higher), Qg = 120 nC (lower), TO-220FP package (non-isolated tab) | Limited to lower-current designs due to higher conduction loss; unsuitable where thermal isolation is required | Prefer RJK1001DPN-E0#T2 when board-level isolation or >60 A continuous current is needed |
| IXTH80N10L2 | RDS(on) = 5.2 mΩ, EAS = 120 mJ (lower), TO-247AC package (larger footprint) | Lower avalanche margin restricts use in unclamped inductive loads; larger package increases layout area | Choose RJK1001DPN-E0#T2 for space-constrained 48 V systems requiring guaranteed 160 mJ avalanche performance |
Compared with STP110N10F7 and IXTH80N10L2, the RJK1001DPN-E0#T2 offers the lowest RDS(on) in TO-220AB, superior avalanche ruggedness, and thermally isolated mounting-making it optimal for high-reliability industrial power stages where efficiency, robustness, and PCB real estate are jointly constrained.
Availability
RJK1001DPN-E0#T2 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for RJK1001DPN-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK1001DPN-E0#T2 belongs to Renesas' high-current power MOSFET product line, engineered for efficiency-critical 48 V and 100 V industrial power conversion systems demanding low RDS(on), fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current rating for RJK1001DPN-E0#T2?
The RJK1001DPN-E0#T2 is rated for 80 A continuous drain current (ID) at Tc = 25 °C with proper heatsinking. Derating applies above 25 °C case temperature per the power vs. temperature curve on page 3 of the datasheet; at 100 °C case, usable current drops to approximately 40 A.
Does RJK1001DPN-E0#T2 have avalanche capability, and how is it specified?
Yes, the RJK1001DPN-E0#T2 is fully rated for repetitive avalanche operation with EAS = 160 mJ (single-pulse, L = 100 μH, Tch = 25 °C, Rg ≥ 50 Ω). This specification is validated per JEDEC standards and enables reliable inductive load switching without external snubbers in properly designed circuits.
What is the gate-to-source threshold voltage range for RJK1001DPN-E0#T2?
The gate-to-source cutoff voltage (VGS(off)) for RJK1001DPN-E0#T2 is specified from 2.0 V to 4.0 V at VDS = 10 V and ID = 1 mA. This ensures stable turn-off behavior in noisy industrial environments while allowing full enhancement at standard 10 V gate drive.
Can RJK1001DPN-E0#T2 be used in synchronous rectification applications?
Yes, the RJK1001DPN-E0#T2 is suitable for synchronous rectification due to its low 0.85 V typical body-diode forward voltage (VDF) and fast 75 ns reverse recovery time (trr). These characteristics reduce conduction and switching losses compared to Schottky alternatives in 48 V–60 V secondary-side applications.
What package type does RJK1001DPN-E0#T2 use, and is the drain electrically isolated?
The RJK1001DPN-E0#T2 uses the TO-220AB package (RENESAS code PRSS0004AG-A) with an electrically isolated drain tab. Pins 2 and 4 are both drain terminals, and the metal tab is internally connected to drain-enabling direct heatsink mounting without insulating hardware when isolation is not required.
RJK1001DPN-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 147 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 10000 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
RJK1001DPN-E0#T2 FAQ
1.How can I place an order for RJK1001DPN-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1001DPN-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1001DPN-E0#T2 reliable?
The price and inventory of RJK1001DPN-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1001DPN-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJK1001DPN-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1001DPN-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1001DPN-E0#T2?
RJK1001DPN-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1001DPN-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1001DPN-E0#T2?
For technical support, including RJK1001DPN-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1001DPN-E0#T2 requirements.
6.How does Aetrix verify that RJK1001DPN-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK1001DPN-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1001DPN-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJK1001DPN-E0#T2?
All RJK1001DPN-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK1001DPN-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1001DPN-E0#T2 part is unused and in its original packaging.
Return procedure for RJK1001DPN-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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