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Renesas RJK1002DPN-A0#T2
- Part No.:
- RJK1002DPN-A0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
RJK1002DPN-A0#T2.pdf
- Description:
- MOSFET N-CH 100V 70A TO220ABA
- Quantity:
- Payment:
- Shipping:
Inventory:9,301
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Product details
Overview
RJK1002DPN-A0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-current switching in DC-DC converters, motor drives, and industrial power supplies. It delivers 100 V VDSS, 70 A continuous drain current at Tc = 25°C, and a low RDS(on) of 6.0 mΩ (typ.) at VGS = 10 V, enabling efficient high-power operation in compact TO-220ABA packages.
For engineers reviewing the RJK1002DPN-A0#T2 datasheet, RJK1002DPN-A0#T2 pinout, RJK1002DPN-A0#T2 application, or RJK1002DPN-A0#T2 equivalent, key selection criteria include avalanche energy rating (123 mJ), gate charge (94 nC), thermal impedance (0.83°C/W), and body-diode reverse recovery time (65 ns) - all critical for hard-switching and synchronous rectification designs.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its 100 V breakdown voltage supports 48 V bus systems with margin, while the 7.6 mΩ max RDS(on) ensures minimal I²R losses under full-load conditions. The device features a robust body diode with 70 A reverse drain current capability and 65 ns trr for reduced switching loss in freewheeling paths.
Thermal design is enabled by its 0.83°C/W channel-to-case thermal impedance and 150°C maximum channel temperature. Gate drive requirements are moderate: VGS(off) ranges from 2.0–4.0 V, and total gate charge is 94 nC at VDD = 50 V, supporting standard 10 V gate drivers without excessive Miller effect concerns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports 48 V nominal bus systems with 100 % overvoltage margin for transient suppression. |
| RDS(on) (max) | 7.6 mΩ at ID = 35 A, VGS = 10 V - Enables ≤ 9.3 W conduction loss at 70 A (derated), reducing heatsink size. |
| ID (cont) | 70 A at Tc = 25°C - Sustains high-current loads in motor H-bridges and server VRMs without derating. |
| EAS | 123 mJ at L = 100 µH, Tch = 25°C - Withstands single-pulse inductive energy in relay/snubberless flyback designs. |
| Qg | 94 nC - Requires ~0.94 µC gate drive per switching cycle at 10 kHz, compatible with standard MOSFET drivers. |
| tr/tf | 13 ns / 13 ns - Enables >1 MHz switching in resonant topologies with minimal dead-time overhead. |
| θch-c | 0.83°C/W - Allows direct mounting to heatsinks; 150°C Tch limit permits ~125 W dissipation at 25°C ambient with 0.5°C/W system θJA. |
Pinout & Package
Package: TO-220ABA (RENESAS code PRSS0004AT-A), JEDEC-compliant, through-hole, isolated tab, 2.1 g mass. Mounting requires mechanical isolation unless drain is referenced to chassis ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives gate drive signal; 1.5 Ω internal gate resistance limits dV/dt-induced ringing. |
| 2 & 4 (Drain) | High-side power terminal | Electrically connected pins; carries full load current and withstands 100 V transients; tied to heatsink if non-isolated mounting. |
| 3 (Source) | Power return reference | Serves as local ground reference for gate drive; must be low-inductance path to minimize VGS instability during switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 6.0 mΩ typ. at VGS = 10 V reduces conduction loss by ≥35 % vs. comparable 100 V MOSFETs in 48 V telecom PSUs. |
| Fast switching | 40 ns td(on), 80 ns td(off), and 13 ns rise/fall times enable high-frequency ZVS/ZCS operation in LLC resonant converters. |
| Robust body diode | VDF = 0.85 V typ. at 70 A and trr = 65 ns support synchronous rectification replacement in secondary-side SMPS without external Schottky. |
| Avalanche-rated | 123 mJ EAS allows safe operation in inductive load switching without snubbers in industrial motor control. |
| Standard-grade reliability | Qualified for computers, industrial robots, and office equipment per Renesas quality classification - not for automotive safety-critical use. |
Applications
| Motor Drive Inverter | Server VRM High-Side Switch |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for factory automation actuators. IC Role / Device Role / Timing Role: High-side N-channel switch handling 70 A peak phase current with 100 V bus transients. Use Value: Low 6.0 mΩ RDS(on) minimizes heat generation during 100 % duty-cycle braking; 123 mJ avalanche rating absorbs back-EMF spikes. | Use Scenario: Primary-side high-side switch in multiphase buck converters supplying CPU/GPU core voltage in datacenter servers. IC Role / Device Role / Timing Role: Fast-turning power switch operating at 300–600 kHz with tight gate timing control. Use Value: 94 nC Qg and 13 ns tr/tf reduce driver power and dead-time loss; TO-220ABA enables manual rework and thermal monitoring. |
| Industrial DC-DC Converter | Uninterruptible Power Supply (UPS) Output Stage |
Use Scenario: Isolated forward or active-clamp forward converter primary switch in 48 V input telecom rectifiers. IC Role / Device Role / Timing Role: Main power switch subjected to repetitive 100 V drain spikes and 70 A pulsed currents. Use Value: 0.83°C/W θch-c and 150°C Tch allow sustained 100 W dissipation on standard heatsinks; 7.6 mΩ max RDS(on) ensures efficiency compliance at full load. | Use Scenario: Output H-bridge stage in line-interactive UPS inverters delivering 1 kVA sinusoidal output. IC Role / Device Role / Timing Role: Bidirectional switching element managing battery-to-AC conversion with body-diode conduction during zero-crossing. Use Value: 65 ns trr and 0.85 V VDF minimize distortion and heating in quasi-sine PWM; 70 A IDR rating handles surge currents during transfer switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH70N10L2 | RDS(on) = 9.0 mΩ (max), Qg = 110 nC, TO-247 package, higher VGS(th) (2.5–4.5 V) | Higher conduction loss and gate drive demand; better suited for lower-frequency, higher-voltage industrial inverters | Select when board layout accommodates larger TO-247 and thermal budget allows +30 % RDS(on) penalty. |
| STP70NF10 | RDS(on) = 11.5 mΩ (max), Qg = 140 nC, TO-220FP package, no avalanche rating specified | Lacks EAS spec and has slower switching; limited to non-inductive or snubber-protected topologies | Choose only for cost-sensitive, low-reliability consumer-grade 48 V supplies where avalanche immunity is not required. |
Compared with IXTH70N10L2 and STP70NF10, RJK1002DPN-A0#T2 offers superior RDS(on), lower Qg, and guaranteed avalanche ruggedness - making it optimal for high-efficiency, high-reliability 48 V industrial power stages where thermal headroom and transient robustness are constrained.
Availability
RJK1002DPN-A0#T2 is available at Aetrix Electronics and suitable for motor drives, server VRMs, industrial DC-DC converters, and UPS output stages requiring stable component supply and long-term production continuity.
Supply support for RJK1002DPN-A0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK1002DPN-A0#T2 belongs to Renesas' standard-grade power MOSFET product line, engineered for high-current, high-efficiency switching in computing, industrial automation, and communications power systems - not for automotive or safety-critical applications.
FAQ
What is the maximum continuous drain current rating for RJK1002DPN-A0#T2?
The RJK1002DPN-A0#T2 is rated for 70 A continuous drain current (ID) at case temperature Tc = 25°C, as specified in the Absolute Maximum Ratings table. At elevated case temperatures, this rating decreases per the Power vs. Temperature Derating curve on page 3 of the datasheet - e.g., ~45 A at Tc = 100°C. This value assumes proper heatsinking and does not apply to PCB-mounted operation without thermal interface.
Does RJK1002DPN-A0#T2 have avalanche capability, and how is it characterized?
Yes, RJK1002DPN-A0#T2 is fully avalanche-rated with EAS = 123 mJ (single-pulse) at L = 100 µH, Tch = 25°C, and Rg ≥ 50 Ω. This rating is measured under controlled conditions and confirms ruggedness against inductive switching transients. The device also specifies IAP = 35 A avalanche peak current, enabling reliable operation in motor drive and relay-driving applications without external clamping.
What is the gate-to-source threshold voltage range for RJK1002DPN-A0#T2?
The gate-to-source threshold voltage (VGS(off)) for RJK1002DPN-A0#T2 is specified as 2.0–4.0 V at VDS = 10 V and ID = 1 mA. This range indicates the minimum VGS needed to initiate conduction. For full enhancement and low RDS(on), the datasheet recommends VGS = 10 V - at which point RDS(on) reaches its typical 6.0 mΩ value.
Can RJK1002DPN-A0#T2 be used in synchronous rectification applications?
Yes, RJK1002DPN-A0#T2 is suitable for synchronous rectification due to its low VDF = 0.85 V (typ.) and fast trr = 65 ns body-diode performance at IF = 70 A. These characteristics reduce conduction loss and reverse recovery loss compared to discrete Schottky diodes in secondary-side 12–48 V DC-DC converters, especially in high-frequency (>300 kHz) topologies where diode losses dominate.
What package type and mounting considerations apply to RJK1002DPN-A0#T2?
RJK1002DPN-A0#T2 uses the TO-220ABA package (RENESAS code PRSS0004AT-A), featuring an electrically isolated metal tab. Pin 2 and Pin 4 are internally connected to the drain, and the tab is drain-connected - so electrical isolation from heatsink is mandatory unless the drain node is chassis-ground referenced. The 2.1 g mass and 0.83°C/W θch-c require thermally conductive paste and flat-mounting surface for optimal thermal transfer.
RJK1002DPN-A0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 94 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6450 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220ABA
RJK1002DPN-A0#T2 FAQ
1.How can I place an order for RJK1002DPN-A0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1002DPN-A0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1002DPN-A0#T2 reliable?
The price and inventory of RJK1002DPN-A0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1002DPN-A0#T2 is usually 5 days.
3.What payment methods are accepted for RJK1002DPN-A0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1002DPN-A0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1002DPN-A0#T2?
RJK1002DPN-A0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1002DPN-A0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1002DPN-A0#T2?
For technical support, including RJK1002DPN-A0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1002DPN-A0#T2 requirements.
6.How does Aetrix verify that RJK1002DPN-A0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK1002DPN-A0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1002DPN-A0#T2 meets industry standards.
7.What is the process for return or replacement of RJK1002DPN-A0#T2?
All RJK1002DPN-A0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK1002DPN-A0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1002DPN-A0#T2 part is unused and in its original packaging.
Return procedure for RJK1002DPN-A0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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