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Renesas RJK1002DPP-E0#T2
- Part No.:
- RJK1002DPP-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
RJK1002DPP-E0#T2.pdf
- Description:
- MOSFET N-CH 100V 70A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:6,204
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Product details
Overview
RJK1002DPP-E0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-current switching in DC-DC converters, motor drives, and industrial power supplies. It delivers 100 V VDSS, 70 A continuous drain current, and a low 6.0 mΩ RDS(on) at VGS = 10 V in a TO-220FP package with isolated tab.
For engineers reviewing the RJK1002DPP-E0#T2 datasheet, RJK1002DPP-E0#T2 pinout, RJK1002DPP-E0#T2 application, or RJK1002DPP-E0#T2 equivalent, key selection criteria include avalanche energy rating (123 mJ), gate charge (94 nC), thermal impedance (4.17 °C/W), and body diode recovery time (65 ns) in high-reliability industrial power stages.
Technical Context
This MOSFET uses a trench-gate silicon process optimized for low conduction loss and fast switching. Its 6.0 mΩ RDS(on) enables high-efficiency operation at 35 A with minimal I²R heating, while its 94 nC total gate charge supports efficient drive with standard gate drivers.
The device features a robust body diode with 70 A reverse current capability and 65 ns reverse recovery time, making it suitable for synchronous rectification and freewheeling in hard-switched topologies. Its 123 mJ single-pulse avalanche energy rating ensures survivability during transient overvoltage events without external clamping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage before avalanche; defines use in 48 V–72 V bus systems with margin. |
| RDS(on) typ. | 6.0 mΩ at VGS = 10 V - Enables ≤2.2 W conduction loss at 70 A, reducing heatsink requirements. |
| ID continuous | 70 A at Tc = 25°C - Supports high-power motor control and UPS inverters with forced-air cooling. |
| Qg | 94 nC - Determines gate driver power demand; compatible with common 1–2 A peak drivers. |
| EAS | 123 mJ - Specifies single-pulse avalanche energy handling; critical for inductive load switching reliability. |
| trr | 65 ns - Fast body diode recovery minimizes switching loss and voltage spikes in freewheeling paths. |
| θch-c | 4.17 °C/W - Directly relates case temperature rise to channel dissipation; enables thermal modeling of heatsink interface. |
Pinout & Package
Package: TO-220FP (RENESAS code PRSS0003AG-A), plastic molded with isolated metal tab (drain-connected), 3-pin vertical mounting, 1.9 g mass, JEITA-compliant outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate (G) | High-impedance MOSFET control input; requires <20 V absolute max rating and low-inductance PCB routing. |
| 2 (Center) | Drain (D) | Main high-side power terminal; electrically connected to isolated metal tab for heatsinking and EMI shielding. |
| 3 (Right) | Source (S) | Power return path; referenced to gate drive ground; carries full load current and must be low-impedance. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 6.0 mΩ typ. at 10 V gate drive reduces conduction losses by >30% vs. legacy 10 mΩ MOSFETs in 70 A designs. |
| Fast switching | 40 ns turn-on delay + 13 ns rise time enables >200 kHz operation in LLC and phase-shifted full-bridge converters. |
| Robust avalanche rating | 123 mJ single-pulse EAS allows reliable operation under inductive turn-off stress without snubbers. |
| Optimized body diode | 65 ns trr and 0.85 V VDF minimize reverse recovery loss and cross-conduction risk in synchronous rectifiers. |
| Isolated TO-220FP package | Electrically isolated drain tab eliminates need for insulating pads when mounted to grounded heatsinks. |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
Use Scenario: High-current H-bridge for 3-phase BLDC motors in CNC machines and pumps. IC Role / Device Role / Timing Role: Main power switch controlling phase current direction and magnitude via PWM. Use Value: 70 A rating and 6.0 mΩ RDS(on) enable compact inverter design with <1.5°C/W thermal resistance at full load. | Use Scenario: Primary-side switching transistor in 1 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage, high-duty-cycle power switch handling 100 V bus transients and repetitive avalanche stress. Use Value: 123 mJ EAS and 100 V VDSS ensure reliable operation during output short-circuit and line surge events. |
| Solar Microinverter DC-DC Stage | EV Onboard Charger Boost Stage |
Use Scenario: Interleaved boost converter stage stepping up PV string voltage (60–100 V) to 400 V DC link. IC Role / Device Role / Timing Role: High-efficiency, high-frequency switching element operating at 100–150 kHz with zero-voltage switching assist. Use Value: 94 nC Qg and 65 ns trr reduce gate drive loss and body diode conduction loss, improving conversion efficiency by 0.4% at 500 W. | Use Scenario: Boost switch in bidirectional OBC converting AC grid to 400 V/800 V battery bus. IC Role / Device Role / Timing Role: Bidirectional power switch supporting both charging and vehicle-to-grid (V2G) modes. Use Value: 70 A ID and isolated TO-220FP package support high-current, thermally demanding dual-mode operation with simplified thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP70NF10 | RDS(on) = 12.5 mΩ (higher), Qg = 120 nC (higher), no specified EAS rating | Limited to lower-frequency, lower-efficiency designs due to higher conduction and switching loss | Choose only if cost sensitivity outweighs efficiency and thermal performance requirements |
| IXTH70N10L2 | RDS(on) = 9.5 mΩ, Qg = 75 nC, EAS = 100 mJ, TO-247 package (non-isolated) | Requires insulating hardware for heatsink mounting; lower gate charge but higher on-resistance | Prefer when gate drive efficiency is critical and mechanical isolation is handled externally |
Compared with STP70NF10 and IXTH70N10L2, the RJK1002DPP-E0#T2 offers superior conduction efficiency (6.0 mΩ), integrated thermal isolation, and verified avalanche ruggedness-making it optimal for space-constrained, high-reliability industrial power stages where thermal and transient robustness are prioritized.
Availability
RJK1002DPP-E0#T2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.
Supply support for RJK1002DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.
The RJK1002DPP-E0#T2 belongs to Renesas' high-current trench-MOSFET product line, engineered for efficiency-critical power conversion in industrial automation and renewable energy systems.
FAQ
What is the maximum continuous drain current rating for RJK1002DPP-E0#T2?
The RJK1002DPP-E0#T2 has a maximum continuous drain current (ID) of 70 A at case temperature Tc = 25°C. Derating applies above 25°C per the power vs. temperature curve on page 3 of the datasheet, with 30 W channel dissipation limit and 4.17 °C/W thermal impedance defining safe operating area boundaries.
Does RJK1002DPP-E0#T2 have an electrically isolated package?
Yes, the RJK1002DPP-E0#T2 uses the TO-220FP package (RENESAS code PRSS0003AG-A) with an electrically isolated metal tab connected to the drain. This allows direct mounting to a grounded heatsink without requiring insulating pads or washers, simplifying thermal design and reducing system cost.
What is the typical gate-to-source threshold voltage range for RJK1002DPP-E0#T2?
The RJK1002DPP-E0#T2 has a gate-to-source cutoff voltage (VGS(off)) range of 2.0 V to 4.0 V at VDS = 10 V and ID = 1 mA. This ensures reliable turn-on with standard 10 V gate drive while maintaining low leakage at logic-level gate voltages.
Can RJK1002DPP-E0#T2 be used in avalanche mode, and what is its rated energy?
Yes, the RJK1002DPP-E0#T2 is rated for single-pulse avalanche operation with EAS = 123 mJ at L = 100 µH, Tch = 25°C, and Rg ≥ 50 Ω. This rating is confirmed in the Absolute Maximum Ratings table and supports reliable operation during inductive switching transients without external clamping.
What is the body diode forward voltage of RJK1002DPP-E0#T2 under rated conditions?
The body-drain diode forward voltage (VDF) of the RJK1002DPP-E0#T2 is 0.85 V typical at IF = 70 A and VGS = 0 V, with a maximum of 1.5 V. This low VDF reduces conduction loss during freewheeling and improves efficiency in synchronous rectifier and half-bridge configurations.
RJK1002DPP-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 94 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6450 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
RJK1002DPP-E0#T2 FAQ
1.How can I place an order for RJK1002DPP-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1002DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1002DPP-E0#T2 reliable?
The price and inventory of RJK1002DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1002DPP-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJK1002DPP-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1002DPP-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1002DPP-E0#T2?
RJK1002DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1002DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1002DPP-E0#T2?
For technical support, including RJK1002DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1002DPP-E0#T2 requirements.
6.How does Aetrix verify that RJK1002DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK1002DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1002DPP-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJK1002DPP-E0#T2?
All RJK1002DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK1002DPP-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1002DPP-E0#T2 part is unused and in its original packaging.
Return procedure for RJK1002DPP-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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