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Renesas RJK1003DPN-A0#T2
- Part No.:
- RJK1003DPN-A0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
RJK1003DPN-A0#T2.pdf
- Description:
- MOSFET N-CH 100V 50A TO220ABA
- Quantity:
- Payment:
- Shipping:
Inventory:2,092
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Product details
Overview
RJK1003DPN-A0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-efficiency switching in DC-DC converters and motor drive circuits, featuring 100 V VDSS, 50 A continuous drain current (Tc = 25°C), and a typ. RDS(on) of 8.8 mΩ at VGS = 10 V - enabling low conduction loss in high-current industrial power stages.
For engineers reviewing the RJK1003DPN-A0#T2 datasheet, RJK1003DPN-A0#T2 pinout, RJK1003DPN-A0#T2 application, or RJK1003DPN-A0#T2 equivalent, key selection considerations include its TO-220ABA package thermal performance (θch-c = 1.0 °C/W), avalanche energy rating (EAS = 63 mJ), and fast switching characteristics (td(off) = 60 ns, Qg = 59 nC) under 30 V/25 A conditions.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(on) × Qg figure-of-merit, supporting high-frequency hard-switching in offline SMPS and half-bridge motor control. Its gate threshold voltage (VGS(off) = 2.0–4.0 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility.
The integrated body diode exhibits trr = 55 ns and VDF = 0.85 V (typ.) at IF = 50 A, making it suitable for synchronous rectification and freewheeling paths where reverse recovery behavior impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports 48 V and 72 V bus systems with ≥2× safety margin against transients |
| ID (continuous) | 50 A at Tc = 25°C - enables high-current output stages without parallel devices in compact heatsink designs |
| RDS(on) (typ.) | 8.8 mΩ at VGS = 10 V - delivers ≤2.2 W conduction loss at 50 A, reducing thermal load on PCB |
| Qg | 59 nC - balances switching speed and gate driver power requirement for 100–500 kHz operation |
| EAS | 63 mJ at L = 100 µH - provides single-pulse avalanche ruggedness for inductive load switching without snubbers |
| θch-c | 1.0 °C/W - allows direct mounting to heatsinks for sustained 125 W channel dissipation at Tc ≤ 25°C |
| td(off) | 60 ns - enables precise dead-time control in bridge configurations to prevent shoot-through |
Pinout & Package
Package: TO-220ABA (RENESAS code PRSS0004AT-A), JEDEC-compliant, insulated tab, 2.1 g mass, through-hole mounting with drain-connected tab for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level drive; Rg = 1.6 Ω limits ringing and optimizes dV/dt control |
| 2 & 4 (Drain) | High-side power node | Electrically connected to metal tab; must be isolated from heatsink unless system ground reference permits |
| 3 (Source) | Power return / reference | Serves as local ground for gate drive; low-inductance layout critical for stable switching |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FoM | Typ. 520 mΩ·nC - improves efficiency in high-frequency SMPS by minimizing combined conduction + switching loss |
| Fast body diode recovery | trr = 55 ns - reduces voltage overshoot and EMI during inductive turn-off, easing filter design |
| Avalanche-rated operation | EAS = 63 mJ - eliminates need for external clamping in motor drive flyback or relay coil suppression |
| Thermal robustness | θch-c = 1.0 °C/W - supports >100 W continuous operation with minimal heatsink volume |
| Standard quality grade | Rated for industrial applications including motor drives, UPS, and telecom power supplies per Renesas classification |
Applications
| Industrial Motor Drive | Server PSU Primary Switch |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 40–50 A peak currents at 20–40 kHz PWM frequency. Use Value: Low RDS(on) minimizes I²R heating during continuous torque delivery; fast td(off) enables tight dead-time control to prevent cross-conduction. |
Use Scenario: Primary-side switching transistor in 80+ Titanium-certified 1.5 kW server power supply LLC resonant converter. IC Role / Device Role / Timing Role: Hard-switched main switch operating at 100–300 kHz with 50 A peak drain current during transient loads. Use Value: 8.8 mΩ RDS(on) reduces conduction loss at full load; 59 nC Qg allows efficient gate driving with <1 W driver dissipation. |
| Uninterruptible Power Supply | DC Fast Charging Module |
|
Use Scenario: Bidirectional DC-DC stage in online UPS systems converting between 400 V DC bus and 48 V battery bank. IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch managing 50 A bidirectional current with reverse recovery demands. Use Value: Body diode trr = 55 ns and VDF = 0.85 V reduce reverse recovery loss and forward conduction loss during battery charge/discharge cycles. |
Use Scenario: Output stage switch in 15 kW DC fast charging module regulating 200–1000 V output with 60 A continuous current. IC Role / Device Role / Timing Role: High-voltage, high-current switching device in isolated DC-DC stage with strict thermal constraints. Use Value: 100 V VDSS supports 400 V nominal bus with margin; 1.0 °C/W θch-c enables stable operation at 125 W dissipation without forced air. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH50N10P | RDS(on) = 12 mΩ (typ.), Qg = 65 nC, TO-247 package, higher RDS(on) and larger footprint | Requires larger heatsink area and higher gate drive power; better suited for lower-frequency (<100 kHz) industrial inverters | Select when higher avalanche energy (EAS = 110 mJ) is required and board space permits TO-247 mounting |
| STP50NF10 | RDS(on) = 18 mΩ (typ.), Qg = 95 nC, TO-220FP package, no insulated tab, higher thermal resistance | Limited to lower current density due to θjc = 1.5 °C/W; unsuitable for sustained 50 A operation without derating | Consider only for cost-sensitive, lower-power (<800 W) applications where gate drive capability exceeds 1.5 W |
Compared with IXFH50N10P and STP50NF10, the RJK1003DPN-A0#T2 offers superior RDS(on) × Qg trade-off and lower thermal impedance in a compact insulated TO-220ABA package - delivering higher power density and efficiency in space-constrained 1–2 kW industrial power stages.
Availability
RJK1003DPN-A0#T2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for RJK1003DPN-A0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK1003DPN-A0#T2 belongs to Renesas' high-current, low-RDS(on) power MOSFET product line, engineered for efficiency-critical switching applications in industrial power conversion and motor control systems.
FAQ
What is the maximum continuous drain current rating for RJK1003DPN-A0#T2?
The RJK1003DPN-A0#T2 is rated for 50 A continuous drain current at case temperature Tc = 25°C per its Absolute Maximum Ratings table. At elevated case temperatures, current must be derated linearly using the Pch vs. Tc curve on page 3 of the datasheet - e.g., ~35 A at Tc = 100°C. This rating assumes proper heatsinking and adheres to the 125 W channel dissipation limit.
Does RJK1003DPN-A0#T2 have an insulated package?
Yes, the RJK1003DPN-A0#T2 uses the TO-220ABA package with an electrically insulated metal tab (RENESAS code PRSS0004AT-A). Pin 2 and Pin 4 are internally connected to the drain and to the tab, but the tab is electrically isolated from the mounting surface - allowing direct heatsink attachment without additional insulating hardware, provided the heatsink remains floating or is referenced to drain potential.
What is the typical gate charge (Qg) of RJK1003DPN-A0#T2 and how does it affect driver selection?
The RJK1003DPN-A0#T2 has a typical total gate charge Qg of 59 nC at VDD = 50 V, VGS = 10 V, and ID = 25 A. This value determines gate driver current requirements: for 200 kHz switching, average gate drive power ≈ Qg × VGS × fsw ≈ 118 mW. A driver capable of ≥2 A peak source/sink current ensures clean 10 V transitions within the specified td(on)/td(off) windows.
Can RJK1003DPN-A0#T2 be used in avalanche mode, and what is its rated energy?
Yes, the RJK1003DPN-A0#T2 is fully rated for repetitive avalanche operation with EAS = 63 mJ at L = 100 µH, Tch = 25°C, and Rg ≥ 50 Ω. This enables reliable operation in inductive switching applications - such as relay drivers or motor phase-legs - without external snubbers, provided avalanche pulse conditions stay within the SOA limits shown on page 3 of the datasheet.
What is the body diode forward voltage (VDF) of RJK1003DPN-A0#T2 and why does it matter in synchronous rectification?
The RJK1003DPN-A0#T2 body diode exhibits a typical forward voltage VDF of 0.85 V at IF = 50 A and VGS = 0 V. In synchronous rectification, this VDF sets the minimum voltage drop during freewheeling - directly impacting conduction loss and thermal rise. Combined with trr = 55 ns, it enables efficient replacement of Schottky diodes in medium-voltage, high-current DC-DC outputs where reverse recovery loss dominates.
RJK1003DPN-A0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4150 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220ABA
RJK1003DPN-A0#T2 FAQ
1.How can I place an order for RJK1003DPN-A0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1003DPN-A0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1003DPN-A0#T2 reliable?
The price and inventory of RJK1003DPN-A0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1003DPN-A0#T2 is usually 5 days.
3.What payment methods are accepted for RJK1003DPN-A0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1003DPN-A0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1003DPN-A0#T2?
RJK1003DPN-A0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1003DPN-A0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1003DPN-A0#T2?
For technical support, including RJK1003DPN-A0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1003DPN-A0#T2 requirements.
6.How does Aetrix verify that RJK1003DPN-A0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK1003DPN-A0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1003DPN-A0#T2 meets industry standards.
7.What is the process for return or replacement of RJK1003DPN-A0#T2?
All RJK1003DPN-A0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK1003DPN-A0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1003DPN-A0#T2 part is unused and in its original packaging.
Return procedure for RJK1003DPN-A0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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