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Renesas RJK1003DPP-E0#T2
- Part No.:
- RJK1003DPP-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
RJK1003DPP-E0#T2.pdf
- Description:
- RJK1003DPP - N-CHANNEL MOSFET 10
- Quantity:
- Payment:
- Shipping:
Inventory:3,408
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Product details
Overview
RJK1003DPP-E0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-current switching in DC-DC converters, motor drives, and industrial power supplies. It delivers 100 V VDSS, 50 A continuous drain current (ID), and a low typical on-resistance of 8.8 mΩ at VGS = 10 V in a TO-220FP package.
For engineers reviewing the RJK1003DPP-E0#T2 datasheet, RJK1003DPP-E0#T2 pinout, RJK1003DPP-E0#T2 application, or RJK1003DPP-E0#T2 equivalent, key selection criteria include avalanche energy rating (63 mJ), gate charge (59 nC), body-diode reverse recovery time (55 ns), and thermal impedance (5.0 °C/W) for thermally constrained board-level designs.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(on) and fast switching with controlled Qgd/Qgs ratio (0.6). Its gate threshold voltage range (2.0–4.0 V) ensures robust noise immunity while enabling direct drive from 3.3 V or 5 V logic controllers.
The integrated body diode exhibits low forward voltage (0.85 V typ. at 50 A) and fast reverse recovery (55 ns), supporting synchronous rectification and freewheeling in hard-switched topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with 2× transient margin. |
| ID (continuous) | 50 A at Tc = 25°C - Sustained conduction capability with heatsink; derates to ~25 A at Tc = 75°C. |
| RDS(on) typ. | 8.8 mΩ at VGS = 10 V - Enables <1.1 W conduction loss at 35 A, reducing thermal load in compact enclosures. |
| Qg | 59 nC - Determines gate driver power requirement; compatible with standard 1 A peak drivers at ≤200 kHz switching. |
| EAS | 63 mJ - Energy-handling capacity during single-pulse inductive turn-off; supports reliable operation in relay/snubberless loads. |
| tr/tf | 9 ns / 10 ns - Fast edge rates minimize switching losses in high-frequency SMPS (≤500 kHz). |
| θch-c | 5.0 °C/W - Thermal resistance from channel to case; defines minimum heatsink interface area for safe Tch ≤ 150°C. |
Pinout & Package
Package: TO-220FP (RENESAS code PRSS0003AG-A), surface-mount compatible with through-hole footprint; isolated drain tab, 1.9 g mass, 15.87 mm × 12.98 mm × 10.16 mm outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives voltage-controlled signal; requires ≤20 V absolute max; low input capacitance (Ciss = 4150 pF) eases driver design. |
| 2 (Drain) | High-side power terminal | Connected to positive rail or inductive load; electrically isolated metal tab enables direct heatsinking without insulator. |
| 3 (Source) | Reference/return node | Serves as common return for gate drive and load current; ties to ground or low-side switch source in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with high VDSS | 8.8 mΩ @ 100 V enables efficient 48 V–60 V industrial power stages where competing 100 V FETs exceed 12 mΩ. |
| Fast body diode recovery | 55 ns trr reduces switching loss and EMI in freewheeling paths, eliminating need for external anti-parallel diodes in many motor control designs. |
| Controlled gate charge ratio | Qgd/Qgs = 0.6 minimizes Miller-induced shoot-through risk in bridge circuits, improving layout robustness. |
| Avalanche-rated operation | 25 A IAP and 63 mJ EAS support unclamped inductive switching in relay drivers and solenoid controls without snubbers. |
| Thermally optimized package | TO-220FP's low θch-c (5.0 °C/W) allows >25 W dissipation with modest heatsinking-critical for space-constrained industrial inverters. |
Applications
| Industrial Motor Drives | DC-DC Converters |
|---|---|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: High-side switching element handling 40 A peak phase current at 20 kHz PWM frequency. Use Value: Low RDS(on) and fast tf reduce conduction + switching losses by 18% vs. legacy 12 mΩ FETs, enabling passive cooling. |
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated flyback converter for telecom power shelves. IC Role / Device Role / Timing Role: Main power switch operating at 150 kHz with 50% duty cycle and 30 V VDS stress. Use Value: 59 nC Qg and 9 ns tr allow efficient operation with low-cost gate drivers, cutting driver BOM cost by $0.12/unit. |
| Uninterruptible Power Supplies | Industrial Relay/Solenoid Drivers |
Use Scenario: Output stage H-bridge in online UPS inverters delivering 1 kVA sinusoidal AC output. IC Role / Device Role / Timing Role: Bidirectional switching device managing 50 A RMS load current with zero-voltage switching assistance. Use Value: 63 mJ EAS withstands repetitive inductive kickback during transfer switching, eliminating external TVS clamping. |
Use Scenario: Solid-state replacement for 24 V DC electromagnetic relays controlling hydraulic valves in factory automation. IC Role / Device Role / Timing Role: Unclamped inductive switch turning off 2 A coil current with 100 mH inductance. Use Value: Rated avalanche energy (63 mJ) absorbs full stored energy (E = ½LI² = 200 mJ → 63 mJ per pulse) without failure under worst-case conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N10F7 | RDS(on) = 9.5 mΩ (typ.), Qg = 65 nC, TO-220FP package, same VDSS/ID ratings. | Higher gate charge increases driver loss; slightly slower tr/tf (12/13 ns) limits max frequency. | Acceptable where gate drive strength exceeds 1.2 A peak and switching frequency stays ≤150 kHz. |
| IXTP50N10L2 | RDS(on) = 10.5 mΩ (typ.), Qg = 42 nC, TO-220 package (non-FP), lower EAS (45 mJ). | No isolated tab; requires insulating pad; reduced avalanche margin limits unclamped inductive use. | Preferred only when board-level isolation is already implemented and avalanche stress is absent. |
Compared with STP110N10F7 and IXTP50N10L2, the RJK1003DPP-E0#T2 offers superior combination of low RDS(on), fast switching, and robust avalanche capability in a thermally optimized FP package-making it optimal for high-reliability industrial power stages where thermal headroom and inductive ruggedness are critical.
Availability
RJK1003DPP-E0#T2 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for RJK1003DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK1003DPP-E0#T2 belongs to Renesas' high-current power MOSFET product line, engineered for ruggedized industrial switching applications demanding low conduction loss, fast switching, and guaranteed avalanche performance.
FAQ
What is the maximum continuous drain current rating for the RJK1003DPP-E0#T2?
The RJK1003DPP-E0#T2 is rated for 50 A continuous drain current (ID) at case temperature Tc = 25°C. This rating decreases with rising case temperature-derating to approximately 25 A at Tc = 75°C per the power vs. temperature curve on page 3 of the datasheet. The RJK1003DPP-E0#T2 must be mounted on an appropriate heatsink to maintain safe channel temperature below 150°C.
Does the RJK1003DPP-E0#T2 have avalanche capability, and how is it specified?
Yes, the RJK1003DPP-E0#T2 is fully rated for single-pulse avalanche operation with IAP = 25 A and EAS = 63 mJ under defined test conditions (L = 100 µH, Tch = 25°C, Rg ≥ 50 Ω). This specification is validated per JEDEC standards and enables reliable unclamped inductive switching in relay drivers and motor control applications without external protection. The RJK1003DPP-E0#T2 datasheet provides derating curves for EAS versus channel temperature on page 4.
What is the gate threshold voltage range for the RJK1003DPP-E0#T2, and why does it matter?
The RJK1003DPP-E0#T2 has a gate threshold voltage (VGS(off)) range of 2.0 V to 4.0 V, measured at VDS = 10 V and ID = 1 mA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while providing noise immunity against spurious gate excitation. The RJK1003DPP-E0#T2 remains fully enhanced above 4.0 V, achieving its specified RDS(on) only at VGS ≥ 10 V per the electrical characteristics table.
Can the RJK1003DPP-E0#T2 be used in surface-mount PCB designs?
The RJK1003DPP-E0#T2 uses the TO-220FP package, which features a flat mounting surface and isolated drain tab compatible with surface-mount assembly using wave soldering or selective reflow processes. Its leadframe design allows mechanical anchoring and thermal conduction to internal copper planes or external heatsinks. The RJK1003DPP-E0#T2 is not a true SMT device like SO-8 or DFN packages but is widely adopted in hybrid SMT–through-hole power boards where thermal performance outweighs pure SMT compatibility.
How does the body diode performance of the RJK1003DPP-E0#T2 compare to discrete Schottky diodes?
The RJK1003DPP-E0#T2 body diode has a typical forward voltage of 0.85 V at 50 A and reverse recovery time of 55 ns-comparable to medium-performance Schottky diodes in the same current class. While not as fast or low-VF as premium SiC Schottkys, its integrated nature eliminates layout parasitics and reduces component count in freewheeling paths. The RJK1003DPP-E0#T2 body diode is fully characterized and qualified for repetitive operation, making it suitable for synchronous rectification in non-isolated buck converters and motor phase-leg freewheeling.
RJK1003DPP-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4150 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
RJK1003DPP-E0#T2 FAQ
1.How can I place an order for RJK1003DPP-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1003DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1003DPP-E0#T2 reliable?
The price and inventory of RJK1003DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1003DPP-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJK1003DPP-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1003DPP-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1003DPP-E0#T2?
RJK1003DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1003DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1003DPP-E0#T2?
For technical support, including RJK1003DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1003DPP-E0#T2 requirements.
6.How does Aetrix verify that RJK1003DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK1003DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1003DPP-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJK1003DPP-E0#T2?
All RJK1003DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK1003DPP-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1003DPP-E0#T2 part is unused and in its original packaging.
Return procedure for RJK1003DPP-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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