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Renesas RJK1535DPE-LE
- Part No.:
- RJK1535DPE-LE
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-83
- Datasheet:
-
RJK1535DPE-LE.pdf
- Description:
- 40A, 150V, 0.052OHM, N-CHANNEL M
- Quantity:
- Payment:
- Shipping:
Inventory:7,899
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Product details
Overview
RJK1535DPE-LE from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drive circuits, featuring 150 V VDSS, 40 A continuous drain current, and 0.045 Ω typical RDS(on) at VGS = 10 V.
For engineers reviewing the RJK1535DPE-LE datasheet, RJK1535DPE-LE pinout, RJK1535DPE-LE application, or RJK1535DPE-LE equivalent, this device supports fast-switching industrial power stages requiring low conduction loss, controlled dv/dt, and robust avalanche energy handling up to 67.5 mJ.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and fast switching with Qg = 35 nC and Qgd = 16 nC, enabling efficient operation in hard-switched topologies at frequencies up to several hundred kHz. Its body diode exhibits trr = 110 ns and Qrr = 0.5 μC under 100 A/μs di/dt conditions.
The device operates within a channel temperature range of –55°C to +150°C and features a thermal resistance θch–c of 1.25°C/W, supporting high-power density designs when mounted on thermally optimized PCBs or heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Withstands up to 150 V drain-to-source voltage before breakdown, suitable for 48 V and 100 V bus systems. |
| RDS(on) (typ) | 0.045 Ω - Delivers low conduction loss at 20 A and 10 V gate drive, reducing I²R heating in continuous power stages. |
| ID (cont) | 40 A - Supports sustained load currents up to 40 A at Tc = 25°C, scalable with thermal derating. |
| Qg | 35 nC - Total gate charge determines driver strength requirement; enables <100 ns switching transitions with 10 Ω gate resistor. |
| tr/tf | 170 ns / 80 ns - Fast rise/fall times minimize switching losses in PWM-controlled power converters. |
| EAR | 67.5 mJ - Rated single-pulse avalanche energy ensures ruggedness during inductive load turn-off transients. |
| VGS(off) | 3.0–4.5 V - Gate threshold voltage range confirms enhancement-mode operation and compatibility with standard 5 V or 10 V logic-level drivers. |
Pinout & Package
Package: LDPAK(S)-(1) - Surface-mount, 4-pin, thermally enhanced leadless package with exposed drain pad (PRSS0004AE-B), footprint compatible with SC-83 outline and optimized for low-inductance, high-current PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; ±30 V absolute max rating protects against transient overvoltage. |
| 2 (D) | Drain | Main high-side power terminal; electrically connected to exposed metal pad for thermal and current conduction. |
| 3 (S) | Source | Power return path and reference for gate drive; tied to ground or low-side switch node in half-bridge configurations. |
| 4 (D) | Drain (redundant) | Second drain connection-parallel internal routing to reduce package inductance and improve current sharing in high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.045 Ω typ at VGS = 10 V reduces conduction loss by >30% vs. comparable 150 V MOSFETs, improving efficiency in 12–48 V DC-DC stages. |
| Fast switching | 30 ns td(on), 70 ns td(off), and 170 ns tr enable high-frequency operation (>300 kHz) with minimal overlap loss in synchronous rectifiers. |
| Robust body diode | 110 ns trr and 0.5 μC Qrr support reliable freewheeling in inductive loads without external Schottky clamping in many mid-power applications. |
| Avalanche rated | 67.5 mJ single-pulse EAR allows safe operation under unclamped inductive switching (UIS), eliminating need for snubbers in motor gate drivers. |
| Thermal performance | θch–c = 1.25°C/W enables 100 W channel dissipation at Tc = 25°C, supporting compact thermal design with minimal copper area. |
Applications
| Motor Drive Inverter Stage | Industrial DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or actuators. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling phase current via PWM at 20–100 kHz. Use Value: Low RDS(on) and fast tr/tf reduce total power loss per switch, enabling higher torque density and lower heatsink requirements. | Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward or active-clamp forward converter. IC Role / Device Role / Timing Role: Main power switch turning on/off transformer primary winding with 50–200 kHz duty-cycle modulation. Use Value: 150 V rating provides 2× margin over 48 V bus, while 67.5 mJ EAR withstands leakage inductance spikes without clamping circuitry. |
| Solar Microinverter DC Link Switch | UPS Output H-Bridge Stage |
Use Scenario: DC-side switching in string-level microinverters interfacing PV panels to 200–400 V DC link. IC Role / Device Role / Timing Role: High-voltage, medium-current switch operating in hard-switched or quasi-resonant topologies. Use Value: 40 A ID rating and 0.045 Ω RDS(on) sustain >800 W per device with <2 W conduction loss at full load. | Use Scenario: Full-bridge output stage in 1–3 kVA online UPS converting 380–400 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: Bidirectional power switch managing AC waveform synthesis with dead-time controlled gate timing. Use Value: Controlled Qgd/Qg ratio (16/35 nC) ensures clean zero-voltage switching transitions, minimizing shoot-through risk and EMI generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP150N15T | Higher RDS(on) (0.015 Ω), TO-220 package, no integrated body diode optimization | Requires external freewheeling diode; less suitable for synchronous rectification or high-di/dt inductive loads | Preferred where through-hole mounting and higher voltage margin (150 V) are prioritized over surface-mount density and body diode performance |
| STP110N15F7 | Lower Qg (29 nC), same RDS(on) (0.045 Ω), DPAK package with higher θJA | Limited thermal capability in high ambient environments due to larger θch–c (~2.5°C/W) | Better for cost-sensitive, lower-power (<500 W) applications where PCB space permits larger footprint and thermal relief is less constrained |
Compared with IXTP150N15T and STP110N15F7, the RJK1535DPE-LE delivers superior thermal resistance (1.25°C/W), optimized body diode recovery (110 ns trr), and LDPAK packaging for higher current density-making it preferred for compact, high-efficiency industrial power modules.
Availability
RJK1535DPE-LE is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, UPS output stages, and high-reliability DC-DC converters requiring stable component supply and long-term production continuity.
Supply support for RJK1535DPE-LE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.
The RJK1535DPE-LE belongs to Renesas' high-speed power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in industrial automation and renewable energy systems.
FAQ
What is the maximum continuous drain current rating for RJK1535DPE-LE?
The RJK1535DPE-LE has a maximum continuous drain current (ID) rating of 40 A at case temperature Tc = 25°C. This rating decreases with rising case temperature per the derating curve on page 3 of the datasheet, reaching ~20 A at Tc = 100°C. The device also supports 100 A peak pulsed current (ID(pulse)) for ≤10 μs at 1% duty cycle.
Does RJK1535DPE-LE have a specified avalanche energy rating?
Yes, the RJK1535DPE-LE is fully avalanche-rated with a single-pulse avalanche energy (EAR) of 67.5 mJ under test conditions of Tch = 25°C and Tch ≤ 150°C. This rating ensures safe operation during unclamped inductive switching events common in motor drive and relay control applications without requiring external protection components.
What is the gate-to-source threshold voltage range for RJK1535DPE-LE?
The gate-to-source cutoff voltage (VGS(off)) for RJK1535DPE-LE is specified from 3.0 V to 4.5 V at VDS = 10 V and ID = 1 mA. This defines its enhancement-mode behavior and confirms compatibility with standard 5 V logic-level gate drivers, though optimal RDS(on) performance requires VGS ≥ 10 V as confirmed by the 0.045 Ω typical value at that drive level.
Is RJK1535DPE-LE suitable for synchronous rectification applications?
Yes, the RJK1535DPE-LE is well-suited for synchronous rectification due to its low RDS(on) (0.045 Ω), fast switching characteristics (tr = 170 ns, tf = 80 ns), and optimized body diode with trr = 110 ns and Qrr = 0.5 μC. These parameters allow efficient replacement of Schottky diodes in secondary-side DC-DC converters operating up to 300 kHz, provided gate timing avoids shoot-through.
What package type does RJK1535DPE-LE use, and how does it differ from standard DPAK?
RJK1535DPE-LE uses the LDPAK(S)-(1) package (JEITA code PRSS0004AE-B), a surface-mount variant of the SC-83 outline with dual drain terminals and an exposed thermal pad. Unlike standard DPAK, LDPAK offers lower thermal resistance (θch–c = 1.25°C/W vs. ~2.5°C/W for DPAK) and reduced package inductance due to symmetrical drain routing-critical for high-frequency, high-current switching stability.
RJK1535DPE-LE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-83
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 52mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1420 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LDPAK
RJK1535DPE-LE FAQ
1.How can I place an order for RJK1535DPE-LE through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1535DPE-LE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1535DPE-LE reliable?
The price and inventory of RJK1535DPE-LE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1535DPE-LE is usually 5 days.
3.What payment methods are accepted for RJK1535DPE-LE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1535DPE-LE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1535DPE-LE?
RJK1535DPE-LE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1535DPE-LE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1535DPE-LE?
For technical support, including RJK1535DPE-LE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1535DPE-LE requirements.
6.How does Aetrix verify that RJK1535DPE-LE is sourced from the original manufacturer or authorized distributors?
All RJK1535DPE-LE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1535DPE-LE meets industry standards.
7.What is the process for return or replacement of RJK1535DPE-LE?
All RJK1535DPE-LE units undergo pre-shipment inspection (PSI). If there is an issue with RJK1535DPE-LE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1535DPE-LE part is unused and in its original packaging.
Return procedure for RJK1535DPE-LE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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