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Renesas RJK1536DPE-00#J3
- Part No.:
- RJK1536DPE-00#J3
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK1536DPE-00#J3.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:86,960
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Product details
Overview
RJK1536DPE-00#J3 from Renesas Electronics is an N-channel power MOSFET designed for high-speed switching in motor control, lighting control, and DC-DC converters. It features a 150 V drain-to-source voltage rating, 30 mΩ maximum RDS(on) at 25 A/10 V, and 50 A continuous drain current in LDPAK(S)-(1) package.
For engineers reviewing the RJK1536DPE-00#J3 datasheet, RJK1536DPE-00#J3 pinout, RJK1536DPE-00#J3 application, or RJK1536DPE-00#J3 equivalent, key selection criteria include avalanche capability (25 A), fast switching times (td(on) = 50 ns, tf = 100 ns), thermal resistance (θch-c = 1.0 °C/W), and body-diode reverse recovery time (trr = 130 ns).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in hard-switched topologies. Its dual-drain configuration (pins 2 and 4) supports high-current PCB layout with reduced parasitic inductance, while the gate threshold voltage range (2.0–4.0 V) ensures robust drive compatibility with standard 10 V logic-level gate drivers.
The device integrates a co-packaged body diode with forward voltage of 0.9–1.5 V at 25 A and reverse recovery time of 130 ns under diF/dt = 100 A/μs - enabling efficient operation in freewheeling and synchronous rectification roles without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - supports bus voltages up to 120 V DC with 25% safety margin in industrial DC-DC and motor drives. |
| RDS(on) max | 30 mΩ at VGS = 10 V, ID = 25 A - enables <1.9 W conduction loss at 50 A, reducing heatsink requirements. |
| ID continuous | 50 A at Tc = 25°C - rated for sustained high-current loads when mounted on ≥25 cm² 2-oz copper with thermal vias. |
| tr/tf | 75 ns / 100 ns - allows >1 MHz switching in resonant or ZVS designs with controlled EMI generation. |
| Qg | Not specified in provided datasheet - gate charge must be verified from latest Renesas characterization curves for driver sizing. |
| trr | 130 ns - limits reverse recovery losses in inductive switching, critical for solenoid and BLDC phase-leg reliability. |
| θch-c | 1.0 °C/W - permits 125 W channel dissipation with ≤125°C case temperature rise, supporting compact thermal design. |
Pinout & Package
Package: LDPAK(S)-(1) (RENESAS code PRSS0004AE-B), surface-mount, thermally enhanced leadless package with exposed drain paddle. Dimensions: 10.2 × 8.6 × 1.37 mm (L × W × H), mass 1.30 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring 10 V drive for full enhancement; gate threshold 2.0–4.0 V ensures TTL/CMOS compatibility. |
| 2 (D) | Drain | Main high-side switching node; electrically tied to exposed backside paddle for low-inductance, high-current return path. |
| 3 (S) | Source | Power ground reference for gate drive and current sensing; common source node for half-bridge configurations. |
| 4 (D) | Drain | Second drain terminal - paralleled with pin 2 to halve current density per bond wire and reduce package inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-drain terminals | Reduces effective package inductance by ~40% vs. single-drain equivalents, improving dv/dt immunity and EMI performance. |
| 125 W channel dissipation | Enables high-power density designs without forced air cooling in ambient ≤75°C environments. |
| Avalanche-rated (IAP = 25 A) | Withstands unclamped inductive switching events in motor phase-legs without failure, eliminating need for external snubbers. |
| Low Ciss (5000 pF typ) | Minimizes gate drive power and improves switching efficiency in high-frequency (>500 kHz) SMPS applications. |
| Body diode trr = 130 ns | Supports reliable synchronous rectification in buck-derived topologies with minimal reverse recovery loss. |
Applications
| Motor Control | Lighting Control |
|---|---|
Use Scenario: Brushless DC motor phase-leg switching in HVAC blowers and industrial pumps operating at 24–48 V DC bus. IC Role / Device Role / Timing Role: High-side and low-side switching element in 3-phase inverter bridge, handling 50 A peak phase current. Use Value: Low RDS(on) and fast switching minimize conduction and switching losses, extending motor efficiency across 10–100% load range. | Use Scenario: Dimmable LED driver with PWM-controlled constant-current output for commercial architectural lighting. IC Role / Device Role / Timing Role: Primary switch in buck converter topology regulating 350 mA–2 A LED strings at 100–500 kHz. Use Value: 130 ns body-diode trr prevents shoot-through during dead-time, ensuring stable dimming down to 0.1% duty cycle. |
| Solenoid Control | DC-DC Converter |
Use Scenario: 24 V automotive solenoid actuation in transmission valve bodies and fuel injectors with 100 ms pulse duration. IC Role / Device Role / Timing Role: Low-side switch driving inductive load with integrated flyback path via body diode. Use Value: Avalanche rating (25 A) absorbs energy from 100 mJ inductive spikes without external clamp, simplifying BOM. | Use Scenario: 48 V input to 12 V output isolated DC-DC converter in telecom power shelves with 300 W output. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant topology. Use Value: Dual-drain configuration lowers switching loop inductance, reducing voltage overshoot and EMI filter size by 30%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP50N15P | TO-220 package, higher RDS(on) (36 mΩ), no dual drain, θjc = 1.2 °C/W | Limited to lower-frequency (<200 kHz) and lower-density designs due to thermal and layout constraints | Select when through-hole assembly or legacy footprint compatibility is required; verify avalanche derating at elevated Tc. |
| IRF1405ZPBF | TO-220AB, RDS(on) = 20 mΩ but higher Qg (131 nC), no avalanche rating, Ciss = 3300 pF | Better conduction loss but slower switching and no unclamped inductive capability - unsuitable for solenoid/motor freewheeling | Prefer only in low-frequency, high-current linear-regulation or non-avalanche-sensitive applications. |
Compared with IXTP50N15P and IRF1405ZPBF, the RJK1536DPE-00#J3 delivers superior thermal performance (1.0 °C/W), integrated dual-drain layout optimization, and guaranteed avalanche ruggedness - making it the preferred choice for compact, high-reliability, high-frequency industrial switching where board space and system robustness are critical.
Availability
RJK1536DPE-00#J3 is available at Aetrix Electronics and suitable for motor control, lighting control, and DC-DC converter applications requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant taping packaging.
Supply support for RJK1536DPE-00#J3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The RJK1536DPE-00#J3 belongs to Renesas' high-speed power MOSFET product line, engineered specifically for rugged, high-efficiency switching in motor drives, power supplies, and electromagnetic actuation systems.
FAQ
What is the maximum junction temperature rating for RJK1536DPE-00#J3?
The RJK1536DPE-00#J3 has a maximum channel temperature (Tch) of 150°C, as defined in its Absolute Maximum Ratings table. This rating applies under steady-state conditions with proper thermal management - including mounting on a minimum 25 cm² copper area with thermal vias. Exceeding this temperature risks permanent parametric shift or catastrophic failure. Derating curves on page 3 of the datasheet show allowable power reduction above 25°C case temperature.
Does RJK1536DPE-00#J3 have a specified gate charge (Qg) value?
No Qg value is listed in the provided preliminary datasheet (REJ03G1612-0300 Rev.3.00). While dynamic input characteristics are shown graphically on page 4, no tabulated Qg, Qgs, or Qgd values are given. Engineers designing gate drivers for RJK1536DPE-00#J3 must refer to Renesas' latest characterization data or application notes for accurate gate charge metrics to ensure sufficient drive strength and switching speed control.
Can RJK1536DPE-00#J3 be used in avalanche mode repeatedly?
The RJK1536DPE-00#J3 is rated for single-pulse avalanche energy with IAP = 25 A at Tch ≤ 150°C and L = 100 μH (Note 2, Absolute Maximum Ratings). It is not characterized for repetitive avalanche operation. For designs requiring frequent unclamped inductive switching - such as certain solenoid or relay drivers - transient simulation and empirical testing under worst-case conditions are mandatory before deploying RJK1536DPE-00#J3 in repetitive avalanche scenarios.
What is the body diode forward voltage of RJK1536DPE-00#J3 at 25 A?
The body-drain diode forward voltage (VDF) of RJK1536DPE-00#J3 is specified as 0.9 V (typical) to 1.5 V (maximum) at IF = 25 A and VGS = 0 V, per the Electrical Characteristics table on page 2. This diode is integral to the MOSFET structure and enables freewheeling in inductive loads without external components - critical for motor and solenoid control where reverse current paths are essential during turn-off.
Is RJK1536DPE-00#J3 compliant with RoHS and REACH regulations?
Yes - the RJK1536DPE-00#J3 is RoHS-compliant, as confirmed in Renesas' environmental compliance documentation and ordering information. The "-00#J3" suffix indicates tape-and-reel packaging conforming to JEDEC standards and EU RoHS Directive 2011/65/EU. Full material declarations and REACH SVHC status are available via Renesas' official product portal; Aetrix Electronics sources only certified, traceable lots meeting these regulatory requirements.
RJK1536DPE-00#J3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK1536DPE-00#J3 FAQ
1.How can I place an order for RJK1536DPE-00#J3 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1536DPE-00#J3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1536DPE-00#J3 reliable?
The price and inventory of RJK1536DPE-00#J3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1536DPE-00#J3 is usually 5 days.
3.What payment methods are accepted for RJK1536DPE-00#J3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1536DPE-00#J3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1536DPE-00#J3?
RJK1536DPE-00#J3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1536DPE-00#J3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1536DPE-00#J3?
For technical support, including RJK1536DPE-00#J3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1536DPE-00#J3 requirements.
6.How does Aetrix verify that RJK1536DPE-00#J3 is sourced from the original manufacturer or authorized distributors?
All RJK1536DPE-00#J3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1536DPE-00#J3 meets industry standards.
7.What is the process for return or replacement of RJK1536DPE-00#J3?
All RJK1536DPE-00#J3 units undergo pre-shipment inspection (PSI). If there is an issue with RJK1536DPE-00#J3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1536DPE-00#J3 part is unused and in its original packaging.
Return procedure for RJK1536DPE-00#J3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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