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Renesas RJK1555DPA-00#J0
- Part No.:
- RJK1555DPA-00#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
RJK1555DPA-00#J0.pdf
- Description:
- MOSFET N-CH 150V 25A 8WPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,035
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Product details
Overview
RJK1555DPA-00#J0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drivers, and load switch applications. It delivers 25 A continuous drain current at 25°C, features 0.038 Ω typical RDS(on) at VGS = 10 V, supports 150 V VDSS, and uses the WPAK (PWSN0008DA-A) surface-mount package with integrated source-side thermal pad.
For engineers reviewing the RJK1555DPA-00#J0 datasheet, RJK1555DPA-00#J0 pinout, RJK1555DPA-00#J0 application, or RJK1555DPA-00#J0 equivalent, key selection criteria include its low gate charge (38 nC), fast switching times (td(on) = 32 ns, tf = 46 ns), body-diode reverse recovery time (120 ns), and suitability for high-density, thermally constrained PCB layouts.
Technical Context
This MOSFET employs a trench-gate vertical structure optimized for low conduction loss and fast switching. Its gate threshold voltage range (2.5–4.5 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drive, while the 30 W channel dissipation rating and 4.17 °C/W channel-to-case thermal impedance support operation under sustained high-current loads when mounted on adequately sized copper areas.
The device integrates a robust body diode with 0.95 V typical forward voltage at 25 A and 120 ns reverse recovery time-critical for synchronous rectification and freewheeling paths in buck converters and H-bridge motor control. Its 2400 pF input capacitance and 69 pF reverse transfer capacitance enable predictable gate drive design with minimal Miller-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Maximum blocking voltage for use in 48 V industrial bus or 100 V flyback primary-side switching |
| RDS(on) (typ) | 0.038 Ω @ VGS = 10 V - Enables ≤9.5 W conduction loss at 25 A, reducing heatsink requirements |
| Qg | 38 nC - Determines gate driver current demand; enables efficient 500 kHz+ PWM operation with <1.5 W gate drive loss |
| tr/tf | 80 ns / 46 ns - Supports fast edge rates to minimize switching transition losses in hard-switched topologies |
| VGS(th) | 2.5–4.5 V - Compatible with 3.3 V and 5 V microcontroller GPIO or dedicated gate drivers without level-shifting |
| trr | 120 ns - Limits reverse recovery charge (Qrr ≈ 3 µC), critical for minimizing cross-conduction loss in synchronous rectifiers |
| θch-c | 4.17 °C/W - Defines thermal path efficiency from junction to case; requires direct thermal pad soldering to PCB copper pour |
Pinout & Package
Package: WPAK (RENESAS code PWSN0008DA-A), 8-pin surface-mount with exposed thermal pad (pin 1–3: Source; pin 4: Gate; pins 5–8: Drain). Dimensions: 5.9 mm × 4.21 mm × 1.27 mm, mass 0.075 g, Ni/Pd/Au plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; electrically tied to thermal pad; must be connected to large PCB copper area for heat dissipation |
| 4 | Gate | Control terminal requiring low-impedance drive; sensitive to ESD; layout must minimize trace inductance to suppress ringing |
| 5, 6, 7, 8 | Drain | Main high-side switching node; connects to input bus or inductive load; all four pins paralleled for current sharing and reduced resistance |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.038 Ω typ reduces I²R conduction loss by >30% vs. comparable 150 V MOSFETs, enabling higher efficiency at 25 A loads |
| Low Qg & Qgd | 38 nC total gate charge and 10.2 nC gate-drain charge minimize switching energy and improve controllability in high-frequency SMPS |
| Fast body diode | 120 ns trr and 0.95 V VDF reduce freewheeling loss and EMI in non-synchronous converters and half-bridge configurations |
| WPAK thermal design | Exposed source pad and 4.17 °C/W θch-c allow 30 W power dissipation with only 125 °C temperature rise above case |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12–48 V input to 3.3/5/12 V output conversion in telecom power supplies and industrial PLCs. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz PWM frequency. Use Value: Low RDS(on) and fast switching minimize both conduction and transition losses, achieving >94% peak efficiency at 20 A output. | Use Scenario: Full-bridge H-bridge driving 24 V, 15–25 A brushed motors in automated machinery and robotics. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current during PWM-controlled direction reversal. Use Value: Robust avalanche rating (22 A, 36.3 mJ) withstands inductive kickback during rapid current reversal without snubbers. |
| Hot-Swap Controller | LED Constant-Current Driver |
Use Scenario: Inrush current limiting and fault protection for 48 V backplane modules in data center rack systems. IC Role / Device Role / Timing Role: Load switch placed between input bus and downstream circuitry, controlled via external current-sense amplifier and comparator. Use Value: Low drive current requirement and ±30 V VGS rating simplify gate biasing and ensure stable operation during transient overvoltage events. | Use Scenario: High-brightness LED string driver for architectural lighting and signage with 36–72 V input and 1–3 A constant current. IC Role / Device Role / Timing Role: PWM-modulated series pass element regulating average LED current in linear + switching hybrid topology. Use Value: Tight VGS(th) distribution (2.5–4.5 V) ensures consistent turn-on across production units, improving current matching in multi-channel designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP150N15T | Higher RDS(on) (0.015 Ω min, but 0.022 Ω typ at 10 V), TO-220 package, no integrated thermal pad | Requires external heatsink; unsuitable for ultra-thin or high-density layouts where WPAK footprint is mandatory | Select if board-level thermal management allows discrete heatsinking and lower RDS(on) outweighs packaging constraints |
| IRF1405ZPBF | Same VDSS (150 V), higher RDS(on) (0.0033 Ω min, 0.0042 Ω typ), TO-220AB package, higher Qg (133 nC) | Slower switching due to higher gate charge; less suitable for >200 kHz operation without oversized gate drivers | Select only for cost-sensitive, low-frequency (<100 kHz), high-current linear-regulation applications where thermal mass compensates for inefficiency |
Compared with IXTP150N15T and IRF1405ZPBF, the RJK1555DPA-00#J0 offers superior power density and gate-drive efficiency in space-constrained, high-frequency switching applications-but requires careful PCB thermal design due to its surface-mount WPAK package and lack of mechanical heatsink interface.
Availability
RJK1555DPA-00#J0 is available at Aetrix Electronics and suitable for DC-DC converter design, motor control implementation, and hot-swap load switching requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for RJK1555DPA-00#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal solutions.
The RJK1555DPA-00#J0 belongs to Renesas' high-speed power MOSFET product line, engineered for industrial-grade switching applications demanding low loss, fast transitions, and robust avalanche performance in compact surface-mount formats.
FAQ
What is the maximum continuous drain current rating for RJK1555DPA-00#J0?
The RJK1555DPA-00#J0 has a maximum continuous drain current (ID) rating of 25 A at Tc = 25°C. This rating assumes proper PCB thermal design with the exposed source pad soldered to ≥10 cm² of 2 oz copper. At elevated case temperatures, derating applies per the Safe Operating Area curve in the datasheet-e.g., ~18 A at Tc = 100°C. The RJK1555DPA-00#J0 must not exceed its 150 V VDSS or 30 W channel dissipation limits under any operating condition.
Does RJK1555DPA-00#J0 support logic-level gate drive?
Yes, the RJK1555DPA-00#J0 supports logic-level gate drive with a gate threshold voltage (VGS(off)) range of 2.5–4.5 V, ensuring full enhancement at 5 V VGS. Its 0.038 Ω typical RDS(on) is specified at VGS = 10 V, but it achieves usable on-resistance (≤0.065 Ω) even at 4.5 V, making it compatible with 3.3 V and 5 V microcontroller outputs when paired with appropriate gate resistors. The RJK1555DPA-00#J0 does not require external level-shifting circuitry for standard logic interfaces.
What is the thermal resistance from channel to case (θch-c) for RJK1555DPA-00#J0?
The RJK1555DPA-00#J0 has a channel-to-case thermal resistance (θch-c) of 4.17 °C/W, measured under JEDEC JESD51-14 conditions with the source pad fully soldered to a 10 cm² copper area. This value reflects the dominant thermal path through the exposed source pad into the PCB. To achieve this rating, the RJK1555DPA-00#J0 must be mounted using recommended reflow profile and solder paste volume; inadequate thermal pad soldering increases effective θch-c significantly.
Can RJK1555DPA-00#J0 be used in avalanche mode?
Yes, the RJK1555DPA-00#J0 is rated for repetitive avalanche operation with IAP = 22 A and EAR = 36.3 mJ at Tch ≤ 150°C and single-pulse conditions. This capability enables ruggedness against inductive switching transients in motor drives and relay drivers without external snubbers. However, avalanche energy must be calculated per pulse and averaged over time to avoid exceeding the RJK1555DPA-00#J0's channel dissipation limit of 30 W. Operation beyond datasheet avalanche ratings voids reliability guarantees.
What is the gate-to-source voltage limit for RJK1555DPA-00#J0?
The RJK1555DPA-00#J0 has a maximum gate-to-source voltage (VGS) rating of ±30 V, meaning it can tolerate up to +30 V for turn-on and –30 V for active gate pull-down or negative biasing. Exceeding this limit risks permanent gate oxide damage. During switching, transient overshoot must be clamped-especially in high-dV/dt environments-using gate resistors and optional Zener diodes. The RJK1555DPA-00#J0's ±1 µA IGSS leakage at ±30 V confirms robust gate insulation integrity within this range.
RJK1555DPA-00#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WPAK (3)
RJK1555DPA-00#J0 FAQ
1.How can I place an order for RJK1555DPA-00#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1555DPA-00#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1555DPA-00#J0 reliable?
The price and inventory of RJK1555DPA-00#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1555DPA-00#J0 is usually 5 days.
3.What payment methods are accepted for RJK1555DPA-00#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1555DPA-00#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1555DPA-00#J0?
RJK1555DPA-00#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1555DPA-00#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1555DPA-00#J0?
For technical support, including RJK1555DPA-00#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1555DPA-00#J0 requirements.
6.How does Aetrix verify that RJK1555DPA-00#J0 is sourced from the original manufacturer or authorized distributors?
All RJK1555DPA-00#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1555DPA-00#J0 meets industry standards.
7.What is the process for return or replacement of RJK1555DPA-00#J0?
All RJK1555DPA-00#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK1555DPA-00#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1555DPA-00#J0 part is unused and in its original packaging.
Return procedure for RJK1555DPA-00#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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