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Renesas RJK1557DPA-00#J0
- Part No.:
- RJK1557DPA-00#J0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
RJK1557DPA-00#J0.pdf
- Description:
- MOSFET N-CH 150V 25A 8WPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,595
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Product details
Overview
RJK1557DPA-00#J0 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drive circuits, featuring 150 V VDSS, 25 A continuous drain current, and 0.046 Ω typical RDS(on) at VGS = 10 V - enabling efficient 12–48 V industrial power stages.
For engineers reviewing the RJK1557DPA-00#J0 datasheet, RJK1557DPA-00#J0 pinout, RJK1557DPA-00#J0 application, or RJK1557DPA-00#J0 equivalent, key selection criteria include its WPAK package thermal performance (θch-c = 4.17 °C/W), fast switching (td(off) = 37 ns), and integrated body diode with trr = 130 ns for synchronous rectification and flyback recovery.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance and reduced gate charge (Qg = 20 nC), supporting high-frequency PWM operation up to 500 kHz in buck and half-bridge topologies. Its avalanche-rated construction (IAP = 22 A, EAR = 36.3 mJ) enables robustness against inductive load transients without external snubbers.
The device operates with gate threshold voltage VGS(off) between 2.5 V and 4.5 V, ensuring reliable turn-on with standard 5 V or 10 V logic-level drivers. Its Ciss = 1250 pF and Crss = 32 pF support predictable gate drive design while minimizing Miller-induced shoot-through risk in bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - supports 48 V bus systems with 3× safety margin against voltage spikes in industrial motor drives. |
| RDS(on) (typ) | 0.046 Ω @ VGS = 10 V - delivers ≤14.4 W conduction loss at 25 A, reducing heatsink requirements. |
| Qg | 20 nC - enables efficient gate driving with <100 mW driver power at 200 kHz switching frequency. |
| td(off) | 37 ns - allows precise dead-time control in half-bridge inverters to prevent cross-conduction. |
| θch-c | 4.17 °C/W - permits 30 W channel dissipation at ΔT = 125 °C, supporting compact PCB layouts without forced air. |
| trr | 130 ns - ensures clean body-diode commutation in synchronous rectifiers and flyback converters. |
| Pch | 30 W @ Tc = 25 °C - defines maximum steady-state power handling under case-cooled conditions. |
Pinout & Package
Package: WPAK (RENESAS code PWSN0008DA-A), surface-mount, thermally enhanced leadframe with exposed drain pad. Dimensions: 5.9 mm × 4.9 mm × 1.27 mm (L × W × H), mass 0.075 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel FET cells; low-inductance return path for high di/dt currents. |
| 4 | Gate | Control terminal requiring ≤±30 V rating; driven via 10 Ω series resistor per switching time test circuit. |
| 5, 6, 7, 8 | Drain | High-current output node tied to exposed die-pad; primary thermal path to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.046 Ω typ reduces I²R losses by >35% vs. comparable 150 V MOSFETs, improving efficiency in 24 V/20 A power supplies. |
| Fast switching | 37 ns td(off) + 39 ns tf enables >300 kHz operation with minimal switching loss in LLC resonant converters. |
| Avalanche ruggedness | Rated for 22 A single-pulse avalanche current and 36.3 mJ energy - eliminates need for external clamping in inductive load switching. |
| Integrated body diode | 130 ns reverse recovery time and 0.93 V forward drop support bidirectional current flow in H-bridge motor control without discrete diodes. |
| Thermally optimized WPAK | 4.17 °C/W channel-to-case impedance allows direct mounting to 2 oz copper thermal pads, cutting junction temperature rise by ~20 °C vs. SO-8. |
Applications
| Industrial DC-DC Converters | Brushless DC Motor Drives |
|---|---|
|
Use Scenario: 48 V input to 12 V/30 A isolated buck converter in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous rectified topology, operating at 250 kHz with 50 ns dead time. Use Value: 0.046 Ω RDS(on) limits conduction loss to 1.15 W, enabling natural convection cooling and extending MTBF beyond 100,000 hours. |
Use Scenario: Half-bridge leg in 24 V, 1.5 kW BLDC inverter for automated guided vehicle (AGV) traction control. IC Role / Device Role / Timing Role: Low-side switching element with body diode conducting freewheeling current during PWM off-time. Use Value: 130 ns trr minimizes diode reverse recovery loss, reducing total system switching loss by 18% compared to standard 150 V MOSFETs. |
| Telecom Power Supplies | UPS Inverter Stages |
|
Use Scenario: OR-ing FET in redundant 54 V telecom rectifier modules meeting NEBS Level 3 shock/vibration requirements. IC Role / Device Role / Timing Role: Forward-biased power switch controlling current direction between parallel rectifiers during fault isolation. Use Value: ±30 V VGSS rating withstands gate transient coupling during hot-swap events, preventing unintended turn-on. |
Use Scenario: Output stage switch in 120 VAC online UPS inverter using full-bridge topology with transformer isolation. IC Role / Device Role / Timing Role: High-voltage switching device handling 150 V DC link with repetitive avalanche stress during short-circuit protection. Use Value: 36.3 mJ EAR rating sustains 100+ avalanche events at rated current, eliminating need for crowbar circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP150N15T | Higher RDS(on) (0.015 Ω min, but 0.022 Ω typ at 10 V), TO-220 package, no integrated diode rating specified. | Requires external Schottky diode for freewheeling; unsuitable for space-constrained PCBs due to through-hole footprint. | Select when higher peak current (150 A) is needed and thermal interface allows TO-220 mounting. |
| STP16NF15 | Lower VDSS (150 V same), but higher RDS(on) (0.12 Ω typ), DPAK package, Qg = 25 nC. | Slower switching (td(off) = 80 ns) limits usable frequency to <100 kHz; higher conduction loss increases heatsink size. | Select only for cost-sensitive, low-frequency (<50 kHz) applications where thermal budget permits larger heatsinks. |
Compared with IXTP150N15T and STP16NF15, RJK1557DPA-00#J0 delivers superior thermal performance (4.17 °C/W vs. >60 °C/W for TO-220/DPAK), lower gate charge for high-frequency efficiency, and guaranteed avalanche energy - making it optimal for compact, high-reliability industrial power stages.
Availability
RJK1557DPA-00#J0 is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for RJK1557DPA-00#J0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK1557DPA-00#J0 belongs to Renesas' high-speed power MOSFET product line, engineered for efficiency-critical industrial power conversion where low RDS(on), fast switching, and avalanche ruggedness are mandatory.
FAQ
What is the maximum continuous drain current rating for RJK1557DPA-00#J0?
The RJK1557DPA-00#J0 has a continuous drain current (ID) rating of 25 A at Tc = 25 °C. This rating assumes proper PCB thermal management using the WPAK package's exposed drain pad. At elevated case temperatures, derating applies per the datasheet's RDS(on) vs. temperature curve - e.g., ID drops to ~18 A at Tc = 100 °C. The RJK1557DPA-00#J0 must not exceed its 30 W channel dissipation limit under any operating condition.
Does RJK1557DPA-00#J0 support logic-level gate drive?
RJK1557DPA-00#J0 is not a logic-level MOSFET; its gate threshold voltage VGS(off) ranges from 2.5 V to 4.5 V, and it achieves specified RDS(on) only at VGS = 10 V. Driving it with 3.3 V or 5 V logic alone results in incomplete enhancement and excessive conduction loss. The RJK1557DPA-00#J0 requires a dedicated gate driver capable of delivering ≥10 V with ≥1 A peak current to ensure fast, low-loss switching.
What is the thermal resistance from channel to case (θch-c) for RJK1557DPA-00#J0?
The RJK1557DPA-00#J0 has a channel-to-case thermal resistance (θch-c) of 4.17 °C/W, measured under JEDEC-standard conditions with the drain pad soldered to a 1-inch² 2 oz copper area. This value enables accurate junction temperature estimation: Tj = Tc + (Ploss × 4.17). The RJK1557DPA-00#J0's low θch-c is a key advantage over DPAK or TO-220 alternatives, directly supporting compact thermal design.
Can RJK1557DPA-00#J0 be used in avalanche mode repeatedly?
Yes - the RJK1557DPA-00#J0 is fully rated for repetitive avalanche operation, with specified single-pulse avalanche current (IAP = 22 A) and energy (EAR = 36.3 mJ) at Tch ≤ 150 °C. Its trench-gate structure ensures consistent avalanche behavior across its operational lifetime. However, RJK1557DPA-00#J0 avalanche use must remain within the Safe Operating Area (SOA) limits shown in the datasheet, and cumulative energy must be managed to avoid thermal runaway.
What is the gate charge (Qg) specification for RJK1557DPA-00#J0?
The RJK1557DPA-00#J0 has a total gate charge (Qg) of 20 nC, measured at VDD = 120 V, VGS = 10 V, and ID = 25 A. This low Qg value reduces gate driver power consumption and switching transition time - critical for high-frequency (>200 kHz) power converters. The RJK1557DPA-00#J0 also specifies Qgs = 6 nC and Qgd = 5 nC, enabling precise Miller-effect analysis in bridge configurations.
RJK1557DPA-00#J0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WPAK (3)
RJK1557DPA-00#J0 FAQ
1.How can I place an order for RJK1557DPA-00#J0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1557DPA-00#J0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1557DPA-00#J0 reliable?
The price and inventory of RJK1557DPA-00#J0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1557DPA-00#J0 is usually 5 days.
3.What payment methods are accepted for RJK1557DPA-00#J0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1557DPA-00#J0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1557DPA-00#J0?
RJK1557DPA-00#J0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1557DPA-00#J0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1557DPA-00#J0?
For technical support, including RJK1557DPA-00#J0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1557DPA-00#J0 requirements.
6.How does Aetrix verify that RJK1557DPA-00#J0 is sourced from the original manufacturer or authorized distributors?
All RJK1557DPA-00#J0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1557DPA-00#J0 meets industry standards.
7.What is the process for return or replacement of RJK1557DPA-00#J0?
All RJK1557DPA-00#J0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK1557DPA-00#J0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1557DPA-00#J0 part is unused and in its original packaging.
Return procedure for RJK1557DPA-00#J0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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