My Inquiry
My Account
Renesas RJK1575DPA-00#J5A
- Part No.:
- RJK1575DPA-00#J5A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
RJK1575DPA-00#J5A.pdf
- Description:
- MOSFET N-CH 150V 25A WPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,553
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
RJK1575DPA-00#J5A from Renesas Electronics is a 150 V, 25 A N-channel power MOSFET in WPAK(3F) package, optimized for high-speed switching in DC-DC converters and motor drives. It delivers RDS(on) = 0.038 Ω (typ.) at VGS = 10 V, Qg = 37 nC (typ.), and tf = 31 ns, enabling efficient high-frequency operation in industrial power supplies.
For engineers reviewing the RJK1575DPA-00#J5A datasheet, RJK1575DPA-00#J5A pinout, RJK1575DPA-00#J5A application, or RJK1575DPA-00#J5A equivalent, key selection criteria include its 150 V VDSS, low thermal impedance (θch-c = 1.93 °C/W), body-diode trr = 88 ns, and WPAK(3F) surface-mount footprint with 4-source/4-drain terminal configuration.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(on) and fast switching with minimal gate charge. Its design supports hard-switched topologies up to 200 kHz, leveraging low Ciss = 2200 pF and Crss = 89 pF to reduce Miller-induced turn-on risk.
The integrated body diode features VDF = 0.81 V (typ.) at IF = 25 A and trr = 88 ns under di/dt = 100 A/μs, making it suitable for synchronous rectification and freewheeling paths where reverse recovery performance impacts efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Withstands DC bus voltages up to 150 V in boost PFC or half-bridge configurations without avalanche stress. |
| RDS(on) | 0.038 Ω typ. - Enables ≤12 W conduction loss at 25 A continuous drain current in thermally managed designs. |
| Qg | 37 nC typ. - Reduces gate drive power requirement and allows use of smaller gate drivers in high-frequency SMPS. |
| tf | 31 ns - Limits switching transition time to minimize overlap losses during hard switching at ≥100 kHz. |
| θch-c | 1.93 °C/W - Supports 65 W channel dissipation with ≤125 °C case temperature rise, enabling compact heatsink integration. |
| trr | 88 ns - Minimizes reverse recovery charge (Qrr) in freewheeling applications, reducing diode-induced voltage spikes. |
| VGS(off) | 2.5–4.5 V - Ensures reliable turn-off margin against noise in noisy industrial environments with ±30 V gate rating. |
Pinout & Package
Package: WPAK(3F), 8-pin surface-mount (RENESAS code PWSN0008DE-A), featuring exposed drain pad for thermal enhancement and dual-side source/drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Parallel-connected source terminals reduce bond-wire inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate | Single low-inductance gate input compatible with standard 10 Ω gate resistors for controlled turn-on/turn-off. |
| 5, 6, 7, 8 | Drain | Four drain terminals connected to common die-pad, enabling high-current routing and low thermal resistance to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.038 Ω typ. at 12.5 A/10 V enables <1.2 W conduction loss in 24 V/20 A DC-DC output stages. |
| Low gate charge | 37 nC total charge reduces gate driver IC power consumption and simplifies isolated gate drive design. |
| Fast body diode recovery | 88 ns trr minimizes voltage overshoot during inductive turn-off, reducing snubber component count. |
| High avalanche energy rating | 36.3 mJ single-pulse avalanche capability supports robustness against transient overvoltage events in motor control. |
| Thermally enhanced package | WPAK(3F) construction with θch-c = 1.93 °C/W allows direct mounting to 2 oz copper thermal pads without external heatsinks. |
Applications
| Industrial Motor Drives | Server Power Supplies |
|---|---|
Use Scenario: Half-bridge inverter stage for 48 V BLDC motor control in factory automation systems. IC Role / Device Role / Timing Role: High-side/low-side switching element handling 25 A peak phase current with 100 kHz PWM. Use Value: Low RDS(on) and fast tf/tr reduce conduction and switching losses, improving inverter efficiency by ≥1.8% at full load. | Use Scenario: Primary-side switch in 48 V input, 12 V output LLC resonant converter for AI server VRMs. IC Role / Device Role / Timing Role: High-frequency power switch operating at 300–500 kHz with zero-voltage switching assist. Use Value: Low Crss (89 pF) and Qgd/Qgs ratio of 1.08 enable clean ZVS transition, reducing EMI and gate drive losses. |
| Solar Microinverters | EV Onboard Chargers |
Use Scenario: DC-DC boost stage converting PV panel output (30–60 V) to 400 V DC link in residential microinverter. IC Role / Device Role / Timing Role: Synchronous rectifier and main switch in interleaved boost topology. Use Value: Body diode trr = 88 ns and VDF = 0.81 V lower reverse recovery loss by 35% vs. standard MOSFETs, increasing conversion efficiency at partial load. | Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 14 V auxiliary supply. IC Role / Device Role / Timing Role: Active clamp flyback primary switch handling 150 V blocking and 25 A peak current. Use Value: 150 V VDSS and 22 A avalanche current rating ensure safe clamping during transformer leakage energy discharge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP150N15T | Higher RDS(on) = 0.045 Ω, TO-220 package, no integrated thermal pad | Limited to lower-frequency (<50 kHz) applications due to higher switching losses and poorer thermal coupling | Select when through-hole assembly or legacy board layout requires TO-220 footprint and thermal derating is acceptable. |
| STP150N15F7 | Similar RDS(on) = 0.039 Ω but higher Qg = 48 nC and slower tf = 45 ns | Less suitable for >200 kHz operation due to increased gate drive demand and longer fall time | Prefer when cost sensitivity outweighs high-frequency efficiency needs and existing STMicro design reuse is prioritized. |
Compared with IXTP150N15T and STP150N15F7, the RJK1575DPA-00#J5A provides superior high-frequency efficiency via lower Qg and faster switching, while its WPAK(3F) package enables better thermal management than TO-220 alternatives-critical for compact, high-power-density industrial and automotive power stages.
Availability
RJK1575DPA-00#J5A is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and solar microinverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for RJK1575DPA-00#J5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK1575DPA-00#J5A belongs to Renesas' high-voltage power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control applications.
FAQ
What is the maximum continuous drain current rating for RJK1575DPA-00#J5A?
The RJK1575DPA-00#J5A has a rated continuous drain current (ID) of 25 A at Tc = 25 °C, limited by its maximum safe operating area. At elevated case temperatures, derating applies per the SOA curve on page 3 of the datasheet; for example, at Tc = 100 °C, the usable ID drops to approximately 14 A. The device also supports 50 A pulsed current (ID(pulse)) for ≤10 μs with 1% duty cycle.
Does RJK1575DPA-00#J5A have an integrated body diode, and what are its key characteristics?
Yes, the RJK1575DPA-00#J5A includes a built-in body diode with forward voltage VDF = 0.81 V (typ.) at IF = 25 A and reverse recovery time trr = 88 ns under di/dt = 100 A/μs. This diode is rated for 25 A continuous reverse current (IDR) and supports freewheeling and synchronous rectification functions without external diodes in many topologies.
What is the gate-to-source voltage range specified for RJK1575DPA-00#J5A?
The RJK1575DPA-00#J5A specifies a gate-to-source voltage range (VGS) of ±30 V, meaning it can safely withstand −30 V to +30 V between gate and source terminals. The gate threshold voltage VGS(off) is 2.5–4.5 V, ensuring robust turn-off behavior even with moderate gate noise, and full enhancement occurs at VGS ≥ 10 V for minimum RDS(on).
How does the WPAK(3F) package of RJK1575DPA-00#J5A improve thermal performance compared to standard SO-8?
The WPAK(3F) package used by RJK1575DPA-00#J5A features an exposed drain pad and optimized internal leadframe geometry, achieving θch-c = 1.93 °C/W-nearly 3× better than typical SO-8 packages (~5–6 °C/W). This allows the RJK1575DPA-00#J5A to dissipate 65 W at Tc = 25 °C, supporting higher power density without external heatsinks in PCB-mounted applications.
Is RJK1575DPA-00#J5A suitable for automotive applications?
The RJK1575DPA-00#J5A is classified as a "Standard" quality grade device per Renesas documentation and is intended for industrial applications such as motor drives and power supplies-not for safety-critical automotive systems like ADAS or powertrain control. Its datasheet does not specify AEC-Q101 qualification, and Renesas explicitly excludes use in transportation equipment unless designated "High Quality" grade.
RJK1575DPA-00#J5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- WPAK(3F) (5x6)
RJK1575DPA-00#J5A FAQ
1.How can I place an order for RJK1575DPA-00#J5A through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK1575DPA-00#J5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK1575DPA-00#J5A reliable?
The price and inventory of RJK1575DPA-00#J5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK1575DPA-00#J5A is usually 5 days.
3.What payment methods are accepted for RJK1575DPA-00#J5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK1575DPA-00#J5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK1575DPA-00#J5A?
RJK1575DPA-00#J5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK1575DPA-00#J5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK1575DPA-00#J5A?
For technical support, including RJK1575DPA-00#J5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK1575DPA-00#J5A requirements.
6.How does Aetrix verify that RJK1575DPA-00#J5A is sourced from the original manufacturer or authorized distributors?
All RJK1575DPA-00#J5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK1575DPA-00#J5A meets industry standards.
7.What is the process for return or replacement of RJK1575DPA-00#J5A?
All RJK1575DPA-00#J5A units undergo pre-shipment inspection (PSI). If there is an issue with RJK1575DPA-00#J5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK1575DPA-00#J5A part is unused and in its original packaging.
Return procedure for RJK1575DPA-00#J5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RJK1575DPA-00#J5A Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
