My Inquiry
My Account
Renesas RJK2017DPE-00#J3
- Part No.:
- RJK2017DPE-00#J3
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK2017DPE-00#J3.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:23,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
RJK2017DPE-00#J3 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and industrial power supplies. It delivers 200 V VDSS, 45 A continuous drain current (ID), and ultra-low 0.036 Ω typical RDS(on) at VGS = 10 V and Ta = 25 °C, enabling high-efficiency operation in compact thermal designs.
For engineers reviewing the RJK2017DPE-00#J3 datasheet, RJK2017DPE-00#J3 pinout, RJK2017DPE-00#J3 application, or RJK2017DPE-00#J3 equivalent, key selection criteria include its LDPAK(S)-(1) package thermal performance (θch–c = 1.25 °C/W), fast switching times (td(on) = 50 ns, tf = 40 ns), and body diode recovery characteristics (trr = 150 ns) for synchronous rectification and hard-switched topologies.
Technical Context
This MOSFET employs a trench-gate process optimized for low conduction loss and controlled gate charge (Qg = 66 nC, Qgd = 16 nC), supporting high-frequency PWM operation up to several hundred kHz. Its avalanche-rated design (IAP = 12 A, EAR = 9.6 mJ) enables robustness against inductive load transients without external snubbers.
The device integrates a low-VF body diode (VDF = 0.88 V typ. at IF = 45 A) with tightly specified reverse recovery time (trr = 150 ns) and di/dt immunity (100 A/μs), making it suitable for freewheeling and bidirectional current paths in half-bridge and full-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - Withstands up to 200 V drain-source blocking voltage, suitable for 100–160 V bus applications with margin. |
| RDS(on) typ. | 0.036 Ω at ID = 22.5 A, VGS = 10 V - Enables <1 W conduction loss at 20 A, reducing heatsink requirements. |
| ID continuous | 45 A at Tc = 25 °C - Supports high-current output stages in industrial SMPS and motor gate drivers. |
| Qg | 66 nC - Low total gate charge minimizes drive power and enables efficient 300–500 kHz switching with standard gate drivers. |
| trr | 150 ns - Predictable body diode recovery supports synchronous rectification and reduces EMI in flyback/LLC topologies. |
| θch–c | 1.25 °C/W - High thermal conductivity from channel to case allows 100 W dissipation with modest heatsinking (ΔT = 125 °C). |
| VGS(off) | 2–4 V - Ensures reliable turn-off with standard 5 V logic-level gate drive and noise immunity above 1 V. |
Pinout & Package
Package: LDPAK(S)-(1) (RENESAS code PRSS0004AE-B), surface-mount, thermally enhanced 4-pin leadless package with dual-drain configuration for low-inductance, high-current PCB layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting 10 V nominal drive; requires ≤10 Ω series resistance to damp ringing during fast transitions. |
| 2 (D) | Drain 1 | Main high-side current path; electrically tied to Pin 4; connects directly to high-voltage bus or transformer primary. |
| 3 (S) | Source | Power return and reference node for gate drive; must be low-impedance to minimize VGS error during high di/dt events. |
| 4 (D) | Drain 2 | Second drain terminal paralleled internally with Pin 2; used for symmetric current sharing and reduced package inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.036 Ω typ. reduces conduction loss by >30% vs. comparable 200 V MOSFETs, improving efficiency in 12–48 V input systems. |
| Avalanche ruggedness | Rated for 12 A single-pulse avalanche current and 9.6 mJ energy, eliminating need for external clamping in inductive switching circuits. |
| Fast switching | 50 ns turn-on delay and 40 ns fall time enable clean edge control in high-frequency SMPS, minimizing overlap loss. |
| Thermally optimized package | LDPAK(S)-(1) delivers 1.25 °C/W channel-to-case impedance-2× better than DPAK-enabling higher power density without forced air. |
| Body diode performance | 150 ns trr and 0.88 V VDF support efficient synchronous rectification and reduce reverse recovery losses in bridge legs. |
Applications
| Industrial DC-DC Converters | Brushless DC Motor Drives |
|---|---|
Use Scenario: 48 V input, 12 V/30 A isolated forward converter in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 250 kHz with zero-voltage switching assist. Use Value: 0.036 Ω RDS(on) cuts conduction loss to <0.7 W, allowing natural convection cooling and extending MTBF beyond 100,000 hours. | Use Scenario: Three-phase inverter stage driving 1 kW BLDC motor in HVAC compressor control. IC Role / Device Role / Timing Role: High-side power switch in 60 kHz PWM-driven half-bridge leg, handling peak currents up to 135 A pulse. Use Value: Dual-drain LDPAK package and 1.25 °C/W θch–c sustain 45 A continuous current without derating at 75 °C ambient. |
| Telecom Rectifier Modules | UPS Inverter Stages |
Use Scenario: Secondary-side synchronous rectifier in 3 kW telecom rectifier with 54 V output and 96% efficiency target. IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge topology, conducting 45 A RMS with 150 ns body diode recovery. Use Value: 150 ns trr and low Qrr minimize shoot-through risk and EMI generation during dead-time transitions. | Use Scenario: Output H-bridge in online double-conversion UPS delivering 230 VAC from 400 VDC bus. IC Role / Device Role / Timing Role: Hard-switched 200 V bridge arm switch handling 30 A RMS and 135 A peak surge currents. Use Value: Avalanche rating (9.6 mJ) absorbs line-reactive energy during grid fault conditions without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH20N20X3 | 200 V, 20 A, RDS(on) = 0.085 Ω, TO-247 package, higher θjc = 0.65 °C/W but lower current rating. | Lower current capability limits use to ≤15 A continuous loads; larger footprint increases layout inductance. | Select when legacy TO-247 mounting is required and thermal mass outweighs package size constraints. |
| STP20NM20 | 200 V, 20 A, RDS(on) = 0.08 Ω, TO-220 package, no avalanche rating, slower trr = 220 ns. | Lacks avalanche ruggedness and has higher conduction loss; unsuitable for inductive hard-switching or high-reliability industrial use. | Acceptable only for cost-sensitive, low-duty-cycle applications where transient robustness is not critical. |
Compared with IXFH20N20X3 and STP20NM20, RJK2017DPE-00#J3 offers 2.25× higher continuous current, 58% lower RDS(on), and integrated avalanche protection-enabling smaller heatsinks, higher power density, and elimination of external clamps in motor and SMPS designs.
Availability
RJK2017DPE-00#J3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and UPS inverter stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.
Supply support for RJK2017DPE-00#J3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK2017DPE-00#J3 belongs to Renesas' high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where thermal performance, avalanche safety, and fast switching are critical.
FAQ
What is the maximum continuous drain current rating for RJK2017DPE-00#J3?
RJK2017DPE-00#J3 is rated for 45 A continuous drain current (ID) at case temperature Tc = 25 °C. Derating applies above this temperature per the SOA curve; at Tc = 100 °C, the usable ID drops to approximately 28 A. This rating assumes proper PCB copper area and heatsinking to maintain θch–c ≤ 1.25 °C/W as specified in the RJK2017DPE-00#J3 datasheet.
Does RJK2017DPE-00#J3 support logic-level gate drive?
RJK2017DPE-00#J3 is not a logic-level MOSFET; its gate threshold (VGS(off)) ranges from 2 V to 4 V, and it achieves full enhancement (RDS(on) = 0.036 Ω typ.) only at VGS = 10 V. Driving RJK2017DPE-00#J3 with 5 V logic alone results in significantly higher on-resistance (>0.1 Ω) and excessive heating. A dedicated gate driver capable of 10–15 V output is required for optimal RJK2017DPE-00#J3 performance.
What is the purpose of the dual-drain configuration in RJK2017DPE-00#J3's LDPAK(S)-(1) package?
The dual-drain configuration (Pins 2 and 4) in RJK2017DPE-00#J3's LDPAK(S)-(1) package provides parallel current paths to reduce effective package inductance and improve current sharing in high-di/dt applications. This layout lowers switching voltage overshoot, improves EMI behavior, and enhances thermal spreading across the exposed drain pad-directly contributing to the 1.25 °C/W θch–c specification of the RJK2017DPE-00#J3.
Is RJK2017DPE-00#J3 suitable for avalanche-prone circuits like relay drivers or solenoid controls?
Yes, RJK2017DPE-00#J3 is explicitly rated for unclamped inductive switching with 12 A single-pulse avalanche current (IAP) and 9.6 mJ avalanche energy (EAR). This makes RJK2017DPE-00#J3 appropriate for relay/solenoid drivers where stored inductive energy must be safely absorbed without external snubbers-provided pulse conditions meet the datasheet's STch = 25 °C and Tch ≤ 150 °C limits.
How does the body diode performance of RJK2017DPE-00#J3 compare to standard MOSFETs in synchronous rectification?
RJK2017DPE-00#J3 features a fast, low-loss body diode with trr = 150 ns and VDF = 0.88 V (typ. at IF = 45 A), outperforming many general-purpose 200 V MOSFETs (trr > 200 ns, VDF > 1.1 V). This enables cleaner commutation in synchronous rectifiers, reduces reverse recovery losses by ~35%, and lowers EMI generation-key advantages confirmed in RJK2017DPE-00#J3 application testing for LLC and phase-shifted full-bridge topologies.
RJK2017DPE-00#J3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK2017DPE-00#J3 FAQ
1.How can I place an order for RJK2017DPE-00#J3 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK2017DPE-00#J3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK2017DPE-00#J3 reliable?
The price and inventory of RJK2017DPE-00#J3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK2017DPE-00#J3 is usually 5 days.
3.What payment methods are accepted for RJK2017DPE-00#J3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK2017DPE-00#J3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK2017DPE-00#J3?
RJK2017DPE-00#J3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK2017DPE-00#J3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK2017DPE-00#J3?
For technical support, including RJK2017DPE-00#J3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK2017DPE-00#J3 requirements.
6.How does Aetrix verify that RJK2017DPE-00#J3 is sourced from the original manufacturer or authorized distributors?
All RJK2017DPE-00#J3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK2017DPE-00#J3 meets industry standards.
7.What is the process for return or replacement of RJK2017DPE-00#J3?
All RJK2017DPE-00#J3 units undergo pre-shipment inspection (PSI). If there is an issue with RJK2017DPE-00#J3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK2017DPE-00#J3 part is unused and in its original packaging.
Return procedure for RJK2017DPE-00#J3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RJK2017DPE-00#J3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
