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Renesas RJK2017DPE-WS#J3
- Part No.:
- RJK2017DPE-WS#J3
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK2017DPE-WS#J3.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:680
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Product details
Overview
RJK2017DPE-WS#J3 from Renesas is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drives, featuring RDS(on) = 0.036 Ω (typ.), VDSS = 200 V, ID = 45 A, and td(off) = 95 ns at Ta = 25 °C.
For engineers reviewing the RJK2017DPE-WS#J3 datasheet, RJK2017DPE-WS#J3 pinout, RJK2017DPE-WS#J3 application, or RJK2017DPE-WS#J3 equivalent, key selection criteria include low conduction loss, fast turn-off capability, integrated body diode recovery performance, and thermal robustness in high-current industrial power stages.
Technical Context
This MOSFET employs a trench-gate process optimized for reduced gate charge (Qg = 66 nC) and minimized output capacitance (Coss = 290 pF), enabling efficient hard-switching operation up to 200 kHz in synchronous buck topologies. Its LDPAK(S)-(1) package provides low θch-c = 1.25 °C/W for high-power density designs.
The device integrates a body-drain diode with VDF = 0.88 V (typ.) and trr = 150 ns under IF = 45 A and diF/dt = 100 A/μs, supporting freewheeling in half-bridge configurations without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - supports 170 V DC bus systems with 15% margin for voltage transients |
| RDS(on) | 0.036 Ω (typ.) - enables ≤1.8 W conduction loss at 45 A continuous drain current |
| ID | 45 A - rated for sustained current in TO-263-equivalent thermal envelope |
| td(off) | 95 ns - limits switching energy loss during turn-off in high-frequency PWM control |
| Qg | 66 nC - determines gate driver peak current requirement (~6.6 A for 10 ns rise time) |
| Coss | 290 pF - contributes to voltage-dependent turn-on delay and snubber design in resonant circuits |
| trr | 150 ns - defines minimum dead-time setting to prevent shoot-through in bridge legs |
Pinout & Package
Package: LDPAK(S)-(1) (RENESAS code PRSS0004AE-B), surface-mount, thermally enhanced leadframe with exposed drain pad; dimensions 10.2 mm × 8.6 mm × 1.37 mm; mass 1.30 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level drive; VGS(off) = 2–4 V ensures reliable enhancement-mode cutoff |
| 2 (Drain) | High-side power node | Internally connected to exposed metal pad; primary heat path to PCB copper |
| 3 (Source) | Power return reference | Serves as local ground reference for gate driver; ties to source of synchronous FET in buck converter |
| 4 (Drain) | Redundant drain connection | Parallel drain terminal to reduce bond-wire inductance and improve current sharing uniformity |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 10 V drive | 0.036 Ω typ. reduces conduction losses in 48 V industrial power supplies |
| Fast switching with low Qg | 66 nC total gate charge enables <100 ns transition times with standard 1-A drivers |
| Optimized body diode recovery | 150 ns trr allows safe operation in non-isolated DC-DC converters without external Schottky |
| Thermally efficient package | θch-c = 1.25 °C/W supports 100 W channel dissipation with minimal heatsinking |
Applications
| Motor Drive Inverter | Industrial DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller driving 500 W fans or pumps. IC Role / Device Role / Timing Role: High-side switching element with synchronized gate timing and body-diode freewheeling. Use Value: Low RDS(on) and fast td(off) minimize I²R and switching losses, extending battery runtime by >3% versus comparable 200 V MOSFETs. | Use Scenario: Primary-side switch in isolated 48 V to 12 V flyback converter for factory automation I/O modules. IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with ZVS-assisted turn-on. Use Value: Low Coss and controlled Qgd/Qgs ratio support soft-switching transitions, reducing EMI generation by 8 dBµV. |
| Solar Charge Controller | UPS Output Stage |
Use Scenario: Buck-stage switch in MPPT solar charge controller handling 30 A continuous input from 60 V PV arrays. IC Role / Device Role / Timing Role: Unidirectional power switch with body diode conducting reverse current during duty-cycle gaps. Use Value: Confirmed 150 ns trr prevents cross-conduction in synchronous rectification mode, improving conversion efficiency by 1.2% at full load. | Use Scenario: Output H-bridge switch in online UPS delivering clean 230 V AC from 360 V DC bus. IC Role / Device Role / Timing Role: Low-side switching device in complementary pair with matched timing characteristics. Use Value: Matched tr/tf (40 ns each) and tight RDS(on) distribution (±12%) ensure balanced current sharing and thermal stress across parallel devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH24N20L | RDS(on) = 0.045 Ω (higher), Qg = 52 nC (lower), TO-247 package | Requires larger heatsink due to higher conduction loss; better suited for lower-frequency (<50 kHz) linear-regulated outputs | Select when layout allows TO-247 footprint and priority is gate drive simplicity over thermal density |
| STP20NM20 | VDSS = 200 V, RDS(on) = 0.055 Ω, D2PAK package, no trr spec provided | Lacks published body diode recovery data; unsuitable for synchronous rectification or high-di/dt freewheeling | Acceptable only in non-synchronous topologies where external diode handles reverse current |
Compared with IXTH24N20L and STP20NM20, the RJK2017DPE-WS#J3 delivers superior thermal performance per unit area, tighter switching timing control, and verified body-diode recovery-making it preferred for compact, high-efficiency 100 kHz+ industrial power stages requiring minimal external components.
Availability
RJK2017DPE-WS#J3 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and solar charge controllers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for RJK2017DPE-WS#J3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The RJK2017DPE-WS#J3 belongs to Renesas' high-voltage power MOSFET product line engineered for high-efficiency, high-reliability switching in industrial power conversion systems operating up to 200 V DC bus.
FAQ
What is the maximum continuous drain current rating for RJK2017DPE-WS#J3?
The RJK2017DPE-WS#J3 has a continuous drain current rating of 45 A at Tc = 25 °C. This rating assumes proper PCB copper area for thermal conduction and is derated linearly above 25 °C case temperature per the specified θch-c = 1.25 °C/W. At Tc = 100 °C, the usable ID drops to approximately 28 A.
Does RJK2017DPE-WS#J3 support 4.5 V gate drive?
No-RJK2017DPE-WS#J3 is not characterized for guaranteed operation at 4.5 V gate drive. Its VGS(off) range is 2–4 V, and RDS(on) = 0.036 Ω is specified only at VGS = 10 V. At 4.5 V, RDS(on) increases significantly (≥0.08 Ω), increasing conduction loss beyond typical design margins. Use 10 V drive for full-rated performance.
What is the purpose of the dual drain terminals (pins 2 and 4) on RJK2017DPE-WS#J3?
The dual drain terminals on RJK2017DPE-WS#J3 serve to reduce parasitic inductance and improve current distribution across the internal die connections. Pin 2 and Pin 4 are electrically common and both connect directly to the exposed drain pad. This configuration lowers high-frequency switching loop inductance and enhances thermal spreading in the LDPAK(S)-(1) package, contributing to stable operation in fast-switching applications.
Is RJK2017DPE-WS#J3 suitable for avalanche-rated operation?
Yes-the RJK2017DPE-WS#J3 is rated for repetitive avalanche energy of 9.6 mJ (EAR) and avalanche current of 12 A (IAP) under specified test conditions (Tch ≤ 150 °C). These ratings apply to single-pulse, unclamped inductive switching events and must be validated in the final circuit using appropriate snubbing and layout practices before deployment in avalanche-tolerant designs.
What is the body-diode forward voltage of RJK2017DPE-WS#J3 at rated current?
The body-diode forward voltage (VDF) of RJK2017DPE-WS#J3 is 0.88 V (typ.) at IF = 45 A and VGS = 0 V, measured at Ta = 25 °C. This value reflects low forward conduction loss during freewheeling phases, supporting high-efficiency operation in synchronous rectifier and half-bridge topologies without external diodes.
RJK2017DPE-WS#J3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK2017DPE-WS#J3 FAQ
1.How can I place an order for RJK2017DPE-WS#J3 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK2017DPE-WS#J3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK2017DPE-WS#J3 reliable?
The price and inventory of RJK2017DPE-WS#J3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK2017DPE-WS#J3 is usually 5 days.
3.What payment methods are accepted for RJK2017DPE-WS#J3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK2017DPE-WS#J3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK2017DPE-WS#J3?
RJK2017DPE-WS#J3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK2017DPE-WS#J3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK2017DPE-WS#J3?
For technical support, including RJK2017DPE-WS#J3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK2017DPE-WS#J3 requirements.
6.How does Aetrix verify that RJK2017DPE-WS#J3 is sourced from the original manufacturer or authorized distributors?
All RJK2017DPE-WS#J3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK2017DPE-WS#J3 meets industry standards.
7.What is the process for return or replacement of RJK2017DPE-WS#J3?
All RJK2017DPE-WS#J3 units undergo pre-shipment inspection (PSI). If there is an issue with RJK2017DPE-WS#J3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK2017DPE-WS#J3 part is unused and in its original packaging.
Return procedure for RJK2017DPE-WS#J3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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