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Renesas RJK2017DPP-90#T2
- Part No.:
- RJK2017DPP-90#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
RJK2017DPP-90#T2.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,367
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Product details
Overview
RJK2017DPP-90#T2 from Renesas is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and industrial power supplies. It features 200 V VDSS, 45 A continuous drain current (ID), 0.036 Ω typical RDS(on) at VGS = 10 V, and TO-220FN package with isolated heatsink tab.
For engineers reviewing the RJK2017DPP-90#T2 datasheet, RJK2017DPP-90#T2 pinout, RJK2017DPP-90#T2 application, or RJK2017DPP-90#T2 equivalent, key selection criteria include avalanche energy rating (9.6 mJ), fast switching times (td(on) = 50 ns, tf = 40 ns), body diode reverse recovery time (150 ns), and thermal resistance (θch-c = 4.17 °C/W).
Technical Context
This MOSFET employs planar V-groove silicon technology optimized for low conduction loss and controlled switching transients. Its gate charge profile (Qg = 66 nC, Qgd = 16 nC) supports efficient hard-switching operation up to several hundred kHz in synchronous buck and half-bridge topologies.
The integrated body diode exhibits low forward voltage (VDF = 0.88 V typ. at 45 A) and fast reverse recovery (trr = 150 ns), enabling reduced commutation loss in freewheeling paths without external Schottky supplementation in moderate-frequency applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - Maximum blocking voltage before avalanche onset; defines usable input voltage range in 100–180 VAC rectified or 48 V bus systems. |
| RDS(on) (typ) | 0.036 Ω @ VGS = 10 V - Enables <1.8 W conduction loss at 45 A, supporting compact thermal design in high-current switch nodes. |
| ID (cont) | 45 A - Continuous drain current rating at Tc = 25°C; derates per θch-c = 4.17 °C/W for real-world heatsink-limited operation. |
| td(off) | 95 ns - Turn-off delay time under standard test conditions; critical for minimizing overlap loss in synchronous rectification. |
| EAR | 9.6 mJ - Single-pulse avalanche energy rating; supports robustness against inductive load switching transients without snubber circuits. |
| Ciss | 4800 pF - Input capacitance at VDS = 25 V; determines gate drive strength requirement and impacts switching speed vs. EMI trade-off. |
| trr | 150 ns - Body diode reverse recovery time; limits minimum dead-time setting and influences shoot-through risk in bridge configurations. |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), featuring insulated metal tab for direct heatsink mounting without isolation hardware. Thermal path optimized via low θch-c = 4.17 °C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; threshold VGS(off) = 2–4 V ensures reliable turn-on with standard PWM controllers. |
| 2 (Drain) | High-side power terminal | Connected to input bus or inductive load node; rated for 200 V and 135 A pulsed current. |
| 3 (Source) | Power return reference | Serves as common return for gate drive and load current; ties to PCB ground plane with low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.036 Ω typ. reduces I²R losses by >30% versus comparable 200 V MOSFETs, lowering thermal stress in space-constrained power stages. |
| Fast switching | Combined td(on) + tr + td(off) + tf < 225 ns enables >500 kHz operation while maintaining <5% switching loss share at 45 A. |
| Robust avalanche capability | 9.6 mJ single-pulse rating allows safe operation under unclamped inductive switching without external clamping components. |
| Optimized body diode | 150 ns trr and 0.88 V VDF reduce freewheeling loss and EMI generation compared to standard MOSFETs in non-synchronous topologies. |
| Isolated TO-220FN package | Metal tab electrically isolated from drain; eliminates need for insulating pads or washers when mounted to grounded heatsinks. |
Applications
| Motor Drive Inverter | Industrial DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 3-phase BLDC motor controller operating from 48–72 V DC bus. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 45 A peak phase current with <100 ns dead-time control. Use Value: Low RDS(on) and fast tf/tr minimize conduction and switching losses, extending battery runtime and reducing heatsink size. | Use Scenario: Primary-side switch in 1 kW isolated forward converter with 200 V input range. IC Role / Device Role / Timing Role: Main power switch subjected to repetitive unclamped inductive energy during reset cycles. Use Value: 9.6 mJ avalanche rating ensures reliable operation without snubbers, simplifying magnetics design and improving efficiency. |
| UPS Power Stage | Welding Equipment Output Stage |
Use Scenario: Bidirectional DC link switch in online UPS with 170–200 VDC bus derived from rectified AC. IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch managing bidirectional 45 A current flow. Use Value: Low leakage (IDSS ≤ 1 μA) prevents standby power waste; fast trr minimizes cross-conduction risk during polarity reversal. | Use Scenario: Output chopper in IGBT-gated arc welding inverter delivering pulsed 45 A output at 1–5 kHz. IC Role / Device Role / Timing Role: High-current, high-dV/dt switch controlling weld current waveform shape and duty cycle. Use Value: 135 A pulsed ID rating and 4.17 °C/W θch-c support short-duration high-current bursts without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V VDSS, 20 A ID, RDS(on) = 0.06 Ω, no avalanche rating specified | Lower current capacity and missing avalanche spec limit use in inductive switching or overload-prone systems | Select only for lower-power (<1 kW), non-avalanche-critical applications where cost is primary driver |
| IXTH30N20P | 200 V VDSS, 30 A ID, RDS(on) = 0.055 Ω, EAR = 12 mJ, TO-247 package | Larger TO-247 footprint requires PCB redesign; higher avalanche margin but lower current density | Prefer when higher avalanche safety margin is required and board space permits larger package |
Compared with STP20NM20 and IXTH30N20P, RJK2017DPP-90#T2 delivers optimal balance of 45 A current handling, 0.036 Ω RDS(on), and verified 9.6 mJ avalanche performance in the compact, heatsink-ready TO-220FN form factor-making it uniquely suited for high-density, high-reliability industrial power modules.
Availability
RJK2017DPP-90#T2 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.
Supply support for RJK2017DPP-90#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise systems.
The RJK2017DPP-90#T2 belongs to Renesas' high-voltage power MOSFET product line, engineered specifically for ruggedized industrial switching applications demanding high current density, fast transient response, and repeatable avalanche survivability.
FAQ
What is the maximum continuous drain current rating for RJK2017DPP-90#T2?
The RJK2017DPP-90#T2 has a maximum continuous drain current (ID) rating of 45 A at case temperature Tc = 25°C. This rating assumes proper heatsinking with θch-c = 4.17 °C/W. Derating is required above 25°C case temperature per the thermal curve in the official Renesas datasheet REJ03G1797-0200.
Does RJK2017DPP-90#T2 support logic-level gate drive?
RJK2017DPP-90#T2 is not a logic-level MOSFET. Its gate threshold voltage (VGS(off)) ranges from 2 V to 4 V, but full enhancement requires VGS = 10 V to achieve the specified RDS(on) of 0.036 Ω. Driving RJK2017DPP-90#T2 with only 3.3 V or 5 V gate voltage results in significantly higher on-resistance and unacceptable conduction loss.
What is the significance of the "-90#T2" suffix in RJK2017DPP-90#T2?
The "-90#T2" suffix in RJK2017DPP-90#T2 indicates a tape-and-reel packaging variant (T2) with a specific reel size and orientation, consistent with Renesas' ordering nomenclature. The "90" denotes internal process or test binning code tied to electrical parameter screening-confirmed by Renesas documentation REJ03G1797-0200 as part of the qualified production release for this MOSFET.
Can RJK2017DPP-90#T2 be used in avalanche mode repeatedly?
RJK2017DPP-90#T2 is rated for single-pulse avalanche energy (EAR) of 9.6 mJ at Tch ≤ 150°C. While it can survive occasional unclamped inductive switching events, Renesas does not specify or guarantee repetitive avalanche operation. For designs requiring frequent avalanche stress, additional protection circuitry or alternative devices with explicit repetitive avalanche ratings should be evaluated.
Is the TO-220FN package of RJK2017DPP-90#T2 electrically isolated?
Yes-the TO-220FN package used for RJK2017DPP-90#T2 features an electrically isolated metal tab. As confirmed in the Renesas package drawing and absolute maximum ratings table, the tab is insulated from the drain terminal, allowing direct mounting to a grounded heatsink without thermal interface pads or insulators-reducing thermal resistance and assembly complexity.
RJK2017DPP-90#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJK2017DPP-90#T2 FAQ
1.How can I place an order for RJK2017DPP-90#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK2017DPP-90#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK2017DPP-90#T2 reliable?
The price and inventory of RJK2017DPP-90#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK2017DPP-90#T2 is usually 5 days.
3.What payment methods are accepted for RJK2017DPP-90#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK2017DPP-90#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK2017DPP-90#T2?
RJK2017DPP-90#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK2017DPP-90#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK2017DPP-90#T2?
For technical support, including RJK2017DPP-90#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK2017DPP-90#T2 requirements.
6.How does Aetrix verify that RJK2017DPP-90#T2 is sourced from the original manufacturer or authorized distributors?
All RJK2017DPP-90#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK2017DPP-90#T2 meets industry standards.
7.What is the process for return or replacement of RJK2017DPP-90#T2?
All RJK2017DPP-90#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK2017DPP-90#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK2017DPP-90#T2 part is unused and in its original packaging.
Return procedure for RJK2017DPP-90#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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